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    SY10EL11ZC

    Abstract: No abstract text available
    Text: This Material C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r ClockWoiks PRELIMINARY SY10/100EL11 SEMICONDUCTOR AC ELECTRICAL CHARACTERISTICS V ee = V ee M in. to V ee (M ax.); VCC = G N D +85°C +25°C 0°C _40°C Parameter


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    PDF SY10/100EL11 SY10EL11ZC SY1OOEL11ZC T0G13Ã 0Q005fl0

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    Abstract: No abstract text available
    Text: 1:2 DIFFERENTIAL FANOUT BUFFER SYNERGY SEMICONDUCTOR pr fm m Î Î Î aÏ y SY10/100EL11 bYlO/IOOELIl DESCRIPTION FEATURES • 265ps propagation delay The SY10EL/100EL11 are 1:2 differential fanout gates. These devices are functionally similar to the E111 devices,


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    PDF SY10/100EL11 265ps SY10EL/100EL11 L11ZC SY1OOEL11ZC