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    ST160 Search Results

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    ST160 Price and Stock

    Everlight Electronics Co Ltd EAST16084WA1

    LED WHITE DIFFUSED 0603 SMD
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    DigiKey EAST16084WA1 Reel 18,000 3,000
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    Everlight Electronics Co Ltd EAST16084GA1

    LED GREEN CLEAR 0603 SMD
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    DigiKey EAST16084GA1 Reel 15,000 3,000
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    Avnet Asia EAST16084GA1 12 Weeks 21,000
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    Everlight Electronics Co Ltd EAST1608RGA2

    LED GREEN/RED CLEAR 2SMD
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    DigiKey EAST1608RGA2 Cut Tape 12,857 1
    • 1 $0.49
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    EAST1608RGA2 Digi-Reel 12,857 1
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    EAST1608RGA2 Reel 12,000 3,000
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    Everlight Electronics Co Ltd EAST16083RA1

    LED RED CLEAR 2SMD
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    DigiKey EAST16083RA1 Cut Tape 12,589 1
    • 1 $0.48
    • 10 $0.278
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    EAST16083RA1 Digi-Reel 12,589 1
    • 1 $0.48
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    EAST16083RA1 Reel 12,000 3,000
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    Everlight Electronics Co Ltd EAST16086GA0

    LED YLW-GRN CLEAR 2SMD
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    DigiKey EAST16086GA0 Digi-Reel 3,200 1
    • 1 $0.34
    • 10 $0.184
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    EAST16086GA0 Cut Tape 3,200 1
    • 1 $0.34
    • 10 $0.184
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    • 1000 $0.06171
    • 10000 $0.06171
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    EAST16086GA0 Reel 3,000 3,000
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    ST160 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ST160 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    ST16002 Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF
    ST-16002 Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF
    ST16002D US Sensor/Littelfuse Circuit Protection - Inrush Current Limiters (ICL) - ICL 16 OHM 20% 2A 15.24MM Original PDF
    ST16004 Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF
    ST-16004 Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF
    ST16006 Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF
    ST-16006 Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF
    ST16006A Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF
    ST-16006A Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF
    ST16008 Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF
    ST-16008 Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF
    ST1601 Unknown Cross Reference Datasheet Scan PDF
    ST16010 Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF
    ST-16010 Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF
    ST16010A Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF
    ST-16010A Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF
    ST16012 Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF
    ST-16012 Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF
    ST16018 Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF

    ST160 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ST160NF3LL

    Abstract: STB160NF3LL ISD 1720
    Text: STB160NF3LL N-CHANNEL 30V - 0.0026 Ω - 160A D2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE ST160NF3LL • ■ ■ ■ ■ ■ VDSS RDS on ID 30 V <0.003 Ω 160 A TYPICAL RDS(on) = 0.0026 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE LOGIC LEVEL DEVICE


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    PDF STB160NF3LL ST160NF3LL O-263) ST160NF3LL STB160NF3LL ISD 1720

    ST160NF3LL

    Abstract: STB160NF3LL ISD 1720
    Text: STB160NF3LL N-CHANNEL 30V - 0.0026 Ω - 160A D2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE ST160NF3LL • ■ ■ ■ ■ ■ V DSS RDS on ID 30 V <0.003 Ω 160 A TYPICAL RDS(on) = 0.0026 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE LOGIC LEVEL DEVICE


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    PDF STB160NF3LL ST160NF3LL O-263) ST160NF3LL STB160NF3LL ISD 1720

    ST1609

    Abstract: SCM12 LED standard data book electronique
    Text: R Strömungswächter ST1609 83 20 SCM12ABBFPKG/US 41 27 M12x1 72 60 Kompaktbauform 7,7 12 M12 x 1 27 Steckverbindung POTI M12x1 Einsatzbereich M12x1 LED Standard Elektrische Ausführung Ausgangsfunktion DC PNP Schließer / Öffner programmierbar Gehäusewerkstoff Elektronik


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    PDF ST1609 SCM12ABBFPKG/US M12x1 \DATEN\300\DB-FORM--PZD/01/10/94 ST1609 SCM12 LED standard data book electronique

    ja1238b22h

    Abstract: f80em-012ck-0 JF0825S2HN JF0625S1M JA1238S22H JA0925S22H JF0825S1M YW03010012BH YW04010012BM F75EM-024CK-0
    Text: Flat Axial Fan Range Features :Sizes - From 20mm to 254mm sq ● DC Voltages - 5, 12, 24, 48 & 53V ● AC Voltages - 110 & 220V ● ● Long life - Up to 160k hrs MTTF Airflow - up to 850 CFM ● Noise - as low as 13 dBA ● 3rd wire options available ●


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    PDF 254mm WT25489115BL WT25489115BM WT25489115BH WT25489220BL WT25489220BM WT25489220BH Inch/H20 mm/H20 ja1238b22h f80em-012ck-0 JF0825S2HN JF0625S1M JA1238S22H JA0925S22H JF0825S1M YW03010012BH YW04010012BM F75EM-024CK-0

    st 339

    Abstract: st339 diode 937 ke SLOTTED OPTICAL SWITCH for C3 937 ke ST1131-11 KE 34A
    Text: SLOTTED OPTICAL SWITCH op fiE L tm yics H21A1/2/3 SVM BQi MiUIMETERS MAX. MIN. •D 1 - S I ±y _ ^ 3 *1 SECTION X - X~T~ LEAD PROFILE ST?339*01 INCHES MIN, A W .7 11.0 ,422 433 A- 3.0 a? 119 .125 At 3.0 32 .113 125 <8*> b, .SCO .750 .50 NOM. .024 ,030


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    PDF H21A1/2/3 St113C-11 ST1133-11 ST1131-11 ST1132-11 st 339 st339 diode 937 ke SLOTTED OPTICAL SWITCH for C3 937 ke ST1131-11 KE 34A

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED AIGaAS SCHMITT TRIGGER OPTOCOUPLERS OPTOELECTRONICS H11N1 H11N2 H11N3 PACKAGE DIMENSIONS DESCRIPTION The H11N series has a medium-to-high speed integrated circuit detector optically coupled to a gallium-aluminumarsenide infrared emitting diode. The output incorporates


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    PDF H11N1 H11N2 H11N3 ST1603 ST2028 ST2029 ST2030 ST2032

    Untitled

    Abstract: No abstract text available
    Text: PHOTOFET OPTOCOUPLERS OPTOELECTRONICS H11F1 H11F2 H11F3 The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET


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    PDF H11F1 H11F2 H11F3 ST1603 74bbfl51

    C1847

    Abstract: No abstract text available
    Text: I HIGH-PERFORMANCE AIGaAs PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 1 I I MCT5210 MCT5211 PACKAGE DIMENSIONS DESCRIPTION The MCT-521X are high performance CMOS/LSTTL logic compatible phototransistor type optically coupled isolator products. They are constructed using a very low


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    PDF MCT5210 MCT5211 MCT-521X MCT-5211 C1850 C1852 74LiLifl51 C1847

    Untitled

    Abstract: No abstract text available
    Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS CQX14, CQX16 DESCRIPTION The CQX14/16 are 940nm LEDs in narrow angle, TO-46 packages. SEATING /fth X. FEATURES ST1332 Good optical to mechanical alignment SYMBOL INCHES MIN. A MILUMETERS MAX. MIN. NOTES Mechanically and wavelength matched to TO-18


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    PDF CQX14, CQX16 CQX14/16 940nm ST1332 74bbfi 74bbfiSl

    MQC3023

    Abstract: MOC3020 P
    Text: I NON-ZERO-CROSSING TRIACS OPTOELECTRONI CS MOC3020 MOC3Û21 MOC3Q22 MOC3Q23 PACKAGE DIMENSIONS DESCRIPTION The MOC3020, MOC3021, M003022 and MOC3023 are optically isolated triac driver devices. These devices contain a GaAs infrared emitting diode and a light activated silicon bilateral


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    PDF MOC3020 MOC3Q22 MOC3Q23 MOC3020, MOC3021, M003022 MOC3023 E90700 C1712 C1711 MQC3023 MOC3020 P

    STI-430

    Abstract: DTS-411 DTS-804 Transistor DTS801 DTS-430 DTS-423 transistor MJ 15024 STI801 DTS-723 transistor st 431
    Text: SEMICONDUCTOR TECHNOLOGY OSE D J fll3bM5fl D G 0 0 2 S b NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS STI Type ST-13071 ST-13080 ST-13081 ST-13090 ST-13091 Industry Type MJ-13071 MJ-13080 MJ-13081 MJ-13090 MJ-13091 Power Dissipation @25 °C watts


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    PDF DG0022L, ST-13071 ST-13080 ST-13081 ST-13090 ST-13091 MJ-13071 MJ-13080 MJ-13081 MJ-13090 STI-430 DTS-411 DTS-804 Transistor DTS801 DTS-430 DTS-423 transistor MJ 15024 STI801 DTS-723 transistor st 431

    Untitled

    Abstract: No abstract text available
    Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6264 PACKAGE DIMENSIONS DESCRIPTION The 1N6264 is a 940nm LED in a narrow angle, TO-46 package. S E A T IN G g ST1332 G ood optical to m echanical alignm ent SYMBOL INCHES MIN. MAX. A <f>b MILLIMETERS MIN. .255


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    PDF 1N6264 1N6264 940nm ST1332 74bbasi 000b3 ST1002 ST1007 ST1003 ST1006

    Untitled

    Abstract: No abstract text available
    Text: EO HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14P1/2 PACKAGE DIMENSIC The L14P series is a silicon phototransister mounted in a narrow angle, TO-18 package. 3 FEATURES SYMBOL INCHES MILLIMETERS MIN. MAX. MIN. MAX. 6.47 A .225 .255 5.71 èb .016 .021


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    PDF L14P1/2 00mW/Â at2870Â 74bbfl51 0D0b434

    2N5417

    Abstract: A 14U UD3008 2N5292 BD263 BD264A CI44 transistor t05 BC412 KIS434
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF BD265 BD265A BD265B Y220b BD265L BD266L BD267L 2N5417 A 14U UD3008 2N5292 BD263 BD264A CI44 transistor t05 BC412 KIS434

    2S711

    Abstract: NS437 A1380 transistor CI44 MM1758 T05 Package transistor t05 TZ7003 BC412 KIS434
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF T0106 TE3904 2N914A 2N2272 300M5A 2SC100 10B705 300MA 2S711 NS437 A1380 transistor CI44 MM1758 T05 Package transistor t05 TZ7003 BC412 KIS434

    2sc113

    Abstract: CI44
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: FQ B GaAs INFRARED EMITTING DIODE wmm* OPTOELECTRONICS CQX15, CQX17 PACKAGE DIMENSIONS DESCRIPTION The CQX15/17 are 940nm LEDs in wide angle, TO-46 packages. SEATING FEATURES Good optical to mechanical alignment SYM BO L IN C H E S MIN. A M ILLIM ETER S MAX.


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    PDF CQX15, CQX17 CQX15/17 940nm

    Untitled

    Abstract: No abstract text available
    Text: csxa PHOTODARUNGTON OPTOCOUPLERS s m E u m s iic s H11B1 H11B2 H11B3 The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-fine package High current transfer ratio H1181 -500% mtn.


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    PDF H11B1 H11B2 H11B3 H1181 H11B3 E90700 ST1603A H11B1) H11B2)

    Untitled

    Abstract: No abstract text available
    Text: E H PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS DESCRIPTION The 4N25, 4N26, 4N27, and 4N28 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide diode. t 1 8-3 6.86


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    PDF E90700

    NS437

    Abstract: NS435 NS438 A 14U CS3402 2N2222BT ST162t BC412 PT886 TZ7000
    Text: SY M B O L S & C O D ES E X P L A IN E D IN T Y P E No. CROSS-IND EX & T EC H N IC A L SEC T IO N S A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol


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    PDF 2SC109T SP8401 15dE1 2N3450T 100MSA 2SC108 100MIA 2SC199 100MS BFY15Ã NS437 NS435 NS438 A 14U CS3402 2N2222BT ST162t BC412 PT886 TZ7000

    switch H11B

    Abstract: optocouplers H11B1 ST1736 H11B2 H11B ST1723
    Text: PHOTODARLINGTON OPTOCOUPLERS B m E u tm M c s H11B1 H11B2 H11B3 PACKAGE DIMENSIONS E&] DESCRIPTION Si [ft The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodariington transistor in a dual in-line package.


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    PDF H11B1 H11B2 H11B3 H11B3-100 E90700 JI2-54! ST1603A ST1723 switch H11B optocouplers H11B1 ST1736 H11B ST1723

    C1959

    Abstract: C1957 transistor c1959 transistor IN5060 diode C1957 St1602 C1958 c1959 Y transistor transistor c1959 in5060
    Text: [*u PHOTO SCR OPTOCOUPLERS OPTOELECTRONICS 4N394N40 DESCRIPTION The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES & APPLICATIONS High efficiency, low degradation, liquid epitaxial LED


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    PDF 4N394N40 STI603 ST1602 E90700 Cto150Â Cto100Â Cfor10sec 220VAC ST2118 ST2119 C1959 C1957 transistor c1959 transistor IN5060 diode C1957 St1602 C1958 c1959 Y transistor transistor c1959 in5060

    ST-2124

    Abstract: ST2122 varistor xf 040 SC160B 3kw triac GE SC160B triac C2079 varistor xf H11AG1 H11AG2
    Text: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AG1 H11AG2 H11AG3 DESCRIPTION PACKAGE DIMENSIONS ft The H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device


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    PDF H11AG1 H11AG2 H11AG3 H11AG ST1603A ST-2124 ST2122 varistor xf 040 SC160B 3kw triac GE SC160B triac C2079 varistor xf

    st2506

    Abstract: CNY36 ST1609 TIP 422 transistor 0302B
    Text: C s O SLOTTED OPTICAL SWITCH OPTO E L E C T R O N I C S CNY36 PACKAGE DIMENSIONS SYMBOL MILLIMETERS MIN. S E C T IO N X - X L E A D P R O F IL E INCHES MIN. MAX. A 10.7 11.0 .422 .433 A, 3.0 3.2 .119 .125 .024 .030 @b 3 MAX. b, .600 .750 .50 NOM. .020 NOM.


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    PDF CNY36 Tg504 ST2505 ST2506 st2506 CNY36 ST1609 TIP 422 transistor 0302B