nesg2101m05-t1-a
Abstract: NESG2101M05-A
Text: A Business Partner of Renesas Electronics Corporation. NESG2101M05 Data Sheet NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • • • •
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NESG2101M05
R09DS0036EJ0300
NESG2101M05
PU10190EJ02V0DS
nesg2101m05-t1-a
NESG2101M05-A
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transistor T1J
Abstract: NESG2101M05-T1 NESG2101M05
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M05
PU10190EJ02V0DS
transistor T1J
NESG2101M05-T1
NESG2101M05
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE Philips Semiconductors_ b'lE ]> bbS3^31 DDBbS^b STT » A P X _ Preliminary specification Very fast soft-recovery rectifier diodes DESCRIPTION Glass passivated rectifier diodes in hermetically sealed SOD81 glass
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BYD43-20
S0D81.
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Untitled
Abstract: No abstract text available
Text: Wi5ePjwer FPC/FFC connector Right Angle / ZIF / Upper Contact 1.Omm SMT/Low Profile 1.2mm H I BL117-DDRU Features Electrical Spec Low Profile body high 1.2mm Easy and fast to assembly Temperature -20’C to + 8 5 'C Current: 0.4Amp Max. Voltage : 50VAC Max.
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BL117-DDRU
50VAC
500VAC
100MQ
BL117-
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s 2 umi 1A 250V
Abstract: umi 150 5A 250V umi 5A 250V 2SC2979 1J1ST
Text: Æ&m o s p e c HIGH-VOLTAGE HIGH-SPEED POWER TRANSISTORS . designed for use in high-voltage,high-speed,power switching in inductive circuit,motor control,solenoid and relay drivers. FEATURES: * Collector-Emitter Sustaining VoltageV C E O s u s = 800 V (Min)
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2SC2979
s 2 umi 1A 250V
umi 150 5A 250V
umi 5A 250V
2SC2979
1J1ST
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S20S100
Abstract: S20S70 S20S80 S20S90
Text: Sk MOSPEC S20S70 Thru S20S100 SWITCHMODE POWER RECTIFIERS d 2 pak SCHOTTKY BARRIER RECTIFIERS surface mount pow er package The D2 PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features:
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S20S70
S20S100
O-22Q
S20S90
S20S100
S20S80
S20S90
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CSA10
Abstract: CD4069UBE M30800MC TCD-99-6C09
Text: Technical Data of Ceramic Resonator Type CSA10.0MTZ CST10.0MTW Applied to M30800MC HP-mode TOYAMA MURATA MANUFACTURING CO., LTD. Product Engineering Service Section I Planning Department Piezoelectric Components Group Approved by Checked by Checked by S.Iwasaki
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M30800MC
TCD-99-6C09
CSA10
M30B00MC
CD4069UBE
CD4069UBE
TCD-99-6C09
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NSCM
Abstract: No abstract text available
Text: vu m LF Un m O lû It g m m - NO. © s& NAME K -z ? - 7 " CTRADE MARK) C5ECT3 *£ ! 1. 2. * * ) * « » 3. 3.5 14.6 1 C TABLE 1 5 l^- /0\k B : 179939-u : 17791 4 - C i , 17791 5-C 4. Sit A «.*» i 108-5410 W * * (MATERIAL) A (HEADER HOUSING) « 2 4 » A*
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Mfct94v-0J
179939-u
179939-u
100AY
NSCM
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transistor T1J
Abstract: T1J marking
Text: Philips Semiconductors Product specification NPN switching transistor PMST2369 FEATURES PINNING • Low current max. 200 mA PIN • Low voltage (max. 15 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • High-speed switching applications, primarily in portable
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OT323
PMST2369
PMST2369
OT323)
transistor T1J
T1J marking
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D44R4
Abstract: D44R2 D40N5 D44R8 D40N1 D40N2 D40N3 D40N4 D40P1 D40P3
Text: SILICON POWER TRANSISTORS NPN HIGH VOLTAGE GE Type Pt rc = 25°C M ax. W D40N1 D40N2 D40N3 D40N4 6.25 6 .2 5 6.25 6 .2 5 v CEO M in. (V) 6.25 120 D40P3 6 .2 5 180 D42R2 D 42R 3 D42R4 15 225 250 300 15 15 250 15 60 300 D40P1 D42R I 30 300 375 6 .2 5 60 250
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500mA
D40N1
D40N2
D40N3
D40N4
D40N5
D40P1
D40P3
D40P5
D42RI
D44R4
D44R2
D44R8
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MSM534020B
Abstract: No abstract text available
Text: O K I Semiconductor MSM534020B 262,144-Word x 16-Bit Mask ROM DESCRIPTION lue? ^ ^ 020B iS 3 hlgh_SPeed silicon 8ate CMOS Mask ROM with 262,144-word x 16-bit capacity. The MSM534020B operates on a single 5.0 V power supply and is TTL compatible. The chip's asynchro
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MSM534020B
144-Word
16-Bit
MSM534020B
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TEA-1035
Abstract: TEA1035
Text: DATA SHEET NEC 1 COMPOUND FIELD EFFECT POWER TRANSISTOR PA1576 N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION T he itzPA1576 is N-channel P ow er M O S FET A rray that built in 4 circuits designed for solenoid, m otor and lamp driver. FEATURES • 4 V driving is possible
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PA1576
itzPA1576
PA1576H
IEI-1209)
TEI-1202
MEI-1202
IEI-1207
TEA-1034
TEA-1035
TEA-1035
TEA1035
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c4153
Abstract: 132 triacs
Text: Preliminary specification Philips Semiconductors Triacs BT132 series D logic GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase
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BT132
BT132Repetitive
c4153
132 triacs
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BDX33c equivalent
Abstract: P6019 BDX33D equivalent X33B BDX33 69-6R
Text: BDX33, BDX33A, BDX33B, BDX33C, BDX33D HARRIS SEMICOND SECTOR SbE D File Number • 4 3 0 2 8 7 1 O D M O b l l S34 « H A S 10-Ampere N-P-N Darlington Power Transistors 7 ^ 3 3 TERMINAL DESIGNATIONS 45-60-80-100-120 Volts, 70 Watts Gain of 750 at 4 A B DX33, BDX33A
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BDX33,
BDX33A,
BDX33B,
BDX33C,
BDX33D
10-Ampere
BDX33A)
BDX33D)
BDX33c equivalent
P6019
BDX33D equivalent
X33B
BDX33
69-6R
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D44R4
Abstract: D44R2 D44R8 D44R1 D44R3 D44R7 D44R D44R5 D44R6
Text: Silicon Power Pac Transistors HIGH VOLTAGE The General Electric D44R is a red, silicone encapsulated, power transistor designed for various specific and general purpose applications such as: 120 V.A.C. line operated amplifiers; series, shunt and switching regulators; low thru high frequency inverters/
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T0-220
D44R4
D44R2
D44R8
D44R1
D44R3
D44R7
D44R
D44R5
D44R6
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C175
Abstract: No abstract text available
Text: PART NUMBER UNCONTROLLED DOCUMENT 1.00 [0.033] MAX. REV. LCD-H6X2M70TF-1 REV. A B C 101.60 [4.000] 96.60 [3.803] V.A. 92.60 [3.646] I.A. 76 E.C.N. E.C.N. E.C.N. E.C.N. NUMBER AND REVISION COMMENTS # 1099 8 . # 1101 5 . # 1114 8 . • l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l
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LCD-H6X2M70TF-1
03NFCENTIAL
D65EMNATHN
C175
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5V RELAY 8pin
Abstract: KAQW414S 12V RELAY 1 C/O cosmo 010 AGT relay
Text: PRODUCT SPECIFICATION DATE:05/15/2003 NO. 62M21002 PHOTO 'MOS RELAYS: cosm o ELECTRONICS CORPORATION KAQW414S REV. 1 SHEET 1 OF 7 OUTSIDE DIMENSION Unit:mm Tolerance:! 0. 2 mm Operate/Reverse time DUAL 1 FORM B NORMALLY CLOSED Input Output • - 10« “ X
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KAQW414S
62M21002
W414S
5V RELAY 8pin
KAQW414S
12V RELAY 1 C/O
cosmo 010
AGT relay
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marking code p07 sot89
Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
Text: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING
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2PA1576Q
2PA1576R
2PA1576S
2PA17
2PA1774R
2PA1774S
2PB709AQ
2PB709AR
2PB709AS
2PB710AQ
marking code p07 sot89
marking code 3Fp
P1M marking code sot 223
PDTC* MARKING CODE
p04 sot223
FtZ MARKING CODE
T07 marking
P2F SOT23
marking t04 sot23
marking code P1F
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doc-70
Abstract: c431a
Text: O K I Semiconductor MSM27C431AZB 524,288-Word x 8-Bit Low-Voltage One Time PROM D E S C R IP T IO N The MSM27C431AZB is a 4 Mb electrically Programmable Read-Only Memory organized as 524 288 t h e S M 27C43 1 A ^ SM27C^31AZB °P erates on a single 3.3 V power supply and is TTL compatible. Since
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MSM27C431AZB
288-Word
MSM27C431AZB
7Cf31
MSM27-
C431AZB
32-pin
MSM27C421ZB)
doc-70
c431a
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AMP 7-338069-6
Abstract: iec 286 EH0I-0970-03
Text: TH I 5 DRAWING I S UNPUBLI SHED. Dl ST LOC C COPYRIGHT - by Tyco EEtecHrrctnics Nederland EB.V- REV I S IONS ALL RIGHTS RESERVED. DESCRIPTION LTR ECN EH0I-0970-03 EH01-0232-04 D APVD DATE 27-08-03 EL 16 FEB 04 EL 1ATAPE FOR VACUUM PICK AND PLACING NOTES:
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EH0I-0970-03
EH01-0232-04
EIA-481
470-i
02apr
AMP 7-338069-6
iec 286
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Untitled
Abstract: No abstract text available
Text: MIC2920A/29201 29202 29204 400m A Low-Dropout Voltage Regulator General Description Features High output voltage accuracy Guaranteed 400mA output Low quiescent current Low dropout voltage Extremely tight load and line regulation Very low temperature coefficient
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MIC2920A/29201
400mA
IC29202/MIC29204)
T0-220,
O-220-5,
O-263-5,
OT-223,
MIC2920A
370mV
O-263-5
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Untitled
Abstract: No abstract text available
Text: 74ALVCH162244 16-bit buffer/line driver with 30Q termination resistor 3-State Product specification 1998 Jun 29 IC24 Data Handbook Philips Semiconductors PHILIPS Philips Semiconductors Product specification 16-bit buffer/line driver with 30ft termination resistor
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74ALVCH162244
16-bit
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JTs smd diode
Abstract: TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE smd transistor marking p3 12A p transistor smd 12A transistor smd SMD TRANSISTOR 12a smd transistor marking 1j transistor smd sG SMD TRANSISTOR MARKING P2 STTA1206D/DI/G
Text: rz7 SGS-THOMSON ^ 7 # M O œ iL E O T M Û S S T T A 1206G TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 12A V rrm 600V trr (typ) 28ns Vf (max) 1.5V FEATURES AND BENEFITS • SPECIFIC TO ’’FREEWHEEL MODE” OPERA
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1206G
JTs smd diode
TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE
smd transistor marking p3
12A p transistor smd
12A transistor smd
SMD TRANSISTOR 12a
smd transistor marking 1j
transistor smd sG
SMD TRANSISTOR MARKING P2
STTA1206D/DI/G
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circuit diagram of FTA receiver
Abstract: DS8833 DS8833J 5H41
Text: NATL SEtllCO ND -CNEflORY} I DE D | b S O lia b □ D b 5 b 3 ci Ö | O V '«I 09 W CO •'«. CO -si T-52-31 National Semiconductor 00 DS7833/DS8833/DS7835/DS8835 Quad TRI-STATE Bus Transceivers W 01 o in 00 00 W CJ General Description Features This family of TRI-STATE bus transceivers offers extreme
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DS7833/DS8833/DS7835/DS8835
T-52-31
U/F/5608-3
TL/F/5808-6
TL/F/5808-8
circuit diagram of FTA receiver
DS8833
DS8833J
5H41
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