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    STP9 Price and Stock

    STMicroelectronics STP9NK70ZFP

    MOSFET N-CH 700V 7.5A TO220FP
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    Mouser Electronics STP9NK70ZFP 495
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    STMicroelectronics STP9NK70ZFP 495 1
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    STMicroelectronics STP9NK90Z

    MOSFET N-CH 900V 8A TO220AB
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    Mouser Electronics STP9NK90Z 2,093
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    STP9NK90Z 396 6
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    Arrow Electronics STP9NK90Z 4,055 13 Weeks 1
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    STMicroelectronics STP9NK90Z 2,087 1
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    Bristol Electronics STP9NK90Z 43
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    STMicroelectronics STP9N65M2

    MOSFET N-CH 650V 5A TO220
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    DigiKey STP9N65M2 Tube 963 1
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    Mouser Electronics STP9N65M2 923
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    STMicroelectronics STP9N65M2 923 1
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    STMicroelectronics STP90NF03L

    MOSFET N-CH 30V 90A TO220AB
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    DigiKey STP90NF03L Tube 897 1
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    STMicroelectronics STP90N6F6

    MOSFET N-CH 60V 84A TO220
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    DigiKey STP90N6F6 Tube 842 1
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    STP9 Datasheets (83)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STP90N4F3 STMicroelectronics N-channel 40 V, 5.4 mO, 80 A, DPAK, TO-220, IPAK, I2PAK STripFET Power MOSFET Original PDF
    STP90N4F3 STMicroelectronics N-channel 40V - 5.4m Ohm - 80A - DPAK - TO-220 - IPAK STripFET Power MOSFET Original PDF
    STP90N55F4 STMicroelectronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 90A TO220 Original PDF
    STP90N6F6 STMicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 84A TO-220AB Original PDF
    STP90NF03L STMicroelectronics N-CHANNEL 30V 0.0056 ? 90A TO-220-I2PAK LOW GATE CHARGE STRIPFET POWER MOSFET Original PDF
    STP90NF03L STMicroelectronics N-channel 30V - 0.0056 Ohm -90A TO-220/I2PAK Low gate charge STripFET Power MOSFET Original PDF
    STP90NF03L STMicroelectronics N-Channel 30 V - 0.0056 ohm - 90 A TO-220 Low Gate Charge STripFET Power MOSFET Original PDF
    STP90NS04ZC STMicroelectronics N-channel clamped 5m Ohm - 80A TO-220 - Fully protected SAFeFET Power MOSFET Original PDF
    STP95N04 STMicroelectronics N-CHANNEL 40V - 5.4mohm - 80A - DPAK - TO-220 STripFET Power MOSFET Original PDF
    STP95N2LH5 STMicroelectronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 80A TO-220 Original PDF
    STP95N3LLH6 STMicroelectronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 80A TO-220 Original PDF
    STP95N4F3 STMicroelectronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 80A TO-220 Original PDF
    STP95N4F3 STMicroelectronics N-channel 40V - 5.4mOHM - 80A - DPAK - TO-220 - IPAK STripFET TM Power MOSFET Original PDF
    STP95NF03 STMicroelectronics N-CHANNEL 30V - 0.0065 ? - 95A D2PAK-TO-220-I2P Original PDF
    STP9N30 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP9N60M2 STMicroelectronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 5.5A TO-220 Original PDF
    STP9N65M2 STMicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 5A TO-220AB Original PDF
    STP9N80K5 STMicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 800V 7A TO220 Original PDF
    STP9NA50 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STP9NA50 STMicroelectronics N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR Original PDF

    STP9 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STP9NC65

    Abstract: STP9NC65FP
    Text: STP9NC65 STP9NC65FP N-CHANNEL 650V - 0.75Ω - 8A TO-220/TO-220FP PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP9NC65 650 V < 0.90 Ω 8A STP9NC65FP 650 V < 0.90 Ω 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


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    PDF STP9NC65 STP9NC65FP O-220/TO-220FP O-220 O-220FP STP9NC65 STP9NC65FP

    Untitled

    Abstract: No abstract text available
    Text: STP90N6F6 N-channel 60 V, 0.0059 Ω typ., 84 A STripFET VI DeepGATE™ Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS on max. ID PTOT STP90N6F6 60 V 0.0068 Ω 84 A 136 W •     Figure 1: Internal schematic diagram


    Original
    PDF STP90N6F6 O-220 DocID025190

    STP9NC60

    Abstract: STP9NC60FP
    Text: STP9NC60 STP9NC60FP N-CHANNEL 600V - 0.6Ω - 9A - TO-220/TO-220FP PowerMesh II MOSFET TYPE STP9NC60 STP9NC60FP • ■ ■ ■ ■ VDSS RDS on ID 600 V 600 V < 0.75 Ω < 0.75 Ω 9.0 A 9.0 A (*) TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY


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    PDF STP9NC60 STP9NC60FP O-220/TO-220FP O-220 O-220FP STP9NC60 STP9NC60FP

    95N3LLH6

    Abstract: 95n3l STP95N3LLH6 STB95N3LLH6 STD95N3LLH6 152-28 15228 STD95N3L
    Text: STB95N3LLH6, STD95N3LLH6 STP95N3LLH6, STU95N3LLH6 N-channel 30 V, 0.0037 Ω , 80 A, D2PAK, DPAK, IPAK, TO-220 STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID 30 V 0.0042 Ω STD95N3LLH6 30 V 0.0042 Ω 80 A STP95N3LLH6 30 V 0.0042 Ω


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    PDF STB95N3LLH6, STD95N3LLH6 STP95N3LLH6, STU95N3LLH6 O-220 STP95N3LLH6 STB95N3LLH6 95N3LLH6 95n3l STP95N3LLH6 STB95N3LLH6 STD95N3LLH6 152-28 15228 STD95N3L

    STD90N4F3

    Abstract: STI90N4F3 STP90N4F3 STU90N4F3
    Text: STD90N4F3, STI90N4F3 STP90N4F3, STU90N4F3 N-channel 40 V, 5.0 mΩ, 80 A, DPAK, TO-220, IPAK, I2PAK STripFET III Power MOSFET Features Type • ■ VDSS RDS on max ID Pw STD90N4F3 40 V < 5.8mΩ 80 A 110 W STI90N4F3 40 V < 6.2 mΩ 80 A 110 W STP90N4F3


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    PDF STD90N4F3, STI90N4F3 STP90N4F3, STU90N4F3 O-220, STD90N4F3 STP90N4F3 O-220 STD90N4F3 STI90N4F3 STP90N4F3 STU90N4F3

    Untitled

    Abstract: No abstract text available
    Text: STP90N6F6 N-channel 60 V, 0.0059 Ω typ., 84 A STripFET VI DeepGATE™ Power MOSFET in a TO-220 package Datasheet - preliminary data Features Order code VDS RDS on max. ID PTOT STP90N6F6 60 V 0.0068 Ω 84 A 136 W •     Figure 1: Internal schematic diagram


    Original
    PDF STP90N6F6 O-220 DocID025190

    95n4f

    Abstract: STP95N4F3 95n4f3 STD95N4F3 JESD97 STU95N4F3
    Text: STD95N4F3 STP95N4F3 - STU95N4F3 N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 - IPAK STripFET Power MOSFET General features Type VDSS RDS on ID Pw STD95N4F3 40V <6.5mΩ 80A 110W STP95N4F3 40V <6.5mΩ 80A 110W STU95N4F3 40V <6.5mΩ 80A 110W • Standard threshold drive


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    PDF STD95N4F3 STP95N4F3 STU95N4F3 O-220 STP95N4F3 O-220 95n4f 95n4f3 STD95N4F3 JESD97 STU95N4F3

    Stanson Technology

    Abstract: TH 9437 P channel MOSFET 1A MOSFET 30v sop-8
    Text: P943 7 ST STP 9437 P Channel Enhancement Mode MOSFET - 5.7A DESCRIPTION STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


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    PDF STP9437 STP9437 -30V/-5 -30V/-4 Stanson Technology TH 9437 P channel MOSFET 1A MOSFET 30v sop-8

    w9nk70z

    Abstract: P9NK70Z p9nk70zfp b9nk70z STP9NK70Z P9NK70 w9nk70z equivalent w9nk70 B9NK70Z-1 STW9NK70Z
    Text: STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z • ■ ■ ■ ■ ■ ■ VDSS RDS on


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    PDF STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z O-220/FP/D2PAK/I2PAK/TO-247 STP9NK70Z STB9NK70Z STB9NK70Z-1 w9nk70z P9NK70Z p9nk70zfp b9nk70z P9NK70 w9nk70z equivalent w9nk70 B9NK70Z-1 STW9NK70Z

    P9NB60

    Abstract: P9NB60FP
    Text: STP9NB60 STP9NB60FP  N - CHANNEL 600V - 0.7Ω - 9A TO-220/TO220FP PowerMESH MOSFET TYPE ST P9NB60 ST P9NB60FP • ■ ■ ■ ■ V DSS R DS on ID 600 V 600 V < 0.8 Ω < 0.8 Ω 9.0 A 9.0 A TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY


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    PDF STP9NB60 STP9NB60FP O-220/TO220FP P9NB60 P9NB60FP P9NB60FP

    P9NK60ZFP

    Abstract: p9nk60z B9NK60Z STP9NK60ZFP p9nk60zf
    Text: STP9NK60Z - STP9NK60ZFP STB9NK60Z - STB9NK60Z-1 N-CHANNEL 600V - 0.85Ω - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH Power MOSFET TYPE STP9NK60Z STP9NK60ZFP STB9NK60Z STB9NK60Z-1 • ■ ■ ■ ■ ■ ■ VDSS 600 600 600 600 V V V V R DS on


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    PDF O-220/FP/D2PAK/I2PAK STP9NK60Z STP9NK60ZFP STB9NK60Z STB9NK60Z-1 STB9NK60Z-1 O-220 P9NK60ZFP p9nk60z B9NK60Z p9nk60zf

    P9NK60ZFP

    Abstract: p9nk60z B9NK60Z p9nk60zf P9NK60 B9NK60Z-1 stp9nk60z STP9NK60ZFP STB9NK60Z
    Text: STP9NK60Z - STP9NK60ZFP STB9NK60Z - STB9NK60Z-1 N-CHANNEL 600V - 0.85Ω - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH Power MOSFET TYPE STP9NK60Z STP9NK60ZFP STB9NK60Z STB9NK60Z-1 • ■ ■ ■ ■ ■ ■ VDSS 600 600 600 600 V V V V R DS on


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    PDF O-220/FP/D2PAK/I2PAK STP9NK60Z STP9NK60ZFP STB9NK60Z STB9NK60Z-1 STB9NK60Z-1 O-220 P9NK60ZFP p9nk60z B9NK60Z p9nk60zf P9NK60 B9NK60Z-1

    STP9NM60N

    Abstract: STF9NM60 F9NM60N STD9NM60N STX9
    Text: STD9NM60N - STD9NM60N-1 STP9NM60N - STF9NM60N N-channel 600V - 0.47Ω - 9A - TO-220 /FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 2 1 STD9NM60N 650V <0.51Ω 9A STD9NM60N-1 650V <0.51Ω 9A STF9NM60N


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    PDF STD9NM60N STD9NM60N-1 STP9NM60N STF9NM60N O-220 STF9NM60N STP9NM60N O-220 STF9NM60 F9NM60N STX9

    STP90N15F4

    Abstract: 90N15F4 STH90N15F4-2 90N15 st 393
    Text: STH90N15F4-2 STP90N15F4 N-channel 150 V, 12.5 mΩ, 95 A TO-220, H2PAK STripFET DeepGATE™ Power MOSFET Features • ■ Type VDSS RDS on max ID STH90N15F4-2 150 V < 15.6 mΩ 95 A STP90N15F4 150 V < 16 mΩ 90 A 2 Extremely low on-resistance RDS(on)


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    PDF STH90N15F4-2 STP90N15F4 O-220, O-220 STP90N15F4 90N15F4 STH90N15F4-2 90N15 st 393

    W9NK90Z

    Abstract: p9nk90 W9NK90Z equivalent STP9NK90Z F9NK90Z P9NK90Z STB9NK90Z STF9NK90Z STW9NK90Z MOSFET 900V TO-220
    Text: STB9NK90Z - STFPNK90Z STP9NK90Z - STW9NK90Z N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET General features Type VDSS RDS on ID Pw STB9NK90Z 900V <1.3Ω 8A 160 W 3 3 STW9NK90Z 900V <1.3Ω 8A 160 W STP9NK90Z


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    PDF STB9NK90Z STFPNK90Z STP9NK90Z STW9NK90Z O-220 O-247 STB9NK90Z STP9NK90Z STF9NK90Z W9NK90Z p9nk90 W9NK90Z equivalent F9NK90Z P9NK90Z STF9NK90Z STW9NK90Z MOSFET 900V TO-220

    STB90N55F4

    Abstract: 90N55F4 STP90N55F4
    Text: STB90N55F4 STP90N55F4 N-channel 55 V, 0.0064 Ω, 90 A TO-220, D2PAK STripFET DeepGATE™ Power MOSFET Preliminary data Features Type VDSS RDS on max ID STB90N55F4 55 V < 0.008 Ω 90 A STP90N55F4 55 V < 0.008 Ω 90 A • Exceptional dv/dt capability


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    PDF STB90N55F4 STP90N55F4 O-220, O-220 STB90N55F4 90N55F4 STP90N55F4

    JESD97

    Abstract: STP90NS04ZC
    Text: STP90NS04ZC N-channel clamped 5mΩ - 80A TO-220 Fully protected SAFeFET Power MOSFET Features Type VDSS RDS on ID STP90NS04ZC Clamped < 6mΩ 80A • Low capacitance and gate charge ■ 100% avalanche tested ■ 175°C maximum junction temperature 3 1


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    PDF STP90NS04ZC O-220 JESD97 STP90NS04ZC

    STP9NB60

    Abstract: STP9NB60FP
    Text: STP9NB60 STP9NB60FP N - CHANNEL 600V - 0.7Ω - 9A TO-220/TO220FP PowerMESH MOSFET TYPE STP9NB60 STP9NB60FP • ■ ■ ■ ■ V DSS R DS on ID 600 V 600 V < 0.8 Ω < 0.8 Ω 9.0 A 9.0 A TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


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    PDF STP9NB60 STP9NB60FP O-220/TO220FP STP9NB60 STP9NB60FP

    STB9NK60ZD

    Abstract: No abstract text available
    Text: STP9NK60ZD - STF9NK60ZD STB9NK60ZD N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET ADVANCED DATA TYPE STP9NK60ZD STF9NK60ZD STB9NK60ZD • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V 600 V 600 V < 0.95 Ω < 0.95 Ω < 0.95 Ω


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    PDF STP9NK60ZD STF9NK60ZD STB9NK60ZD O-220/TO-220FP/D2PAK STP9NK60ZD O-220 O-220FP STB9NK60ZD

    JESD97

    Abstract: STD95N04 STP95N04
    Text: STD95N04 STP95N04 N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 STripFET Power MOSFET General features • ■ Type VDSS RDS on ID Pw STD95N04 40V <6.5mΩ 80A 110W STP95N04 40V <6.5mΩ 80A 110W Standard threshold drive 3 1 100% avalanche tested DPAK


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    PDF STD95N04 STP95N04 O-220 JESD97 STD95N04 STP95N04

    Untitled

    Abstract: No abstract text available
    Text: STP9547 P Channel Enhancement Mode MOSFET - 6.8A DESCRIPTION The STP9547 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


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    PDF STP9547 STP9547 -40V/-5

    MOSFET 60V 75A

    Abstract: TF-680
    Text: 235 STP9 STP92 P Channel Enhancement Mode MOSFET - 7.5A DESCRIPTION STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly


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    PDF STP9235 STP92 STP9235 -25V/-7 -25V/-6 -25V/-5 MOSFET 60V 75A TF-680

    STP9N

    Abstract: No abstract text available
    Text: £jï SGS-THOMSON ULKgraMOeS STP9NA50 STP9NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V S TP9N A 50 STP9N A 50FI • . . . . . . dss 500 V 500 V RDS on Id < 0.8 Q. < 0.8 Q. 8.8 A 5 A TYPICAL R D S (on) = 0.7 £2 ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan
    PDF STP9NA50 STP9NA50FI STP9N

    Untitled

    Abstract: No abstract text available
    Text: STP9NA50 STP9NA50FI SGS-THOMSON HLlCTIàìO« N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP9N A 50 STP9N A 50FI Voss RoS on lo I 500 V 500 V < 0.8 Ç1 < 0.8 Q. 8.8 A 5 A j j . TYPICAL RDS(on) = 0.7 Q . ± 30V GATE TO SOURCE VOLTAGE RATING


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