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    Text: SUN02A60F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =3.9Ω (Typ.)  Low gate charge: Qg=7.5nC (Typ.)  Low reverse transfer capacitance: Crss=5pF (Typ.)  Lower EMI noise  RoHS compliant device


    Original     		SUN02A60F SUN02A60 O-220F-3L SDB20D45 10-JUL-14 KSD-T0O160-000 PDF