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    transistor 2N3906 smd 2A SOT23

    Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BC327-25 SMD TRANSISTOR BC337 SMD 2n3906 REPLACEMENT MMBT3094
    Text: Small Signal Transistors Industry Standard BF722 BF723 BFN38 CZTA42 CZTA92 KSA539 KSA643 KSA733 KSC1623 KSC815 MMBT3094 MMBT3906 MMBT4401 MMBT4403 MMBTA42 ST Nearest ST Replacement Industry Standard BF720 BF721 BF720 STZTA42 STZTA92 MMBTA92 MPSA42 MPSA92 MSB709


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    PDF BF722 BF723 BFN38 CZTA42 CZTA92 KSA539 KSA643 KSA733 KSC1623 KSC815 transistor 2N3906 smd 2A SOT23 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BC327-25 SMD TRANSISTOR BC337 SMD 2n3906 REPLACEMENT MMBT3094

    2N2905A

    Abstract: No abstract text available
    Text: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-040 FAX: (617) 924-1235 2N2905A Features • • • • 60 Volts 600 mAmps Meets MIL-S-19500/290 Collector-Base Voltage 60V Collector Current: 600 mA Fast Switching 345 nS PNP BIPOLAR TRANSISTOR Maximum Ratings


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    PDF 2N2905A MIL-S-19500/290 MSC0278A -15mAdc) 2N2905A

    2N2905AT1

    Abstract: No abstract text available
    Text: 2N2905AHR PNP low power transistors for Hi-Rel applications Features • Low voltage ■ Low current ■ Linear gain characteristics Applications ■ Low current switching ■ Linear preamplifier TO-39 Description The 2N2905AHR is a silicon planar epitaxial PNP


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    PDF 2N2905AHR 2N2905AHR 2N2905AT1 2N290

    2N2905AT1

    Abstract: 2N2905AHR st marking code
    Text: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V - 0.6 A Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL


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    PDF 2N2905AHR 2N2905AHR 2N2905AT1 st marking code

    2N2905

    Abstract: No abstract text available
    Text: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V, 0.6 A Datasheet — production data Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics


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    PDF 2N2905AHR 2N2905AHR 2N2905

    2N2905At

    Abstract: No abstract text available
    Text: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V, 0.6 A Datasheet — production data Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics


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    PDF 2N2905AHR 2N2905AHR 2N2905At

    Untitled

    Abstract: No abstract text available
    Text: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V - 0.6 A Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL


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    PDF 2N2905AHR 2N2905AHR

    2n2907a

    Abstract: 2N2907A st st 2n2907a ST BEX 2n2905a st
    Text: 2N2905A 2N2907A  SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 for 2N2905A and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose


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    PDF 2N2905A 2N2907A 2N2907A 2N2905A) 2N2907A) 2N2907A st st 2n2907a ST BEX 2n2905a st

    2N2905

    Abstract: TRANSISTOR 2n2905 2n2219a npn transistor 2N2219 2N2219A 2N2905A ST 2N2905 2n2905 philips 2N2905 2N2219 2N2905 2N2219 application
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N2905; 2N2905A PNP switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification PNP switching transistors


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    PDF M3D111 2N2905; 2N2905A 2N2219 2N2219A. SCA54 117047/00/02/pp8 2N2905 TRANSISTOR 2n2905 2n2219a npn transistor 2N2219A 2N2905A ST 2N2905 2n2905 philips 2N2905 2N2219 2N2905 2N2219 application

    2n2905 2n2907

    Abstract: 2n2907 2N2905 equivalent 2N2905 st 2n2907 to-18 ST 2N2905 transistor 2N2905 2N2905 transistor 2N2907 PNP Transistor 2N2907 application notes
    Text: 2N2905 2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 for 2N2905 and in Jedec TO-18 (for 2N2907) metal case. They are designed for high speed saturated switching and general purpose application.


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    PDF 2N2905 2N2907 2N2905 2N2907 2N2905) 2N2907) 2n2905 2n2907 2N2905 equivalent st 2n2907 to-18 ST 2N2905 transistor 2N2905 2N2905 transistor 2N2907 PNP Transistor 2N2907 application notes

    2N2905A

    Abstract: 2N2907A 2N2905a equivalent 2N2907A diagram 2N2905A switch circuit M2N2905A 2N2907A PNP Transistor equivalent 2N2907A bex st
    Text: 2N2905A 2N2907A SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 for 2N2905A and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose


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    PDF 2N2905A 2N2907A 2N2905A 2N2907A 2N2905A) 2N2907A) 2N2905a equivalent 2N2907A diagram 2N2905A switch circuit M2N2905A 2N2907A PNP Transistor equivalent 2N2907A bex st

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage


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    PDF 2N2904 2N2905 C-120 2N2904 2905Rev 310303E

    2N2907A

    Abstract: 2N2907 2N2905a equivalent 2N2905A 2N2905A THOMSON 2N2906A 15mAIB 2N2907A THOMSON COMPONENTS 2N2907A diagram
    Text: 2N2905A 2N2907A GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec TO-39 for 2N2905A and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose


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    PDF 2N2905A 2N2907A 2N2905A 2N2907A 2N2905A) 2N2907A) 2N2906A 2N2907 2N2905a equivalent 2N2905A THOMSON 15mAIB 2N2907A THOMSON COMPONENTS 2N2907A diagram

    MMBR2857LT1

    Abstract: bcy59z 2N2222A zetex MICROSEMI 2N2222A MPSA96 BCY55 2N2907 PHILIPS SEMICONDUCTOR 2N2369 philips BC327BP BAV99 ON Semi
    Text: 145 Adams Avenue Hauppauge, NY 11788 Phone 631 435-1110 Fax (631) 435-1824 www.centralsemi.com/eol EOL –LIFE SUPPORT List as of: March 30, 2001 Central Semiconductor Corp. will continue to manufacture the discrete semiconductors included on this list as long as there is an industry demand. For an update of this list please contact your sales


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    PDF 1N961B 1N962B 5KE100CA TIP32A TIP32B TIP32C MMBR2857LT1 bcy59z 2N2222A zetex MICROSEMI 2N2222A MPSA96 BCY55 2N2907 PHILIPS SEMICONDUCTOR 2N2369 philips BC327BP BAV99 ON Semi

    MOTOROLA 2N5179

    Abstract: motorola 2N2219 motorola 2N2222A motorola mpq3904 MOTOROLA 2N2905A MJ3001 equivalent motorola 2N4427 motorola 2N2219A 2N3819 MOTOROLA motorola 2N3866
    Text: Central Semiconductor - Cross Reference Competitor Discontinued Part Replacements EOL Part # Manufacturer Name Central Semi Part # A12FR10 International Rectifier CR20-010R A12FR100 International Rectifier CR20-100R A12FR120 International Rectifier CR20-120R


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    PDF A12FR10 CR20-010R A12FR100 CR20-100R A12FR120 CR20-120R A12FR20 CR20-020R A12FR40 CR20-040R MOTOROLA 2N5179 motorola 2N2219 motorola 2N2222A motorola mpq3904 MOTOROLA 2N2905A MJ3001 equivalent motorola 2N4427 motorola 2N2219A 2N3819 MOTOROLA motorola 2N3866

    2N3819 MOTOROLA

    Abstract: mmbr2857lt1 bcy59z BCY55 MBS4993 2N2222a PHILIPS SEMICONDUCTOR MOTOROLA 1N4751A 2N2222A zetex 2C4209WP MMBR2857
    Text: EOL Life Support Program Revised: 3 May 2007 EOL Life Support Program Listing as of 05/03/07 EOL ITEM# MANUFACTURER NAME A12FR10 A12FR100 A12FR120 A12FR20 A12FR40 A12FR60 A12FR80 A12F10 A12F100 A12F120 A12F20 A12F40 A12F60 A12F80 A16FR10 A16FR100 A16FR120


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    PDF A12FR10 A12FR100 A12FR120 A12FR20 A12FR40 A12FR60 A12FR80 A12F10 A12F100 A12F120 2N3819 MOTOROLA mmbr2857lt1 bcy59z BCY55 MBS4993 2N2222a PHILIPS SEMICONDUCTOR MOTOROLA 1N4751A 2N2222A zetex 2C4209WP MMBR2857

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


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    PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E

    Untitled

    Abstract: No abstract text available
    Text: Microsemi waienmwn, mm m 580 Pleasant St. Watertown, MA 02172 PH: 617 926-040 FAX: (617) 924-1235 2N2905A Features • • • • 60 Volts 600 mAmps Meets MIL-S-19500/290 Collector-Base Voltage 60V Collector Current: 600 mA Fast Switching 345 nS PNP BIPOLAR


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    PDF 2N2905A MIL-S-19500/290 100kH 100kHz -15mAdc) MSC0278A

    Untitled

    Abstract: No abstract text available
    Text: Microsemi waienmwn, mm m 580 P leasant St. W a te rto w n , M A 02172 PH: 617 926-040 FAX: (617) 924-1235 2N2905A Features • • • • 60 Volts 600 mAmps Meets MIL-S-19500/290 Collector-Base Voltage 60V Collector Current: 600 mA Fast Switching 345 nS


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    PDF 2N2905A MIL-S-19500/290 100kH MSC0278A

    2N2905

    Abstract: 2N2905A 2n290a 2N2904 transistor 2N2904A transistor 2N2905 2N2904 PNP Transistor TRANSISTOR 2n2904 2N290 2N2905 transistor
    Text: Data Sheet ^ - - 2N2904 2N2904A 2N2905 2N2905A » T M COilFPH H II Sem iconductor Corp. . 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 PNP S i l i c o n T r a n s i s t o r JEDEC T0-39 Case Manufacturers of World Class Discrete Semiconductors


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    PDF 2N2904 2N2904A 2N2905 2N2905A 2N2904 2N2905 500mA, 2N2905A 2n290a 2N2904 transistor 2N2904A transistor 2N2905 2N2904 PNP Transistor TRANSISTOR 2n2904 2N290 2N2905 transistor

    2sc 1177

    Abstract: K04A 2N2905
    Text: SEMICONDUCTOR TECHNICAL DATA 2N2904JAN, JTX, JTXV 2N2904AJAN, JTX, JTXV 2N2905JAN, JTX, JTXV 2N2905AJAN, JTX, JTXV, JANS CRYSTAL OfJCS 2805 Veterans Highway Processed per MIL-S-19500 290 Suite 14 PNP Silicon Small-Signal Transistors Ronkof kor^a N Y . 1177«


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    PDF 2N2904JAN, 2N2904AJAN, 2N2905JAN, 2N2905AJAN, MIL-S-19500 2sc 1177 K04A 2N2905

    st 2n2907 to-18

    Abstract: P008B 2N2904 2n2905 ST
    Text: SGS-THOMSON RaDSMULKEin^OMlDei 2N2904/2N2905 2N2906/2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES D E S C R IP T IO N The 2N2904, 2N2905, 2N2906 and 2N2907 are si­ licon planar epitaxial PNP transistors in Jedec TO39 for 2N2904, 2N2905 and in Jedec TO-18 (for


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    PDF 2N2904, 2N2905, 2N2906 2N2907 2N2905) 2N2907) 2N2904/2N2905 2N2906/2N2907 st 2n2907 to-18 P008B 2N2904 2n2905 ST

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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