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    Untitled

    Abstract: No abstract text available
    Text: NTD50N03R Power MOSFET 25 V, 45 A, Single N−Channel, DPAK Features • • • • • Planar Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Pb−Free Packages are Available


    Original     		PDF NTD50N03R NTD50N03R/D

    t50 N03rG

    Abstract: N03RG t50n03 t50n03rg NTD50N03RG 369D NTD50N03R NTD50N03RT4 NTD50N03RT4G
    Text: NTD50N03R Power MOSFET 25 V, 45 A, Single N−Channel, DPAK Features • • • • • Planar Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Pb−Free Packages are Available


    Original     		PDF NTD50N03R NTD50N03R/D t50 N03rG N03RG t50n03 t50n03rg NTD50N03RG 369D NTD50N03R NTD50N03RT4 NTD50N03RT4G

    t50n03rg

    Abstract: t50 N03rG N03RG T50N03R 369D NTD50N03R NTD50N03RG NTD50N03RT4 NTD50N03RT4G t50n03
    Text: NTD50N03R Power MOSFET 25 V, 45 A, Single N−Channel, DPAK Features • • • • • Planar Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Pb−Free Packages are Available


    Original     		PDF NTD50N03R NTD50N03R/D t50n03rg t50 N03rG N03RG T50N03R 369D NTD50N03R NTD50N03RG NTD50N03RT4 NTD50N03RT4G t50n03

    t50n03rg

    Abstract: t50 N03rG T50N03R t50n03 N03RG
    Text: NTD50N03R Power MOSFET 25 V, 45 A, Single N−Channel, DPAK Features • • • • • Planar Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Pb−Free Packages are Available


    Original     		PDF NTD50N03R NTD50N03R/D t50n03rg t50 N03rG T50N03R t50n03 N03RG