diodes sy 360
Abstract: D1390 diodes SY 200
Text: Pomona FEATURES: • Provides two-terminal isolation. • Top stack-up receptacles isolated from lower plug to permit addition of series resistors, diodes, etc. • Ideal for computers, lab, circuit design and testing. • Bright tin plated solder turret terminals for
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QQ-B-626,
QQ-N-290,
2500WVDC
00\D1390
diodes sy 360
D1390
diodes SY 200
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Untitled
Abstract: No abstract text available
Text: Pomona FEATURES: • Provides two-terminal isolation. • Top stack-up receptacles isolated from lower plug to permit addition of series resistors, diodes, etc. • Ideal for computers, lab, circuit design and testing. • Bright tin plated solder turret terminals for
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QQ-B-626,
QQ-N-290,
2500WVDC
\Release\DataSheets\FlukeDataSheet\d1390
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diodes sy 360
Abstract: diodes SY 200 MIL-T-10727 2500WVDC
Text: Pomona FEATURES: • Provides two-terminal isolation. • Top stack-up receptacles isolated from lower plug to permit addition of series resistors, diodes, etc. • Ideal for computers, lab, circuit design and testing. • Bright tin plated solder turret terminals for
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QQ-B-626,
QQ-N-290,
2500WVDC
\Release\DataSheets\FlukeDataSheet\d1390
diodes sy 360
diodes SY 200
MIL-T-10727
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sy 360 diode
Abstract: diodes sy 360 Front Monitor Diode 33R3763
Text: SSI 33R3763 Laser Driver IC Preproduction May 1998 FEATURES The SSI 33R3763 is a high performance BiCMOS single chip laser driver for high-speed data reading and recording on an optical disc. The SSI 33R3763 is compatible with common-anode laser diodes. The IC
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33R3763
33R3763
64-lead
sy 360 diode
diodes sy 360
Front Monitor Diode
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Untitled
Abstract: No abstract text available
Text: SBR100-10JS Ordering number : ENA0560 SANYO Semiconductors DATA SHEET SBR100-10JS Schottky Barrier Diode Twin Type • Cathode Common 100V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features
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ENA0560
SBR100-10JS
A0560-3/3
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diode sy 710
Abstract: SBR200-16JS SBR200-16
Text: SBR200-16JS Ordering number : ENA0525 SANYO Semiconductors DATA SHEET SBR200-16JS Schottky Barrier Diode Twin Type • Cathode Common 160V, 20A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features
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SBR200-16JS
ENA0525
A0525-3/3
diode sy 710
SBR200-16JS
SBR200-16
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diodes sy 360
Abstract: SB50-18 sy 360 diode
Text: SB50-18 Ordering number : EN2579C SANYO Semiconductors DATA SHEET SB50-18 Schottky Barrier Diode Twin Type • Cathode Common 180V, 50A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • •
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SB50-18
EN2579C
diodes sy 360
SB50-18
sy 360 diode
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diode sy 710
Abstract: SB10015M A0444
Text: SB10015M Ordering number : ENA0444 SANYO Semiconductors DATA SHEET SB10015M Low IR Schottky Barrier Diode 15V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small switching noise.
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SB10015M
ENA0444
A0444-3/3
diode sy 710
SB10015M
A0444
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Untitled
Abstract: No abstract text available
Text: SBR200-16JS Ordering number : ENA0525 SANYO Semiconductors DATA SHEET SBR200-16JS Schottky Barrier Diode Twin Type • Cathode Common 160V, 20A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features
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SBR200-16JS
ENA0525
A0525-3/3
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sy 360 diode
Abstract: SB50-18
Text: SB50-18 Ordering number : EN2579C SANYO Semiconductors DATA SHEET SB50-18 Schottky Barrier Diode Twin Type • Cathode Common 180V, 50A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • •
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SB50-18
EN2579C
sy 360 diode
SB50-18
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diode sy 710
Abstract: SBR100-10JS
Text: SBR100-10JS Ordering number : ENA0560 SANYO Semiconductors DATA SHEET SBR100-10JS Schottky Barrier Diode Twin Type • Cathode Common 100V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features
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SBR100-10JS
ENA0560
10scribed
A0560-3/3
diode sy 710
SBR100-10JS
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diode sy 185
Abstract: sy 360 diode BL0508-09-73
Text: 21.9mm x 21.9mm LED CLUSTER BL0508-09-73 Description Features zHIGH The Super Bright Red source color devices are made VISIBILITY. zEMITTING with Gallium Aluminum Arsenide Red Light Emitting COLOR: GREEN, RED AND ORANGE Diode. MIXED COLOR . zNO. The Super Bright Green color devices are made Gallium
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BL0508-09-73
BL0508-09-73-2
MAR/01/2001
diode sy 185
sy 360 diode
BL0508-09-73
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Untitled
Abstract: No abstract text available
Text: SBE808 Ordering number : ENA0451 SANYO Semiconductors DATA SHEET SBE808 Schottky Barrier Diode 15V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small switching noise. Low leakage current and high reliability due to planar structure.
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ENA0451
SBE808
A0451-3/3
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Untitled
Abstract: No abstract text available
Text: SBE808 Ordering number : ENA0451 SANYO Semiconductors DATA SHEET SBE808 Schottky Barrier Diode 15V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small switching noise. Low leakage current and high reliability due to planar structure.
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SBE808
ENA0451
A0451-3/3
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sy 170
Abstract: SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR
Text: FUNKAMATEUR-Bauelementeinformation VD Vergleichsliste für Dioden DDR/international D D R - Vergleichs Typ typ GA 100 G A 101 G A 102 GA 104 G A 105 GAY 61 GAY 64 SA 412 SA 415 SA 418 SAY 12 SAY 16 o SAY 17 SAY 18 SAY 20 SAY 30 SAY 32 SAY 40 SAY 42 SY 170
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N4001.
sy 170
SY 356
SY 360 05
sy 710
sy 360
Dioden SY 250
byx 21
SY 320
sy710
Halbleiterbauelemente DDR
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Halbleiterbauelemente DDR
Abstract: sy 170 diode sy-180 diode sy 171 10 diode sy-170 mikroelektronik DDR mikroelektronik Heft 12 VEB mikroelektronik SY 180 Applikation Information
Text: m o ß ^ t s ie le l- c ia n o r ill- i Information Applikation INFORMATION A PPLIKA TIO N M IK R O E L E K T R O N IK Heft 16: L E IS T U N G S -E L E K T R O N IK II Bauelemente-Sortiment der DDR -Teil 1: Dioden- VEB GLEICHRICHTERWERK STAHNSDORF im VEB Kombinat Mikroelektronik
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diode sy 345
Abstract: diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337
Text: SERVICE-MITTEILUNGEN V E B R F T I N D U S T R I E V E R T R I E B R U N D F U N K UND F E R N S E H E N t B i n n a |r a d i o - t e l e v i s i o n I Ausgobe 1-2 _ _ Febr. 89 1-7 Mitteilung aus dam VEB RFT IV RuF Leipzig, Organisation Plan der Inventurtermine Ersatztell/sroßhandel 1989
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III/18/379
diode sy 345
diode SY 192
sd 339
sy 320 diode
SD 338
SY 345
KT 829 b
k3451
KT 828 A
SD337
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diodes sy 360
Abstract: diode sy 161
Text: Philips Sem iconductors Product specification General purpose double diode BAV23 PINNING FEATU RES D E S C R IP T IO N • Sm all plastic S M D package The B A V 23 consists of two general purpose diodes fabricated in planar technology, and encapsulated in the
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BAV23
diodes sy 360
diode sy 161
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6P45S
Abstract: 6N23P 6P14P Selenstab 5 GE 200 AF Hochsp.leitg 6F1P service-mitteilungen D814D D814A hsk 103 taa550
Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N m m 1r a d i o - television QKTOBKR | 1 9 8 1 11 SEITE Mitteilung auf dem 7KB Fernsehgerätewerke "Friedr. Sögels" Staßfurt Servlcehi nwels zum SECAM - IS - Dekoder A 295 D» A 220 D
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TGLIO395
III/I8/379
6P45S
6N23P
6P14P
Selenstab 5 GE 200 AF Hochsp.leitg
6F1P
service-mitteilungen
D814D
D814A
hsk 103
taa550
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Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTOR U10A2CIA TE CHNICAL DATA ULTRA FAST RECOVERY RECTIFIER DIODE SW ITC H IN G TY PE POW ER SUPPLY APPLICATIO N C O N V E R T E R & CH O PP E R A PPLICATION. SJ MILLIMETERS 10.0±0.3 15.010.3 FEA T U RE S 2.70+0.3 0.76+0.09/-0.05 <t>3.2±0.2 3.010.3
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U10A2CIA
O-220IS
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Diode SY 356
Abstract: SY 356 sy356 34992 diode sy 345 C6042 Lautsprecher LP SY360 sy 360 stassfurt
Text: SERVICE-M ITTEILUNGEN V E B IN O U S T R tE V E R T R IE B R U N D F U N K U N D F E R N S E H E N r a d i o -television AUSGABE: Seite 1986 1-4 Mitteilung aus den VEB Fernsehgerätewerk Staßfurt 1. Ablösung der sowjetischen Ge-Diode D 7 D in den Geräten
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2001/DBBtjT
Diode SY 356
SY 356
sy356
34992
diode sy 345
C6042
Lautsprecher LP
SY360
sy 360
stassfurt
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LM4250
Abstract: OP-32 OP32AZ OP32EP OP32EZ OP32FP OP32FZ OP32GP OP32GZ SY 360 05
Text: ANALOG ► DEVICES High-Speed A ^ > 10 Programmable Micropower Operational Amplifier OP-32 FEATURES • • • • • • • • • • • • • O R D E R IN G IN F O R M A T IO N v osMAX (HV) 300 300 500 1000 CERDIP 8-PIN — OP32EP OP32FP OP32GP
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OP-32
500nA
115dB
000V/mV
110dB,
OP-32B/F
OP-32,
LM4250
OP-32
OP32AZ
OP32EP
OP32EZ
OP32FP
OP32FZ
OP32GP
OP32GZ
SY 360 05
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sy 320 diode
Abstract: sg 4001 diode GER-A sy 360 KT802A KY transistor diode sy 104 KT 315 a KT 802 mitteilung aus dem veb rft
Text: S E R V I C E - M I T T E I LU HClüN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN { p is i! ! r a d i o -televisioni | JANUAR 1982 4 1 SEITE 1-4 Mitteilung aus dem VEB Fernsehgerätewerke "Friedr. Engels" Staßfurt Farbreinheitsstörungen bei In-line-Bildröhren
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diodes sy 360
Abstract: diode sy 360 SSTPAD5
Text: JPAD5 S E R IE S JEFSSSSîfiS Low-Leakage Pico-Amp Diodes_ The JPAD5 Series of low-leakage diodes provides a superior alternative to conventional diode technology when reverse current leakage must be minimized. Its TO-92 package allows designers to maximize circuit
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JPAD50
OT-23,
CONDITION25
diodes sy 360
diode sy 360
SSTPAD5
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