C166S
Abstract: PEC 302 StK 412 230 stk 430 130 C166 RL10 RL11 RL12 RL13 bc 541
Text: Use r Ma nual, V 1.7, Ja nuary 2001 C166S V2 1 6 - B i t M ic r o c o n t r o l l e r M i c r o c o n t ro l le r s N e v e r s t o p t h i n k i n g . Edition 2001-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany
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C166S
D-81541
PEC 302
StK 412 230
stk 430 130
C166
RL10
RL11
RL12
RL13
bc 541
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Untitled
Abstract: No abstract text available
Text: PD - 94318C IRHY57133CMSE JANSR2N7488T3 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/705 5 TECHNOLOGY Product Summary Part Number IRHY57133CMSE Radiation Level 100K Rads (Si) RDS(on) 0.09Ω I D QPL Part Number
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94318C
IRHY57133CMSE
JANSR2N7488T3
O-257AA)
MIL-PRF-19500/705
5M-1994.
O-257AA.
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T0257AA
Abstract: IRHY57133CMSE JANSR2N7488T3 T0-257AA ERS 965
Text: PD - 94318C IRHY57133CMSE JANSR2N7488T3 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/705 5 TECHNOLOGY Product Summary Part Number IRHY57133CMSE Radiation Level 100K Rads (Si) RDS(on) 0.09Ω I D QPL Part Number
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94318C
IRHY57133CMSE
JANSR2N7488T3
O-257AA)
MIL-PRF-19500/705
5M-1994.
O-257AA.
T0257AA
IRHY57133CMSE
JANSR2N7488T3
T0-257AA
ERS 965
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Untitled
Abstract: No abstract text available
Text: PD - 94318B IRHY57133CMSE JANSR2N7488T3 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/705 5 TECHNOLOGY Product Summary Part Number IRHY57133CMSE Radiation Level 100K Rads (Si) RDS(on) 0.09Ω I D QPL Part Number
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94318B
IRHY57133CMSE
JANSR2N7488T3
O-257AA)
MIL-PRF-19500/705
5M-1994.
O-257AA.
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Untitled
Abstract: No abstract text available
Text: PD-94313D IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed Operation 3 kHz - 8 kHz High Operating Frequency Switching-loss Rating includes all "tail" losses
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PD-94313D
IRG4MC30F
O-254AA.
MIL-PRF-19500
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Untitled
Abstract: No abstract text available
Text: VND830LSP Double channel high-side driver Features Type RDS on IOUT VCC VND830LSP 60 mΩ(1) 18 A(1) 36 V 10 1. Per each channel. 1 PowerSO-10 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection
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VND830LSP
PowerSO-10
VND830LSP
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st 9431
Abstract: ISO7637 VND830LSP VND830LSP13TR
Text: VND830LSP Double channel high-side driver Features Type RDS on IOUT VCC VND830LSP 60 mΩ(1) 18 A(1) 36 V 10 1. Per each channel. 1 PowerSO-10 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection
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VND830LSP
PowerSO-10
VND830LSP
st 9431
ISO7637
VND830LSP13TR
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Untitled
Abstract: No abstract text available
Text: VND830LSP Double channel high-side driver Features Type RDS on IOUT VCC VND830LSP 60 mΩ(1) 18 A(1) 36 V 10 1. Per each channel. 1 PowerSO-10 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection
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VND830LSP
PowerSO-10
VND830LSP
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Untitled
Abstract: No abstract text available
Text: PD -94313 IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses
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IRG4MC30F
O-254AA.
MIL-PRF-19500
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IRG4MC30F
Abstract: No abstract text available
Text: PD -94313C IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses
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-94313C
IRG4MC30F
O-254AA.
MIL-PRF-19500
IRG4MC30F
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Untitled
Abstract: No abstract text available
Text: PD -94313C IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses
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-94313C
IRG4MC30F
O-254AA.
MIL-PRF-19500
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IRG4MC30F
Abstract: No abstract text available
Text: PD -94313B IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses
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-94313B
IRG4MC30F
O-254AA.
MIL-PRF-19500
IRG4MC30F
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st 9431
Abstract: No abstract text available
Text: VND830LSP Double channel high-side driver Features Type RDS on IOUT VCC VND830LSP 60 mΩ(1) 18 A(1) 36 V ) s ( ct 10 1. Per each channel. 1 CMOS compatible inputs • Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection
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VND830LSP
PowerSO-10
VND830LSP
VND830
st 9431
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IRF7476
Abstract: TH 2190 mosfet F7101 IRF7101 MS-012AA
Text: PD - 94311 IRF7476 HEXFET Power MOSFET Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications. l Power Management for Netcom, Computing and Portable Applications. Benefits l Ultra-Low Gate Impedance
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IRF7476
EIA-481
IA-541.
IRF7476
TH 2190 mosfet
F7101
IRF7101
MS-012AA
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Untitled
Abstract: No abstract text available
Text: PD - 94318 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY57133CMSE 130V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number IRHY57133CMSE Radiation Level RDS(on) 100K Rads (Si) 0.09Ω ID 18A* T0-257AA International Rectifier’s R5TM technology provides
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O-257AA)
IRHY57133CMSE
T0-257AA
MIL-STD-750,
MlL-STD-750,
O-257AA
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str 5707
Abstract: 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703
Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = (any letter) Revision, see detail specification F = Active pull-down device (BiMOS only) -1 = Selected version, see detail specification
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MS-001,
MS-010,
MS-011)
MS-010)
MS-018)
str 5707
2SC 8050
scr ky 202
TRANSISTOR J 5804 NPN
str 6709
TRANSISTOR J 5804
2sc 8188
lr 2905 transistor
2sc 8187
2SD 5703
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IRHY593230CM
Abstract: IRHY597230CM T0-257AA
Text: PD - 94319A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597230CM 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597230CM 100K Rads (Si) 0.515Ω -8.0A IRHY593230CM 300K Rads (Si) 0.515Ω -8.0A International Rectifier’s R5TM technology provides
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4319A
O-257AA)
IRHY597230CM
IRHY597230CM
IRHY593230CM
5M-1994.
O-257AA.
T0-257AA
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Untitled
Abstract: No abstract text available
Text: PD - 94319B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597230CM 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597230CM 100K Rads (Si) 0.515Ω -8.0A IRHY593230CM 300K Rads (Si) 0.515Ω -8.0A International Rectifier’s R5 TM technology provides
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94319B
O-257AA)
IRHY597230CM
IRHY597230CM
IRHY593230CM
5M-1994.
O-257AA.
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IRHY593230CM
Abstract: IRHY597230CM T0-257AA
Text: PD - 94319B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597230CM 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597230CM 100K Rads (Si) 0.515Ω -8.0A IRHY593230CM 300K Rads (Si) 0.515Ω -8.0A International Rectifier’s R5 TM technology provides
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94319B
O-257AA)
IRHY597230CM
IRHY597230CM
IRHY593230CM
5M-1994.
O-257AA.
T0-257AA
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B5218
Abstract: uc 1201a 14001-1
Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. N orth C entral N o rth w e st N orth E a s t 20 M all R oad S u ite 410 B u rlin g to n, M A 01803 617 2 7 3 -4 8 88 F A X (6 1 7 )2 7 3 -9 3 6 3 901 W a rre n v ille R oad S uite 120 Lisle, IL 6 0 5 3 2 -13 5 9
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251-B574
B5218
uc 1201a
14001-1
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jd 1803 b 107
Abstract: jd 1803 IC jd 1803 19 B sung wei jd 1803 b jd 1803 b 106 94-4980 bay trail l samsung 943 ky 708
Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North Central Northwest Northeast 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: 708 775-1050 FAX: (708) 775-1058 3655 North First Street San Jose, CA 95134 TEL: (408) 954-7000 FAX: (408) 954-7883 119 Russell Street
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Clin-1205
jd 1803 b 107
jd 1803 IC
jd 1803 19 B
sung wei
jd 1803 b
jd 1803 b 106
94-4980
bay trail l
samsung 943
ky 708
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CH-5430
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.SA North Central Northwest Northeast 1 19 R ussell Street Littleton, M A 0 1 4 6 0 TE L: 5 0 8 4 8 6 -0 7 0 0 FA X : (5 0 8 ) 4 8 6 -8 2 0 9 3 0 0 Park Boulevard Suite 2 1 0 Itasca, IL 6 0 1 4 3 -2 6 3 6 TEL: (7 0 8 ) 7 7 5 -1 0 5 0
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124th
105th
CH-5430
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240-22
Abstract: 84107
Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North Central Northwest 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: 708 775-1050 FAX: (708) 775-1058 3655 North First Street San Jose, CA 95134 TEL: (408) 954-7000 FAX: (408) 954-7883 Southwest South Central
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516J-273-5500
240-22
84107
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sung wei
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North Central Northwest 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: 708 775-1050 FAX: (708)775-1058 3655 North First Street San José, CA 95134 TEL: (408) 954-7000 FAX: (408) 954-7883 South Central Southwest
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