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    ST Z0 103 MA Search Results

    ST Z0 103 MA Datasheets Context Search

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    tocp255k

    Abstract: HFBR-4521 TOCP155 FSMA to ST FST Connectors MS100HU H4521 DIN127 DIN41626 F-05
    Text: Ratioplast-Optoelectronics GmbH LWL-Werkzeug und Zubehör FO Tools and Accessories Maßzeichnung / Dimension Kurzbeschreibung / Description Knickschutztülle schwarz, für Kabel bis 3,6 mm, Länge: 29 mm Bend protection boot black, for cable up to 3.6 mm, length: 29 mm


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    PDF MS100HU tocp255k HFBR-4521 TOCP155 FSMA to ST FST Connectors H4521 DIN127 DIN41626 F-05

    Untitled

    Abstract: No abstract text available
    Text: LSM330 iNEMO inertial module: 3D accelerometer and 3D gyroscope Datasheet - production data Description The LSM330 is a system-in-package featuring a 3D digital accelerometer with two embedded state machines that can be programmed to implement autonomous applications and a 3D digital


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    PDF LSM330 LSM330 LGA-24L DocID023426

    UM9441 UM9442

    Abstract: UMM5050 NKT 0039 HUM4020 NTE Semiconductor Technical Guide and Cross Refer wireless mobile charging through microwaves MSC 9415 hf power combiner broadband transformers mpd101 Structure rotary phase shifter
    Text: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of


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    PDF MPD-101A UM9441 UM9442 UMM5050 NKT 0039 HUM4020 NTE Semiconductor Technical Guide and Cross Refer wireless mobile charging through microwaves MSC 9415 hf power combiner broadband transformers mpd101 Structure rotary phase shifter

    philips ferrite 4b1

    Abstract: philips ferrite core 4b1 MEA200 3122 108 339 3 1 philips MATV amplifiers OM2063 SC16 gt 6312 UHF amplifier module
    Text: DISCRETE SEMICONDUCTORS DATA SHEET OM2063 Wideband amplifier module Product specification Supersedes data of June 1991 File under Discrete Semiconductors, SC16 1995 Nov 28 Philips Semiconductors Product specification Wideband amplifier module OM2063 DESCRIPTION


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    PDF OM2063 SCD46 143061/1000/02/pp12 philips ferrite 4b1 philips ferrite core 4b1 MEA200 3122 108 339 3 1 philips MATV amplifiers OM2063 SC16 gt 6312 UHF amplifier module

    Untitled

    Abstract: No abstract text available
    Text: LSM6DS1 iNEMO inertial module: 3D accelerometer and 3D gyroscope Datasheet - preliminary data Description The LSM6DS1 is a system-in-package featuring a 3D digital accelerometer and a 3D digital gyroscope. ST’s family of MEMS sensor modules leverages the robust and mature manufacturing


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    PDF LGA-16L DocID025605

    ablebond 88-1

    Abstract: Ablebond 968 Ablebond
    Text: Agilent AMMC-5026 2–35 GHz GaAs MMIC Traveling Wave Amplifier Data Sheet Features • Frequency range: 2 – 35 GHz • Gain: 10.5 dB • Gain flatness: ± 0.8 dB • Return loss: Input 17 dB, Output: 15 dB • Output power P-1dB : 24 dBm at 10 GHz 23 dBm at 20 GHz


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    PDF AMMC-5026 AMMC-5026-W10 AMMC-5026-W50 5989-3212EN 5989-3929EN ablebond 88-1 Ablebond 968 Ablebond

    Ablebond 968

    Abstract: AMMC-5026 HMMC-5026 ABLEBONd 86
    Text: Agilent AMMC-5026 2–35 GHz GaAs MMIC Traveling Wave Amplifier Data Sheet Features • Frequency range: 2 – 35 GHz • Gain: 10.5 dB • Gain flatness: ± 0.8 dB • Return loss: Input 17 dB, Output: 15 dB • Output power P-1dB : 24 dBm at 10 GHz 23 dBm at 20 GHz


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    PDF AMMC-5026 AMMC-5026 5988-9882EN Ablebond 968 HMMC-5026 ABLEBONd 86

    Untitled

    Abstract: No abstract text available
    Text: LSM6DS1 iNEMO inertial module: 3D accelerometer and 3D gyroscope Datasheet - preliminary data Description The LSM6DS1 is a system-in-package featuring a 3D digital accelerometer and a 3D digital gyroscope. ST’s family of MEMS sensor modules leverages the robust and mature manufacturing


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    PDF LGA-16L DocID025605

    GaAs MMIC ESD, Die Attach and Bonding Guidelines

    Abstract: AMMC-5026 AMMC-5026-W10 AMMC-5026-W50 HMMC-5026 Traveling Wave Amplifier
    Text: AMMC-5026 2–35 GHz GaAs MMIC Traveling Wave Amplifier Data Sheet Chip Size: 3050 x 840 µm 119 x 33 mils Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) Pad Dimensions: 75 x 75 µm (2.9 ± 0.4 mils) Description


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    PDF AMMC-5026 AMMC-5026 HMMC-5026 AMMC-5026-W10 AMMC-5026-W50 5989-3212EN 5989-3929EN GaAs MMIC ESD, Die Attach and Bonding Guidelines AMMC-5026-W10 AMMC-5026-W50 HMMC-5026 Traveling Wave Amplifier

    lsm9ds1tr

    Abstract: LGA-24L
    Text: LSM9DS1 iNEMO inertial module: 3D accelerometer, 3D gyroscope, 3D magnetometer Datasheet - preliminary data Applications • Indoor navigation  Smart user interfaces  Advanced gesture recognition  Gaming and virtual reality input devices LGA-24L 3.5x3x1.0 mm


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    PDF LGA-24L lsm9ds1tr LGA-24L

    LSM9DS0

    Abstract: No abstract text available
    Text: LSM9DS0 iNEMO inertial module: 3D accelerometer, 3D gyroscope, 3D magnetometer Datasheet - production data Applications • Indoor navigation  Smart user interfaces  Advanced gesture recognition  Gaming and virtual reality input devices LGA-24 4x4x1.0 mm


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    PDF LGA-24 DocID024763 LSM9DS0

    ST Z0 103 MA

    Abstract: No abstract text available
    Text: What HEW LETT* mLliM PACKARD 2-1 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 F e atu res • High Output Pow er: 18.0 dBm Typical Pi ¿s at 12 GHz • High Gain: 9.0 dB TypicalGssat 12 GHz • Low C ost P lastic Package • Tape-and-Reel Packaging


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    PDF ATF-26884 ATF-26884 ST Z0 103 MA

    Untitled

    Abstract: No abstract text available
    Text: ill# ICW 0RKS W149 4 4 0 BX A G Pset Spread Spectrum Frequency Synthesizer Features • Spread Spectrum feature always enabled • Maximized EMI suppression using IC WORKS’ Spread Spectrum Technology • l2C interface for programming • Power management control inputs


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    PDF 440BX 48MHz 24MHz 8-124MHz FDS-044

    201 429 HP

    Abstract: ATF-21186 ATF-21186-STR ATF-21186-TR1 0840 057 GLDB0 ga 1112
    Text: TAff% HEW LETT mLftM P A C K A R D 0 .5 - 6 GHz G eneral P urpose G allium A rsenide FET Technical Data ATF-21186 Features Description • Low N o ise Figure: 0.5 dB Typ. @ 2 GHz • H igh O utpu t Pow er: 19 dBm Typ. P ldB @ 2 GHz • H igh MSG: 13.5 dB Typ. @ 2 GHz


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    PDF ATF-21186 ATF-21186 Arse38 0G177Ã 5091-4862E 5965-8716E 201 429 HP ATF-21186-STR ATF-21186-TR1 0840 057 GLDB0 ga 1112

    Untitled

    Abstract: No abstract text available
    Text: What HEWLETT* mLliM PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0186 Features Description • Cascadable 50 Q. Gain Block • 3 dB Bandwidth: DC to 0.9 GHz The MSA-0186 is a high perfor­ mance silicon bipolar Monolithic Microwave Integrated Circuit


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    PDF MSA-0186 MSA-0186

    Untitled

    Abstract: No abstract text available
    Text: Preliminary W145 ill# ICW 0RKS 440BX AGPSet Spread Spectrum Frequency Generator Features • Maximized EMI suppression using IC W O R KS’Spread Spectrum Technology • Single chip system FTG for Intei^ 440BX AGPset • • • • • • • Three copies of CPU output


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    PDF 440BX 48MHz 24MHz 250pb

    IS-94 mux

    Abstract: Str x 5459
    Text: VITESSE 4 0 0 M b /s 6 4 x 6 4 C r o s s p & tiit S w itc h FEATURES • • • • • Superior Performance: 400 Mb/s • Operating Range: 0° to +70° C • Power Dissipation: 9.4 W atts Nominal , 14.7 W atts (Max) • Clocked or Flow-Through Operation


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    PDF VSC864A-4 VSC864A-4 VSC864 VSC864: 64x64 IS-94 mux Str x 5459

    Untitled

    Abstract: No abstract text available
    Text: ill# ICW 0RKS Advance Information W150 440BX AGPset Spread Spectrum Frequency Generator Features • Maximized EMI suppression using IC W O R KS’Spread Spectrum Technology • l2C interface for programming • Power m anagem ent control inputs • Single chip system FTG for InteP 440BX AGPset


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    PDF 440BX 48MHz 24MHz

    Transistor TT 2246

    Abstract: No abstract text available
    Text: W hp% m LUM H E W L E TT PA CKA RD 1 .5 -1 8 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low M inim um N oise Figure: I dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • A sso ciated Gain: 9.4 dB Typical at 12 GHz


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    PDF ATF-36163 OT-363 5964-4069E 5965-4747E Transistor TT 2246

    Untitled

    Abstract: No abstract text available
    Text: CYPRESS PRELIMINARY W199 Spread Spectrum FTG for VIA Apollo Pro-133 Features Table 1. Mode Input Table • Maximized EMI suppression using Cypress’s Spread Spectrum Technology • Single-chip system frequency synthesizer for VIA Apollo Pro-133 Pin 2 PCLSTOP#


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    PDF Pro-133 48-MHz 24-MHz 48-pin

    Untitled

    Abstract: No abstract text available
    Text: P A IR C H II-D w w w .fairchildsem i.com s e m i c o n d u c t o r tm RC7102 BX Spread Spectrum Frequency Synthesizer for Pentium II Description • M aximized EMI suppression using Fairchild’s proprietary Spread Spectrum Technology • Single chip system frequency synthesizer for Intel BX


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    PDF 48MHz 24MHz 150MHz RC7102 RC7102

    Untitled

    Abstract: No abstract text available
    Text: What H E W L E T T mLnM P a c k a r d Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0505 Features Description • Cascadable 50 Q Gain Block The MSA-0505 is a high perfor­ m ance m edium pow er silicon bipolar M onolithic Microwave Integrated C ircuit MMIC housed


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    PDF MSA-0505 MSA-0505 5965-9581E

    250M

    Abstract: IRFF220 IRFF221 IRFF222 IRFF223 T4 sm diode PD937
    Text: HE 0 I MaSSMSZ 0GQT37Q Ö | Data Shçet No. PD-9.378E INTERNATIONAL R E C T I F I E R ' 7 -3 Ÿ -O Ÿ INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IOR IRFF220 IRFF221 IM-CHAIMIMEL POWER MOSFETs TQ-39 PACKAGE IRFFSSS IRFFSS3 Features: 200 Volt, 0.8 Ohm HEXFET


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    PDF G-352 250M IRFF220 IRFF221 IRFF222 IRFF223 T4 sm diode PD937

    5964-4069E

    Abstract: saa 1094 ATF pHEMT MARKING VD9 saa 1059 SAA 1251 saa 1074 SAA 1085
    Text: Who I HEW LETT 1 "rim P A C K A R D 1.5-18 GHz Surface Mount Pseudomorpltic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low M inim um N oise F igure: I dB Typical at 12 GHz 0.6 dB Typical a t 4 GHz • A ssociated G ain: 9.4 dB Typical at 12 GHz


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    PDF ATF-36163 OT-363 Oj004 a079t0j0Q2 5964-4069E 4747E 5964-4069E saa 1094 ATF pHEMT MARKING VD9 saa 1059 SAA 1251 saa 1074 SAA 1085