definition RMS forward current
Abstract: MITSUBISHI GATE TURN-OFF THYRISTOR gto Gate Turn-off Thyristor Gate Turn-Off Thyristors gto mitsubishi GTO thyristor Application notes
Text: MITSUBISHI HIGH POWER SEMICONDUCTORS SYMBOLOGY 1. Power semiconductor devices, general use Definition/description Parameter Symbol Rth Thermal resistance Defined when junction power dissipation results in a balanced state of thermal flow. Specifies the degree of temperature rise per unit of power, measuring junction temperature from a specified
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SMYV001
Abstract: No abstract text available
Text: MOS MEMORY GLOSSARY SYMBOLS, TERMS, AND DEFINITIONS SMYV001 – MARCH 1998 GLOSSARY Access time – The time interval between the application of a specific input pulse and the availability of valid signals at an output. Example symbology: Classified ta A
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SMYV001
SMYV001
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SYMBOLOGY Power semiconductor devices
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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REJ27G0018-0100/Rev
SYMBOLOGY Power semiconductor devices
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33178
Abstract: 1N5550 1N5550US 1N5551 1N5552 1N5553 1N5554 1N5554US 1N5554 JANTXV equivalent 1N5554 JANTXV
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 10 May 2010. MIL-PRF-19500/420L W/Amendment 1 10 February 2010 SUPERSEDING MIL-PRF-19500/420L 27 June 2008 PERFORMANCE SPECIFICATION SHEET
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MIL-PRF-19500/420L
1N5550
1N5554,
1N5550US
1N5554US,
MIL-PRF-19500.
33178
1N5551
1N5552
1N5553
1N5554
1N5554US
1N5554 JANTXV equivalent
1N5554 JANTXV
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33178
Abstract: JANTX 1N5552 1N5550 1N5550US 1N5551 1N5551US 1N5552 1N5554 1N5554US 1n5551 diode
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 July 2004. MIL-PRF-19500/420H 19 April 2004 SUPERSEDING MIL-PRF-19500/420G 30 December 2002 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER,
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MIL-PRF-19500/420H
MIL-PRF-19500/420G
1N5550
1N5554,
1N5550US
1N5554US,
MIL-PRF-19500.
33178
JANTX 1N5552
1N5551
1N5551US
1N5552
1N5554
1N5554US
1n5551 diode
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Untitled
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 6 December 2013. INCH-POUND MIL-PRF-19500/420M 6 September 2013 SUPERSEDING MIL-PRF-19500/420L 27 June 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER,
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MIL-PRF-19500/420M
MIL-PRF-19500/420L
1N5550
1N5554,
1N5550US
1N5554US,
MIL-PRF-19500.
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FED-STD-H28 chamfer
Abstract: 1N6304 1N6305 1N6306 DO-203AB
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 January 2008. INCH-POUND MIL-PRF-19500/550C 18 October 2007 SUPERSEDING MIL-PRF-19500/550B 20 October 1998 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST-RECOVERY, HIGH CURRENT,
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MIL-PRF-19500/550C
MIL-PRF-19500/550B
1N6304,
1N6305,
1N6306,
MIL-PRF-19500.
FED-STD-H28 chamfer
1N6304
1N6305
1N6306
DO-203AB
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1N5812 diode
Abstract: 1N5812 1N5812R 1N5814 1N5814R 1N5816 1N5816R UNF-2A 190-32 UNF
Text: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 April 2009. MIL-PRF-19500/478J 27 January 2010 SUPERSEDING MIL-PRF-19500/478H 11 March 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY,
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MIL-PRF-19500/478J
MIL-PRF-19500/478H
1N5812,
1N5814,
1N5816,
MIL-PRF-19500.
1N5812 diode
1N5812
1N5812R
1N5814
1N5814R
1N5816
1N5816R
UNF-2A
190-32 UNF
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JANTXV 1N3595 equivalent
Abstract: No abstract text available
Text: INCH-POUND MIL-PRF-19500/241N 14 November 2013 SUPERSEDING MIL-PRF-19500/241M 25 January 2010 The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 January 2014. PERFORMANCE SPECIFICATION SHEET *
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MIL-PRF-19500/241N
MIL-PRF-19500/241M
1N3595-1,
1N3595UB,
1N3595UBCA,
1N3595UBD,
1N3595UBCC,
1N3595UB2,
1N3595UB2R,
1N3595US,
JANTXV 1N3595 equivalent
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1N6841U3
Abstract: SMD DIODE 739 V/1N6841U3
Text: 1N6840U3 and 1N6841U3 Compliant 35 and 45 VOLT, 10 AMP DUAL SCHOTTKY COMMON CATHODE CENTER TAP RECTIFIER Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/678 DESCRIPTION These low-profile 1N6840U3 and 1N6841U3 dual schottky rectifier devices are military
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1N6840U3
1N6841U3
MIL-PRF-19500/678
1N6840
1N6841.
MIL-PRF-19500/678.
1N6841U3
SMD DIODE 739
V/1N6841U3
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Untitled
Abstract: No abstract text available
Text: 1N6840U3 and 1N6841U3 Compliant 35 and 45 VOLT, 10 AMP DUAL SCHOTTKY COMMON CATHODE CENTER TAP RECTIFIER Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/678 DESCRIPTION These low-profile 1N6840U3 and 1N6841U3 dual schottky rectifier devices are military
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1N6840U3
1N6841U3
MIL-PRF-19500/678
1N6841U3
MIL-PRF-19500/678.
T4-LDS-0127,
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1N823-1
Abstract: 1N821-1 JANTX 1N821-1 1N821UR-1 1N823UR-1 1N825-1 1N825UR-1 1N827-1 1N827UR-1 1N829-1
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 May 2009. MIL-PRF-19500/159P 4 February 2009 SUPERSEDING MIL-PRF-19500/159N 1 APRIL 2008 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED,
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MIL-PRF-19500/159P
MIL-PRF-19500/159N
1N821-1,
1N823-1,
1N825-1,
1N827-1,
1N829-1,
1N821UR-1,
1N823UR-1,
1N825UR-1,
1N823-1
1N821-1 JANTX
1N821-1
1N821UR-1
1N823UR-1
1N825-1
1N825UR-1
1N827-1
1N827UR-1
1N829-1
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Untitled
Abstract: No abstract text available
Text: UT2005 – UT2060, UT3005 – UT3060, and UT4005 – UT4060 Available 2 AMP TO 4 AMP STANDARD RECOVERY RECTIFIERS DESCRIPTION High average power and surge capability make these series of devices attractive in many highreliability applications. All Microsemi rectifiers have a sleeve of pure hard glass fused to the silicon
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UT2005
UT2060,
UT3005
UT3060,
UT4005
UT4060
T4-LDS-0280,
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1N4568AUR-1
Abstract: 1n4573 die 1N4570A JANTX 1N4569AUR1 JANTX application notes 1n4575 1N4565A-1 1N4565AUR-1 1N4566A-1 1N4584A-1 1N4584AUR-1
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 May 2009. MIL-PRF-19500/452J 4 February 2009 SUPERSEDING MIL-PRF-19500/452H 26 March 2008 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED,
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MIL-PRF-19500/452J
MIL-PRF-19500/452H
1N4565A-1
1N4584A-1,
1N4565AUR-1
1N4584AUR-1,
1N4568AUR-1
1n4573 die
1N4570A JANTX
1N4569AUR1 JANTX
application notes 1n4575
1N4565AUR-1
1N4566A-1
1N4584A-1
1N4584AUR-1
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Microsemi micronote series 050
Abstract: No abstract text available
Text: UT2005 – UT2060, UT3005 – UT3060, and UT4005 – UT4060 2 Amp To 4 Amp Standard Recovery Rectifiers Available DESCRIPTION High average power and surge capability make these series of devices attractive in many highreliability applications. All Microsemi rectifiers have a sleeve of pure hard glass fused to the silicon
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UT2005
UT2060,
UT3005
UT3060,
UT4005
UT4060
T4-LDS-0280,
Microsemi micronote series 050
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Microsemi micronote series 050
Abstract: No abstract text available
Text: UT2005 – UT2060, UT3005 – UT3060, and UT4005 – UT4060 Available 2 AMP TO 4 AMP STANDARD RECOVERY RECTIFIERS DESCRIPTION High average power and surge capability make these series of devices attractive in many highreliability applications. All Microsemi rectifiers have a sleeve of pure hard glass fused to the silicon
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UT2005
UT2060,
UT3005
UT3060,
UT4005
UT4060
T4-LDS-0280,
Microsemi micronote series 050
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ut264
Abstract: UT347 Microsemi micronote series 050
Text: UT236 – UT347, UT249 – UT363, UT251 – UT364 and UT261 – UT368 Available 1 AMP TO 2 AMP STANDARD RECOVERY RECTIFIERS DESCRIPTION This miniature, standard recovery rectifier diode series offers the user extreme reliability for highreliability applications. These devices are available in the leaded A package configuration.
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UT236
UT347,
UT249
UT363,
UT251
UT364
UT261
UT368
T4-LDS-0289,
12XXXX)
ut264
UT347
Microsemi micronote series 050
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UT347
Abstract: Microsemi micronote series 050
Text: UT236 – UT347, UT249 – UT363, UT251 – UT364 and UT261 – UT368 1 Amp To 2 Amp Standard Recovery Rectifiers Available DESCRIPTION This miniature, standard recovery rectifier diode series offers the user extreme reliability for highreliability applications. These devices are available in the leaded A package configuration.
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UT236
UT347,
UT249
UT363,
UT251
UT364
UT261
UT368
T4-LDS-0289,
UT347
Microsemi micronote series 050
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UT347
Abstract: Microsemi micronote series 050 UT362 UT242
Text: UT236 – UT347, UT249 – UT363, UT251 – UT364 and UT261 – UT268 1 Amp To 2 Amp Standard Recovery Rectifiers Available DESCRIPTION This miniature, standard recovery rectifier diode series offers the user extreme reliability for highreliability applications. These devices are available in the leaded A package configuration.
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UT236
UT347,
UT249
UT363,
UT251
UT364
UT261
UT268
T4-LDS-0289,
UT347
Microsemi micronote series 050
UT362
UT242
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DO213-AB color band
Abstract: No abstract text available
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 October 2006. MIL-PRF-19500/115L 5 July 2006 SUPERSEDING MIL-PRF-19500/115K 16 August 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES
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MIL-PRF-19500/115L
MIL-PRF-19500/115K
1N3821A
1N3828A,
1N3016B
1N3051B,
1N3821A-1
1N3828A-1,
1N3016B-1
1N3051B-1,
DO213-AB color band
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equivalent for transistor tt 2222
Abstract: 2N6678T1 2N6676T1 JANS 2N6678T1 2N6691 2N6693 2n6678 2N6676 JANS 2N6676T1 2N6678 JANTX equivalent
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 25 July 2009. MIL-PRF-19500/538E 25 April 2009 SUPERSEDING MIL-PRF-19500/538D 26 June 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,
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MIL-PRF-19500/538E
MIL-PRF-19500/538D
2N6676,
2N6678,
2N6676T1,
2N6678T1,
2N6676T3,
2N6678T3,
2N6691,
2N6693,
equivalent for transistor tt 2222
2N6678T1
2N6676T1
JANS 2N6678T1
2N6691
2N6693
2n6678
2N6676
JANS 2N6676T1
2N6678 JANTX equivalent
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transistor equivalent 2n1893
Abstract: 2N1893 equivalent 2N1893S 2N1893 2N720A 65kA
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 7 May 2010. MIL-PRF-19500/182G w/AMENDMENT 1 7 February 2010 SUPERSEDING MIL-PRF-19500/182G 2 August 2006 PERFORMANCE SPECIFICATION SHEET
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MIL-PRF-19500/182G
2N720A,
2N720AUB,
2N1893,
2N1893S,
JANHC2N720A,
JANKC2N720A
MIL-PRF-19500.
transistor equivalent 2n1893
2N1893 equivalent
2N1893S
2N1893
2N720A
65kA
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OPTO tl431
Abstract: TPS5904 diode led ir light emitting diode LED IEC695-2-2 TL431 TPS5904A TPS5904AP TPS5904P
Text: TPS5904, TPS5904A OPTO-ISOLATED FEEDBACK AMPLIFIERS SOES016A – MAY 1995 – REVISED OCTOBER 1995 • • • • • • TL431 Precision Programmable Reference and an Optocoupler in a Single Package 0.4% Voltage-Reference Tolerance Controlled Optocoupler CTRs:
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TPS5904,
TPS5904A
SOES016A
TL431
TPS5904
E65085
TPS5904
TPS5904A
TL431
OPTO tl431
diode led ir
light emitting diode LED
IEC695-2-2
TPS5904AP
TPS5904P
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UT347
Abstract: Microsemi micronote series 050
Text: UT236 – UT347, UT249 – UT363, UT251 – UT364 and UT261 – UT368 1 Amp To 2 Amp Standard Recovery Rectifiers Available DESCRIPTION This miniature, standard recovery rectifier diode series offers the user extreme reliability for highreliability applications. These devices are available in the leaded A package configuration.
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UT236
UT347,
UT249
UT363,
UT251
UT364
UT261
UT368
T4-LDS-0289,
UT347
Microsemi micronote series 050
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