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    STB1132 Search Results

    STB1132 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STB1132 AUK PNP Silicon Transistor Original PDF
    STB1132O AUK TRANS GP BJT PNP 32V 1A 3SOT-89 Original PDF
    STB1132Y AUK TRANS GP BJT PNP 32V 1A 3SOT-89 Original PDF

    STB1132 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10003 NPN

    Abstract: STD1664 STB1132 a2 sot-89 KST-8004-001 TRANSISTOR 10003
    Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132


    Original     		PDF STD1664 STB1132 OT-89 KST-8004-001 500mA, 10003 NPN STD1664 STB1132 a2 sot-89 KST-8004-001 TRANSISTOR 10003

    STB1132

    Abstract: STD1664
    Text: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664


    Original     		PDF STB1132 STD1664 OT-89 KST-8001-002 -500mA, -50mA -50mA, 30MHz STB1132 STD1664

    STD1664

    Abstract: Transistor STB1132 a2 sot-89
    Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132


    Original     		PDF STD1664 STB1132 OT-89 KSD-T5B009-000 STD1664 Transistor STB1132 a2 sot-89

    Untitled

    Abstract: No abstract text available
    Text: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664


    Original     		PDF STB1132 STD1664 OT-89 KST-8001-003

    STB1132

    Abstract: Transistor STD1664 a1 sot-89
    Text: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664


    Original     		PDF STB1132 STD1664 OT-89 KST-8001-003 STB1132 Transistor STD1664 a1 sot-89

    Untitled

    Abstract: No abstract text available
    Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132


    Original     		PDF STD1664 STB1132 OT-89 KST-8004-002

    Untitled

    Abstract: No abstract text available
    Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132


    Original     		PDF STD1664 STB1132 OT-89 KST-8004-003

    STD1664

    Abstract: STB1132
    Text: STB1132 PNP Silicon Transistor Description PIN • Medium power amplifier Features • PC Collector power dissipation =1W(Ceramic substate of 250 ㎟x0.8t used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664


    Original     		PDF STB1132 STD1664 OT-89 KSD-T5B021-001 STD1664 STB1132

    STD1664

    Abstract: STB1132
    Text: STD1664 NPN Silicon Transistor PIN Connection Description • Medium power amplifier application Features • PC Collector power dissipation =1W (Ceramic substate of 250 ㎟x0.8t used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132


    Original     		PDF STD1664 STB1132 OT-89 KSD-T5B009-001 STD1664 STB1132

    Untitled

    Abstract: No abstract text available
    Text: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664


    Original     		PDF STB1132 STD1664 OT-89 KST-8001-003

    Untitled

    Abstract: No abstract text available
    Text: STB1132 PNP Silicon Transistor Description PIN • Medium power am plifier Features • PC Collect or pow er dissipat ion = 1W( Ceram ic subst at e of 250 x 0.8t used) • Low collect or sat urat ion volt age : VCE( sat ) = - 0.2V( Typ.) • Com plem ent ary pair wit h STD1664


    Original     		PDF STB1132 STD1664 OT-89 KSD-T5B021-001

    Untitled

    Abstract: No abstract text available
    Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132


    Original     		PDF STD1664 STB1132 OT-89 KST-8004-003

    Untitled

    Abstract: No abstract text available
    Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132


    Original     		PDF STD1664 STB1132 OT-89 KST-8004-003

    Untitled

    Abstract: No abstract text available
    Text: STD1664 NPN Silicon Transistor PIN Connection Description • Medium power am plifier applicat ion Features • PC Collect or pow er dissipat ion = 1W ( Ceram ic subst at e of 250 x 0.8t used) • Low collect or sat urat ion volt age : VCE( sat ) = 0.15V( Typ.)


    Original     		PDF STD1664 STB1132 OT-89 KSD-T5B009-001