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    T2D 9 Search Results

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    T2D 9 Price and Stock

    Microchip Technology Inc MCP73831T-2DCI/OT

    Battery Management Charge mgnt contr
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MCP73831T-2DCI/OT 18,837
    • 1 $0.65
    • 10 $0.641
    • 100 $0.613
    • 1000 $0.613
    • 10000 $0.597
    		Buy Now

    Microchip Technology Inc MCP73832T-2DFI/OT

    Battery Management 4.2V Li-Ion/Li-Poly Chrg mgnt controller
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MCP73832T-2DFI/OT 12,080
    • 1 $0.67
    • 10 $0.665
    • 100 $0.613
    • 1000 $0.613
    • 10000 $0.597
    		Buy Now

    Microchip Technology Inc MCP73831T-2DCI/MC

    Battery Management Charge mgnt contr
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MCP73831T-2DCI/MC 9,361
    • 1 $0.71
    • 10 $0.699
    • 100 $0.65
    • 1000 $0.65
    • 10000 $0.641
    		Buy Now

    Microchip Technology Inc MCP73832-2DCI/MC

    Battery Management Li-Ion/Li-Poly Charg Mgnt 4.2V Vreg out
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MCP73832-2DCI/MC 9,200
    • 1 $0.71
    • 10 $0.698
    • 100 $0.65
    • 1000 $0.65
    • 10000 $0.65
    		Buy Now

    Texas Instruments SN65LVDT2DBVTG4

    LVDS Interface IC DUAL LVDS RECEIVER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SN65LVDT2DBVTG4 7,873
    • 1 $2.2
    • 10 $1.98
    • 100 $1.66
    • 1000 $1.03
    • 10000 $0.979
    		Buy Now
    Find more T2D 9 price and stock on Findchips.com

    T2D 9 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    66-219/T2D-AR2S2B5Y/3C

    Abstract: t2d diode diode T2D t2d 76 66-219-T2D T2D 95 chips t2d transistor t2d 66-219 66-219/T2D-CS1T1B5Y/3C
    Text: Technical Data Sheet White Chip LED With Right Angle Lens 66-219/T2D-AR2S2B5Y/3C Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow solder process. ․Mono-color type.


    Original     		PDF 66-219/T2D-AR2S2B5Y/3C DSE-0000555 17-Dec-2008 66-219/T2D-AR2S2B5Y/3C t2d diode diode T2D t2d 76 66-219-T2D T2D 95 chips t2d transistor t2d 66-219 66-219/T2D-CS1T1B5Y/3C

    T2D 90

    Abstract: T2D 80 "T2D" T2D 30
    Text: 3.3V CMOS Oscillator Low Power OC1T Specifications Product OC1T Option Codes Terminations: SM, Gold flashed pads SM, Ni+Sn plated pads ࡯ ˿ T1D T2D Frequency: 32.7680kHz ࡯ ±30ppm ±20ppm ±10ppm Other ࡯ ˿ ˿ ˿ Frequency stability: 0 ~ -10ppm 0 to +50°C


    Original     		PDF 7680kHz 30ppm 20ppm 10ppm -10ppm -30ppm -50ppm 012ppm/ 768kHz T2D 90 T2D 80 "T2D" T2D 30

    T2D 44

    Abstract: T2D 80 T2D 23 "T2D" T2D 40 T2D 90 diode a7 transistor a7 A7 diode
    Text: 3.3V SM Oscillator Low Power OC1T Specifications Product OC1T Option Codes Terminations: SM, Gold flashed pads SM, Ni+Sn plated pads ࡯ ˿ T1D T2D Frequency: 32.7680kHz ࡯ ±30ppm ±20ppm ±10ppm Other ࡯ ˿ ˿ ˿ Frequency stability: 0 ~ -10ppm 0 to +50°C


    Original     		PDF 7680kHz 30ppm 20ppm 10ppm -10ppm -30ppm -50ppm 012ppm/ 768kHz T2D 44 T2D 80 T2D 23 "T2D" T2D 40 T2D 90 diode a7 transistor a7 A7 diode

    T2D DIODE

    Abstract: T2D DIODE 02
    Text: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN16T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 5.0±0.2 RFN16 T2D ① Construction Silicon epitaxial planer 1.2


    Original     		PDF AEC-Q101 RFN16T2DFH RFN16 O-220) O220FN R1120A T2D DIODE T2D DIODE 02

    16-219A

    Abstract: t2d 76 transistor t2d
    Text: Technical Data Sheet 0402 Package Chip LED 0.2mm Height 16-219A/T2D-AR2T1QY/3T Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow solder process. ․Mono-color type.


    Original     		PDF 6-219A/T2D-AR2T1QY/3T 6-219A DSE-0001281 15-Dec-2009 16-219A t2d 76 transistor t2d

    t2d shindengen

    Abstract: No abstract text available
    Text: PowerCl amper •外観図 ST02D140F2 OUTLI NE Package：2F t ：mm Uni カソードマーク Cathode mark 煙パワーツェナーダイオードと FRD を複合 煙面実装 煙スナバ回路用途 T2D 14 00 00 ① 特 長 品名略号 Type No. Feat ur


    Original     		PDF

    T2D 03

    Abstract: T2D 21 T2D 07 t2d7 T2D14 t2d6 T2D 9 sh69p26 t2d 01 t2d 04
    Text: SH69P26 OTP 6K 4-Bit Micro-controller Features SH6610D-based single-chip 4-bit micro-controller OTPROM: 6k X 16 bits RAM: 389 X 4 bits - 69 System control register - 320 Data memory Operation voltage: - fOSC = 30kHz - 4MHz, VDD = 2.4V - 5.5V - fOSC = 4MHz - 8MHz, VDD = 4.5V - 5.5V


    Original     		PDF SH69P26 SH6610D-based 30kHz 768kHz, 400kHz T2D 03 T2D 21 T2D 07 t2d7 T2D14 t2d6 T2D 9 sh69p26 t2d 01 t2d 04

    t2d 82

    Abstract: t2d 76 t2d 96
    Text: SH69P55A/K55A OTP/MASK 8K 4-Bit Micro-controller With LCD Driver & 10-bit SAR ADC Features Oscillator Code Option - Crystal Oscillator: 32.768kHz, 400kHz - 8MHz - Ceramic Resonator: 400kHz - 8MHz - External RC Oscillator: 400kHz - 8MHz - Internal RC Oscillator: 4MHz ±5%


    Original     		PDF SH69P55A/K55A 10-bit 768kHz, 400kHz t2d 82 t2d 76 t2d 96

    t2d7

    Abstract: T2D 1D T2D 09 0/diode T2D7
    Text: SH69P55A/K55A OTP/MASK 8K 4-Bit Micro-controller With LCD Driver & 10-bit SAR ADC Features „ Oscillator Code Option - Crystal Oscillator: 32.768kHz, 400kHz - 8MHz - Ceramic Resonator: 400kHz - 8MHz - External RC Oscillator: 400kHz - 8MHz - Internal RC Oscillator: 4MHz ±5%


    Original     		PDF SH69P55A/K55A 10-bit 768kHz, 400kHz t2d7 T2D 1D T2D 09 0/diode T2D7

    10XTV2-CT-T3

    Abstract: 15XTV2-CT-T3 20XTV2-CT-T2 10XTV-CT 5xtv2-ct-t3 20XTV1-CT-T2 15XTV1-CT-T2 20XTV-CT 15XTV-CT 10XTV1-CT-T3
    Text: R XTV High-temperature self-regulating heating cables Electrical freeze protection and processtemperature maintenance for both nonhazardous and hazardous locations. The XTV family of self-regulating heating cables provides solutions for industrial freeze protection and process-temperature


    Original     		PDF 20XTV1-CT-T2 15XTV1-CT-T2 20XTV2-CT-T2 10XTV1-CT-T3 10XTV2-CT-T3 15XTV2-CT-T3 H52711 10XTV2-CT-T3 15XTV2-CT-T3 20XTV2-CT-T2 10XTV-CT 5xtv2-ct-t3 20XTV1-CT-T2 15XTV1-CT-T2 20XTV-CT 15XTV-CT 10XTV1-CT-T3

    T2D 40 DIODE

    Abstract: No abstract text available
    Text: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1)Cathode common Dual type. (TO-220)


    Original     		PDF AEC-Q101 RFN20T2DFH O-220) RFN20 O220FN R1120A T2D 40 DIODE

    Untitled

    Abstract: No abstract text available
    Text: P hilips Sem iconductors DD32512 T2D BB A P X Product specification Hybrid integrated circuit VHF/UHF wideband amplifier OM2070B N AMER PHILIPS/DISCRETE DESCRIPTION b'JE PIN CONFIGURATION A three-stage wideband amplifier In hybrid integrated circuit technology


    OCR Scan     		PDF DD32512 OM2070B MCD445 hbS3T31 DD3ES17

    btw38

    Abstract: BTW38 Series
    Text: PHILIPS INTERNATIONAL 7110öEb DGb2417 T2D « P H I N bSE D BTW38 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended fo r use in power control circuits e.g. light and m otor control and power switching systems. The series consists o f reverse po larity types (anode to stud) identified by a suffix R: BTW38— 600R to


    OCR Scan     		PDF DGb2417 BTW38 BTW38-- 1000R. 38-600R 1000R 711002b 00b2424 BTW38 Series

    T2D 07

    Abstract: UCOP02 t2d 04 T2D 90 T2D 70 T2D 87 continental KN T2D 80 application note unitrode application note U-68 T2D 21
    Text: UNITRODE CORP/UNITRODE, IC =J2]> J> lU N f-rl^ K LINEAR INTEGRATED CIRCUITS [jg g |B ^ General Purpose Operational Amplifier ucop o 2D FEATURES 4 • Excellent DC Specification • Low-Offset Voltage Drift— 8 /xV/°C Max • Low Power Consumption— 90 mW Max


    OCR Scan     		PDF UCOP-02 T2D 07 UCOP02 t2d 04 T2D 90 T2D 70 T2D 87 continental KN T2D 80 application note unitrode application note U-68 T2D 21

    cerdip 300mil

    Abstract: plji 74F30240 74F30244 N74F30240F N74F30240N N74F30244F N74F30244N F3024
    Text: HILIPS i n t e r n a t i o n a l Philips Samiconductors-SigneHcs Document No. 853-1157 ECN No. 97652 Date of issue September 15,1989 Status Product Specification FAST Products FEATURES • Ideal for driving transmission lines or backplanes. 160mA lQL Ideal for applications with imped­


    OCR Scan     		PDF 160mA F30240 F30244 160mA 7110fl2b 00S2747 74F30240. 74F30244 500ns cerdip 300mil plji 74F30240 74F30244 N74F30240F N74F30240N N74F30244F N74F30244N F3024

    Untitled

    Abstract: No abstract text available
    Text: A F 28003 SF2994-<£o'2<S NOTES: 1. MATING: 2. MATERIALS: .2Sd Interface dimensions per Mil-C-39012/ SMA Series and Solitron/Microwave MD107. B O D Y . Stainless Steel per AMS-5640, Type 303, Cond. A. CONTACT.Beryllium Copper per QQ-C-530, Cond H.


    OCR Scan     		PDF SF2994-< Mil-C-39012/ MD107. AMS-5640, QQ-C-530, Mil-P-19468 L-P-403, QQ-P-35A, Mil-G-45204, Mil-C-1455

    Untitled

    Abstract: No abstract text available
    Text: S C 150 C 1 http://w w w .am ericanm icrosem i.coTn/new products/highvoltagescrs/scl50c.htm Am e r i c a n M ic r o s e m ic o n d u c t o r SC150C SC150C F a r g eneral p h ta e contra! Utii* taidi a s sjiw it rnnlm te, tljrht C fjiK ruls a n d w e ld e r s e tc .


    OCR Scan     		PDF products/highvoltagescrs/scl50c SC150C SC150C-40-60 SCT50C-8Q-120l

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUIT TO SH IBA 1. ° 1 (2) (3) (4) (5) TECHNICAL DATA MASK ROM FOR SPEECH SYNTHESIS LSI TC8890N/F GENERAL The TC8890 is dedicated mask ROM for speech synthesis LSI. FEATURES ROM capacity .128Kbits. Easily connectable to TC8802AF, maximum 64 pieces.


    OCR Scan     		PDF TC8890N/F TC8890 128Kbits. TC8802AF, 28pin 28pin OP28pin) SDIP28pin TC8890N-XXXX

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M ld C a a iM I MT2D T 132 B, MT4D232 B, MT8D432 B 2, 4 MEG X 32 BURST EDO DRAM MODULES 1, BURST EDO DRAM MODULE 1,2,4 MEG x 32 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES • 72-pin, single-in-lihe memory module (SIMM) • Burst EDO order, interleave or linear, programmed by


    OCR Scan     		PDF MT4D232 MT8D432 72-pin, 024-cycle 048-cycle P199S.

    T2D 62 diode

    Abstract: T2D 98 DIODE T2D 70 diode T2D 27 diode
    Text: FU JI tì'utìiEirutìUK 2SK2645-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2£2 50W Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Repetitive Avalanche Rated


    OCR Scan     		PDF 2SK2645-01MR O-220F15 T2D 62 diode T2D 98 DIODE T2D 70 diode T2D 27 diode

    Untitled

    Abstract: No abstract text available
    Text: N-Channel JFET Monolithic Dual caiocnc CORPORATION SST5912 DESCRIPTION FEATURES • • • • The SST5912 is a High Speed N-Channel Monolithic JFET pair encapsulated in a surface mount plastic SO-8 package. The device is designed for high gain typically > 6000 jxmhos ,


    OCR Scan     		PDF SST5912 SST5912 300ns,

    T2D 22 diode

    Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
    Text: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA


    OCR Scan     		PDF BDT60 BDT60B BDT61, BDT61A, BDT61B BDT61C. BDT60 T2D 22 diode T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode

    5353482 ic

    Abstract: TC8802 TC8802AF t2d 46
    Text: • cJQtì724'ì 00246^4 T33 « T 0 S 3 b4E J> TOSHIBA UC/UP 1. TC8890N/F-1 GENERAL T he TC8890 is dedicated m ask ROM for speech synthesis LSI. 2. FEATURES 0053234 □ ROM capacity 128Kbits. □ E asily connectable to T C 8802A F , m axim um 64 pieces.


    OCR Scan     		PDF TC8890 TC8890N/F-1 128Kbits. 28pin TC8890N-XXXX P28pin TC8890F-XXXX TC8890N/F-2 5353482 ic TC8802 TC8802AF t2d 46

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TPM1919-40 TECHNICAL DATA FEATURES : • HIGH POWER ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE PidB = 46.0 dBm at 1.9 GHz ■ HIGH GAIN GidB = 13 dB at 1.9 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C


    OCR Scan     		PDF TPM1919-40 0010406F 175SD TPM1919-40Ã TCH7250