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Catalog Datasheet	MFG & Type	PDF	Document Tags
sb 050 D 331 Abstract: Transistor sb 050 D Text: SLOTTED OPTICAL SWITCH OPTOELECTRONICS QVE11233 PACKAGE DIMENSIONS 175 4 45’ L 250 (6 35 I_ — r* 331 (6 3S) .071 (1.70) J_ _ Lead spacing .300". Gap width of .150". Printed circuit board mounting. 2 mm aperture width. 350 <8 SB) MIN J_ _ _ •SEE NOTE 3	OCR Scan	PDF	QVE11233 QVE11233 ST2176 sb 050 D 331 Transistor sb 050 D
Untitled Abstract: No abstract text available Text: [• T i SLOTTED OPTICAL SWITCH OPTOELECTRONICS Q VE11233 PACKAGE DIMENSIONS T h e Q V E 11233 is designed to allow the user m axim um •- 500 1 2 701 PIN 1 ^ ^ ^ - 1 > c 1 175 (4.45J 1 L .250 (6 35 DESCRIPTION flexibility in applications. Each switch consists of an	OCR Scan	PDF	VE11233 ST2176
QVE11233 Abstract: SLOTTED OPTICAL SWITCH Dt3 diode Text: [*0 SLOTTED OPTICAL SWITCH OPTOELECTRONICS QVE11233 DESCRIPTIO N The QVE11233 is designed to allow the user m axim um flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN phototransistor across a .150" 3.81 m m gap.	OCR Scan	PDF	QVE11233 QVE11233 ST2176 000b353 SLOTTED OPTICAL SWITCH Dt3 diode
Untitled Abstract: No abstract text available Text: SLOTTED OPTICAL SWITCH 0PTOELECT H011CS QVE11233 DESCRIPTION The QVE11233 is designed to allow the user maximum flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN phototransistor across a .150" 3.81 mm gap. FEATURES	OCR Scan	PDF	H011C QVE11233 QVE11233 ST2176 74bbA51 0D0b354
QVE11233 Abstract: controlled gap 62 MW111 Text: SLOTTED OPTICAL SWITCH OPTOELECTRONICS QVE11233 P A C K A G E D IM E N SIO N S D ESC R IPT IO N Th e QVE11233 is designed to allow the user m axim um flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN phototransistor	OCR Scan	PDF	QVE11233 QVE11233 ST2176 controlled gap 62 MW111