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    STP60N06 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STP60N06 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP60N06-14 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STP60N06-16 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF
    STP60N06-16 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP60N06FI Toshiba Power MOSFETs Cross Reference Guide Original PDF

    STP60N06 Datasheets Context Search

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    STP60N06

    Abstract: STP60N06FI
    Text: STP60N06 STP60N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP60N06 STP60N06FI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.02 Ω < 0.02 Ω 60 A 32 A TYPICAL RDS(on) = 0.017 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


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    PDF STP60N06 STP60N06FI 100oC 175oC O-220 ISOWATT220 STP60N06 STP60N06FI

    Untitled

    Abstract: No abstract text available
    Text: STP60N06 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)60# I(DM) Max. (A) Pulsed I(D)42 @Temp (øC)100# IDM Max (@25øC Amb)240 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)


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    PDF STP60N06

    STP60N06

    Abstract: STP60N05-14 STP60N06-14
    Text: STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP60N05-14 STP60N06-14 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 60 V < 0.014 Ω < 0.014 Ω 60 A 60 A TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY


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    PDF STP60N05-14 STP60N06-14 100oC O-220 STP60N06 STP60N05-14 STP60N06-14

    STP60N06-14

    Abstract: STP60N06 DD 127 D TRANSISTOR STP60N05-14 airbag TV150
    Text: STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP60N05-14 STP60N06-14 V DSS R DS on ID 50 V 60 V < 0.014 Ω < 0.014 Ω 60 A 60 A TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


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    PDF STP60N05-14 STP60N06-14 100oC O-220 STP60N06-14 STP60N06 DD 127 D TRANSISTOR STP60N05-14 airbag TV150

    Untitled

    Abstract: No abstract text available
    Text: STP60N06-16 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)60# I(DM) Max. (A) Pulsed I(D)42 @Temp (øC)100# IDM Max (@25øC Amb)240 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)


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    PDF STP60N06-16

    STP60N06

    Abstract: STP60N06-16 STP60N05-16
    Text: STP60N05-16 STP60N06-16 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP60N05-16 STP60N06-16 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 60 V < 0.016 Ω < 0.016 Ω 60 A 60 A TYPICAL RDS(on) = 0.013 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


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    PDF STP60N05-16 STP60N06-16 100oC O-220 STP60N06 STP60N06-16 STP60N05-16

    P60N06

    Abstract: P60N06-14 p60n05 P60N05-14 p60n P60n0 STP60N05-14 STP60N06-14 stp60n06
    Text: STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA T YPE ST P60N05-14 ST P60N06-14 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS o n ID 50 V 60 V < 0.014 Ω < 0.014 Ω 60 A 60 A TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY


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    PDF STP60N05-14 STP60N06-14 P60N05-14 P60N06-14 100oC O-220 P60N06 P60N06-14 p60n05 P60N05-14 p60n P60n0 STP60N05-14 STP60N06-14 stp60n06

    Untitled

    Abstract: No abstract text available
    Text: STP60N06FI Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)32# I(DM) Max. (A) Pulsed I(D)22 @Temp (øC)100# IDM Max (@25øC Amb)240 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)45# Minimum Operating Temp (øC)


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    PDF STP60N06FI

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


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    schematic diagram dc-ac welding inverter

    Abstract: schematic diagram dc-ac welding inverter CIRCUIT schematic diagram UPS schematic diagram welding inverter schematic diagram dc-ac inverter schematic diagram welding inverter control schematic diagram UPS 600 Power free high current smps circuit diagram BUZ71 application inverter irf840
    Text: BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ71 BUZ71FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.1 Ω < 0.1 Ω 18 A 12 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


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    PDF BUZ71 BUZ71FI 100oC 175oC O-220 ISOWATT220 schematic diagram dc-ac welding inverter schematic diagram dc-ac welding inverter CIRCUIT schematic diagram UPS schematic diagram welding inverter schematic diagram dc-ac inverter schematic diagram welding inverter control schematic diagram UPS 600 Power free high current smps circuit diagram BUZ71 application inverter irf840

    IRFZ44N complementary

    Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 BUZ110S HRF3205 harris 4365
    Text: 39460.3 - UltraFET Cross LC 1/22/98 10:42 AM Page 1 55V UltraFET MOSFETs Competitive Cross Reference HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER BUK7508-55


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    PDF BUK7508-55 BUK7514-55A BUK7524-55A BUK7530-55A BUK7570-55A BUZ100S BUZ102S BUZ110S BUZ111S IRF1010N IRFZ44N complementary IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 HRF3205 harris 4365

    STE30NA50-DK

    Abstract: ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220
    Text: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 ISOWATT 220TM Fully isolated TO-220 MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000


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    PDF OT-82 OT-223 O-220 220TM MAX220TM 218TM O-247 MAX247TM Max247 Max220 STE30NA50-DK ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


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    PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


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    PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


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    PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    STP60N06FI

    Abstract: STP60N06
    Text: 7^237 G D M b S M b 212 « S G T H SGS-TffOMSON STP60N06 STP60N06FI N - CHANNEL EN H A N C EM EN T MODE PO W ER MOS TRA N SISTO R TYPE STP60N06 STP60N06FI . . . • . V dss R D S o n Id 60 V 60 V < 0.02 Q < 0.02 a 60 A 32 A TYPICAL RDs(on) = 0.017 a AVALANCHE RUGGED TECHNO LO GY


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    PDF STP60N06 STP60N06FI STP60N06 STP60N06FI 71SRE37 STP60N06/FI

    STP60

    Abstract: stp60n06
    Text: SGS-THOMSON £j ï ¡mora « STP60N05-16 STP60N06- 16 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V S T P 6 0 N 0 5 -1 6 S T P 6 0 N 0 6 -1 6 dss 50 V 60 V . RDS on Id < 0 .0 1 6 Q. < 0 .0 1 6 Q. 60 A 60 A Q . . TYPICAL RDs(on) = 0.013 AVALANCHE RUGGED TECHNOLOGY


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    PDF STP60N05-16 STP60N06- STP60 stp60n06

    stp60n06

    Abstract: No abstract text available
    Text: SGS-THOMSON £ j ï ULKgraMOeS STP60N06 STP60N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP60N 06 STP60N 06FI V dss RDS on Id 60 V 60 V < 0.0 2 Q. < 0.0 2 Q. 60 A 32 A . Q . . TYPICAL RDs(on) = 0.017 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED


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    PDF STP60N06 STP60N06FI TP60N STP60N

    STP60N06-16

    Abstract: STP60N06 STP60N05 STP60N05-16 4s32 LD30-A STP60N05 10 LD30A
    Text: 7 ^ 2 ^ 2 3 7 D 0 4 b S 5 3 4 5 2 M S G T H SGS-THOMSON iï*^@^[I gTÎMO(gS STP60N05-16 STP60N06-16 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP60N05-16 STP60N 06-16 • . ■ ■ ■ . ■ V dss R D S (o n Id 50 V 60 V < 0.016 Q < 0.016 a


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    PDF DD4bS53 STP60N05-16 STP60N06-16 STP60N05 STP60N06- 7T2C1237 STP60N05-16/STP60N06-16 STP60N06-16 STP60N06 4s32 LD30-A STP60N05 10 LD30A

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON !LiM iO gS stp6onos-i4 STP60N06-1 4 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRE LI MI NARY DATA TYPE V dss S TP 60N 05-14 S TP 60N 06-14 50 V 60 V R DS(on < 0 .0 1 4 ß < 0 .0 1 4 ß Id 60 A 60 A • . ■ • . ■ ■ TYPICAL R D S (on) =0.012 a


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    PDF STP60N06-1

    Untitled

    Abstract: No abstract text available
    Text: 7*12^237 D04bSS3 452 M SG TH SGS-THOMSON üO T ô*S STP60N05-16 STP60N06-16 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S T P 6 0 N 0 5 -1 6 S T P 6 0 N 0 6 -1 6 • . • . ■ . . V dss R d S ( o ii Id 50 V 60 V < 0 .0 1 6 Q < 0 .0 1 6 a 60 A


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    PDF D04bSS3 STP60N05-16 STP60N06-16 LAMPDRIV80 TP60N STP60N05-16/STP60N06-16

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON [MOigœilLiera *® STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP 60N 05-14 STP 60N 06-14 . . . . . . . . V dss R d S o ii Id 50 V 60 V < 0 .014 a. < 0 .014 Q. 60 A 60 A TYPICAL RDs(on) = 0.012 £1


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    PDF STP60N05-14 STP60N06-14

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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