T1P42C
Abstract: bd534j T1P102
Text: TO-220 PIN CO N FIG U R ATIO N 1. B A S E 2. C O L L E C T O R 3. EM ITTER 4. C O L L E C T O R c ,01 0 -I MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 DIM E A B C D E F G H J K L M N 3 G - 1,15 3,75 2,29 2,54 12,70
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O-220
O-220
TIP125
TIP126
TIP127
TIP135
TIP136
T1P42C
bd534j
T1P102
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T1P42C
Abstract: No abstract text available
Text: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN
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O-220
O-220
O-237-2
00014QÃ
T1P42C
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t1p117
Abstract: T1P110 T1P111 T1P112 MJE3310 t1p115 MJE3311 MJE3300 D41K2 2N6548
Text: 1989963 CENTRAL SEMICONDUCTOR ; CENTRAL tï SEMICONDUCTOR 6 i r noi 94 T-/n_?q D Ë J n f i tn t 3 DGaaim b T i T -.-5 3 - 3 / T \3 3 - £ 3 POWER DARLINGTON TRANSISTORS EPOXY le = O P E R A T I N G A N D S T O R A G E T E M P E R A T U R E - 6 5 ° t o +150°C
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2N6548
2N6549
D40K1
D41K1
D40K2
D41K2
D40K3
D41K3
D40K4
D41K4
t1p117
T1P110
T1P111
T1P112
MJE3310
t1p115
MJE3311
MJE3300
2N6548
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T1P110
Abstract: transistor tip 107 T1P111 T1P105 darlington npn tip 102 np112 VCS-60V T1P115 L08M darlington tip 102
Text: ¡ S A M S UN G S E M I C ON D U CT OR INC 14E D 1 7^1,4142 000772a fl PNP EPriAXIAT. SILICON DARLINGTON TRANSISTOR TIP105/106/107 r HIGH DC CURRENT GAIN ‘ MIN hFE=1000 @ V c e = —4 V, lc = -3 A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER
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TIP105/106/107
000772a
TIP100/101/102
TIP105
TIP106
TIP107
T1P105
TIP115:
T1P110
transistor tip 107
T1P111
T1P105
darlington npn tip 102
np112
VCS-60V
T1P115
L08M
darlington tip 102
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TIP118
Abstract: T1P110 MOTOROLA TIP115 transistor TIP 32 transistor t1p115 c 111 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium -Power Com plem entary Silicon TVansistors . . . designed or general-purpose amplifier and low-speed switching applications. High DC Current Gain — hFE = 2500 (Typ @ lc • 1.0 Adc • Collector-Emitter Sustaining Voltage — @ 3 0 mAdc
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TIP110,
TIP115
TIP111,
TIP116
TIP112,
TIP117
T0-220AB
JE224
TIP118
T1P110
MOTOROLA TIP115 transistor
TIP 32 transistor
t1p115
c 111 transistor
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t1p115
Abstract: TIP112 TIP116 TIP117
Text: PANASONIC INDL/ELEK -CIO bTBSöSE D01D441 t, 1SE D Darlington Silicon PNP Power Transistors TO-220 Package _ T - 3 3 '3 1 A b s o lu te M a x im u m R a tin g s T a -2 5 ° C Rem Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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O-220
D01D4M1
T-33-3
T1P115
TiPt10tTIP1t1,
TIP112
-02mA
t1p115
TIP112
TIP116
TIP117
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Untitled
Abstract: No abstract text available
Text: 1989963 CENTRAL CENTRAL 6i r S E M IC O N D U C TO R ; t ï SEMICONDUCTOR noi 94 T-/n_?q D Ë J n f i tn t 3 D G a a im b T POWER DARLINGTON TRANSISTORS EPOXY le = OPERATING AND STO RAGE TEM PE R A T U R E -6 5 °to +150°C 2 .0 A VCE(S) @ 1C fT Min (Typ)
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2N6548
2N6549
D40K1
D41K1
D40K2
D41K2
To-126
C1000SE3
O-105
O-106
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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bbS3131
BLU52
1N321
BYW56
1N321A
BLV97
1N322
TXD10K40
TXD10K60
BT1690
BT808
1N5004
TXD10H60
mp8706
TXC10K40
BSTC1026
BT13G
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