2SA1046
Abstract: 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275
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2N6274
2N6275
2N6277
2N6377
2N6277*
POWER32
TIP73B
TIP74
2SA1046
2N6275 equivalent
BU108
TR TIP2955
MOTOROLA 2N6277
BU806 Complement
BU326
BU100
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2SC124
Abstract: BU108 2SA1046 BDX54 2SC102 BC 458 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6436 2N6437 2N6438* High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 80 Vdc (Min) — 2N6436
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2N6436
2N6437
2N6438
2N6338
2N6341
2N6438*
Devi32
TIP73B
2SC124
BU108
2SA1046
BDX54
2SC102
BC 458
BU326
BU100
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Motorola case 77
Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc
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MJE200*
MJE210*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
Motorola case 77
2N3055
BU108
2sc15
bdw93c applications
BU326
BU100
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MJE34 equivalent
Abstract: BU108 2SA1046 2n5882 BDX54 2N5880 BC 107 npn transistor pin configuration 2SB56 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5879 2N5880* Complementary Silicon High-Power Transistors NPN 2N5881 2N5882* . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 60 Vdc (Min) — 2N5879, 2N5881
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2N5879,
2N5881
2N5880,
2N5882
2N5879
2N5880*
2N5882*
TIP73B
TIP74
MJE34 equivalent
BU108
2SA1046
2n5882
BDX54
2N5880
BC 107 npn transistor pin configuration
2SB56
BU326
BU100
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equivalent to tip162
Abstract: 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors 2N6338 2N6339 2N6340 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) — 2N6338
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2N6338
2N6339
2N6340
2N6341
2N6436
Continu32
TIP73B
TIP74
TIP74A
TIP74B
equivalent to tip162
2SA1046
2N3055
BU108
2n6258
BU326
BU100
BD262
buv23
2n5632
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ST T4 3580
Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc
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MJD243*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
ST T4 3580
BU108
bdw93c applications
transistor bd136 in dpak packaging
2SC103
ir411
TRANSISTOR BC 384
BDX54
2SB56
IC 714
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Untitled
Abstract: No abstract text available
Text: , Una, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Darlingtion Power Transistor PMD16K80 DESCRIPTION • High DC current gain • Collector-Emitter Sustaining VoltageVcEO(sus)= SOV(Min)
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PMD16K80
PMD17K80
100mA;
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UZF4115
Abstract: UZF411 A6061-T6 uzfxmr1 UZFXMR2 COPPER C3604 UZFTNB8 UZFTP8 M1021 UZFRV41
Text: UZF41/42/43 series 0.6.10 13:16 Page 1 NEW OPTICAL FIBER DIGITAL/AUTO/MANUAL SETTING TYPE PHOTOELECTRIC SENSORS UZF41/42/43 Series SIMPLE OPERATION WITH INNOVATIVE JOG SWITCH SETTING AND MANUAL SETTING TYPE Simple Operation UZF41/42 series Uses an innovative highly operable jog
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UZF41/42/43
UZF41/42/43
UZF41/42
UZF42
UZF42
UZF43
12-turn
UZF4115
UZF411
A6061-T6
uzfxmr1
UZFXMR2
COPPER C3604
UZFTNB8
UZFTP8
M1021
UZFRV41
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dot matrix printer circuit diagram datasheet
Abstract: HA13408 dot matrix printer Hitachi DSA00231 HA-13408 hitachi feeder
Text: HA13408 9-Channel Power Driver ADE-207-206 Z 1st Edition July 1996 Description The HA13408 9-channel power driver IC is designed to drive dot matrix printer head. This IC can drive 9 pins without using any external components. HA13408 can be used for 2 system four-phase step drive, as
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HA13408
ADE-207-206
HA13408
dot matrix printer circuit diagram datasheet
dot matrix printer
Hitachi DSA00231
HA-13408
hitachi feeder
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4332 transistors
Abstract: D16430
Text: DATA SHEET SILICON POWER TRANSISTORS 2SC4332, 4332-Z NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4332 and 2SC4332-Z are mold power transistors developed PACKAGE DRAWINGS Unit: mm 1.5 −0.1 +0.2 for high-speed switching and features a very low collector-to-emitter
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2SC4332,
4332-Z
2SC4332
2SC4332-Z
4332 transistors
D16430
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CS 213 Polymer protection
Abstract: CS 213 Polymer 39-29-3046 MAX6590 MAX1544 irf 343 so-8 Multimeter tektronix dmm 157 IRF 548 C71-C78 100w amp sanyo
Text: MAXIM 19-2870; Rev 0; 04/03 MAX1544/MAX1545 MAX1544/MAX1545 Evaluation Kits Pentium is a registered trademark of Intel Corp. Hammer is a trademark of Advanced Micro Devices, Inc. QuickPWM is a trademark of Maxim Integrated Products, Inc. Features
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MAX1544/MAX1545
MAX1544/MAX1545
MAX1980
CS 213 Polymer protection
CS 213 Polymer
39-29-3046
MAX6590
MAX1544
irf 343 so-8
Multimeter tektronix dmm 157
IRF 548
C71-C78
100w amp sanyo
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QFS25U
Abstract: 300-500VDC QAS60-50 Airpax relay QAS60 SAR-F-1 QAS60-75 QAS25-50 arc welder inverter 0116 solar
Text: Other Products SAR & SAS Circuit Protectors 280 QAS, QAL, QFS, QFL Quick-Action Fuses 282 HVS & SARPV Compact Switches for 284 Solar Power Applications SAR & SAS Circuit Protectors Applications: Typical applications include tight spaces in radio signal amplifiers for base transceiver stations, uninterruptible power supplies,
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DC24V
24VDC
SARPV-F-40
QFS25U
300-500VDC
QAS60-50
Airpax relay
QAS60
SAR-F-1
QAS60-75
QAS25-50
arc welder inverter
0116 solar
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HKW0820
Abstract: rotary encoder sharp 73 HSW2032-510069 HKW0731-010010 HSW2022-010029 HSW2023-010029 HSW4512-310011 Slide Switch 2p3t HSW2022 hosiden
Text: SWI05 Switches Contents Contents . 1 Slide Switches Notice . 2 Product Lineup . 3
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SWI05
HKW0820
rotary encoder sharp 73
HSW2032-510069
HKW0731-010010
HSW2022-010029
HSW2023-010029
HSW4512-310011
Slide Switch 2p3t
HSW2022
hosiden
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NTE2584
Abstract: npn 10a 800v
Text: NTE2584 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide ASO Range Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
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NTE2584
NTE2584
npn 10a 800v
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Untitled
Abstract: No abstract text available
Text: IBM2520L8767 Preliminary ATM Resource Manager Features other uses DRAM devices. A single array of memory can be used in systems whose sus tained full-duplex total bandwidth requirement is less than 102Mb/s. • Optimized for server applications. • Configurable for sustained performance of up to
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IBM2520L8767
102Mb/s.
400Mb/s
chapt07
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Untitled
Abstract: No abstract text available
Text: IBM2520L8767 IBM Processor for ATM Resources Features pendent: one can use SRAM devices while the other uses DRAM devices. A single array of memory can be used in systems whose sus tained full-duplex total bandwidth requirement is less than 102Mb/s. • Optimized for server applications.
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IBM2520L8767
102Mb/s.
400Mb/s
chapt07
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2n3054
Abstract: RCA transistor 40410 RCA 40310 2n2870 RCA 40636 transistor transistor 40410 ta7719 2n2338 2N2405 2N2147
Text: jo is is u e jj. J 9 M O d .1 1 - <r*#► • 1 - t * « 1 I -tr 14 p i-er 2 1 his edition of the P o w e r T r a n s is to r D ir e c to r y has been completely revised to reflect new An important change in this Directory is in the Index of Types which has been expanded to include
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edi358
TA7557
TA7611
TA7612
TA7639
TA7640
TA7719
TA7739
TA7740
TA7741
2n3054
RCA transistor 40410
RCA 40310
2n2870
RCA 40636 transistor
transistor 40410
ta7719
2n2338
2N2405
2N2147
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TA8724
Abstract: 2N6247 RCA-2N6246 2N6246 2N6248 clare mercury RCA 2N6246 RC 4565 TA7279 TA7280
Text: G E SOLID 3875081 D Ìf| 3 0 7 S 0 Ô1 DÏ STATE G Ë SOL I D ST ATE " _ 01E 17427 DD17 4 5 7 D 7< General-Purpose Power Transistors File N u m b é r 677 2N6246, 2N6247, 2N6248, 2N6469 TERMINAL DESIGNATIONS
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307S0Ã
0D174E7
2N6246,
2N6247,
2N6248,
2N6469
RCA-2N6246,
2N6469
TA8724
2N6247
RCA-2N6246
2N6246
2N6248
clare mercury
RCA 2N6246
RC 4565
TA7279
TA7280
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2N4985
Abstract: 2N2646 cross reference 2N4984 2n2646 equivalent 2N2646 2N4983 2N4991 GE SCR cross reference 2n4992 EQUIVALENT 2N1671
Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can
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2N489-494â
2N2646-47â
GEC32U
10kHz
2N4984
I2N2647
-2n4985
2N4985
2N2646 cross reference
2N4984
2n2646 equivalent
2N2646
2N4983
2N4991
GE SCR cross reference
2n4992
EQUIVALENT 2N1671
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2sc431
Abstract: 2SC1466 2sc146 2SC407 H150 T10M36 T10M40 T13M T30M36 T30M40
Text: POWER TRANSISTORS SHINDENGEN ELECTRIC MF6 •, Jü": M.a DQ Type No. No. VCBO VCEO V ebo [V ] [V ] 150 100 2SC 407 408 409 200 T7M 41OA 300 412 2SC431 ISO 432 433 T13M 200 434A 300 436 450 360 1467 T 3 M 40 500 400 1468 T10M 36 450 360 T10M 40 500 1469A T30M 36
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2n307
2SC407
2SC2126A
T3M20
T10M20
T30M20
2SC3703
T30R20
02QHAX
2-04M
2sc431
2SC1466
2sc146
2SC407
H150
T10M36
T10M40
T13M
T30M36
T30M40
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MJE520
Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
Text: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic
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-204AA
-204AE
T0-204A
97A-02
O-205AD
BUS51
BUV21
BUV11
2N6249
BUX41
MJE520
bd189
sc 6038
MJE12007
MOTOROLA 527 33A
mj4647
mje13006
BD 433NPNTO-126
Je105
mps-u
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tic 1260 scr texas
Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Text: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.
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ked2
Abstract: No abstract text available
Text: POIilEREX INC m M U iE K 31E J> • TE^MbSl b W M PRX DGQM3bb KED235A1 - Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 .
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KED235A1
BP107,
Amperes/500
ked2
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IR 436
Abstract: bf 434 amplificateur FT 434 512-BD deflexion vertical tv deflexion BD436
Text: BD 434 BD 436 PNP SILICON TRANSISTORS, EPITAXIAL BASE TRANSISTORS S IL IC IU M PNP, BASE E P ITAXIES Compì, of BD 433, 435 PR E LIM IN A R Y DATA N O TICE P R E LIM IN A IR E These transistors are intended for complemen tary or quasi complementary symetry ampli
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