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    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7984-14L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-|dB = 42.0 dBm at 7.9 GHz to 8.4 GHz


    OCR Scan     		PDF TIM7984-14L 2-16G1B) MW51150196 QGS27Qb M7984-141Power T0R75SG 0G227DÃ