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    SURFACE MOUNT TRANSISTOR A66 Search Results

    SURFACE MOUNT TRANSISTOR A66 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SURFACE MOUNT TRANSISTOR A66 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Cascadable Amplifier 10 to 1000 MHz A66-1/ SMA66-1 V3 Features • • • • Product Image HIGH GAIN - TWO STAGES: 27.5 dB TYP. LOW NOISE: <3.0 dB (TYP.) HIGH POWER OUTPUT: 15.0 dBm (TYP.) WIDE POWER SUPLLY RANGE: 5 TO 15 VOLTS Description The A66-1 RF amplifier is a discrete hybrid design, which uses


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    PDF A66-1/ SMA66-1 A66-1 MIL-STD-883

    Untitled

    Abstract: No abstract text available
    Text: Cascadable Amplifier 10 to 1200 MHz A66/ SMA66 V3 Features • • • • Product Image HIGH GAIN - TWO STAGES: 23.5 dB TYP. LOW NOISE: <3.8 dB (TYP.) HIGH OUTPUT LEVEL:+15.0 dBm (TYP.) WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS Description The A66 RF amplifier is a discrete hybrid design, which uses


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    PDF SMA66 MIL-STD-883 SMA66

    Untitled

    Abstract: No abstract text available
    Text: Cascadable Amplifier 10 to 1000 MHz A66-3/ SMA66-3 V3 Features Product Image • HIGH GAIN - TWO STAGES: 26.0 dB TYP. • LOW NOISE: <3.0 dB (TYP.) • HIGH EFFICIENCY: 16 mA (TYP.) AT 5 VOLTS Description The A66-3 RF amplifier is a discrete hybrid design, which uses


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    PDF A66-3/ SMA66-3 A66-3 MIL-STD-883 SMA66-3 CA66-3

    A66-3

    Abstract: surface mount transistor A66 TRANSISTOR A66 CA66-3 SMA66-3 ca663
    Text: A66-3 / SMA66-3 Cascadable Amplifier 10 to 1000 MHz Rev. V3 Features Product Image • HIGH GAIN - TWO STAGES: 26.0 dB TYP. • LOW NOISE: <3.0 dB (TYP.) • HIGH EFFICIENCY: 16 mA (TYP.) AT 5 VOLTS Description The A66-3 RF amplifier is a discrete hybrid design, which uses


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    PDF A66-3 SMA66-3 MIL-STD-883 A66-3 surface mount transistor A66 TRANSISTOR A66 CA66-3 SMA66-3 ca663

    TRANSISTOR A66

    Abstract: CA66 SMA66
    Text: A66 / SMA66 Cascadable Amplifier 10 to 1200 MHz Rev. V3 Features • • • • Product Image HIGH GAIN - TWO STAGES: 23.5 dB TYP. LOW NOISE: <3.8 dB (TYP.) HIGH OUTPUT LEVEL:+15.0 dBm (TYP.) WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS Description The A66 RF amplifier is a discrete hybrid design, which uses


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    PDF SMA66 MIL-STD-883 TRANSISTOR A66 CA66 SMA66

    TRANSISTOR A66

    Abstract: CA66-1 A66-1 SMA66-1 power suplly surface mount transistor A66 A661 TRANSISTOR CA66
    Text: A66-1 / SMA66-1 Cascadable Amplifier 10 to 1000 MHz Rev. V3 Features • • • • Product Image HIGH GAIN - TWO STAGES: 27.5 dB TYP. LOW NOISE: <3.0 dB (TYP.) HIGH POWER OUTPUT: 15.0 dBm (TYP.) WIDE POWER SUPLLY RANGE: 5 TO 15 VOLTS Description The A66-1 RF amplifier is a discrete hybrid design, which uses


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    PDF A66-1 SMA66-1 MIL-STD-883 TRANSISTOR A66 CA66-1 SMA66-1 power suplly surface mount transistor A66 A661 TRANSISTOR CA66

    A66-3

    Abstract: CA66-3 SMA66-3
    Text: A66-3/SMA66-3 10 TO 1000 MHz CASCADABLE AMPLIFIER • HIGH GAIN - TWO STAGES: 26.0 dB TYP. · LOW NOISE: <3.0 dB (TYP.) · HIGH EFFICIENCY: 16 mA (TYP.) AT 5 VOLTS Typical Performance @ 25°C Specifications (Rev. Date: 6/01)* Characteristics Typical Frequency


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    PDF A66-3/SMA66-3 A66-3 SMA66-3 CA66-3 A66-3 CA66-3 SMA66-3

    Untitled

    Abstract: No abstract text available
    Text: A66-3/SMA66-3 10 TO 1000 MHz CASCADABLE AMPLIFIER • HIGH GAIN - TWO STAGES: 26.0 dB TYP. · LOW NOISE: <3.0 dB (TYP.) · HIGH EFFICIENCY: 16 mA (TYP.) AT 5 VOLTS Typical Performance @ 25°C Specifications (Rev. Date: 6/01)* Characteristics Typical Frequency


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    PDF A66-3/SMA66-3 A66-3 SMA66-3 CA66-3

    CA66

    Abstract: SMA66
    Text: A66/SMA66 10 TO 1200 MHz CASCADABLE AMPLIFIER • HIGH GAIN - TWO STAGES: 23.5 dB TYP. · LOW NOISE: <3.8 dB (TYP.) · HIGH OUTPUT LEVEL: +15.0 dBm (TYP.) · WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS Typical Performance @ 25°C Specifications (Rev. Date: 11/00)*


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    PDF A66/SMA66 SMA66 CA66 SMA66

    CA66

    Abstract: SMA66
    Text: A66/SMA66 10 TO 1200 MHz CASCADABLE AMPLIFIER • HIGH GAIN - TWO STAGES: 23.5 dB TYP. · LOW NOISE: <3.8 dB (TYP.) · HIGH OUTPUT LEVEL: +15.0 dBm (TYP.) · WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS Typical Performance @ 25°C Specifications (Rev. Date: 1/02)*


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    PDF A66/SMA66 SMA66 CA66 SMA66

    A66-1

    Abstract: CA66-1 SMA66-1
    Text: A66-1/SMA66-1 10 TO 1000 MHz CASCADABLE AMPLIFIER • HIGH GAIN-TWO STAGES: 27.5 dB TYP. · LOW NOISE: <3.0 dB (TYP.) · HIGH POWER OUTPUT: 15.0 dBm (TYP.) · WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS Typical Performance @ 25°C Specifications (Rev. Date: 1/01)*


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    PDF A66-1/SMA66-1 A66-1 SMA66-1 CA66-1 A66-1 CA66-1 SMA66-1

    Untitled

    Abstract: No abstract text available
    Text: A66-1/SMA66-1 10 TO 1000 MHz CASCADABLE AMPLIFIER • HIGH GAIN-TWO STAGES: 27.5 dB TYP. · LOW NOISE: <3.0 dB (TYP.) · HIGH POWER OUTPUT: 15.0 dBm (TYP.) · WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS Typical Performance @ 25°C Specifications (Rev. Date: 1/01)*


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    PDF A66-1/SMA66-1 A66-1 SMA66-1 CA66-1

    transistor manual book FREE

    Abstract: transistor book FREE E3Z-T67 E3Z-R86 E3Z-L61 Fork sensor E3Z-LS61 E3Z-G61
    Text: F502-EN2-04.book Seite 43 Dienstag, 26. Juli 2005 5:48 17 General purpose sensors in compact plastic housing E3Z E3Z • Compact housing size and high power LED for excellent performance-size ratio • IP67 and IP69k for highest protection in wet environments


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    PDF F502-EN2-04 IP69k SUS301) E39-S65D E39-S65E E39-S65F transistor manual book FREE transistor book FREE E3Z-T67 E3Z-R86 E3Z-L61 Fork sensor E3Z-LS61 E3Z-G61

    MAAM-008863

    Abstract: MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer
    Text: Corporate Headquarters Richardson Electronics 40W267 Keslinger Road P.O. Box 393 LaFox, IL USA 60147-0393 Phone: 1 800 737-6937 630-208-3637 Fax: (630) 208-2550 Internet: www.rell.com Email: Canada Brampton, Ontario Torod, Norway 1 (800) 737-6937 Latin America


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    PDF 40W267 MAAM-008863 MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer

    smr-3822

    Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
    Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM


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    PDF Jun08 smr-3822 x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter

    M38UC

    Abstract: Stellex M38UC SM4T mixer M38UC-150 a56 transistor 952 STELLEX SFD25 M38DC-400 transistor MY51 transistor MY52 M38UC-400
    Text: M/A-COM, Inc. 1011 Pawtucket Blvd. Lowell, MA 01853-3295 RF and Microwave Products North America MSBU Component Operations Tel: 800.366.2266 Fax: 800.618.8883 Europe/Africa/Middle East Tel: 44.1344.869.595 Fax: 44.1344.300.020 Asia/Pacific Tel: 81.44.844.8296


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    PDF MA-C-05010007 M38UC Stellex M38UC SM4T mixer M38UC-150 a56 transistor 952 STELLEX SFD25 M38DC-400 transistor MY51 transistor MY52 M38UC-400

    Omron H3BA

    Abstract: smd transistor A6t omron relay 12VDC, IEC255 omron h3ba timer smd a6t double diode smd transistor A6a h3ba 5 pin relay 12vdc 4088 cross reference capillary rotary compressor RELAY OMRON LZN 203
    Text: 2005 Components Catalogue Text 2005 Catalogue 1 Contents Welcome to the 2005 Omron Catalogue Section 1 – POWER RELAYS 8-9 10 - 168 Technical Information – Power & Signal Relays 10 - 31 Selection Guide 32 - 43 G5B 44 - 47 G5NB-E 48 - 51 G5SB 52 - 55 G6M


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    PDF S-164 OCB003 Omron H3BA smd transistor A6t omron relay 12VDC, IEC255 omron h3ba timer smd a6t double diode smd transistor A6a h3ba 5 pin relay 12vdc 4088 cross reference capillary rotary compressor RELAY OMRON LZN 203

    ATIC 164 D2

    Abstract: WJ-A66 WJ-CA66
    Text: uuU A66-3 / SMA66-3 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 26.0 dB TYP. LOW NOISE: <3.0 dB (TYP.) HIGH EFFICIENCY: 16 mA (TYP.) AT 5 VOLTS Outline Drawings Specifications* Characteristics


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    PDF A66-3 SMA66-3 A66-3 1-800-WJ1 ATIC 164 D2 WJ-A66 WJ-CA66

    WJ-A66

    Abstract: WJA66
    Text: WJ-A66-3 / SMA66-3 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 26.0 dB TYP. LOW NOISE: < 3.0 dB (TYP.) HIGH EFFICIENCY: 16 mA (TYP.) AT 5 VOLTS Outline Drawings Specifications* Characteristics


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    PDF WJ-A66-3 SMA66-3 60-ohm WJ-CA66-3 WJ-A66 WJA66

    Wja66

    Abstract: No abstract text available
    Text: uud A66-1 / SMA66-1 10 to 1000 MHz TO-8 GASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - TWO STAGES: 27.5 dB TYP. LOW NOISE: <3.0 dB (TYP.) HIGH POWER OUTPUT: 15.0 dBm (TYP.) WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS Outline Drawings


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    PDF A66-1 SMA66-1 A66-1 1-800-WJ1-4401 Wja66

    Wja66

    Abstract: No abstract text available
    Text: WJ-A66 / SMA66 10 to 1200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 23.5 dB TYP. LOW NOISE: 4.0 dB (TYP.) HIGH OUTPUT LEVEL: +15 dBm (TYP.) ULTRA LOW PHASE DEVIATION FROM LINEARITY: < ±2°, 100 -1000 MHz


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    PDF WJ-A66 SMA66 50-ohm Wja66

    transistor BC 157

    Abstract: 13000 transistor TO-220
    Text: u u U A66 / SMA66 10 to 1200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 23.5 dB TYP. LOW NOISE: <3.8 dB (TYP.) HIGH OUTPUT LEVEL: +15.0 dBm (TYP.) WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS Outline Drawings


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    PDF SMA66 1-800-WJ1-4401 transistor BC 157 13000 transistor TO-220

    rc Snubber circuits theory, design and application

    Abstract: step-down converter 6pin step-down DC-DC converter ICs 3df s 45 RC 4565
    Text: Power Conversion ICs TK65020 STEP-UP VOLTAGE CONVERTER FEATURES APPLICATIONS • Guaranteed 0.9 V Operation ■ Battery Powered Systems ■ Very Low Quiescent Current ■ Cellular Telephones ■ Internal Bandgap Reference ■ Pagers ■ High Efficiency MOS Switching


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    PDF TK65020 TK65020 rc Snubber circuits theory, design and application step-down converter 6pin step-down DC-DC converter ICs 3df s 45 RC 4565

    SMA66-1

    Abstract: No abstract text available
    Text: W J - A 6 6 - 1 / S M A 6 6 - 1 10 to 1000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - TWO STAGES: 27.5 dB TYP. LOW NOISE: < 3.0 dB (TYP.) HIGH POWER OUTPUT: 15.0 dBm (TYP.) WIDE POWER SUPPLY RANGE: 5 VOLTS TO 15 VOLTS


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    PDF A66-1 Compre27 DQ71D3 SMA66-1