Untitled
Abstract: No abstract text available
Text: DSB 60 C 30 PB advanced V RRM = 30 V I FAV = 2x 30 A V F = 0.49 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Rectifiers in switch mode power
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O-220
60747and
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A 0503
Abstract: No abstract text available
Text: MSWSE-005-15 Silicon PIN Diode Switch Element 0503 Molded Plastic DFN Package Description Features The MSWSE-005-30 is a PIN diode SPST switch element designed for medium incident power applications, up to 4W C.W. It has low insertion loss and medium isolation below 6.0 GHz.
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MSWSE-005-15
MSWSE-005-30
STD-J-20C
A17094
A 0503
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Untitled
Abstract: No abstract text available
Text: MSWSE-020-10 Silicon PIN Diode Switch Element 0503 Molded Plastic DFN Package Description Features The MSWSE-020-10 is a PIN diode SPST switch element designed for medium incident power applications, up to 30 W CW It has low insertion loss and medium isolation below 1 GHz.
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MSWSE-020-10
MSWSE-020-10
STD-J-20C
A17161
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Untitled
Abstract: No abstract text available
Text: MSWSS-040-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Non-Hermetic Description Features Surface mount medium power series shunt switch. The shunt device is bases on Metelics StripLine PIN which give broad band high isolation. This device can be surface mounted onto a PC board to give
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MSWSS-040-30
STD-J-20C
A17125
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Untitled
Abstract: No abstract text available
Text: DSA 60 C 60 HB tentative V RRM = 60 V I FAV = 2x 30 A V F = 0.65 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Rectifiers in switch mode power
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O-247
60747and
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Untitled
Abstract: No abstract text available
Text: DSA 30 C 150 HB advanced V RRM = 150 V I FAV = 2x 15 A V F = 0.74 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Rectifiers in switch mode power supplies SMPS
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O-247
60747and
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Untitled
Abstract: No abstract text available
Text: DSA 30 C 45 HB advanced V RRM = 45 V I FAV = 2x 15 A V F = 0.62 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Rectifiers in switch mode power
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O-247
60747and
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Untitled
Abstract: No abstract text available
Text: DSA 60 C 45 HB advanced V RRM = 45 V I FAV = 2x 30 A V F = 0.66 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Rectifiers in switch mode power
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O-247
60747and
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A55167
Abstract: MSWSH-100-30
Text: MSWSH-100-30 PIN Diode Shunt Switch Element 2 1 1 2 CM22 Heat sink is cathode, epoxy encapsulation Description A broadband, high linearity, high power shunt switch element in a 10 x 4 mm bolt channel metal package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA
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MSWSH-100-30
A17090
A55167
MSWSH-100-30
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Untitled
Abstract: No abstract text available
Text: MSWSS-040-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Non-Hermetic Description Features Surface mount medium power series shunt switch. The shunt device is bases on Metelics StripLine PIN which give broad band high isolation. This device can be surface mounted onto a PC board to give
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MSWSS-040-30
A17125,
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PDF
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Untitled
Abstract: No abstract text available
Text: MSWSS-040-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Non-Hermetic Description Features Surface mount medium power series shunt switch. The shunt device is bases on Metelics StripLine PIN which give broad band high isolation. This device can be surface mounted onto a PC board to give
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Original
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MSWSS-040-30
STD-J-20C
A17125
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PDF
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Untitled
Abstract: No abstract text available
Text: MSWSH-100-30 PIN Diode Shunt Switch Element 2 1 1 2 CM22 Heat sink is cathode, epoxy encapsulation Description A broadband, high linearity, high power shunt switch element in a 10 x 4 mm bolt channel metal package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA
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Original
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MSWSH-100-30
A17090
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PDF
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MSWSS-040-30
Abstract: No abstract text available
Text: MSWSS-040-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Non-Hermetic Description Features Surface mount medium power series shunt switch. The shunt device is bases on Metelics StripLine PIN which give broad band high isolation. This device can be surface mounted onto a PC board to give
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Original
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MSWSS-040-30
STD-J-20C
A17125
MSWSS-040-30
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diode zener d1
Abstract: No abstract text available
Text: MSWSH-100-30 PIN Diode Shunt Switch Element 2 1 1 2 CM22 Heat sink is cathode, epoxy encapsulation Description Features A broadband, high linearity, high power shunt switch element in a 10 x 4 mm bolt channel metal package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA
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Original
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MSWSH-100-30
A17090
diode zener d1
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KDS113
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS113 TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES E Small Package. M B M Small Total Capacitance : CT=1.2pF Max. . Low Series Resistance : rS=0.6 (Typ.). SYMBOL RATING UNIT Reverse Voltage VR 30 V
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KDS113
100MHz
KDS113
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Untitled
Abstract: No abstract text available
Text: JDP4P02AT TOSHIBA Diode Silicon Epitaxial PIN Type JDP4P02AT UHF~VHF Band RF Switch Applications Unit: mm • Low capacitance: CT = 0.3 pF typ. Characteristics Symbol Rating Unit Reverse voltage VR 30 V Forward current IF 50 mA Junction temperature Tj 150
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JDP4P02AT
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Untitled
Abstract: No abstract text available
Text: JDP4P02AT TOSHIBA Diode Silicon Epitaxial PIN Type JDP4P02AT UHF~VHF Band RF Switch Applications Unit: mm • Low capacitance: CT = 0.3 pF typ. Characteristics Symbol Rating Unit Reverse voltage VR 30 V Forward current IF 50 mA Junction temperature Tj 150
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JDP4P02AT
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JDP2S02ACT
Abstract: No abstract text available
Text: JDP2S02ACT TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02ACT Unit: mm + 0.02 0.38 - 0.03 UHF~VHF Band RF Switch Applications Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 30 V Forward current IF 50 mA Junction temperature
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JDP2S02ACT
JDP2S02ACT
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HP4291A
Abstract: JDP4P02AT
Text: JDP4P02AT TOSHIBA Diode Silicon Epitaxial PIN Type JDP4P02AT UHF~VHF Band RF Switch Applications Unit: mm • Low capacitance: CT = 0.3 pF typ. Characteristics Symbol Rating Unit Reverse voltage VR 30 V Forward current IF 50 mA Junction temperature Tj 150
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JDP4P02AT
HP4291A
JDP4P02AT
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PDF
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JDP4P02AT
Abstract: HP4291A
Text: JDP4P02AT TOSHIBA Diode Silicon Epitaxial PIN Type JDP4P02AT UHF~VHF Band RF Switch Applications Unit: mm • Low capacitance: CT = 0.3 pF typ. Characteristics Symbol Rating Unit Reverse voltage VR 30 V Forward current IF 50 mA Junction temperature Tj 150
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JDP4P02AT
JDP4P02AT
HP4291A
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PDF
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Untitled
Abstract: No abstract text available
Text: JDP2S02ACT TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02ACT Unit:mm UHF~VHF Band RF Switch Applications 1 2 0.05±0.03 0.6±0.05 0.5±0.03 Maximum Ratings Ta = 25°C Symbol Rating Unit Reverse voltage VR 30 V Forward current IF 50 mA Junction temperature
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JDP2S02ACT
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HP4291A
Abstract: JDP2S02ACT
Text: JDP2S02ACT TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02ACT Unit:mm UHF~VHF Band RF Switch Applications 1 2 Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Reverse voltage VR 30 V Forward current IF 50 mA Junction temperature Tj 150 °C Tstg −55~150
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JDP2S02ACT
HP4291A
JDP2S02ACT
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PDF
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HP4291A
Abstract: JDP4P02AT
Text: JDP4P02AT TOSHIBA Diode Silicon Epitaxial PIN Type JDP4P02AT UHF~VHF Band RF Switch Applications Unit: mm Low series resistance: rs = 1.0 Ω typ. • Low capacitance: CT = 0.3 pF (typ.) Symbol Rating Reverse voltage VR 30 V Forward current IF 50 mA Junction temperature
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JDP4P02AT
HP4291A
JDP4P02AT
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PDF
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Untitled
Abstract: No abstract text available
Text: CLI840 CLI850 CLI860 CLI870 Optical Switches GENERAL DESCRIPTIONS — This optical switch se ries couples a gallium arsenide infrared emitting diode and a silicon darlington phototransistor, for high sensor currents. Maximum sensor voltage of 30 volts allows
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CLI840
CLI850
CLI860
CLI870
CLI870has
33mw/Â
-20ma,
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