Untitled
Abstract: No abstract text available
Text: 2SC3910 Power Transistors 2SC3910 Silicon NPN Triple-Diffused Junction Mesa Type Package D im ensions High Speed Sw itching 20.5max. • Features • • • • High speed sw itching High collector-base voltage VCbo W ide area of safety operation (ASO)
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2SC3910
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2SC4152
Abstract: uas 111
Text: Power Transistors 2SC 4152 2SC4152 Silicon NPN Triple-Diffused Planar Type Package D im ensions High Breakdow n Voltage, High Speed Sw itching U n it ! m m • Features 4 .4 m a x . 1 0 .2 m a x • High sp e e d sw itch in g • High c o lle c to r-b a s e v o lta g e
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2SC4152
2SC4152
uas 111
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DARLINGTON TRANSISTOR ARRAYS 2A
Abstract: PNP DARLINGTON ARRAYS 60V transistor npn ic2a DARLINGTON ARRAYS PNP PU4319 6 "transistor arrays" ic "Darlington Transistor" PANASONIC
Text: Power Transistor Arrays PU4319 PU4319 Package D im ensions Silicon NPN/PNP Planar Darlington Type Power A m plifie r, Sw itching • Features • H igh D C c u r re n t gain It f e • High s p e e d sw itch in g • 2 N P N e le m e n ts + 2 P N P e le m e n ts
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PU4319
-20mA
bci32fl52
0017DSS
DARLINGTON TRANSISTOR ARRAYS 2A
PNP DARLINGTON ARRAYS
60V transistor npn ic2a
DARLINGTON ARRAYS PNP
PU4319
6 "transistor arrays" ic
"Darlington Transistor" PANASONIC
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C2833A
Abstract: 2SC2833 2SC2833A 2SC2841 3PES WT-150
Text: PANASONIC INDL/ELEK-CSEHI} 72C D | t,c]32flS4 000^572 □ 3 5 - / 3 2SC2833, 2SC2833A 2SC2833, 2SC2833A > IJ ZJ > N P N = S 3 £ ifc ff 2 /S i N P N Triple Diffused >y 51 v ^ f f l / H i g h Speed Sw itching • ¡tt • ^ /F e a tu r e s X -f 'y -f-> ^ j S * fiiv->0/H ig h speed sw itching
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35-S3
2SC2833,
2SC2833A
2SC2833
10VX0
10VX1A
al00X100X2mm
C2833A
2SC2833A
2SC2841
3PES
WT-150
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PDF
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KD510
Abstract: 2SK319 2SK320
Text: HI T A C H I /{ OPTO EL ECTRO NI CS > "44962Ö5 H I T A C H I / OPTOELECTRONICS! 73 DE I 44c][3205 mOlOOlM - • 73C 10014 D 2SK319,2SK320 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance.
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2SK319
2SK320
449620b'
2SK319,
KD510
2SK320
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749P
Abstract: 2SD1528
Text: P o w e r T ra n s is to rs 2SD1528 2SD1528 Silicon NPN Epitaxial Planar Type Package Dim ensions Power Sw itching 1 0 .5 + 0 .5 • Features 9 .8 m a x. • H igh s p e e d sw itch in g 7.6m in • H igh c o l l e c to r -b a s e v o lta g e V cbo • G o o d lin e a rity o f D C c u r r e n t g ain (Iikf )
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2SD1528
SC-46
220AB
20Uhi
749P
2SD1528
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PDF
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2SD1735
Abstract: No abstract text available
Text: Power Transistors 2SD1735 2SD1735 Silicon PNP Triple-Diffused Planar Type • Package Dimensions Horizontal Deflection Output U n it : mm ■ Features • High breakdow n voltage, high reliability • High speed sw itching • Wide area of safety operation ASO
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2SD1735
100X100X2mm
75kHz
Tc-25Â
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2SC3798
Abstract: 2SC3798A
Text: Power T ransistors 2SC3798, 2SC3798A 2SC3798, 2SC3798A Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching U n it : mm • Features L15.5m ax. 6.9min. • High speed sw itching • High collector-base voltage
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2SC3798,
2SC3798A
2SC3798
dis100
2SC3798A
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2SC3527
Abstract: 41EA pnp 500v
Text: Pow er Transistors b13EñS2 DDlb445 2SC3527 DtT 2SC3527 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching U n it : ' n n • Features 5.2m ax. 15.5max. 6.9min. • High speed sw itching r* • High collector-base voltage
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b13EflS2
DDlb445
2SC3527
D01b4Hb
180wH
DDlb447
2SC3527
41EA
pnp 500v
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2SB1180
Abstract: 2SB1180A 2SD1750 2SD1750A
Text: Power T ransistors 2SB1180, 2SB1180A 2SB1180, 2SB1180A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Medium Speed Power Switching . Complementary Pair with 2SD1750, 2SD1750A • Features ‘ • High DC c u rre n t gain Iif e • High sp eed sw itching
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2SB1180,
2SB1180A
2SD1750,
2SD1750A
2SB1180
2SB1180A
2SD1750
2SD1750A
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IR LFN
Abstract: LFN ir 2SD1320
Text: Power Transistors 2SD1320 2S D 1320 Package Dim ensions U n it ! m m Silicon NPN Triple-D iffused Planar Darlington Type M edium Speed Power Sw itching • Features • 60V Zener diode built-in betw een C and B • Very small fluctuation in breakdown voltages
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2SD1320
IR LFN
LFN ir
2SD1320
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NJ 15 U1 W
Abstract: No abstract text available
Text: Power Transistors 2SD1538, 2SD1538A 2SD1538, 2SD1538A Silicon NPN Epitaxial Planar Type • Package D im ensions Low V oltage Sw itching C om plem enta ry Pair w ith 2SB1070, 2SB1070A U n it I mm ■ Features 8.7 r • Low collector-em itter saturation voltage VcEisao
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2SD1538,
2SD1538A
2SB1070,
2SB1070A
2SD1538
2SD1538A
NJ 15 U1 W
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2SC3508
Abstract: ic003
Text: Power T ransistors 2SC3508 G 0 1 b 4 3 T flbb 2SC3508 Package Dimensions U nit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 5.2max. 1 5 ,5 m a x . 6.9min. High Breakdown Voltage, High Speed Switching 3.2 Epoxy resin • Features • High speed sw itching
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G01b43T
2SC3508
15Duty
001b441
2SC3508
ic003
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Untitled
Abstract: No abstract text available
Text: Power T ransistors 2SC 3975 2SC3975 Silicon NPN Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching U n it ! mm 5.2m ax. • Features o • High sp ee d sw itching 21.0 + 0.5 , (V cbo • Wide area of sa fety operation (ASO)
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2SC3975
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2SD1480
Abstract: lm 738 2SD1517
Text: Power Transistors 2SD1517 2SD1517 Silicon NPN Epitaxial Planar Type Package Dim ensions Power Am plifier, Power Sw itching • Features Unit ! mm 4.4max. 10.2max. 5.7m ax. • Low collector-em itter saturation voltage Vcem K M 2 . 9 max I F • Good linearity of DC cu rren t gain (h ^ )
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2SD1517
2SD1480)
3265S
0Qlb74T
2SD1480
lm 738
2SD1517
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2SC4421
Abstract: V11N TF012
Text: Power Transistors 2SC4421 2SC4421 Silicon NPN Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features • High sp eed sw itching • High collecto r-b a se v o lta g e ' V c b o • Wide area o f sa fety operation (ASO)
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2SC4421
2SC4421
V11N
TF012
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2SD1318
Abstract: No abstract text available
Text: Power Transistors 2SD1318 2SD1318 Package Dim ensions U n it ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7max, 8.7 n Medium Speed Power Sw itching l.lm a x 6.5m ax. r— i • Features • 30V Zener diode built-in between C and B • Very small fluctuation in breakdown voltages
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2SD1318
2SD1318
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1277, 2SD1277A 2SD1277, 2SD1277A Package Dimensions Silicon NPN Triple-Diffused Planar Darlington Type Medium Speed Switching Complementary Pair with 2SB951, 2SB951A • Features • H igh D C c u r r e n t g ain hre • H igh s p e e d sw itc h in g
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2SD1277,
2SD1277A
2SB951,
2SB951A
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PDF
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2SC3797
Abstract: 2SC3797A SC-65
Text: Power T ransistors 2SC3797, 2SC3797A 2SC3797, 2SC3797A Silicon PNP Triple-Diffused Plariar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features • H igh sp e e d sw itc h in g • H igh c o lle c to r-b a s e v o ltag e V cbo
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2SC3797,
2SC3797A-
2SC3797A
2SC3797
2SC3797A
SC-65
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PDF
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2SK1331
Abstract: No abstract text available
Text: P o w er F-MOS FET 2SK1331 2SK1331 Silicon N-Channel Power F-M O S FET Package Dimensions • Features • Low R r d <o„ = 0 .3 8 ii typ.) Unit: mm 5.2max. . 15.5max. 6.9min. • High speed sw itching t f= 100ns (typ.) • Secondary breakdow n free 3.2
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2SK1331
100ns
b132fi52
Q017174
2SK1331
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K2040
Abstract: 2SK807
Text: Power F-MOS FET 2SK807 2SK807 Silicon N-channel Power F-M O S F E T Package Dimensions • Features • Low ON resistan ce Rds on : R ds (on) = 1.1ft (typ.) Unit: mm • High sw itching ra te : tf= 7 0 n s (typ.) 5.2max. 15.5max • No secondary breakdow n
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2SK807
171Q4
K2040
2SK807
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PDF
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2SK770
Abstract: No abstract text available
Text: P ow er F-MOS FET 2SK770 2SK770 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON resistan ce RDs on : RDS (on) = 3 .5 il (typ.) • High sw itching ra te : tf= 3 0 n s (typ.) • No secondary breakdow n • High breakdow n voltage
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2SK770
O-220
VDO-I50V
2SK770
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PDF
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2SD1529
Abstract: No abstract text available
Text: Power Transistors 2SD1529 2S D 1529 Silicon NPN Epitaxial Planar Type • Package D im ensions Power Sw itching ■ Features • High speed switching • High collector-base voltage V cbo • Good linearity of DC cu rre n t gain (htE) • “N T ype” package configuration with a cooling fin for direct soldering
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2SD1529
2SD1529
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2SK996
Abstract: 1128A FET 1127
Text: P o w er F-MOS FET 2SK 996 2SK996 Silicon N-channel Power F-M O S FET Package Dim ensions • Features • Low ON resistan ce R ds on : R d s (on) = 1 .2 ii (typ.) • High sw itching ra te : tf = 60ns (typ.) • No secondary breakdown Unit: mm .10 2rr L4m ax
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2SK996
171BS
001712b
2SK996
1128A
FET 1127
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