BSS138
Abstract: Q67000-S566 E6327 Q67000-S216 marking BSs
Text: BSS 138 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 138 50 V 0.22 A 3.5 Ω SOT-23 SSs Type BSS 138 BSS 138 Ordering Code Q67000-S566
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OT-23
Q67000-S566
Q67000-S216
E6327
E6433
BSS138
Q67000-S566
E6327
Q67000-S216
marking BSs
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bss138
Abstract: marking BSs marking "BSs" E6327 Q67000-S216 Q67000-S566 marking BSs sot23 marking code SOT23 SSs
Text: BSS 138 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 138 50 V 0.22 A 3.5 Ω SOT-23 SSs Type BSS 138 BSS 138 Ordering Code Q67000-S566
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OT-23
Q67000-S566
Q67000-S216
E6327
E6433
Sep-13-1996
bss138
marking BSs
marking "BSs"
E6327
Q67000-S216
Q67000-S566
marking BSs sot23
marking code SOT23 SSs
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transistor P18 FET
Abstract: PA1954NL KFH-032-6 TEPSLV0J227M c86 sot23 PA0955 transistor SMD p16 PA1382 Q12-Q15 DC888A
Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 888A-B 36V-72VIN, ISOLATED SYNCHRONOUS FORWARD LTC3725/LTC3706 DESCRIPTION Demonstration circuit 888A-B is a high power isolated synchronous forward converter featuring the LTC3725 and LTC3706. When powered from a 3672V input, a single DC888A-B provides an isolated
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88A-B
6V-72VIN,
LTC3725/LTC3706
88A-B
LTC3725
LTC3706.
DC888A-B
DC888A
250kHz
P1-10
transistor P18 FET
PA1954NL
KFH-032-6
TEPSLV0J227M
c86 sot23
PA0955
transistor SMD p16
PA1382
Q12-Q15
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nec 2501
Abstract: DIODE FS 604 c86 sot23 CRCW12065R10 CAP 10nF 200V 0603 2501-2-00-80-00-00-07-0 transistor P18 FET 2N7002-SOT23 AC Transformer 50A 100V LTC3706
Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 888A-A 36V-72VIN, ISOLATED SYNCHRONOUS FORWARD LTC3725/LTC3706 DESCRIPTION Demonstration circuit 888A-A is a high power isolated synchronous forward converter featuring the LTC3725 and LTC3706. When powered from a 3672V input, a single DC888A-A provides an isolated
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88A-A
6V-72VIN,
LTC3725/LTC3706
88A-A
LTC3725
LTC3706.
DC888A-A
DC888A
250kHz
J1-10
nec 2501
DIODE FS 604
c86 sot23
CRCW12065R10
CAP 10nF 200V 0603
2501-2-00-80-00-00-07-0
transistor P18 FET
2N7002-SOT23
AC Transformer 50A 100V
LTC3706
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06035C103KAT2A
Abstract: E4 PNP SMD TRANSISTOR transistor P18 FET 1nF, 50V, AVX Corporation c86 sot23 Cap X7R 1210 T4 LTC3706EGN pa1494.242 TMK325BJ475KN 16TQC68M
Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 888A-C 36V-72VIN, ISOLATED SYNCHRONOUS FORWARD LTC3725/LTC3706 DESCRIPTION Demonstration circuit 888A-C is a high power isolated synchronous forward converter featuring the LTC3725 and LTC3706. When powered from a 3672V input, a single DC888A-C provides an isolated
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88A-C
6V-72VIN,
LTC3725/LTC3706
88A-C
LTC3725
LTC3706.
DC888A-C
DC888A
250kHz
J1-10
06035C103KAT2A
E4 PNP SMD TRANSISTOR
transistor P18 FET
1nF, 50V, AVX Corporation
c86 sot23
Cap X7R 1210 T4
LTC3706EGN
pa1494.242
TMK325BJ475KN
16TQC68M
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. APE8800A 300mA LOW DROPOUT LINEAR REGULATOR WITH SHUTDOWN FEATURES DESCRIPTIOON Low Dropout Voltage of 250mV at 300mA Guaranteed 300mA Output Current Very Low Quiescent Current at 30µA ±2% Output Voltage Accuracy Needs Only 1µF Capacitor for Stability
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APE8800A
300mA
250mV
300mA
OT-23-5L
TSOT-23-5L
APE8800A
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. APE8800A 300mA LOW DROPOUT LINEAR REGULATOR WITH SHUTDOWN FEATURES DESCRIPTIOON Low Dropout Voltage of 250mV at 300mA Guaranteed 300mA Output Current Very Low Quiescent Current at 30µA ±2% Output Voltage Accuracy Needs Only 1µF Capacitor for Stability
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250mV
300mA
OT-23-5L
TSOT-23-5L
APE8800A
APE8800A
250mV.
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. APE8800A 300mA LOW DROPOUT LINEAR REGULATOR WITH SHUTDOWN FEATURES DESCRIPTIOON Low Dropout Voltage of 250mV at 300mA Guaranteed 300mA Output Current Very Low Quiescent Current at 30µA ±2% Output Voltage Accuracy Needs Only 1µF Capacitor for Stability
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250mV
300mA
OT-23-5L
TSOT-23-5L
APE8800A
APE8800A
250mV.
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R1B marking code
Abstract: 431g
Text: Advanced Power Electronics Corp. AP431-HF-3 Adjustable Precision Shunt Regulator Description Features Precision reference voltage 2.495V ±1% Sink current capability: 100mA. Minimum cathode current for regulation: 0.4mA Fast turn-on response. Low dynamic output impedance: 0.5Ω max.
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AP431-HF-3
100mA.
MIL-STD-883D)
OT-89,
OT-23,
AP431-3
AP431
OT-89
R1B marking code
431g
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marking code AV sot-23
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP432-3 Low Voltage Adjustable Shunt Regulators Description Features Precision reference voltage B : 1.24V ±1% A : 1.24V ±0.5% Sink current capability: 200mA. Minimum cathode current for regulation: 150µA Equivalent full-range temp coefficient: 30 ppm/°C
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AP432-3
200mA.
OT-89,
OT-23,
OT-23-5L,
AP432-3
AP432
OT-89
marking code AV sot-23
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP431A-HF-3 Adjustable Precision Shunt Regulators Description Features Precision reference voltage B : 2.495V ±1% A : 2.495V ±0.5% Sink current capability: 200mA. Minimum cathode current for regulation: 300µA Equivalent full-range temp coefficient: 30 ppm/°C
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AP431A-HF-3
200mA.
OT-89,
OT-23,
OT-23-5L,
AP431A-HF-3
OT-89
AP431A
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Diode SOT-23 marking JE
Abstract: sstpad5 SOT23 JE SSs sot23 SOT-23 marking JE JE SOT23 diode TO-18 package
Text: SSTPAD5 SERIES U T !S*sSs Low-Leakage Pico-Amp Diodes_ Ttie SSTPAD5 Series of low-leakage diodes provides a superior alternative to conventional diode technology when reverse current leakage must be minimized. Its SOT-23 package allows designers to maximize circuit
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OT-23
SSTPAD100
OT-23
SSTPAD100
Diode SOT-23 marking JE
sstpad5
SOT23 JE
SSs sot23
SOT-23 marking JE
JE SOT23
diode TO-18 package
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Untitled
Abstract: No abstract text available
Text: B U R R - B R O W N <i [ OPA651 ] i i S j Sss Wideband, Low Power Voltage Feedback OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • STABLE IN GAINS: > 2V/V The OPA651 is a low power, wideband voltage feed back operational amplifier. It features a bandwidth at
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OPA651
OPA651
470MHz
12-bit
-78dB
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SmD TRANSISTOR a77
Abstract: smd marking code SSs
Text: BSS138 In fin e o n technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level ' ^GS th = 0.8.2.0V Pin 1 Pin 3 Pin 2 S G Type Vbs b ^D S (o n ) Package Marking BSS 138 50 V 0.22 A 3.5 Q SOT-23 SSs Type BSS 138 BSS 138
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BSS138
OT-23
Q67000-S566
Q67000-S216
E6327
E6433
fopu22
S35bQ5
Q133777
SQT-89
SmD TRANSISTOR a77
smd marking code SSs
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IRF 1450
Abstract: km 1667 km 1667 datasheet mmic marking code j
Text: SIEMENS CMY 91 GaAs MMIC Datasheet * GaAs mixer with integrated IF-amplifier for mobile communication * Frequency range 0.8 GHz to 2.5 GHz * Very low power consumption 1 mA typ. * Single positive supply voltage * Operating voltage range: 2.7 to 6 V * Miniature package MW6 based on SOT23
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Q62702-M9
01-coil;
B82412-A3221-M
900MHz
1450MHz
1900MHz
IRF 1450
km 1667
km 1667 datasheet
mmic marking code j
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P-Channel — Depletion 2SOURCE M MBFJ177LT1 MAXIMUM RATINGS Rating Symbol Value Unit Vd G 25 Vdc v GS r -2 5 Vdc Symbol Max Unit Total Device Dissipation FR-5 BoardO) Ta = 25-C Derate above 25°C PD 225
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MBFJ177LT1
OT-23
O-236AB)
MMBFJ177LT1
15Vdc,
15Vdc)
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sot-223 code marking
Abstract: marking sSH sot-23 SAs SOT23 marking code SOT23 SSi smd marking code SSs code marking ssi sot-23 marking code SOT23 SSs MARKING code SSi SOT23 SAs SOT-23 marking marking BSs sot23
Text: S IEM E N S SIPMOS Kleinsignaltransistoren SIPMOS® Small-Signal Transistors SMD-Bauformen SMD types Typ Type Vbs m ax Was(th) ^D(max) ^D S(on)m ax Ptot V V mA n mW N-Kanal-Anreicherungstypen Bestellnummer Ordering code Gehäuse Package Stempel Marking Bild
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Q67000-S220
Q67000-S066
Q67000-S273
Q62702-S566
OT-223
OT-23
Q67000-S068
OT-223
sot-223 code marking
marking sSH sot-23
SAs SOT23
marking code SOT23 SSi
smd marking code SSs
code marking ssi sot-23
marking code SOT23 SSs
MARKING code SSi SOT23
SAs SOT-23 marking
marking BSs sot23
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transistor D 2395
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTA13LT1 M M BTA14LT1* Darlington A m plifier Transistors NPN Silicon 'Motorola Preferred Device COLLECTOR 3 EMITTER 2 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol
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MMBTA13LT1
BTA14LT1*
OT-23
O-236AB)
b3b7255
MMBTA13LT1
MMBTA14LT1
wmb3b72SS
transistor D 2395
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Untitled
Abstract: No abstract text available
Text: SILICON HOT-CARRIER DIODE SCHOTTKY BARRIER DIODE . designed primarily for UHF mixer applications but suitable also for use in detector and ultra-fast switching circuits. Supplied in an inexpensive plas tic package for low-cost, high-volume consum er requirements. A lso avail
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MBD101*
MMBD101LT1*
O-226AC)
OT-23
O-236AB)
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marking code SOT23 SSs
Abstract: CMPZDC18V CMPZDC3V6 CMPZDC3V0 CMPZDC8V2 zener diode 3.2 CCZ2 SSs sot23 CMPZDC47V CMPZDC20V
Text: Central“ CMPZDC2V4 THRU CMPZDC47V Semiconductor Corp. DUAL ZENER DIODE 2.4 VOLTS THRU 47 VOLTS 350mW DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZDC2V4 Series silicon dual zener diode is a highly quality voltage regulator, connected in a common cathode configuration, for use in
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CMPZDC47V
350mW
OT-23
OT-23
04-November
marking code SOT23 SSs
CMPZDC18V
CMPZDC3V6
CMPZDC3V0
CMPZDC8V2
zener diode 3.2
CCZ2
SSs sot23
CMPZDC20V
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bss138
Abstract: SSs sot-23 022ra marking BSs sot23 siemens
Text: SIEMENS B S S 138 SIPMOS Small-Signai Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 Type BSS 138 VDS 50 V k) 0.22 A Type BSS 138 BSS 138 Ordering Code Q67000-S566 Q67000-S216 ^DS(on) 3.5 Q Pin 3 S G Package
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OT-23
Q67000-S566
Q67000-S216
E6327
E6433
OT-23
GPS05557
bss138
SSs sot-23
022ra
marking BSs sot23 siemens
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marking BSs sot23 siemens n-channel
Abstract: 4q diode sot23 diode marking code MU sot23 paz marking BSs sot23 siemens
Text: VN2106 VN2110 Gà Supertax inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss / ^DS<ON b v dgs max) TO-92 20 Terminal Ceramic LCC Diet TO-236AB* Product marking for SOT-23: 60V 4Q VN2106N3 VN2106NF VN2106ND
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VN2106
VN2110
VN2106N3
VN2110N3
VN2106NF
VN2110NF
VN2106ND
VN2110ND
O-236AB*
VN2110K1
marking BSs sot23 siemens n-channel
4q diode sot23
diode marking code MU
sot23 paz
marking BSs sot23 siemens
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FDC6303N
Abstract: No abstract text available
Text: F A IR C H IL D Au9ust 1997 SEMICONDUCTOR^ FDC6303N Digital FET, Dual N-Channel General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchiltfe proprietary, high cell density, DMOS technology. This very high density
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FDC6303N
FOC6303N
34bTb74
FDC6303N
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CDS2C05GTA
Abstract: CDA5C16GTH usblc6-4sc6 low leakage tvs diode sod323 CDS3C05GTA CDS3C09GTA CDS3C15GTA ESDA14V2L PESD12VS1UB H SOD723
Text: EPCOS Sample Kit 2007 fffll CeraDiode for ESD Protection w w w .e p c o s .c o m W hat is a CeraDiode? • A CeraDiode is a ceramic component for the ESD protection of data, audio and video lines, ICs and I/O ports in electronic devices. ■ A CeraDiode is a cost effective alternative to semiconductor protection devices
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CDS2C15GTH
OD-723
CDS2C16GTH
CDS3C16GTH
OD-523
CDS3C30GTH
CDS4C16GTH
OD-323
CDS2C05GTA
CDA5C16GTH
usblc6-4sc6
low leakage tvs diode sod323
CDS3C05GTA
CDS3C09GTA
CDS3C15GTA
ESDA14V2L
PESD12VS1UB
H SOD723
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