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    STMICROELECTRONICS DIODE MARKING CODE EE Search Results

    STMICROELECTRONICS DIODE MARKING CODE EE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    STMICROELECTRONICS DIODE MARKING CODE EE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING 1F2

    Abstract: STMicroelectronics DIODE marking code EE ESDA18-1F2 transil diode DIODE 76A AN1235 st Diode marking EE 1F2 Diode STMicroelectronics DIODE marking code
    Text: ESDA18-1F2 ASD Application Specific Devices TRANSIL : Transient Voltage Suppressor FEATURES AND BENEFITS: • ■ ■ ■ ■ Stand-off voltage 16V Unidirectional device Low clamping factor VCL/VBR Fast response time Very thin package: 0.65 mm DESCRIPTION


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    PDF ESDA18-1F2 ESDA18-1F2 IEC61000-4-2 MARKING 1F2 STMicroelectronics DIODE marking code EE transil diode DIODE 76A AN1235 st Diode marking EE 1F2 Diode STMicroelectronics DIODE marking code

    STMicroelectronics DIODE marking code DX

    Abstract: STMicroelectronics DIODE marking code Et transil 6.8v STMicroelectronics marking code date me 6.8V bidirectional transil MARKING code mx stmicroelectronics code mx stmicroelectronics STMicroelectronics DIODE marking code ER GW marking code diode STMicroelectronics DIODE marking code gw
    Text: SM6T6V8A/220A SM6T6V8CA/220CA  TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs BREAKDOWN VOLTAGE RANGE : From 6.8V to 220 V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION SMB


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    PDF SM6T6V8A/220A SM6T6V8CA/220CA D0-214AA) STMicroelectronics DIODE marking code DX STMicroelectronics DIODE marking code Et transil 6.8v STMicroelectronics marking code date me 6.8V bidirectional transil MARKING code mx stmicroelectronics code mx stmicroelectronics STMicroelectronics DIODE marking code ER GW marking code diode STMicroelectronics DIODE marking code gw

    STMicroelectronics DIODE marking code EE

    Abstract: No abstract text available
    Text: ST1G3234 1-BIT DUAL SUPPLY BUS BUFFER LEVEL TRANSLATOR WITH A SIDE SERIES RESISTOR • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 4.4ns MAX. at TA=85°C VCCB = 1.65V; VCCA = 3.0V LOW POWER DISSIPATION: ICCA = ICCB = 5µA(MAX.) at TA=85°C


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    PDF ST1G3234 STMicroelectronics DIODE marking code EE

    STMicroelectronics DIODE marking code Et

    Abstract: STMicroelectronics dx DIODE marking code MARKING code mx stmicroelectronics sm6t15ca 6.8V bidirectional transil SM6T39A EX D0-214AA SM6T10A SM6T15A SM6T18A
    Text: SM6T6V8A/220A SM6T6V8CA/220CA TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs BREAKDOWN VOLTAGE RANGE : From 6.8V to 220 V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION SMB


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    PDF SM6T6V8A/220A SM6T6V8CA/220CA D0-214AA) STMicroelectronics DIODE marking code Et STMicroelectronics dx DIODE marking code MARKING code mx stmicroelectronics sm6t15ca 6.8V bidirectional transil SM6T39A EX D0-214AA SM6T10A SM6T15A SM6T18A

    STMicroelectronics DIODE marking code Et

    Abstract: STMicroelectronics DIODE marking code DX diodes STmicroelectronics marking MP STMicroelectronics DIODE marking code ER STMicroelectronics DIODE marking code EE transil 6.8v STMicroelectronics marking code date me code mx stmicroelectronics SM6T12A SM6T22A
    Text: SM6T6V8A/220A SM6T6V8CA/220CA  TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs BREAKDOWN VOLTAGE RANGE : From 6.8V to 220 V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION SMB


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    PDF SM6T6V8A/220A SM6T6V8CA/220CA D0-214AA) STMicroelectronics DIODE marking code Et STMicroelectronics DIODE marking code DX diodes STmicroelectronics marking MP STMicroelectronics DIODE marking code ER STMicroelectronics DIODE marking code EE transil 6.8v STMicroelectronics marking code date me code mx stmicroelectronics SM6T12A SM6T22A

    transil diode equivalent

    Abstract: No abstract text available
    Text: ESDA18-1F2 Transil , transient voltage suppressor Features • Stand-off voltage 16V ■ Unidirectional device ■ Low clamping factor VCL/VBR ■ Fast response time ■ Very thin package: 0.65 mm Flip Chip 4 bumps Complies with the following standards


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    PDF ESDA18-1F2 ESDA18-1F2 transil diode equivalent

    st Diode marking EE

    Abstract: MARKING 1F2 AN1235 AN1751 ESDA18-1F2 JESD97
    Text: ESDA18-1F2 Transil , transient voltage suppressor Features • Stand-off voltage 16V ■ Unidirectional device ■ Low clamping factor VCL/VBR ■ Fast response time ■ Very thin package: 0.65 mm Flip Chip 4 bumps Complies with the following standards


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    PDF ESDA18-1F2 ESDA18-1F2 st Diode marking EE MARKING 1F2 AN1235 AN1751 JESD97

    Untitled

    Abstract: No abstract text available
    Text: ST4G3234 4-BIT DUAL SUPPLY BUS BUFFER LEVEL TRANSLATOR WITH A SIDE SERIES RESISTOR • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 4.4ns MAX. at TA=85°C VCCB = 1.65V; VCCA = 3.0V LOW POWER DISSIPATION: ICCA = ICCB = 5µA(MAX.) at TA=85°C


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    PDF ST4G3234

    diode B3 7

    Abstract: ST4G3234 ST4G3234BJR STMicroelectronics DIODE marking code EE
    Text: ST4G3234 4-BIT DUAL SUPPLY BUS BUFFER LEVEL TRANSLATOR WITH A SIDE SERIES RESISTOR • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 4.4ns MAX. at TA=85°C VCCB = 1.65V; VCCA = 3.0V LOW POWER DISSIPATION: ICCA = ICCB = 5µA(MAX.) at TA=85°C


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    PDF ST4G3234 diode B3 7 ST4G3234 ST4G3234BJR STMicroelectronics DIODE marking code EE

    SM6T36CAY

    Abstract: SM6T39CAY SM6T33CAY 7637-2 protection circuit 7637-2 pulse 5 ISO-7637-2 pulse 5 mky marking 17741 SM6T27CAY SM6T7V5AY
    Text: SM6TY Automotive 600 W Transil Features • peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) A ■ stand-off voltage range: from 6.4 V to 58 V ■ unidirectional and bidirectional types ■ low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C


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    PDF AEC-Q101 DO-214AA) SM6T36CAY SM6T39CAY SM6T33CAY 7637-2 protection circuit 7637-2 pulse 5 ISO-7637-2 pulse 5 mky marking 17741 SM6T27CAY SM6T7V5AY

    transil sm6t

    Abstract: sm6t 26 ca diode s 30ca smb marking mp STMicroelectronics marking code date me ST marking code GL ST MX mark diode DIODE marking le st ER diode SMB marking lg smb
    Text: SM6T Transil Features • Peak Pulse Power: 600 W 10/1000 µs ■ Breakdown voltage range: From 6.8 V to 220 V ■ Uni and Bidirectional types ■ Low clamping factor ■ Fast response time K ■ UL recognized Unidirectional A Bidirectional Description


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    PDF DO-214AA) transil sm6t sm6t 26 ca diode s 30ca smb marking mp STMicroelectronics marking code date me ST marking code GL ST MX mark diode DIODE marking le st ER diode SMB marking lg smb

    diode GU do-214aA

    Abstract: STMicroelectronics DIODE marking code Et marking codes ER diode SMB marking lg smb ST marking code GL transil sm6t UM marking code DO214AA STMicroelectronics DIODE marking code EE DIODE SM6T75A GW marking code diode
    Text: SM6T Transil Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) ■ Breakdown voltage range: from 6.8 V to 220 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C K ■


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    PDF DO-214AA) E136224 diode GU do-214aA STMicroelectronics DIODE marking code Et marking codes ER diode SMB marking lg smb ST marking code GL transil sm6t UM marking code DO214AA STMicroelectronics DIODE marking code EE DIODE SM6T75A GW marking code diode

    transil marking EM

    Abstract: No abstract text available
    Text: SM6T Transil Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) ■ Breakdown voltage range: from 6.8 V to 220 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C K ■


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    PDF DO-214AA) transil marking EM

    ST marking code GL

    Abstract: marking codes ER diode SMB Part Marking STMicroelectronics SM6T68CA STMicroelectronics DIODE marking code DX diode GU do-214aA GW marking code diode st Diode marking EE STMicroelectronics DIODE marking code Et DIODE SM6T75A SM6T56A
    Text: SM6T Transil Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) ■ Breakdown voltage range: from 6.8 V to 220 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C K ■


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    PDF DO-214AA) E136224 ST marking code GL marking codes ER diode SMB Part Marking STMicroelectronics SM6T68CA STMicroelectronics DIODE marking code DX diode GU do-214aA GW marking code diode st Diode marking EE STMicroelectronics DIODE marking code Et DIODE SM6T75A SM6T56A

    Untitled

    Abstract: No abstract text available
    Text: ST1G3234B 1-bit dual supply bus buffer level translator with A-side series resistor Features • High speed: tPD = 4.4ns Max. at TA = 85°C VCCB = 1.65V; VCCA = 3.0V ■ Low power dissipation: ICCA = ICCB = 5 A(Max.) at TA = 85°C ■ Symmetrical output impedance:


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    PDF ST1G3234B 380Mbps 260Mbps

    SM6T36CAY

    Abstract: SM6T56CAY SM6T39CAY SM6T33CAY SM6T56AY 17741 SM6T75AY marking LXY SM6T15CAY nsy ca
    Text: SM6TY Automotive 600 W Transil Datasheet − production data Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) A ■ Stand-off voltage range: from 6 V to 70 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C


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    PDF AEC-Q101 DO-214AA) SM6T36CAY SM6T56CAY SM6T39CAY SM6T33CAY SM6T56AY 17741 SM6T75AY marking LXY SM6T15CAY nsy ca

    SM6T18CAY

    Abstract: sm6t39cay
    Text: SM6TY Automotive 600 W Transil Datasheet − production data Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) A ■ Stand-off voltage range: from 6 V to 70 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C


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    PDF AEC-Q101 DO-214AA) SM6T18CAY sm6t39cay

    ST MX mark diode

    Abstract: SM6T39A EX SM6T150A SM6T56A diode GU do-214aA DIODE marking le st smb marking mp marking lg smb SM6T30CA SM6T220A
    Text: SM6T Transil Features • Peak pulse power: 600 W 10/1000 µs ■ Breakdown voltage range: from 6.8 V to 220 V ■ Unidirectional and bidirectional types ■ Operating Tj max: 150 °C ■ JEDEC registered package outline A Complies with the following standards


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    PDF IEC61000-4-2 DO-214AA) IEC61000-4-5 883G-Method E136224 UL94V-0 MIL-STD-750, RS-481 IEC60286-3 IPC7531 ST MX mark diode SM6T39A EX SM6T150A SM6T56A diode GU do-214aA DIODE marking le st smb marking mp marking lg smb SM6T30CA SM6T220A

    Untitled

    Abstract: No abstract text available
    Text: STL3N65M5 N-channel 650 V, 0.90 Ω typ, 3 A MDmesh V Power MOSFET in a PowerFLAT™ 3.3 x 3.3 HV package Datasheet — preliminary data Features Order code RDS on max. STL3N65M5 < 1.1 Ω 3A 2 3 4 (1) 1. The value is rated according to Rthj-case 8 5 7 6


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    PDF STL3N65M5

    Untitled

    Abstract: No abstract text available
    Text: ST4G3235 4-BIT DUAL SUPPLY BUS BUFFER LEVEL TRANSLATOR WITH A SIDE SERIES RESISTOR • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 4.3ns MAX. at TA=85°C VCCB = 1.65V; VCCA = 3.0V LOW POWER DISSIPATION: ICCA = ICCB = 5µA(MAX.) at TA=85°C


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    PDF ST4G3235

    8N80K5

    Abstract: No abstract text available
    Text: STL8N80K5 N-channel 800 V, 0.76 Ω typ., 4.5 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet − preliminary data Features Order code VDS RDS on max. ID STL8N80K5 800 V 0.95 Ω 4.5 A • Outstanding RDS(on)*area ■


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    PDF STL8N80K5 8N80K5

    JESD97

    Abstract: ST1G3234 ST1G3234BJR
    Text: ST1G3234 1-bit dual supply bus buffer level translator with A-side series resistor Features • High speed: tPD = 4.4ns Max. at TA = 85°C VCCB = 1.65V; VCCA = 3.0V ■ Low power dissipation: ICCA = ICCB = 5µA(Max.) at TA = 85°C ■ Symmetrical output impedance:


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    PDF ST1G3234 380Mbps JESD97 ST1G3234 ST1G3234BJR

    Untitled

    Abstract: No abstract text available
    Text: STL15N65M5 N-channel 650 V, 0.335 Ω typ., 10 A MDmesh V Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet − production data Features Order code VDSS RDS on max ID STL15N65M5 710 V < 0.375 Ω 10 A(1) 1. The value is rated according to Rthj-case and limited by


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    PDF STL15N65M5 DocID023633

    Untitled

    Abstract: No abstract text available
    Text: STL2N80K5 N-channel 800 V, 3.7 Ω typ., 2 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT™ 5x6 VHV Datasheet - preliminary data Features Order code VDS RDS on max. ID STL2N80K5 800 V 4.9 Ω 2A • Outstanding RDS(on)*area 1 • Worldwide best FOM (figure of merit)


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    PDF STL2N80K5 DocID025104