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    T30 TRANSISTOR Search Results

    T30 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    T30 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ultrasonic sensor diffuse mode sensor T30UUPB • compact housing style ■ cable, 2m ■ Operating voltage 15…24 VDC ■ ■ pnp transistor output and analogue output for voltage measuring range adjustable via teach-in Wiring diagram T30UUPB 3055992 Design


    Original     		PDF T30UUPB 24VDC D-45472 SMB30A SMB1815SF SMB30FAM10 2013-07-13T09

    Untitled

    Abstract: No abstract text available
    Text: ultrasonic sensor diffuse mode sensor T30UIPB • compact housing style ■ cable, 2m ■ Operating voltage 15…24 VDC ■ ■ pnp transistor output and analogue output for current measuring range adjustable via teach-in Wiring diagram T30UIPB 3055980 Design


    Original     		PDF T30UIPB D-45472 SMB30A SMB1815SF SMB30FAM10 2013-07-13T09

    Untitled

    Abstract: No abstract text available
    Text: ultrasonic sensor diffuse mode sensor T30UIPA • compact housing style ■ cable, 2m ■ Operating voltage 15…24 VDC ■ ■ pnp transistor output and analogue output for current measuring range adjustable via teach-in Wiring diagram T30UIPA 3055974 Design


    Original     		PDF T30UIPA D-45472 SMB30A SMB1815SF SMB30FAM10 2013-07-13T09

    Untitled

    Abstract: No abstract text available
    Text: ultrasonic sensor diffuse mode sensor T30UUPA • compact housing style ■ cable, 2m ■ Operating voltage 15…24 VDC ■ ■ pnp transistor output and analogue output for voltage measuring range adjustable via teach-in Wiring diagram T30UUPA 3055986 Design


    Original     		PDF T30UUPA D-45472 SMB30A SMB1815SF SMB30FAM10 2013-07-13T09

    Untitled

    Abstract: No abstract text available
    Text: ultrasonic sensor diffuse mode sensor T30UDPA • compact housing style ■ cable, 2m ■ Operating voltage 12…24 VDC ■ two pnp transistor outputs ■ two independent switching ranges adjustable via button or control line Wiring diagram T30UDPA 3055544


    Original     		PDF T30UDPA D-45472 SMB30A SMB1815SF SMB30FAM10 2013-07-13T09

    IC103

    Abstract: MT38A araa FMMT38A FMMT38B FMMT38C CJKL
    Text: m SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON ISSUE 2- JANUARY TRANSISTORS 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp PARTMARKING DETAILS - ABSOLUTE MAXIMUM FMMT38A - 4J FMMT38B - 5J FM MT38C - 7.J RATINGS. PARAMETER Collector-Base Voltage


    Original     		PDF MT38C FMMT38A FMMT38B 10perating -55to IC103 MT38A araa FMMT38A FMMT38B FMMT38C CJKL

    Untitled

    Abstract: No abstract text available
    Text: ultrasonic sensor diffuse mode sensor T30UDPB • compact housing style ■ cable, 2m ■ Operating voltage 12…24 VDC ■ two pnp transistor outputs ■ two independent switching ranges adjustable via button or control line Wiring diagram T30UDPB 3055550


    Original     		PDF T30UDPB D-45472 SMB30A SMB1815SF SMB30FAM10 2013-07-13T09

    Untitled

    Abstract: No abstract text available
    Text: ultrasonic sensor diffuse mode sensor T30UIPAQ • compact housing style ■ connection via M12 x 1 connector ■ Operating voltage 15…24 VDC ■ ■ pnp transistor output and analogue output for current measuring range adjustable via teach-in Wiring diagram


    Original     		PDF T30UIPAQ 2013-07-13T09 D-45472

    Untitled

    Abstract: No abstract text available
    Text: ultrasonic sensor diffuse mode sensor T30UIPBQ • compact housing style ■ connection via M12 x 1 connector ■ Operating voltage 15…24 VDC ■ ■ pnp transistor output and analogue output for current measuring range adjustable via teach-in Wiring diagram


    Original     		PDF T30UIPBQ 2013-07-13T09 D-45472

    Untitled

    Abstract: No abstract text available
    Text: ultrasonic sensor diffuse mode sensor T30UDPBQ • compact housing style ■ connection via M12 x 1 connector ■ Operating voltage 12…24 VDC ■ two pnp transistor outputs ■ two independent switching ranges adjustable via button or control line Wiring diagram


    Original     		PDF T30UDPBQ 2013-07-13T09 D-45472

    Untitled

    Abstract: No abstract text available
    Text: ultrasonic sensor diffuse mode sensor T30UUPAQ • compact housing style ■ connection via M12 x 1 connector ■ Operating voltage 15…24 VDC ■ ■ pnp transistor output and analogue output for voltage measuring range adjustable via teach-in Wiring diagram


    Original     		PDF T30UUPAQ 24VDC 2013-07-13T09 D-45472

    Untitled

    Abstract: No abstract text available
    Text: ultrasonic sensor diffuse mode sensor T30UUPBQ • compact housing style ■ connection via M12 x 1 connector ■ Operating voltage 15…24 VDC ■ ■ pnp transistor output and analogue output for voltage measuring range adjustable via teach-in Wiring diagram


    Original     		PDF T30UUPBQ 2013-07-13T09 D-45472

    Untitled

    Abstract: No abstract text available
    Text: ultrasonic sensor diffuse mode sensor T30UDPAQ • compact housing style ■ connection via M12 x 1 connector ■ Operating voltage 12…24 VDC ■ two pnp transistor outputs ■ two independent switching ranges adjustable via button or control line Wiring diagram


    Original     		PDF T30UDPAQ 2013-07-13T09 D-45472

    2N2955

    Abstract: 2n2955 to3 t30k transistor 2N2955 2n2955 pnp power transistor 2n2955 "PNP Transistor" 2n2955 2N2955-T30-K 2N2955L-T30-K 2n2955 Power Transistor PNP
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N2955 PNP SILICON TRANSISTOR SILICON PNP TRANSISTORS DESCRIPTION The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.


    Original     		PDF 2N2955 2N2955 2N2955L 2N2955-T30-K 2N2955L-T30-K QW-R205-004 2n2955 to3 t30k transistor 2N2955 2n2955 pnp power transistor 2n2955 "PNP Transistor" 2n2955 2N2955-T30-K 2N2955L-T30-K 2n2955 Power Transistor PNP

    Untitled

    Abstract: No abstract text available
    Text: ISOCOM CONPONENTS .V LTD 7SC D MflflbSlO QGODDfltj T30 ISO 6 N 1 3 5 , 6 N 1 3 6 HIGH SPEED OPTO ISOLATORS ISOCOM, INC. 274 E. HAMILTON AVE. SUITE F CAMPBELL, CA. 95008 A B S O L U T E M A XIM U M R ATINGS 25°C unless otherw ise noted _


    OCR Scan     		PDF 10OOW/is 4flabS10

    T-301-34

    Abstract: No abstract text available
    Text: Afa Avionics Pulsed Power Transistor PH 1090-150S Preliminary 150 Watts, 1030-1090 MHz, 10 us Pulse, 1% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration


    OCR Scan     		PDF 1090-150S 5b4220S T-301-34

    Untitled

    Abstract: No abstract text available
    Text: KSR2209 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=4.7KQ) • Complement to KSR 1 209 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


    OCR Scan     		PDF KSR2209 DD2SD13 71b4142

    27mhz rf ic

    Abstract: 2SC1944 T30 transistor 27mhz transistor 27mhz rf amplifier T-30
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor Dimension in mm designed for RF power amplifiers on HF bandmobile radio applications. FEATURES • High power gain : Gpe S 11 dB, @ Vcc = 12V, f = 27MHz,


    OCR Scan     		PDF 2SC1944 2SC1944 27MHz, T0-220 27MHz 27mhz rf ic T30 transistor 27mhz transistor 27mhz rf amplifier T-30

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR DG17S24 7S1 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF bandmobile radio applications. Dimension in mm 9.1 ± 0 . 7


    OCR Scan     		PDF DG17S24 2SC1944 2SC1944 27MHz, 27MHz

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One W att Amplifier Transistors MPS6714 MPS6715 NPN Silicon MAXIMUM RATINGS Rating Symbol C ollector-Em itter Voltage Value Unit Vdc VCEO 30 40 MPS6714 MPS6715 C ollector-B ase Voltage Vdc VCBO 40 50 MPS6714 MPS6715 vebo


    OCR Scan     		PDF MPS6714 MPS6715 MPS6715 b3ti72SS DCH3373

    ecg68

    Abstract: uhf microwave fet ECG81 50 Amp 100 volt fet Amp. 100 watt fet Si-Power ECG58 ECG59 ECG60 ECG60MP
    Text: Transistors cont'd ECG Type (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Description and Application Collector To Emitter Volts BVce O Base to Emitter Volts b v Ebo Max. Collector Current Iç Amps Freq. In MHz »t


    OCR Scan     		PDF ECG58 ECG59) TB-35 T44-1 ECG59 ECG58) ECG60 ECG60MP* ecg68 uhf microwave fet ECG81 50 Amp 100 volt fet Amp. 100 watt fet Si-Power ECG60MP

    ECG58

    Abstract: ecg59 ecg84 uhf microwave fet ECG79 ECG388 ECG60 ECG60MP ECG61 ECG61MP
    Text: Transistors cont'd ECG Type (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Description and Application bv Collector To Emitter Volts Base to Emitter Volts BVc e o BVEBo Cbo Max. Collector Current 1C A m p s Max. Device Diss. P q


    OCR Scan     		PDF ECG58 ECG59) TB-35 T44-1 ECG59 ECG58) ECG60 ECG60MP* ecg84 uhf microwave fet ECG79 ECG388 ECG60MP ECG61 ECG61MP

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme, ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from


    OCR Scan     		PDF 200mA Q62702-C2481 OT-343 E35b05 012Gflb3 BCR400 flE35bQ5 012Dflb4 EHA07219

    2sc2166

    Abstract: 2SC2166 equivalent
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2166 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2166 is a silicon NPN epitaxial planar type transistor designed Dimensions i for RF power amplifiers in HF band mobile radio applications. 9.1 ± 0 .7 FEATURES


    OCR Scan     		PDF 2SC2166 2SC2166 2SC2166 equivalent