RT89
Abstract: 4G87 DDB6U75N16W1R
Text: Technische Information / technical information DDB6U75N16W1R IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values !" #$ % # ' ' 45 & # $ ! %4 64 4 $ 5 ; ' 4 64 4! %
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DDB6U75N16W1R
RT89
4G87
DDB6U75N16W1R
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k3532
Abstract: lm 3244
Text: Technische Information / technical information IGBT-Module IGBT-modules DDB6U75N16W1R Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values 32C5 36!"#$ 6%1&3 1322 14' *6+6,-.
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DDB6U75N16W1R
D36134
623D32
2C46523
612C6A
1231423567896AB
4112CD3567896EF
k3532
lm 3244
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transistor 6c x
Abstract: HC325FF484 diode AG14 AH15 E20 L27 AA34 H1152 diode x9 FF484
Text: Pin Information for HardCopy III HC325FF484 Version 1.0 Bank Number VREF Group 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A VREFB1AN0 VREFB1AN0 VREFB1AN0 VREFB1AN0 VREFB1AN0
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HC325FF484
PT-HC325FF484-1
transistor 6c x
HC325FF484
diode AG14
AH15
E20 L27
AA34
H1152
diode x9
FF484
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transistor 6c x
Abstract: f15u12 WF484 diode t25 4 G9 AC27 AA34 H1152 diode AG14 ah5 diode diode b14 8b
Text: Pin Information for HardCopy III HC325WF484 Version 1.0 Bank Number VREF Group 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A VREFB1AN0 VREFB1AN0 VREFB1AN0 VREFB1AN0
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HC325WF484
PT-HC325WF484-1
transistor 6c x
f15u12
WF484
diode t25 4 G9
AC27
AA34
H1152
diode AG14
ah5 diode
diode b14 8b
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T4 4c diode
Abstract: PI5C34X2483N PI5C34X483N Diode 3D4
Text: PRELIMINARY PI5C34X483/PI5C34X2483 25ohm 40-Bit, 4-Port Bus Exchange Switch PI5C34X483 PI5C34X2483(25ohm)
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PI5C34X483/PI5C34X2483
25ohm)
40-Bit,
PI5C34X483
PI5C34X2483
25ohm
PI5C34X2483)
PI5C34X483
T4 4c diode
PI5C34X2483N
PI5C34X483N
Diode 3D4
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transistor 6c x
Abstract: HC4E25WF484 diode t25 4 g8
Text: Pin Information for HardCopy IV HC4E25WF484 Version 1.0 Bank Number VREF Group 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C VREFB1AN0 VREFB1AN0 VREFB1AN0 VREFB1AN0
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HC4E25WF484
PT-HC4E25WF484-1
transistor 6c x
HC4E25WF484
diode t25 4 g8
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transistor 6c x
Abstract: diode t25 4 F7 w17 diode g4 5c DIODE H5 c2 diode F4 3c W2V6
Text: Pin Information for HardCopy IV HC4E25FF484 Version 1.0 Bank Number VREF Group 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C VREFB1AN0 VREFB1AN0 VREFB1AN0 VREFB1AN0
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HC4E25FF484
PT-HC4E25FF484-1
transistor 6c x
diode t25 4 F7
w17 diode
g4 5c
DIODE H5 c2
diode F4 3c
W2V6
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Untitled
Abstract: No abstract text available
Text: STGIPS14K60 SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter - 14 A, 600 V short-circuit rugged IGBT Datasheet − production data Features • IPM 14 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes
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STGIPS14K60
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SDIP-25L
Abstract: TN0107
Text: STGIPS14K60 IGBT intelligent power module IPM 14 A, 600 V, DBC isolated, SDIP-25L molded Features • 14 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■ 3.3 V, 5 V, 15 V CMOS/TTL inputs comparators with hysteresis and pull down /
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STGIPS14K60
SDIP-25L
SDIP-25L
TN0107
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Untitled
Abstract: No abstract text available
Text: STGIPS14K60 SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter - 14 A, 600 V short-circuit rugged IGBT Features • IPM 14 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■ Short-circuit rugged IGBTs
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STGIPS14K60
SDIP-25L
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EP3SE50
Abstract: CQ10L
Text: Pin Information for the Stratix III EP3SE50 Device Version 1.0 Bank Number 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C VREF VREF1A
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EP3SE50
PT-EP3SE50-1
EP3E50
CQ10L
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6c x
Abstract: No abstract text available
Text: Pin Information for the Stratix III EP3SL50 Device Version 1.0 Bank Number 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C VREF VREF1A VREF1A VREF1A
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EP3SL50
PT-EP3SL50-1
6c x
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SDIP-25L
Abstract: TN0107 circuit diagram for igbt
Text: STGIPS14K60 SLLIMM small low-loss intelligent molded module Features • IPM 14 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■ Short-circuit rugged IGBTs ■ VCE sat negative temperature coefficient
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STGIPS14K60
SDIP-25L
SDIP-25L
TN0107
circuit diagram for igbt
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EP3SL70
Abstract: No abstract text available
Text: Pin Information for the Stratix III EP3SL70 Device Version 1.0 Bank Number 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C VREF VREF1A VREF1A VREF1A
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EP3SL70
PT-EP3SL70-1
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HC325FF780
Abstract: PT-HC325FF780-1 transistor 6c x FF780 AA34 H1152 HC325Ff78 AE-15
Text: Pin Information for HardCopy III HC325FF780 Version 1.0 Bank Number VREF Group 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A VREFB1AN0 VREFB1AN0 VREFB1AN0 VREFB1AN0
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HC325FF780
PT-HC325FF780-1
HC325FF780
transistor 6c x
FF780
AA34
H1152
HC325Ff78
AE-15
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CQ15B
Abstract: ag33 diode ak23 diode AA34 AB29 ag12 battery DIODE AJ22 Diode AG10 CQ11B PMA 30 D15
Text: Pin Information for the Stratix IV GX EP4SGX110 Device Version 1.3 Bank Number 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C
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EP4SGX110
PT-EP4SGX110-1
F1152
CQ15B
ag33 diode
ak23 diode
AA34
AB29
ag12 battery
DIODE AJ22
Diode AG10
CQ11B
PMA 30 D15
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HC4GX25LF780
Abstract: 7c 2v AE23 AF23 diode t25 4 k8 diode F4 3c
Text: Pin Information for HardCopy IV HC4GX25LF780 Version 1.0 Bank Number VREF Group 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C VREFB1CN0 VREFB1CN0 VREFB1CN0 VREFB1CN0 VREFB1CN0 VREFB1CN0 VREFB1CN0 VREFB1CN0 VREFB1CN0 VREFB1CN0 VREFB1CN0 VREFB1CN0 VREFB1CN0 VREFB1CN0
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HC4GX25LF780
PT-HC4GX25LF780-1
HC4GX25LF780
7c 2v
AE23
AF23
diode t25 4 k8
diode F4 3c
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CQ25B
Abstract: EP4SGX180 ag33 diode DQS20B AJ11 AB29 AB30 AC25 diode t25 4 H9 DQ5B
Text: Pin Information for the Stratix IV GX EP4SGX180 Device Version 1.1 Bank Number 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1C 1C 1C 1C 1C 1C
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EP4SGX180
PT-EP4SGX180-1
CQ25B
ag33 diode
DQS20B
AJ11
AB29
AB30
AC25
diode t25 4 H9
DQ5B
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ag33 diode
Abstract: AJ11 AB29 AB30 AC25 AP-19 DQ20b
Text: Pin Information for the Stratix IV GX EP4SGX230 Device Version 1.3 Bank Number 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1C 1C 1C 1C 1C 1C
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EP4SGX230
PT-EP4SGX230-1
ag33 diode
AJ11
AB29
AB30
AC25
AP-19
DQ20b
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diode F4 6A
Abstract: transistor 6c x AA34 DQS25R
Text: Pin Information for the Stratix III EP3SE80 Device Version 1.1 Bank Number 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C
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EP3SE80
PT-EP3SE80-1
EP3E80
diode F4 6A
transistor 6c x
AA34
DQS25R
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transistor 6c x
Abstract: AC25
Text: Pin Information for HardCopy IV HC4E25WF780 Version 1.0 Bank Number VREF Group 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C VREFB1AN0 VREFB1AN0 VREFB1AN0
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HC4E25WF780
PT-HC4E25WF780-1
transistor 6c x
AC25
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AA34
Abstract: EP3SE110
Text: Pin Information for the Stratix III EP3SE110 Device Version 1.1 Bank Number 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C 1C
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EP3SE110
PT-EP3SE110-1
EP3E110
AA34
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my 50
Abstract: PS2031 KY transistor NEC ps2031 12010C LC-1175 LC117
Text: NEC ELECTRONICS INC 30E D • T ~ Ì 83 i^STSSS QOETbSS T ■ PHOTO COUPLER O / _ P S 2031 PHOTO CO U PLER High Collector to Emitter Voltage Single Transistor DESCRIPTIO N The PS2031 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon photo transistor.
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bi427Sa5
PS2031
PS2031
4S6-3111
J22686
my 50
KY transistor
NEC ps2031
12010C
LC-1175
LC117
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sot-23 MARKING CODE ZA
Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Text: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same
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OT-23,
OT-89
OT-143
BZV49
OT-23
2SC2059K
sot-23 MARKING CODE ZA
b0808
BCB47B
BCB17-16
marking za sot89
2SB0151K
marking k5 sot89
SOT 86 MARKING E4
n33 SOT-23
10Y sot-23
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