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    SWICHING TRANSISTOR Search Results

    SWICHING TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SWICHING TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PJ13007CZ

    Abstract: No abstract text available
    Text: PJ13007 NPN Epitaxial Silicon Transistor HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Swiching Regulator and Motor Control TO-220 ABSOLUTE MAXIMUM RATINGS Ta= 25℃ Characteristic Symbol Rating Uint Collector Base Voltage


    Original     		PDF PJ13007 O-220 PJ13007CZ O-220 PW300

    QW-R203-019

    Abstract: MJE13007
    Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO


    Original     		PDF MJE13007 O-220 QW-R203-019 100ms MJE13007

    PT 10000

    Abstract: No abstract text available
    Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220F 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO


    Original     		PDF MJE13005 O-220F QW-R219-001 PT 10000

    Untitled

    Abstract: No abstract text available
    Text: TK13H90A1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type MACHⅡ π-MOSIV TK13H90A1 Swiching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.78Ω (typ.) z High forward transfer admittance : |Yfs| = 11S (typ.)


    Original     		PDF TK13H90A1

    equivalent mje13005

    Abstract: MJE13005 ib11
    Text: MJE13005 NPN SILICON TRANSISTOR ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT o ABSOLUTE MAXIMUM RATINGS TA=25 C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO VEBO 700 400 9 4 75 Emitter-Base Voltage


    Original     		PDF MJE13005 equivalent mje13005 MJE13005 ib11

    mje13003

    Abstract: UTCMJE13003 transistor mje13003 MJE13003 transistor
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-126 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO


    Original     		PDF MJE13003 O-126 QW-R204-004 mje13003 UTCMJE13003 transistor mje13003 MJE13003 transistor

    transistor mje13003

    Abstract: mje13003 MJE13003 transistor UTCMJE13003 QW-R203-017 equivalent mje13003 transistor Ic 1A datasheet NPN NPN Transistor 1.5A 700V
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO


    Original     		PDF MJE13003 O-220 QW-R203-017 transistor mje13003 mje13003 MJE13003 transistor UTCMJE13003 equivalent mje13003 transistor Ic 1A datasheet NPN NPN Transistor 1.5A 700V

    TK130F06K3

    Abstract: K130F06K toshiba transistor date code marking K130F
    Text: TK130F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK130F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 220 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		PDF TK130F06K3 TK130F06K3 K130F06K toshiba transistor date code marking K130F

    Untitled

    Abstract: No abstract text available
    Text: TK130F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK130F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 220 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		PDF TK130F06K3 30mitation,

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit INTERNAL SCHEMATIC DIAGRAM C 2 1 B (3) TO-92 E (1) 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS


    Original     		PDF MJE13003 QW-R201-062

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220F 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO


    Original     		PDF MJE13005 O-220F Co000 QW-R219-001 100ms

    PJ13007 equivalent

    Abstract: PJ13007 swiching transistor PJ13007CZ swiching pj13007
    Text: PJ13007 NPN Epitaxial Silicon Transistor HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Swiching Regulator and Motor Control TO-220 ABSOLUTE MAXIMUM RATINGS Ta= 25 ℃ Characteristic Symbol Rating Uint Collector Base Voltage


    Original     		PDF PJ13007 O-220 PJ1300age PW300 PJ13007 equivalent PJ13007 swiching transistor PJ13007CZ swiching pj13007

    MJE13005

    Abstract: mje-13005 QW-R203-018 PT 10000
    Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO


    Original     		PDF MJE13005 O-220 QW-R203-018 100ms MJE13005 mje-13005 PT 10000

    npn transistors 400V 1A

    Abstract: swiching transistor Transformer 9v 2a MJE13005B
    Text: MJE13005B NPN SILICON TRANSISTOR ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT o ABSOLUTE MAXIMUM RATINGS TA=25 C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO VEBO 700 400 9 4 Emitter-Base Voltage Collector Current


    Original     		PDF MJE13005B npn transistors 400V 1A swiching transistor Transformer 9v 2a MJE13005B

    transistor MJe13007

    Abstract: mje13007 equivalent MJE13007 transistormje13007
    Text: NPN SILICON TRANSISTOR MJE13007 ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT ABSOLUTE MAXIMUM RATINGS TA=25oC CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO VEBO 700 400 9 8 80 Emitter-Base Voltage Collector Current


    Original     		PDF MJE13007 transistor MJe13007 mje13007 equivalent MJE13007 transistormje13007

    K150F04K

    Abstract: TK150 TK150F04K3 toshiba date code marking
    Text: TK150F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK150F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 210 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 40 V)


    Original     		PDF TK150F04K3 K150F04K TK150 TK150F04K3 toshiba date code marking

    Untitled

    Abstract: No abstract text available
    Text: TK100F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 174 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		PDF TK100F06K3 18mitation,

    KSC2752

    Abstract: No abstract text available
    Text: KSC2752 KSC2752 High Speed High Voltage Swiching Industrial Use TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 500 Units V


    Original     		PDF KSC2752 O-126 PW300 Cycle10% KSC2752

    toshiba transistor date code marking

    Abstract: TK100F06K3 K100F06K
    Text: TK100F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 174 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		PDF TK100F06K3 toshiba transistor date code marking TK100F06K3 K100F06K

    Untitled

    Abstract: No abstract text available
    Text: TK100F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 174 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		PDF TK100F06K3

    2SA1297

    Abstract: 2SC3267
    Text: TO SH IBA 2SC3267 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3267 Unit in mm POWER SWICHING APPLICATIONS 4.2M AX. • • Low Saturation Voltage : VCE (sat)“ 0.5V (Max.) @Iq = 2A Complementary to 2SA1297 0.4


    OCR Scan     		PDF 2SC3267 2SA1297 55MAX. 2SA1297 2SC3267

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3267 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3267 Unit in mm POWER SWICHING APPLICATIONS Û.2MAX. • • Low Saturation Voltage : V q E (sat)~ 0.5V (Max.) @Iq = 2A Complementary to 2SA1297 0.55MAX.


    OCR Scan     		PDF 2SC3267 2SA1297 55MAX. 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: KSC2752 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE TO -126 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector- Base Voltage Characteristic VcBO Symbol 500 V Collector-Emitter Voltage VcEO 400 V Emitter- Base Voltage V ebo


    OCR Scan     		PDF KSC2752 300jis,

    2SA1297

    Abstract: 2SC3267
    Text: TOSHIBA 2SC3267 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3267 Unit in mm PO W ER AM PLIFIER APPLICATIONS PO W ER SWICHING APPLICATIONS 4.2M AX. • • Low Saturation Voltage : VCE (sat) = 0-5V (Max.) @Iq = 2A Complementary to 2SA1297


    OCR Scan     		PDF 2SC3267 2SA1297 961001EAA2' 2SA1297 2SC3267