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STMicroelectronics STRH100N10HY1 Trans MOSFET N-CH 100V 48A 3-Pin TO-254AA Carrier T/R - Bulk (Alt: STRH100N10HY1)
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Avnet Americas	STRH100N10HY1	Bulk			10	1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics STRH100N10HYG Trans MOSFET N-CH 100V 48A 3-Pin TO-254AA Carrier T/R - Bulk (Alt: STRH100N10HYG)
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Avnet Americas	STRH100N10HYG	Bulk			10	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	STRH100N10HYG					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	STRH100N10HYG			17 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STRH100N10HYT Trans MOSFET N-CH 100V 48A 3-Pin TO-254AA T/R - Bulk (Alt: STRH100N10HYT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	STRH100N10HYT	Bulk			10	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	STRH100N10HYT					1 - 10 - 100 - 1000 - 10000 -	Get Quote

STRH100N10 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MIL-STD-750E Abstract: STRH100N10 STRH100N10FSY1 Text: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ Single event effect (SEE) hardened	Original	PDF	STRH100N10 O-254AA MIL-STD-750E STRH100N10 STRH100N10FSY1
Untitled Abstract: No abstract text available Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 48 A 30 mΩ 135 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID TO-254AA • SEE radiation hardened	Original	PDF	STRH100N10 O-254AA SC30150 DocID17486
STRH100N10FSY3 Abstract: STRH100N10FSY1 Text: STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH100N10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight	Original	PDF	STRH100N10FSY3 O-254AA 100kRad 34Mev/cm STRH100N10FSY3 STRH100N10FSY1
Untitled Abstract: No abstract text available Text: STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH100N10FSY3 100V • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization	Original	PDF	STRH100N10FSY3 O-254AA O-254AA
Untitled Abstract: No abstract text available Text: STRH100N10FSY1 STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH100N10FSY1 100 V STRH100N10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge	Original	PDF	STRH100N10FSY1 STRH100N10FSY3 O-254AA 34Mev/cm O-254AA
STRH100N10FSY1 Abstract: STRH100N10FSY3 STRH100N10 JESD97 Text: STRH100N10FSY1 STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH100N10FSY1 100 V STRH100N10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge	Original	PDF	STRH100N10FSY1 STRH100N10FSY3 O-254AA 34Mev/cm STRH100N10FSY1 STRH100N10FSY3 STRH100N10 JESD97
Doc ID 17486 Rev 7 Abstract: No abstract text available Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite	Original	PDF	STRH100N10 O-254AA STRH100N10HY1 STRH100N1 Doc ID 17486 Rev 7
STRH100N10 Abstract: STRH100N STRH100N10FSY1 MIL-STD-750E DSASW003741 Doc ID 17486 Rev 4 STRH100N10FSY01 Text: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened	Original	PDF	STRH100N10 O-254AA STRH100y STRH100N10 STRH100N STRH100N10FSY1 MIL-STD-750E DSASW003741 Doc ID 17486 Rev 4 STRH100N10FSY01
Untitled Abstract: No abstract text available Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID TO-254AA • SEE radiation hardened	Original	PDF	STRH100N10 O-254AA SC30150 DocID17486
st 72a Abstract: No abstract text available Text: STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH100N10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge	Original	PDF	STRH100N10FSY3 O-254AA 100kRad 34Mev/cm O-254AA st 72a
Untitled Abstract: No abstract text available Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite	Original	PDF	STRH100N10 O-254AA STRH100N10HY1 STRH100N10HY01
Untitled Abstract: No abstract text available Text: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ Single event effect (SEE) hardened	Original	PDF	STRH100N10 O-254AA O-254AA
STRH100N10H Abstract: vd 5205 Text: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite	Original	PDF	STRH100N10 O-254AA STRH100N10HY1 STRH100N1 STRH100N10H vd 5205