Untitled
Abstract: No abstract text available
Text: S71GL064A based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 64 Megabit (4 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8 Megabit (1M/512K x 16-bit) Pseudo Static RAM / Static RAM ADVANCE Distinctive Characteristics MCP Features
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S71GL064A
16-bit)
1M/512K
TLC056)
S29GL064
S71GL064A80/S71GL064A08
S71GL064AA0/S71GL064A0A
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63 ball fbga thermal resistance spansion
Abstract: S29AL S29AL016M S71AL016M S71AL016M40 spansion solder profile
Text: S71AL016M Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 16 Megabit (1 M x 16-bit) CMOS 3.0 Volt-only Flash Memory and 4 Megabit (256K x 16-bit) Static RAM/ Pseudo Static RAM ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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S71AL016M
16-bit)
S71AL016M
63 ball fbga thermal resistance spansion
S29AL
S29AL016M
S71AL016M40
spansion solder profile
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SA1127
Abstract: SA1115 JEDEC Matrix Tray outlines SA1117
Text: S71PL127JB0/S71PL129JB0/S71PL064JB0 with pSRAM Type 2, Rev D based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 128/64 Megabit (8/4M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 32 Megabit (2M x 16-bit) Static RAM/Pseudo Static RAM
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S71PL127JB0/S71PL129JB0/S71PL064JB0
16-bit)
S71PL-JB0
SA1127
SA1115
JEDEC Matrix Tray outlines
SA1117
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spansion S29GL064
Abstract: bfw 10 transistor S29GL064 S71GL064A S71GL064A08-0B S71GL064A08-0F S71GL064A80-0K S71GL064A80-0P s29glxxxa Stacked 4MB Flash and 1MB SRAM
Text: S71GL064A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 64 Megabit (4 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8 Megabit (1M/512K x 16-bit) Pseudo Static RAM / Static RAM ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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S71GL064A
16-bit)
1M/512K
spansion S29GL064
bfw 10 transistor
S29GL064
S71GL064A08-0B
S71GL064A08-0F
S71GL064A80-0K
S71GL064A80-0P
s29glxxxa
Stacked 4MB Flash and 1MB SRAM
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sram 256mb 64X
Abstract: S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL-J S71PL256N S71PL127J
Text: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM
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S71PL-J
256M/128/64/32
16/8/4/2M
16-bit)
4M/2M/1M/512K/256K
sram 256mb 64X
S29PL127J
S71PL032J40
S71PL032J80
S71PL032JA0
S71PL256N
S71PL127J
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Mcp90
Abstract: MCP78 032J mcp68
Text: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 128/64/32 Megabit (8/4/2 M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM
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S71PL254/127/064/032J
16-bit)
4M/2M/1M/512K/256K
S71PL
S29PL
Mcp90
MCP78
032J
mcp68
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S71PL064JA0
Abstract: S71PL064JB0 S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80 PL032J Spansion s29pl127j
Text: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 128/64/32 Megabit (8/4/2 M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM
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S71PL254/127/064/032J
16-bit)
4M/2M/1M/512K/256K
S71PL
S71PL064JA0
S71PL064JB0
S29PL127J
S71PL032J40
S71PL032J80
S71PL032JA0
S71PL064J80
PL032J
Spansion s29pl127j
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MCP 90
Abstract: bfw 10 transistor transistor marking A21 S71PL064 bfw resistor S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80
Text: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and SRAM 128/64/32 Megabit (8/4/2 M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/ 32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM
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S71PL254/127/064/032J
16-bit)
4M/2M/1M/512K/256K
S71PL
MCP 90
bfw 10 transistor
transistor marking A21
S71PL064
bfw resistor
S29PL127J
S71PL032J40
S71PL032J80
S71PL032JA0
S71PL064J80
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Static RAM fujitsu
Abstract: MB81C1002A
Text: October 1989 Edition 1.0 FUJITSU DATA SHEET MB81C1002A-60/-80/-10 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 1,048,576 X 1 BIT Static Column Mode Dynamic RAM The Fujitsu MB81C1002A is CMOS fully decoded dynamic RAM organized as 1,048,576 words x
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MB81C1002A-60/-80/-10
MB81C1002A
1C1002A
ZIP-20P-M02
Static RAM fujitsu
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Untitled
Abstract: No abstract text available
Text: November 1989 Edition 1.1 FUJITSU DATA SHEET MB81C4258-70/-80/-10/-12 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 262,144 x 4 BIT Static Column Mode Dynamic RAM The Fujitsu MB81C4258 is CMOS fuBy decoded dynamic RAM organized as 262,144 words x 4
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MB81C4258-70/-80/-10/-12
MB81C4258
SOJ-26)
LCC-26P-M
C260S4S
MB81C4258-70
MB81C4258-80
MB81C4258-10
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Untitled
Abstract: No abstract text available
Text: November 1989 Edition 1.1 FUJITSU DATASHEET MB81C1002-70/-80/-10/-12 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 1,048,576 X 1 BIT Static Column Mode Dynamic RAM The Fujitsu MB81C1002 is CMOS fully decoded dynamic RAM organized as 1,048,576 words x 1
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MB81C1002-70/-80/-10/-12
MB81C1002
theMB81C1002
26-LEAD
SOJ-26)
LCC-26P-M04)
C26054S-1C
MB81C1002-70
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Untitled
Abstract: No abstract text available
Text: November 1989 Edition 1.1 FUJITSU DATASHEET MB81C4258-70/-80/-10/-12 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 262,144 x 4 BIT Static Column Mode Dynamic RAM The Fujitsu MB81C4258 is CMOS fully decocted dynamic RAM organized as 262,144 words x 4
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MB81C4258-70/-80/-10/-12
MB81C4258
MB81C4258
adJ-26)
LCC-26P-M
C26054S-1C
MB81C4258-70
MB81C4258-80
MB81C4258-10
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Untitled
Abstract: No abstract text available
Text: October 1989 Edition 1.0 FUJITSU DATA S H EE T MB81C4258A-60/-80/-10 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 262,144 x 4 BIT Static Column Mode Dynamic RAM The Fujitsu MB81C4258A is CMOS fully decoded dynamic RAM organized as 262,144 words x 4
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OCR Scan
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PDF
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MB81C4258A-60/-80/-10
MB81C4258A
MB81C4258A
ZIP-20P-M02
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T3A3
Abstract: No abstract text available
Text: November 1989 Edition 1.1 — = FUJITSU DATASHEET MB81C1002-70/-80/-10/-12 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 1,048,576 X 1 BIT Static Column Mode Dynamic RAM The Fujitsu M B81C 1002 is CMOS fuHy decoded dynamic RAM organized as 1,046,576 words x 1
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MB81C1002-70/-80/-10/-12
MB81C1002
theMB61C1002
MB81C1002-70
MB81C1002-80
MB81C1002-10
MB81C1002-12
26-LEAD
SOJ-26)
LCC-26P-M04)
T3A3
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Untitled
Abstract: No abstract text available
Text: DUAL PORT STATIC RAM 2K x 8 -B IT CMOS FUJITSU M B8421/22-90 MB8421/22-90L MB8421/22-12 MB8421/22-12L May 1989 Edition 2.0 DUAL PORT STATIC RAM 2K X 8-BIT CMOS The Fujitsu MB8421/MB8422 are 2K by 8 dual-port high-perform ance Static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use
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B8421/22-90
MB8421/22-90L
MB8421/22-12
MB8421/22-12L
MB8421/MB8422
MB8421
MB8422
aut709
MB8421/22-90
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sun hold RAS 0610
Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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A16685-7
EMTR1147
sun hold RAS 0610
oki Logic
Motorola transistor 7144
MSC2304
M5M41000
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Untitled
Abstract: No abstract text available
Text: DUAL PORT STATIC RAM 2K x 8 -B IT CMOS FUJITSU M B8421/22-90 MB8421/22-90L MB8421/22-12 MB8421/22-12L May 1989 Edition 2.0 DUAL PORT STATIC RAM 2K X 8-BIT CMOS The Fujitsu MB8421/MB8422 are 2K by 8 dual-port high-perform ance Static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use
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B8421/22-90
MB8421/22-90L
MB8421/22-12
MB8421/22-12L
MB8421/MB8422
MB8421
MB8422
FPT-64P-M
F64005S
MB8421/22-90
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organizational structure samsung
Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
Text: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116
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LH5116
Am9128
CDM6116
HM6116A
HY6116
HM6116
MS6516
SRM2016
MK6116
CXK5816
organizational structure samsung
NMS256X8
MICRON Cross Reference
NMS256
256K RAM HM62256
MK6264
51256SL
TC5565 "cross reference"
MN44256
M5M5256
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MB81C258-12
Abstract: c258 MB81C258 MB81C258-10
Text: FU JITSU 262144 BIT CMOS STATIC COLUMN DYNAMIC RAM MB81C258-10 MB81C258-12 MB81C258-15 1 1 1 O c to b e r 1 9 8 8 E d itio n 3 .0 262,144 x 1 BIT CMOS STATIC COLUMN DYNAMIC RAM The Fujitsu MB 81C258 is CMOS static colum n dynam ic random access memo ry, SC-DRAM, w hich is organized as 262144 w ord by 1 bit. This SC-DRAM is
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MB81C258-10
MB81C258-12
MB81C258-15
81C258
16030S
MB81C258-10
c258
MB81C258
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Untitled
Abstract: No abstract text available
Text: October 1989 Edition 1.0 FUJITSU DATA S H E E T MB81C1002A-60/-80/-W C M O S 1,048,576 BIT STATIC COLUM N M O D E DYNAM IC RAM CMOS 1,048,576 X 1 BIT Static Column Mode Dynamic RAM The Fujitsu M B 8 1 C 1 0 0 2 A is C M O S fully decoded dynamic R A M organized a s 1,046,576 words x
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PDF
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MB81C1002A-60/-80/-W
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Untitled
Abstract: No abstract text available
Text: October 1989 Edition 1.0 FUJITSU DATA SHEET MB81C4258A-60/-80/-10 C M O S 1,048,576 BIT STATIC COLUM N M O D E DYNAM IC RAM C M O S 262,144 x 4 BIT Static Column Mode Dynamic RAM The Fujitsu M B 8 1 C 4 2 5 8 A is C M O S fully decoded dynamic R A M organized a s 262,144 words x 4
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MB81C4258A-60/-80/-10
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mb818251
Abstract: No abstract text available
Text: August 1993 Edition 1.0 FUJITSU DATA SHEET M B 8 18 2 5 5 -70/-80 2097,152 Bits 262,144 x 8 Bits Multi-port CMOS Dynamic RAM The Fujitsu MB818255 is a fully decoded dual port CMOS Dynamic RAM (DRAM) 256K words by 8 bits random access parallel port and 512 words by 8 bits Static RAM (SRAM)
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MB818255
400mil
40-pin
475mil
44-pin
mb818251
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TMS 3455
Abstract: MB818251 Furukawa Electric N4140
Text: August 1993 Edition 1.0 FUJITSU DATA S H E E T M B 8 18253-70/-80 2097,152 Bits 262,144 x 8 Bits Multi-port CMOS Dynamic RAM The Fujitsu MB818253 is a fully decoded dual port CMOS Dynamic RAM (DRAM) 256K words by 8 bits random access parallel port and 512 w ords by 8 bits Static RAM (SRAM)
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PDF
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MB818253
400mil
40-pin
475mil
44-pin
TMS 3455
MB818251
Furukawa Electric
N4140
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MB8114
Abstract: No abstract text available
Text: MB 8414E CMOS 4096-BIT STATIC RANDOM ACCESS MEMORY rT Tï TTCi ï S -3 £ . D z'ùr 0024 93 F uX T-Z July 1979 LOW POWER 4 K -B IT 1024 x 4 CMOS STATIC RAM The Fujitsu MB 8414 is a 1024 w ord by 4 b it static random access mem ory 1024 words by 4 bits organization
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8414E
4096-BIT
18-pin
MB8114
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