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Vishay BLH SUB75N06-08-E3
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Bristol Electronics	SUB75N06-08-E3		105		2	1 - 10 $2.688 100 $1.2545 1000 $1.2545 10000 $1.2545	Buy Now
Vishay Siliconix SUB75N06-08
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Bristol Electronics	SUB75N06-08		95			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SUB75N06-08		76			1 $3.72 10 $3.72 100 $1.86 1000 $1.86 10000 $1.86	Buy Now
Vishay Intertechnologies SUB75N06-08-E3
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Quest Components	SUB75N06-08-E3		84			1 $3.6 10 $2.4 100 $1.8 1000 $1.8 10000 $1.8	Buy Now

SUB75N06 Datasheets (11)

Part	Manufacturer	Description	Datasheet Type	PDF
SUB75N06-07L	Vishay Intertechnology	N-Channel 60-V (D-S) 175°C MOSFET	Original	PDF
SUB75N06-07L-E3	Vishay	Transistor Mosfet N-CH 60V 75A 3TO-263	Original	PDF
SUB75N06-07L SPICE Device Model	Vishay	N-Channel 60-V (D-S), 175°C MOSFET	Original	PDF
SUB75N06-08	Temic Semiconductors	N-Channel Enhancement-Mode Transistors	Original	PDF
SUB75N06-08	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
SUB75N06-08	Vishay Intertechnology	N-Channel 60-V (D-S), 175°C MOSFET	Original	PDF
SUB75N06-08-E3	Vishay	Transistor Mosfet N-CH 60V 75A 3TO-263	Original	PDF
SUB75N06-08 SPICE Device Model	Vishay	N-Channel 60-V (D-S) 175°C MOSFET	Original	PDF
SUB75N06-12L	Vishay Intertechnology	N-Channel 60-V (D-S), 175°C MOSFET	Original	PDF
SUB75N06-12L-E3	Vishay	Transistor Mosfet N-CH 60V 75A 3TO-263	Original	PDF
SUB75N06-12L SPICE Device Model	Vishay	N-Channel Enhancement-Mode Transistor, Logic Level	Original	PDF

SUB75N06 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
mosfet 4800 Abstract: SUB75N06-08 Text: SPICE Device Model SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUP/SUB75N06-08 S-71502Rev. 06-Aug-07 mosfet 4800 SUB75N06-08	PDF
SUB75N06-07L Abstract: SUB75N06-07L-E3 SUP75N06-07L SUP75N06-07L-E3 Text: SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) ID (A) 0.0075 at VGS = 10 V 75 0.0085 at VGS = 4.5 V • 175 °C Rated Maximum Junction Temperature Available RoHS* a COMPLIANT TO-220AB	Original	SUP/SUB75N06-07L O-220AB O-263 SUB75N06-07L SUP75N06-07L O-263) SUB75N06-07L-E3 O-263, SUB75N06-07L SUB75N06-07L-E3 SUP75N06-07L SUP75N06-07L-E3	PDF
SUB75N06-06 Abstract: SUP75N06-06 Text: SUP/SUB75N06-06 New Product Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V 60 "75 a 0.008 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-06 Top View	Original	SUP/SUB75N06-06 O-220AB O-263 SUB75N06-06 SUP75N06-06 18-Jul-08 SUB75N06-06 SUP75N06-06	PDF
SUB75N06-07L Abstract: 771a Text: SPICE Device Model SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUP/SUB75N06-07L S-71501Rev. 06-Aug-07 SUB75N06-07L 771a	PDF
SUB75N06-07L Abstract: SUP75N06-07L Text: SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 75a 60 0.0085 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-07L Top View N-Channel MOSFET	Original	SUP/SUB75N06-07L O-220AB O-263 SUB75N06-07L SUP75N06-07L O-263 S-05111--Rev. 10-Dec-00 SUB75N06-07L SUP75N06-07L	PDF
SUB75N06-08 Abstract: SUP75N06-08 Text: SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View SUP75N06-08 N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)	Original	SUP/SUB75N06-08 O-220AB O-263 SUB75N06-08 SUP75N06-08 O-220AB O-263) O-263 S-47969--Rev. 08-Jul-96 SUB75N06-08 SUP75N06-08	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model SUP/SUB75N06-12L Vishay Siliconix N-Channel Enhancement-Mode Transistor, Logic Level CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUP/SUB75N06-12L 18-Jul-08	PDF
sup75n06-08 datasheet Abstract: SUB75N06-08 SUP75N06-08 Text: SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View N-Channel MOSFET SUP75N06-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)	Original	SUP/SUB75N06-08 O-220AB O-263 SUB75N06-08 SUP75N06-08 O-220AB O-263) 18-Jul-08 sup75n06-08 datasheet SUB75N06-08 SUP75N06-08	PDF
SUP/SUB75N06-07L Abstract: No abstract text available Text: SPICE Device Model SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUP/SUB75N06-07L 18-Jul-08 SUP/SUB75N06-07L	PDF
SUB75N06-08 Abstract: No abstract text available Text: SPICE Device Model SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUP/SUB75N06-08 18-Jul-08 SUB75N06-08	PDF
SUB75N06-08 Abstract: SUP75N06-08 Text: SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View N-Channel MOSFET SUP75N06-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)	Original	SUP/SUB75N06-08 O-220AB O-263 SUB75N06-08 SUP75N06-08 O-220AB O-263) S-05111--Rev. 10-Dec-01 SUB75N06-08 SUP75N06-08	PDF
SUB75N06-07L Abstract: SUP75N06-07L 70776 Text: SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 75a 60 0.0085 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-07L Top View N-Channel MOSFET	Original	SUP/SUB75N06-07L O-220AB O-263 SUB75N06-07L SUP75N06-07L O-263 08-Apr-05 SUB75N06-07L SUP75N06-07L 70776	PDF
SUP75N06-08 Abstract: SUB75N06-08 Text: SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View SUP75N06-08 N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)	Original	SUP/SUB75N06-08 O-220AB O-263 SUB75N06-08 SUP75N06-08 O-220AB O-263) O-263 S-47969--Rev. 08-Jul-96 SUP75N06-08 SUB75N06-08	PDF
SUB75N06-12L Abstract: SUP75N06-12L Text: SUP/SUB75N06-12L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 75 0.014 @ VGS = 4.5 V 70 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-12L Top View N-Channel MOSFET	Original	SUP/SUB75N06-12L O-220AB O-263 SUB75N06-12L SUP75N06-12L S-59182--Rev. 07-Sep-98 SUB75N06-12L SUP75N06-12L	PDF

SUB75N06-08 Abstract: No abstract text available Text: SPICE Device Model SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUP/SUB75N06-08 0-to10V 15-Apr-02 SUB75N06-08	PDF
Untitled Abstract: No abstract text available Text: SUP/SUB75N06-12L Siliconix N-Channel 60-V D-S , 175_C MOSFET New Product PRODUCT SUMMARY V(BR)DSS (V) 60 RDS(ON) (W) ID (A) 0.012 @ VGS = 10 V 75 0.014 @ VGS = 4.5 V 70 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-12L Top View	Original	SUP/SUB75N06-12L O-220AB O-263 SUP75N06-12L SUB75N06-12L O-263) O-263 S-59182--Rev. 07-Sep-98	PDF
Untitled Abstract: No abstract text available Text: SUP/SUB75N06-06 New Product Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V 60 "75 a 0.008 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-06 Top View	Original	SUP/SUB75N06-06 O-220AB O-263 SUP75N06-06 SUB75N06-06 O-220AB O-263) O-263 08-Apr-05	PDF
Untitled Abstract: No abstract text available Text: SUP/SUB75N06Ć08 Siliconix NĆChannel EnhancementĆMode Transistors 175_C Maximum Junction Temperature Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S S SUB75N06Ć08 Top View SUP75N06Ć08	Original	SUP/SUB75N0608 O220AB SUB75N0608 SUP75N0608 O220AB S-44639--Rev.	PDF
a2826 Abstract: No abstract text available Text: Tem ic SUP/SUB75NÖ6-08 Siliconix N-Channel Enhancement-Mode Transistors 175 °C Maximum Junction Temperature Product Summary TO-220AB o TO-263 It h ;O D R A IN connected to TAB ~TT G D S Top View G D S SUB75N06-08 Top View SUP75N06-08 N-Channel M OSFET Absolute Maximum Ratings Tc = 25 °C Unless Otherwise Noted	OCR Scan	SUP/SUB75N O-220AB O-263 SUB75N06-08 SUP75N06-08 -220AB O-263) S-44639-- SUP/SUB75N06-08 a2826	PDF
Untitled Abstract: No abstract text available Text: SUP/SUB75N06-07L S ilic o n ix N-Channel Enhancement-Mode Transistors Product Summary I d A rDS(on) (ß ) 0.0075 @ VGS = 10 V V(BR)DSS 60 75a 0.0085 @ VGS = 4.5 V D Q TO-220AB o TO-263 t 1 0— DRAIN connected to TAB l! TPT Top View SUB75N06-07L GD S Top View	OCR Scan	SUP/SUB75N06-07L O-220AB SUP75N06-07L O-263 SUB75N06-07L T0-220AB O-263) O-263 S-56920--Rev. 23-Mar-98	PDF
7553a Abstract: No abstract text available Text: SUP/SUB75N06-12L VISHAY Siliconix T N-Channel 60-V D-S , 175°C MOSFET New Product PRODUCT SUMMARY r DS(ON) V (BR)DSS (V) •d (A) (-2) 0.012 @ VGS = 10 V 75 0.014 @ V GS= 4.5 V 70 60 D O TO-220AB o TO-263 < DRAIN connected to TAB 1 IPT G D S Top View Ô	OCR Scan	SUP/SUB75N06-12L O-220AB O-263 SUP75N06-12L SUB75N06-12L S-59182-- 07-Sep-98 7553a	PDF
GS 069 LF Abstract: SUB75N06-06 Text: SUP/SUB75N06-06 VISHAY Vishay Siliconix New Product N-Channel 60-V D-S , 175°C MOSFET PRODUCT SUMMARY V(BR)DSS (V ) r DS(on) ( ) (A) Id 0.0065 @ V GS = 10 V 60 ±75 a 0.008 @ VGS = 4.5 V D TO-220AB Q o TO-263 r 1 J l D RAIN connected to TAB iptt G D S Top V iew	OCR Scan	SUP/SUB75N06-06 O-220AB O-263 S-60938-- 26-Apr-99 GS 069 LF SUB75N06-06	PDF
Untitled Abstract: No abstract text available Text: SUP/SUB75N06-07L N-Channel Enhancement-Mode Transistors Product Summary I d A rDS(on) (ß ) 0.0075 @ VGS = 10 V 0.0085 @ VGS = 4.5 V V(BR)DSS 60 75a D Q TO-220AB o TO-263 t Jl 1 in r DRAIN connected to TAB Top View SUB75N06-07L GD S Top View SUP75N06-07L	OCR Scan	SUP/SUB75N06-07L O-220AB SUP75N06-07L O-263 SUB75N06-07L T0-220AB O-263) O-263 S-56920--Rev. 23-Mar-98	PDF
FDS 4800 Abstract: No abstract text available Text: Tem ic SUP/SUB75N06-08 S e m i c o n d u c t o r s N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V ) r DS(on) (£2) I d (A ) 60 0.008 75a D O T O -220A B o T O -263 r 1 Jl DRAIN connected to TAB G D S Top View G D S o s SUB75N06-08 Top View	OCR Scan	SUP/SUB75N06-08 -220A SUP75N06-08 SUB75N06-08 O-263) S-47969--Rev. 08-M-96 FDS 4800	PDF

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SUB75N06 Datasheets (11)

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