Untitled
Abstract: No abstract text available
Text: DSEI2X161-02A Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition)75# Circuits Per Package2 Diodes Per Circuit1 I(F) Max. (A) Forward Current V(RRM) (V) Rep.Pk.Rev. Voltage t(rr) Max.(s) Rev. Rec. Time @I(F) (A) (Test Condition)
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DSEI2X161-02A
StyleSOT-227B
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Untitled
Abstract: No abstract text available
Text: HD1707 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current80m V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time20n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)3.0m V(FM) Max.(V) Forward Voltage.75 @I(FM) (A) (Test Condition)100m
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HD1707
Current80m
Voltage50
Time20n
Current25u
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Untitled
Abstract: No abstract text available
Text: HD1706 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current80m V(RRM)(V) Rep.Pk.Rev. Voltage80 t(rr) Max.(s) Rev.Rec. Time15n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)3.0m V(FM) Max.(V) Forward Voltage.75 @I(FM) (A) (Test Condition)100m
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HD1706
Current80m
Voltage80
Time15n
Current25u
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Untitled
Abstract: No abstract text available
Text: BAS32L Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage75 t(rr) Max.(s) Rev.Rec. Time4.0n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)10m V(FM) Max.(V) Forward Voltage.75 @I(FM) (A) (Test Condition)5.0m
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BAS32L
Current200m
Voltage75
Current100u
StyleSOD-80
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AAAQ
Abstract: N2 SOT23-6 mosfet n3 MAX4529 MAX4529CPA MAX4529CSA MAX4529CUA MAX4529CUT-T MAX4529EPA MAX4529ESA
Text: 19-1262; Rev 0; 3/98 Low-Voltage, Bidirectional RF/Video Switch The MAX4529 is a low-voltage T-switch designed for switching RF and video signals from DC to 300MHz in 50Ω and 75Ω systems. This switch is constructed in a “T” configuration, ensuring excellent high-frequency off
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MAX4529
300MHz
-80dB
10MHz.
MAX4529
AAAQ
N2 SOT23-6
mosfet n3
MAX4529CPA
MAX4529CSA
MAX4529CUA
MAX4529CUT-T
MAX4529EPA
MAX4529ESA
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Untitled
Abstract: No abstract text available
Text: 19-1262; Rev 1; 5/01 Low-Voltage, Bidirectional RF/Video Switch The MAX4529 is a low-voltage T-switch designed for switching RF and video signals from DC to 300MHz in 50Ω and 75Ω systems. This switch is constructed in a “T” configuration, ensuring excellent high-frequency off
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MAX4529
300MHz
-80dB
10MHz.
MAX4529
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MAX4529
Abstract: MAX4529CPA MAX4529CSA MAX4529CUA MAX4529CUT-T MAX4529EPA MAX4529ESA MAX4529EUA MAX4529EUT-T N2 SOT23-6
Text: 19-1262; Rev 1; 5/01 Low-Voltage, Bidirectional RF/Video Switch The MAX4529 is a low-voltage T-switch designed for switching RF and video signals from DC to 300MHz in 50Ω and 75Ω systems. This switch is constructed in a “T” configuration, ensuring excellent high-frequency off
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MAX4529
300MHz
-80dB
10MHz.
MAX4529
MAX4529CPA
MAX4529CSA
MAX4529CUA
MAX4529CUT-T
MAX4529EPA
MAX4529ESA
MAX4529EUA
MAX4529EUT-T
N2 SOT23-6
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IC Analog Switch Chip
Abstract: MAX4529 MAX4529CPA MAX4529CSA MAX4529CUA MAX4529CUT-T MAX4529EPA MAX4529ESA MAX4529EUA MAX4529EUT-T
Text: 19-1262; Rev 1; 5/01 Low-Voltage, Bidirectional RF/Video Switch The MAX4529 is a low-voltage T-switch designed for switching RF and video signals from DC to 300MHz in 50Ω and 75Ω systems. This switch is constructed in a “T” configuration, ensuring excellent high-frequency off
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MAX4529
300MHz
-80dB
10MHz.
MAX4529
IC Analog Switch Chip
MAX4529CPA
MAX4529CSA
MAX4529CUA
MAX4529CUT-T
MAX4529EPA
MAX4529ESA
MAX4529EUA
MAX4529EUT-T
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Untitled
Abstract: No abstract text available
Text: www.MICROSEMI.com UM4000 / UM4900 HIGH POWER PIN DIODES RoHS Compliant Versions Available DESCRIPTION K EY FEAT URES ABSOLU T E M AX I M U M RAT I N GS AT 2 5 º C U N LESS OT H ERWI SE SPECI FI ED Package Condition UM4000 PD (W) C D • Series resistance rated at 0.5
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UM4000
UM4900
UM4000
UMX4000,
UMX4900)
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Untitled
Abstract: No abstract text available
Text: UM7000 / UM7100 / UM7200 HIGH POWER PIN DIODES TM RoHS Compliant Versions Available K EY FEAT U RES DESCRIPT ION • Voltage ratings to 1000V UM7000 • Average power dissipation to 10 W Series resistance as low as 0.25 Ω Carrier lifetime greater than 2.5 µs
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UM7000
UM7100
UM7200
UM7000)
UM7200
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Untitled
Abstract: No abstract text available
Text: OM6OL6OSB OM50F60SB Prelim inary Data Sheet OM45L120SB OM35F12QSB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES |o _ o i © © High Current, High Voltage 60 0V And 1200V. Up To 75 A m p IG B T s With F R E D Diodes FEATURES • • • • •
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OM50F60SB
OM45L120SB
OM35F12QSB
60L60SB
45L120SB
50F60SB
35F120SB
45L120SB
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Untitled
Abstract: No abstract text available
Text: BAS28 y V SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists o f tw o separate diodes in one m icrominiature envelope intended fo r surface mounting. It concerns fast-switching general-purpose diodes. Q UICK REFERENCE D A T A VR max. 75 V Repetitive peak reverse voltage
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BAS28
BAS28
BAW62;
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BAW62
Abstract: FR 309 diode
Text: S ’ S’S - o z z . BAW62 HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a D O -35 envelope. The BAW 62 is prim arily intended for fast logic applications. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage VR max. 75 V Repetitive peak reverse voltage
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BAW62
BAW62
EAVV62
FR 309 diode
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1N4000 silicon diodes
Abstract: 1N4000 - 1N4007 1n4000 1n4000 a 1n4007
Text: 1N4001 . 1N4007 BY133. P513 FA G O R^ 1Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1.600 V. Ï ! to ; 1— il_ o\ Ç.35 58.5 Current 1.0 A. at 75°C. a t r0 .2 0.5 • Low cost • Diffused junction • High current capability
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1N4001
1N4007
BY133.
DO-15
1N4000
1N4000 silicon diodes
1N4000 - 1N4007
1n4000 a 1n4007
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CIL 1302
Abstract: cil 1305
Text: T E L E D Y N E COMPONENTS a*U7fe.aa ÜOÜbt.75 3 EflE D ECONOMY LINE CURRENT REGULATOR FIELD EFFECT DIODES XCTP1U AiC CIL-1300 thru CIL-1305 c m • CURRENT CONSTANT OVER WIDE VOLTAGE RANGE • HIGH SOURCE IMPEDANCE • CONNECT IN PARALLEL FOR HIGHER CURRENT
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CIL-1300
CIL-1305
CIL 1302
cil 1305
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Untitled
Abstract: No abstract text available
Text: t.ME D • Sfi7bbSl OGDTV'îS 007 « N X n MAXIM I N T E G R A T E D P R O D U C T S 19-3786; Rav 1; 9/92 / l / l / I X I / l / l High-Speed, Low -Voltage, M icropow er Op Amps D escrip tio n The MAX402/MAX438 require less than 75|iA of supply current while delivering 2MHz gain bandw idth with 7V/|xs
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MAX402/MAX438
MAX402)
MAX438)
MAX402
MAX403
10MHz
AX403/MAX439
375nA
MAX438EPA
MAX438ESA
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TRANSISTOR NPN BA RV SOT - 89
Abstract: bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124
Text: Selection Guide Page Small Signal Transistors 44 Small Signal DMOS FETs 55 Junction FETs 56 Digital Transistor 56 Power Transistors 57 Switching Diodes 60 Schottky Diodes 63 Low Leakage Diodes 66 Ultra Low Leakage Diodes 66 Stabistor Diodes 67 Zener Diodes
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CQ89N
CQ89DS
CQ89MS
CQ89NS
OT-89
CMPSS061
CMPS5062
CMPS5063
CMPS5064
CZS5064
TRANSISTOR NPN BA RV SOT - 89
bc816
transistor ZT 2222a
BO338
CMPSH-3SE
2222A transistors
NPN 800V 900 watt 3a
TR 3906 PNP SM
BG SOT26
CMPZ4124
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Semicon volume 1
Abstract: HVC-50F s5a1 LTA 902 sx
Text: Pulse Rated 5W Zener Diode FEATURES • 1200 WATTS PEAK POWER • 5 WATTS @ 75°C AME5IENT • SURGE RATED • LOW FORWARD VO LTAG E DROP • COLD CASE DESIGN (M OLDED) • H IG H TEM PERATURE OPERATION • SPECIAL M A TC H IN G A V A ILA B LE Semicon TZC Zener diodes are high grade Solid State Voltage
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1TP600
CTP700
CTP800
CTP1000
CTP1200
VB100
VB200
VB300
VB400
VB500
Semicon volume 1
HVC-50F
s5a1
LTA 902 sx
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Untitled
Abstract: No abstract text available
Text: t eccor e l e c t r o n i c s i n c \ •is dooiis? 3 5T|flä7aön r - i t - 2,3 S I A M C ? !# !! - The New Standard I If your electronic equipment is being protected by zener diodes, gas discharge tubes, MOV’s or other types of protectors, you are taking un
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O-218
O-202
O-202
O-220
BR601
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1N4T48
Abstract: 1N5526B JANTX diode zener 3144 voltage 1N941 1N5283 diode zener 3144 1N4611A 1N3496 1N3497 1N3499
Text: C 0 D I SEMICONDUCTOR INC 2RE D 177S47G OGDGbSS b • C O D I M il 7=0 », 0°i c Silicon Diodes JEDEC REGISTERED TEMPERATURE COMPENSATED VOLTAGE REFERENCE DIODES D O - 7 Package V o lta g e C u rre n t mA V o lts 62 62 64 6.4 64 64 65 66 66 66 8 4 8 5 85
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177S47G
T-n-07
1N821*
1N823Â
1N825Â
1N827Â
1N829*
1N3500
1N3496
1N3497
1N4T48
1N5526B JANTX
diode zener 3144 voltage
1N941
1N5283
diode zener 3144
1N4611A
1N3499
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1N4148 DL-35
Abstract: n4148 1N4148 DL-35 PACKAGE Diode N4148 DL4148 package DO-41 package 1N4148 R1200 R1200F R1500 R1800
Text: DIODES INC m 35E D 20407=53 ÜQ0Q3b0 T BiDII HIGH VOLTAGE RECTIFIERS OPERATING/STORAGE TEMPERATURE RANGE -6 5 °C to +150°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum Forward Peak Surge Current
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VOLTAGE/DO-41
/DO-15
R1200
R1500
R1800
R2000
R2500
R3000
DO-15
1N914
1N4148 DL-35
n4148
1N4148 DL-35 PACKAGE
Diode N4148
DL4148 package
DO-41 package 1N4148
R1200F
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S216S02 Application circuit
Abstract: PC113 SHARP GP1U78R GP1S73P S202S02 application IS471FS pt461100 s26md IS489 GP1A71A1
Text: Solid State Low Po we v o l t a g e R e Chopper R< P M i T i a r v H e Quick Reference Guide Quick Reference Guide • Infrared Emitting Diodes « For IR Data Communication IrDA » Mode! No. Features Operating Suppply Voltage v cc (V) GL1F20 Applicable to IrDA 1.0
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GL1F20
12MHz
S101S06V
S201S06V
S102S02
S112S02
S116S02
S202S02
S212S02
S216S02
S216S02 Application circuit
PC113 SHARP
GP1U78R
GP1S73P
S202S02 application
IS471FS
pt461100
s26md
IS489
GP1A71A1
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OM35F120SB
Abstract: OM45L120SB OM50F60SB OM60L60SB SCHEMATIC WITH IGBTS R5151
Text: Preliminary Data Sheet OM6OL6OSB OM50F60SB OM45L120SB QM35F120SB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High C urrent, High Voltage 600V A nd 1200V, Up To 75 A m p IGBTs W ith FRED Diodes FEATURES • • • • • • • Includes Internal FRED Diode
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OM45L120SB
OM50F60SB
OM35F120SB
MIL-S-19500,
20VDC
60L60SB
45L120SB
50F60SB
35F120SB
60L60SB
OM35F120SB
OM60L60SB
SCHEMATIC WITH IGBTS
R5151
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IN827 Temperature Compensated Zener
Abstract: 1N4T48 IN4571 1N4611A 1N5306 JAN 1n829 noise diode zener 3144 voltage in4572 IN821 IN827
Text: C 0 D I SEMICONDUCTOR INC 2«iE D 1 7 7 5 4 7 0 0D0 CI L55 b B I C 0 D I Mi l ElSifl ni T -O U O °l c Silicon Diodes JEDEC REGISTERED TEMPERATURE COMPENSATED VOLTAGE REFERENCE DIODES D O - 7 Package V o lta ge C u rre n t mA V o lts 62 62 64 6.4 64 64 65
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0D0CIL55
T-II-07
1N821Â
1N823Â
1N825*
1N827Â
1N829*
1N3500
1N3496
1N3497
IN827 Temperature Compensated Zener
1N4T48
IN4571
1N4611A
1N5306 JAN
1n829 noise
diode zener 3144 voltage
in4572
IN821
IN827
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