T092
Abstract: ZVP21
Text: P-CHANNEL ENHANCEMENT ZVP21IOA MODE VERTICAL DMOS FET ISSUE 2- 1 MARCH 94 ‘DS on =8U * I ❑ FEATURES * 100 volt vD~ o G s E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Drain-Source Voltage Continuous Pulsed Drain C;rrent ‘DS at Tamb=25°C
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ZVP21IOA
VDs-80
VGY-10V
1601WYC
ZVP21
KEEi311
-102V,
T092
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ZVN2106A
Abstract: T092 j-40-20 T 3361 D
Text: N-CHANNEL ENHANCEMENT ZVN2106A MODE VERTICAL DMOS FET ISSUE 2- MARCH 94 ❑ FEATURES * 60 Volt VD~ *R J 1 DS on =2Q ID G s E-Line T092 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Drain-Source V&age .——— ‘DS ID 450 .———. Gate Source Voltage . . .——
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ZVN2106A
50LKW
ZVN2106A
T092
j-40-20
T 3361 D
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS250P ISSUE 2 - S E P T 93_ FEATURES * 45 Volt V,DS R DS on = U £ i REFER TO ZVP2106A FOR GRAPHS E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage
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BS250P
ZVP2106A
001G35S
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2N6715
Abstract: No abstract text available
Text: 2N6714 2N6715 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH FE A T U R E S * * * 40 Volt V CE0 Gain of 50 at lc= 1 Am p P,0,= 1W att E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER
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2N6714
2N6715
2N6715
100mA*
100mA
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX656 ZTX657 ISSUE 2 - JULY 94 FEATURES * 300 Volt VCE0 * 0.5 Amp continuous current * P torlW att P s f E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage
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ZTX656
ZTX657
0Q1Q354
001G35S
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zvp2106a
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS250P ISSUE 2 -S E P T 93 FEATU RES * 45 Volt V,DS * R DS on =14i2 R EFER TO ZVP2106A FOR G R A P H S E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL Drain-Source Voltage VALUE UNIT VDS -45
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BS250P
ZVP2106A
-100jtA,
-200mA
-200mA
r-25V,
-500mA
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tl431 stm
Abstract: TL431 Z TL431 t092
Text: TL431 PROGRAMMABLE VOLTAGE REFERENCE • ADJUSTABLE OUTPUT VOLTAGE: 2.5 to 36V ■ SINK CURRENT CAPABILITY :1 to 100mA ■ TYPICAL OUTPUT IMPEDANCE : 0.22Q ■ 1% AND 2% VOLTAGE PRECISION Z T092 Plastic Package N DIP8 (Plastic Package) DESCRIPTION D S 08
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TL431
100mA
TL431
TheTL431
100mA
TL431C/AC
tl431 stm
TL431 Z
TL431 t092
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LTSG
Abstract: No abstract text available
Text: SUPPLY VOLTAGE MONITOR ZSM561 ISSUE 2 - NOVEMBER 1995_ DEVICE DESCRIPTION The device is available in a T092 package for through hole applications as well as S 0 8 and SOT223 for surface mount requirements. The ZSM561 is a three terminal under voltage
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ZSM561
OT223
ZSM561
ZTX690B
LTSG
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ZTX601
Abstract: l05a T092 ZTX600 ZTX601 B E C
Text: ZTX600 ZTX601 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 2 -JU N E 94 FEA T U R E S * 160 Volt V CE0 * * 1 Amp continuous current Gain of 5K at lc =1 Am p * Ptot= 1 W att E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Collector-Base Voltage
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ZTX600
ZTX601
ZTX600
ZTX601
300jis.
l05a
T092
ZTX601 B E C
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Untitled
Abstract: No abstract text available
Text: 2N6716 2N6717 2N6718 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94_ FE A T U R E S * 100 Volt V,CEO Gain of 20 at lc = 0.5 A m p P ,o t= 1 Watt E E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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2N6716
2N6717
2N6718
250mA,
250mA
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2N6724
Abstract: No abstract text available
Text: 2N6724 2N6725 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 1 - MARCH FE A T U R E S * 50 Volt V CE0 * Gain of 15k at lc = 0.5 A m p * Ptot=1 W att E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS.
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2N6724
2N6725
2N6725
200mA,
500mA,
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IN4568
Abstract: sl1040 Zener IN4568 LM335 LM134 LM135 LM135-LM235-LM335 LM235 LM235-LM335 LM335A
Text: r z j S G S -1H M S l m i 35 N RiilD êlS ilLI(gïï^®R5D(gS LM235-LM335.A PRECISION TEMPERATURE SENSORS . . . . DIRECTLY CALIBRATED IN °K 1°C INITIAL ACCURACY OPERATES FROM 450nA TO 5mA LESS THAN 1Q DYNAMIC IMPEDANCE z T092 (Plastic Package D S08 (Plastic Micropackage
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LM135
LM235-LM335
LM135,
LM235,
LM335
10mV/Â
IN4568
sl1040
Zener IN4568
LM134
LM135-LM235-LM335
LM235
LM335A
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LW336
Abstract: b37 zener ohmmeter diagram ZENER B37 lm317 t092 1N4148 LM236 1N4148 thomson LM334 LM336
Text: [ Z T S G S -1 H 0 M S 0 N *71» M [3©im ST[M [K]Q©l LM236,A LM336,B 2.5V VOLTAGE REFERENCES . LOWTEMPERATURE COEFFICIENT . WIDE OPERATING CURRENT OF 400|iA TO 10mA . 0.2D DYNAMIC IMPEDANCE • GUARANTEED TEMPERATURE STABILITY . FAST TURN-ON z T092 (Plastic Package
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LM236
LM336
LM236and
LM336are
-25cC,
LW336
b37 zener
ohmmeter diagram
ZENER B37
lm317 t092
1N4148
1N4148 thomson
LM334
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR 2N6732 IS S U E 1 - M ARC H 94_ FEATURES * * 80 Volt V CE0 Gain of 100 at lc = 350 m A * Pto,=1W att E-Line T092 Compatible ABSOLUTE M A XIM U M RATINGS. PARAMETER SY M B O L Collector-Base Voltage
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2N6732
-350mA,
-35mA*
-200mA,
20MHz
-10mA,
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CI 7223
Abstract: No abstract text available
Text: r z j SGS-THOMSON * 7 £ . KäOffl I[LIOT S iD(@i LM134-LM234 LM334 THREE TERMINAL ADJUSTABLE CURRENT SOURCES . . . • OPERATES from 1V to 40V 0.02% V CURRENT REGULATION PROGRAMMABLE from 1|iA to 10mA ±3% INITIAL ACCURACY z T092 (Plastic Package) DESCRIPTION
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LM134-LM234
LM334
LM134
LM234
LM134Z
GGbfl075
LM134/LM234/LM334
CI 7223
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX450 ZTX451 ISSUE 2 -MARCH 1994_ FEATURES * 60 V o lt V CE0 * 1 A m p c o n tin u o u s c u rre n t * Ptot= 1 W a t t E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage
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ZTX450
ZTX451
cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ZTX510 ISSUE 2 - MARCH 94 FEATURES * 12 Volt V CE0 * P fT=400M H z s f E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. SYM BO L PARAM ETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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ZTX510
amtp25Â
-10nA
0Q1Q354
001G35S
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1766M
Abstract: SOB and PUT thermo couple
Text: SGSTHOMSON LM135 LM235 - LM335/A R{ilD g[^ [i[Ul(gî^(S KilD©i PRECISION TEMPERATURE SENSORS DIRECTLY CALIBRATED IN °K 1°C INITIAL ACCURACY OPERATES FROM 400uA TO 5mA LESS THAN 1Î2 DYNAMIC IMPEDANCE / z T092 (Plastic Package D SOB (Plastic Micropackage)
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LM135
LM235
LM335/A
400uA
LM135,
LM235,
LM335
400nA
1766M
SOB and PUT
thermo couple
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - JU LY 94 FEATU RES * 200 Volt VCE0 * 1 A m p continuous current * Ptot= 1 W a tt REFER TO Z TX 755 FOR G R A P H S E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L Collector-Base Voltage
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-100hA
-160V,
-500mA,
-50mA*
-200mA*
-10mA,
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CB140
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX454 ZTX455 ISSUE 2 - MARCH 1994_ FEATURES * 140 V olt V CE0 * 1 A m p c o n tin u o u s current * Ptot= 1 W att E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L ZTX454
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ZTX454
ZTX455
ZTX455
CB140
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lm 35 temperature sensor
Abstract: LM235-LM335 IC LM 335
Text: r r : sg s-th o m so n lm i 35 LM235-LM335,A PRECISION TEMPERATURE SENSORS . • ■ . DIRECTLY CALIBRATED IN °K 1°C INITIAL ACCURACY OPERATES FROM 450^iA TO 5mA LESS THAN 1Ü DYNAMIC IMPEDANCE Z T092 Plastic Package D S 08 DESCRIPTION The LM135, LM235, LM335 are precision tempera
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LM235-LM335
LM135,
LM235,
LM335
450jjA
lm 35 temperature sensor
IC LM 335
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ZTX450
Abstract: ZTX451
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX450 ZTX451 ISSUE 2 - MARCH 1994_ FEATURES * 60 V o lt VCE0 * 1 A m p c o n tin u o u s c u rre n t * Ptot= 1 W a tt E-Line T092 Compatible ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL Collector-Base Voltage
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ZTX450
ZTX451
ZTX451
150mA,
100MHz
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 2 -M ARCH 94 FEATURES * 100 Volt VDS * RDS.on =8fl / Ds REFER TO ZVP2110A FOR GRAPHS E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Drain-Source Voltage V DS -100 V b -230 mA
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ZVP2110A
cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR FXT757 ISSUE 1 - FEB 94_ FEATURES * 300 V o lt V CE0 * 0.5 A m p c o n tin u o u s c u rre n t * Ptot= 1 W a tt E-Line T092 Compatible REFER TO ZTX757 FOR GRAPHS
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FXT757
ZTX757
-100nA,
-10mA,
-200V,
-100mA,
-100mAr
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