SVC6310 Search Results

SVC6310 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SVC6310		Tyco Electronics	25-1000 MHz, GaAs foundry service PROCESS PE3		Original	PDF

SVC6310 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
FE42-0001 Abstract: SVC6310 Text: GaAs Foundry Services PROCESS HI2 HI2 V2.00 Features • Typical RF Performance 0.5 µm MESFET Technology for High Gain/Low Noise Applications MMICs up to 20 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging	Original	PDF	50IDSS 12/18GHz 25IDSS 25GHz 300um FE42-0001 SVC6310
MS2532 Abstract: 15544 FE43-0001 tv lg 37 datasheet FC06 SVC6310 MESFET MULTIWATT die Text: GaAs Foundry Services PROCESS PE3 PE3 V2.00 Features • Typical RF Performance 0.5 µm MBE MESFET Technology for High Power Applications MMICs up to 18 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging •	Original	PDF	6X150) 40IDSS 2/12GHz 680/525mW/mm 20GHz MS2532 15544 FE43-0001 tv lg 37 datasheet FC06 SVC6310 MESFET MULTIWATT die
Untitled Abstract: No abstract text available Text: GaAs Foundry Services PROCESS SI1 SI1 V2.00 Features • • • • • • • Typical RF Performance CKT2 2X100 200 um FET 1.0 \|im Technology for Control Device Applications MMICs up to 20 GHz Two qualified fabrication facilities 100 mm wafer diameter	OCR Scan	PDF	2X100)
Untitled Abstract: No abstract text available Text: GaAs Foundry Services PROCESS PE3 PE3 V2.00 Features • Typical RF Performance FC06 6X150 900 um FET 0.5 \|im MBE MESFET Technology for High Power Applications MMICs up to 18 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging	OCR Scan	PDF	6X150) 2/12GHZ 2/12GHZ 680/525mW/mm 20GHz 900um