13lt 01 g
Abstract: 13lt SUB50P05-13LT
Text: SUB50P05-13LT Vishay Siliconix P-Channel 55-V D-S MOSFET with Sensing Diode PRODUCT SUMMARY V(BR)DSS (V) –55 rDS(on) (W) ID (A) 0.0135 @ VGS = –10 V –50a 0.019 @ VGS = –4.5 V –50a S D2PAK-5L T1 D1 G D2 T2 1 2 3 4 5 D G D T1 P-Channel MOSFET S T2
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SUB50P05-13LT
S-04525--Rev.
20-Aug-01
13lt 01 g
13lt
SUB50P05-13LT
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6R SMD MARKING CODE
Abstract: NXP PESD2CAN
Text: SO T2 3 PESD2CAN CAN bus ESD protection diode Rev. 2 — 27 September 2012 Product data sheet 1. Product profile 1.1 General description PESD2CAN in a small SOT23 Surface-Mounted Device SMD plastic package designed to protect two automotive Controller Area Network (CAN) bus lines from the damage
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AEC-Q101
6R SMD MARKING CODE
NXP PESD2CAN
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Untitled
Abstract: No abstract text available
Text: KSM10N50CF/KSMF10N50CF 500V N-Channel MOSFET Features TO-220F TO-220 • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 16pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode
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KSM10N50CF/KSMF10N50CF
O-220F
O-220
54TYP
00x45Â
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fire alarm with 8085
Abstract: No abstract text available
Text: AQY212GS.fm1 y [ W Q O O Q N U S œ @ ˛ j œ @ ª P Q Q U “ GU General Use Type SOP Series 1-Channel (Form A) High Capacity 4-Pin Type 4.3 .169 4.4 .173 2.1 .083 mm inch 1 4 2 3 cUL VDE pending pending PhotoMOS RELAYS FEATURES TYPICAL APPLICATIONS 1. Greatly increased load current in the
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AQY212GS
fire alarm with 8085
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wiring diagram electric
Abstract: AQS225S AQS225SX AQS225SZ AQS225
Text: PhotoMOS RELAYS RF Radio Frequency Type SOP Series 4-Channel (Form A) 16-pin Type FEATURES 4.4 .173 2.1 .083 10.37 .408 mm inch The capacitance between output terminals is small, typically 4.5pF. This enables for a fast operation speed of 0.1ms(typ.). 5. Low-level off state leakage current
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16-pin
083inch
wiring diagram electric
AQS225S
AQS225SX
AQS225SZ
AQS225
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ac dc distribution boards diagram
Abstract: IC 8085 pin diagram IR LED infrared led AQY221N2S AQY221N2SX AQY221N2SZ
Text: RF Radio Frequency C (by) x R 10 Type FEATURES 4.3±0.2 .169±.008 1. In addition to lower output capacitance between terminals than ever before, the PhotoMOS relay achieves low ON-resistance. Output capacitance(C): 1.0pF (typ.) ON resistance(R): 9.5Ω (typ.)
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Abstract: No abstract text available
Text: FCP16N60N / FCPF16N60NT N-Channel SupreMOS MOSFET 600 V, 16 A, 199 mΩ Features Description • RDS on = 170 mΩ (Typ.) @ VGS = 10 V, ID = 8 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology
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FCP16N60N
FCPF16N60NT
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relay pin out diagram
Abstract: smoke detector system schematic diagrams smoke detector schematic diagrams AQS210PS 5 V DC RELAY 14 pin relay datasheet 5 pin relay data sheet 8 pin ic used in laptop chlorine detector circuit diagram notebook schematic diagram
Text: PhotoMOS RELAYS Multi-function 16pin GU SOP Series AQS210PS GU General Use Type SOP Series Multi-function (DAA) 16 pin Type 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ ᕃ PhotoMOS Relay (for hookswitch, dial
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16pin
AQS210PS
16-Pin
083inch
relay pin out diagram
smoke detector system schematic diagrams
smoke detector schematic diagrams
AQS210PS
5 V DC RELAY
14 pin relay datasheet
5 pin relay data sheet
8 pin ic used in laptop
chlorine detector circuit diagram
notebook schematic diagram
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Untitled
Abstract: No abstract text available
Text: FCP22N60N / FCPF22N60NT N-Channel SupreMOS MOSFET 600 V, 22 A, 165 mΩ Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from
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FCP22N60N
FCPF22N60NT
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U405D
Abstract: STU405D 2525l
Text: S T U405D S amHop Microelectronics C orp. Nov,24 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 40V 16A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -12A R DS (ON) ( m W )
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U405D
O-252-5L
O-252-5L
U405D
STU405D
2525l
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STU407D
Abstract: U407D TU407D
Text: S T U407D S amHop Microelectronics C orp. J uly 27 2006 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W )
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U407D
O-252-4L
O-252-4L
STU407D
U407D
TU407D
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STM8457
Abstract: No abstract text available
Text: S T M8457 S amHop Microelectronics C orp. Oct.16,2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 40V 6A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -5A R DS (ON) ( m W )
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M8457
STM8457
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65525
Abstract: No abstract text available
Text: New Product SiZ702DT Vishay Siliconix N-Channel 30-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 and Channel-2 30 RDS(on) (Ω) ID (A) 0.012 at VGS = 10 V 16a 0.0145 at VGS = 4.5 V 16a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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SiZ702DT
2002/95/EC
18-Jul-08
65525
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c6025
Abstract: No abstract text available
Text: S T M8360A S amHop Microelectronics C orp. Oct.16,2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 35V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -35V -5A R DS (ON) ( m W )
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M8360A
c6025
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stu404d
Abstract: U404D TU404D
Text: S T U404D S amHop Microelectronics C orp. Oct, 03 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -12A R DS (ON) ( m W )
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U404D
O-252-4L
O-252-4L
stu404d
U404D
TU404D
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Untitled
Abstract: No abstract text available
Text: cxr10.fm 2 y [ W Q O O P N X P P œ @ ˛ j œ @ O P P S T “ AQY221❍2S FEATURES 4.4 .173 2.1 .083 4.3 .169 <R type> 4.4 .173 2.1 .083 1. Two option package available. R type offers greatly reduced onresistance. C type offers lower output capacitance. AQY221R2S AQY221N2S
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AQY221R2S
AQY221N2S
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2429
Abstract: No abstract text available
Text: New Product SiZ720DT Vishay Siliconix N-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) (Ω) ID (A) 0.0087 at VGS = 10 V 16a 0.0115 at VGS = 4.5 V 16a 0.0062 at VGS = 10 V 16a 0.008 at VGS = 4.5 V 16a • Halogen-free According to IEC 61249-2-21
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SiZ720DT
2002/95/EC
18-Jul-08
2429
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SiZ704DT-T1-GE3
Abstract: No abstract text available
Text: New Product SiZ704DT Vishay Siliconix N-Channel 30-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) ID (A) 0.024 at VGS = 10 V 12a 0.030 at VGS = 4.5 V 12a 0.0135 at VGS = 10 V 16a 0.017 at VGS = 4.5 V 16a • Halogen-free According to IEC 61249-2-21
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SiZ704DT
2002/95/EC
18-Jul-08
SiZ704DT-T1-GE3
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stu407D
Abstract: STU407DH STU407 407DH STU-407DH 407D U407DH TO-252-4L
Text: S T U407DH S amHop Microelectronics C orp. Apr 20 2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -12A R DS (ON) ( m Ω )
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U407DH
O-252-4L
O-252-4L
stu407D
STU407DH
STU407
407DH
STU-407DH
407D
U407DH
TO-252-4L
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Untitled
Abstract: No abstract text available
Text: S T U404DF S amHop Microelectronics C orp. S ep 25 2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -12A R DS (ON) ( m W )
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U404DF
O-252-4L
O-252-4L
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Untitled
Abstract: No abstract text available
Text: S T U406D S amHop Microelectronics C orp. May 29,2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -12A R DS (ON) ( m W )
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U406D
O-252-4L
O-252-4L
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5A86
Abstract: No abstract text available
Text: S T M8455 S amHop Microelectronics C orp. Aug.16,2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 40V 6A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -5A R DS (ON) ( m W )
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M8455
5A86
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DS0137
Abstract: No abstract text available
Text: & FEATURES • 2 0 -4 0 0 MHz ■ Small 16 Pin DIP ■ Low Cost MODEL NO. DS0137 PIN Diode SP7T ■ Low Current Consumption RF1 3 RF2 1 RF3 16 Ò Ò Ó 15 CONTI CO N T2 CO N T3 RF4 14 RF5 RF6 RF7 12 10 8 Ó Ô CO N T6 CO N T 7 Ó Ò Ò 13 CO N T4 SP7T 5 11
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OCR Scan
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DS0137
/MC88C2S
DS0137
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Untitled
Abstract: No abstract text available
Text: FEATURES . J CEr 2 0 - 4 0 0 MHz • Small 16 Pin DIP MODEL NO. DS0137 ■ Low Cost PIN Diode SP7T ■ Low Current Consumption SP7T RF1 3 RF2 RF3 16 RF4 14 RF5 1 CO N TI CO N T2 CO N T3 CO N T4 CONT 5 RF6 12 10 CO N T6 CO N T7 6 GND RF COM .X X .X X X = .02
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DS0137
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