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    SSS SOT23 Search Results

    SSS SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL28114SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL28113SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation

    SSS SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSS138

    Abstract: Q67000-S566 E6327 Q67000-S216 marking BSs
    Text: BSS 138 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 138 50 V 0.22 A 3.5 Ω SOT-23 SSs Type BSS 138 BSS 138 Ordering Code Q67000-S566


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    PDF OT-23 Q67000-S566 Q67000-S216 E6327 E6433 BSS138 Q67000-S566 E6327 Q67000-S216 marking BSs

    bss138

    Abstract: marking BSs marking "BSs" E6327 Q67000-S216 Q67000-S566 marking BSs sot23 marking code SOT23 SSs
    Text: BSS 138 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 138 50 V 0.22 A 3.5 Ω SOT-23 SSs Type BSS 138 BSS 138 Ordering Code Q67000-S566


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    PDF OT-23 Q67000-S566 Q67000-S216 E6327 E6433 Sep-13-1996 bss138 marking BSs marking "BSs" E6327 Q67000-S216 Q67000-S566 marking BSs sot23 marking code SOT23 SSs

    transistor P18 FET

    Abstract: PA1954NL KFH-032-6 TEPSLV0J227M c86 sot23 PA0955 transistor SMD p16 PA1382 Q12-Q15 DC888A
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 888A-B 36V-72VIN, ISOLATED SYNCHRONOUS FORWARD LTC3725/LTC3706 DESCRIPTION Demonstration circuit 888A-B is a high power isolated synchronous forward converter featuring the LTC3725 and LTC3706. When powered from a 3672V input, a single DC888A-B provides an isolated


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    PDF 88A-B 6V-72VIN, LTC3725/LTC3706 88A-B LTC3725 LTC3706. DC888A-B DC888A 250kHz P1-10 transistor P18 FET PA1954NL KFH-032-6 TEPSLV0J227M c86 sot23 PA0955 transistor SMD p16 PA1382 Q12-Q15

    nec 2501

    Abstract: DIODE FS 604 c86 sot23 CRCW12065R10 CAP 10nF 200V 0603 2501-2-00-80-00-00-07-0 transistor P18 FET 2N7002-SOT23 AC Transformer 50A 100V LTC3706
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 888A-A 36V-72VIN, ISOLATED SYNCHRONOUS FORWARD LTC3725/LTC3706 DESCRIPTION Demonstration circuit 888A-A is a high power isolated synchronous forward converter featuring the LTC3725 and LTC3706. When powered from a 3672V input, a single DC888A-A provides an isolated


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    PDF 88A-A 6V-72VIN, LTC3725/LTC3706 88A-A LTC3725 LTC3706. DC888A-A DC888A 250kHz J1-10 nec 2501 DIODE FS 604 c86 sot23 CRCW12065R10 CAP 10nF 200V 0603 2501-2-00-80-00-00-07-0 transistor P18 FET 2N7002-SOT23 AC Transformer 50A 100V LTC3706

    06035C103KAT2A

    Abstract: E4 PNP SMD TRANSISTOR transistor P18 FET 1nF, 50V, AVX Corporation c86 sot23 Cap X7R 1210 T4 LTC3706EGN pa1494.242 TMK325BJ475KN 16TQC68M
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 888A-C 36V-72VIN, ISOLATED SYNCHRONOUS FORWARD LTC3725/LTC3706 DESCRIPTION Demonstration circuit 888A-C is a high power isolated synchronous forward converter featuring the LTC3725 and LTC3706. When powered from a 3672V input, a single DC888A-C provides an isolated


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    PDF 88A-C 6V-72VIN, LTC3725/LTC3706 88A-C LTC3725 LTC3706. DC888A-C DC888A 250kHz J1-10 06035C103KAT2A E4 PNP SMD TRANSISTOR transistor P18 FET 1nF, 50V, AVX Corporation c86 sot23 Cap X7R 1210 T4 LTC3706EGN pa1494.242 TMK325BJ475KN 16TQC68M

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. APE8800A 300mA LOW DROPOUT LINEAR REGULATOR WITH SHUTDOWN FEATURES DESCRIPTIOON Low Dropout Voltage of 250mV at 300mA Guaranteed 300mA Output Current Very Low Quiescent Current at 30µA ±2% Output Voltage Accuracy Needs Only 1µF Capacitor for Stability


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    PDF APE8800A 300mA 250mV 300mA OT-23-5L TSOT-23-5L APE8800A

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. APE8800A 300mA LOW DROPOUT LINEAR REGULATOR WITH SHUTDOWN FEATURES DESCRIPTIOON Low Dropout Voltage of 250mV at 300mA Guaranteed 300mA Output Current Very Low Quiescent Current at 30µA ±2% Output Voltage Accuracy Needs Only 1µF Capacitor for Stability


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    PDF 250mV 300mA OT-23-5L TSOT-23-5L APE8800A APE8800A 250mV.

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. APE8800A 300mA LOW DROPOUT LINEAR REGULATOR WITH SHUTDOWN FEATURES DESCRIPTIOON Low Dropout Voltage of 250mV at 300mA Guaranteed 300mA Output Current Very Low Quiescent Current at 30µA ±2% Output Voltage Accuracy Needs Only 1µF Capacitor for Stability


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    PDF 250mV 300mA OT-23-5L TSOT-23-5L APE8800A APE8800A 250mV.

    R1B marking code

    Abstract: 431g
    Text: Advanced Power Electronics Corp. AP431-HF-3 Adjustable Precision Shunt Regulator Description Features Precision reference voltage 2.495V ±1% Sink current capability: 100mA. Minimum cathode current for regulation: 0.4mA Fast turn-on response. Low dynamic output impedance: 0.5Ω max.


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    PDF AP431-HF-3 100mA. MIL-STD-883D) OT-89, OT-23, AP431-3 AP431 OT-89 R1B marking code 431g

    marking code AV sot-23

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP432-3 Low Voltage Adjustable Shunt Regulators Description Features Precision reference voltage B : 1.24V ±1% A : 1.24V ±0.5% Sink current capability: 200mA. Minimum cathode current for regulation: 150µA Equivalent full-range temp coefficient: 30 ppm/°C


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    PDF AP432-3 200mA. OT-89, OT-23, OT-23-5L, AP432-3 AP432 OT-89 marking code AV sot-23

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP431A-HF-3 Adjustable Precision Shunt Regulators Description Features Precision reference voltage B : 2.495V ±1% A : 2.495V ±0.5% Sink current capability: 200mA. Minimum cathode current for regulation: 300µA Equivalent full-range temp coefficient: 30 ppm/°C


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    PDF AP431A-HF-3 200mA. OT-89, OT-23, OT-23-5L, AP431A-HF-3 OT-89 AP431A

    Diode SOT-23 marking JE

    Abstract: sstpad5 SOT23 JE SSs sot23 SOT-23 marking JE JE SOT23 diode TO-18 package
    Text: SSTPAD5 SERIES U T !S*sSs Low-Leakage Pico-Amp Diodes_ Ttie SSTPAD5 Series of low-leakage diodes provides a superior alternative to conventional diode technology when reverse current leakage must be minimized. Its SOT-23 package allows designers to maximize circuit


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    PDF OT-23 SSTPAD100 OT-23 SSTPAD100 Diode SOT-23 marking JE sstpad5 SOT23 JE SSs sot23 SOT-23 marking JE JE SOT23 diode TO-18 package

    Untitled

    Abstract: No abstract text available
    Text: B U R R - B R O W N <i [ OPA651 ] i i S j Sss Wideband, Low Power Voltage Feedback OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • STABLE IN GAINS: > 2V/V The OPA651 is a low power, wideband voltage feed­ back operational amplifier. It features a bandwidth at


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    PDF OPA651 OPA651 470MHz 12-bit -78dB

    SmD TRANSISTOR a77

    Abstract: smd marking code SSs
    Text: BSS138 In fin e o n technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level ' ^GS th = 0.8.2.0V Pin 1 Pin 3 Pin 2 S G Type Vbs b ^D S (o n ) Package Marking BSS 138 50 V 0.22 A 3.5 Q SOT-23 SSs Type BSS 138 BSS 138


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    PDF BSS138 OT-23 Q67000-S566 Q67000-S216 E6327 E6433 fopu22 S35bQ5 Q133777 SQT-89 SmD TRANSISTOR a77 smd marking code SSs

    IRF 1450

    Abstract: km 1667 km 1667 datasheet mmic marking code j
    Text: SIEMENS CMY 91 GaAs MMIC Datasheet * GaAs mixer with integrated IF-amplifier for mobile communication * Frequency range 0.8 GHz to 2.5 GHz * Very low power consumption 1 mA typ. * Single positive supply voltage * Operating voltage range: 2.7 to 6 V * Miniature package MW6 based on SOT23


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    PDF Q62702-M9 01-coil; B82412-A3221-M 900MHz 1450MHz 1900MHz IRF 1450 km 1667 km 1667 datasheet mmic marking code j

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P-Channel — Depletion 2SOURCE M MBFJ177LT1 MAXIMUM RATINGS Rating Symbol Value Unit Vd G 25 Vdc v GS r -2 5 Vdc Symbol Max Unit Total Device Dissipation FR-5 BoardO) Ta = 25-C Derate above 25°C PD 225


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    PDF MBFJ177LT1 OT-23 O-236AB) MMBFJ177LT1 15Vdc, 15Vdc)

    sot-223 code marking

    Abstract: marking sSH sot-23 SAs SOT23 marking code SOT23 SSi smd marking code SSs code marking ssi sot-23 marking code SOT23 SSs MARKING code SSi SOT23 SAs SOT-23 marking marking BSs sot23
    Text: S IEM E N S SIPMOS Kleinsignaltransistoren SIPMOS® Small-Signal Transistors SMD-Bauformen SMD types Typ Type Vbs m ax Was(th) ^D(max) ^D S(on)m ax Ptot V V mA n mW N-Kanal-Anreicherungstypen Bestellnummer Ordering code Gehäuse Package Stempel Marking Bild


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    PDF Q67000-S220 Q67000-S066 Q67000-S273 Q62702-S566 OT-223 OT-23 Q67000-S068 OT-223 sot-223 code marking marking sSH sot-23 SAs SOT23 marking code SOT23 SSi smd marking code SSs code marking ssi sot-23 marking code SOT23 SSs MARKING code SSi SOT23 SAs SOT-23 marking marking BSs sot23

    transistor D 2395

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTA13LT1 M M BTA14LT1* Darlington A m plifier Transistors NPN Silicon 'Motorola Preferred Device COLLECTOR 3 EMITTER 2 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol


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    PDF MMBTA13LT1 BTA14LT1* OT-23 O-236AB) b3b7255 MMBTA13LT1 MMBTA14LT1 wmb3b72SS transistor D 2395

    Untitled

    Abstract: No abstract text available
    Text: SILICON HOT-CARRIER DIODE SCHOTTKY BARRIER DIODE . designed primarily for UHF mixer applications but suitable also for use in detector and ultra-fast switching circuits. Supplied in an inexpensive plas­ tic package for low-cost, high-volume consum er requirements. A lso avail­


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    PDF MBD101* MMBD101LT1* O-226AC) OT-23 O-236AB)

    marking code SOT23 SSs

    Abstract: CMPZDC18V CMPZDC3V6 CMPZDC3V0 CMPZDC8V2 zener diode 3.2 CCZ2 SSs sot23 CMPZDC47V CMPZDC20V
    Text: Central“ CMPZDC2V4 THRU CMPZDC47V Semiconductor Corp. DUAL ZENER DIODE 2.4 VOLTS THRU 47 VOLTS 350mW DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZDC2V4 Series silicon dual zener diode is a highly quality voltage regulator, connected in a common cathode configuration, for use in


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    PDF CMPZDC47V 350mW OT-23 OT-23 04-November marking code SOT23 SSs CMPZDC18V CMPZDC3V6 CMPZDC3V0 CMPZDC8V2 zener diode 3.2 CCZ2 SSs sot23 CMPZDC20V

    bss138

    Abstract: SSs sot-23 022ra marking BSs sot23 siemens
    Text: SIEMENS B S S 138 SIPMOS Small-Signai Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 Type BSS 138 VDS 50 V k) 0.22 A Type BSS 138 BSS 138 Ordering Code Q67000-S566 Q67000-S216 ^DS(on) 3.5 Q Pin 3 S G Package


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    PDF OT-23 Q67000-S566 Q67000-S216 E6327 E6433 OT-23 GPS05557 bss138 SSs sot-23 022ra marking BSs sot23 siemens

    marking BSs sot23 siemens n-channel

    Abstract: 4q diode sot23 diode marking code MU sot23 paz marking BSs sot23 siemens
    Text: VN2106 VN2110 Gà Supertax inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss / ^DS<ON b v dgs max) TO-92 20 Terminal Ceramic LCC Diet TO-236AB* Product marking for SOT-23: 60V 4Q VN2106N3 VN2106NF VN2106ND


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    PDF VN2106 VN2110 VN2106N3 VN2110N3 VN2106NF VN2110NF VN2106ND VN2110ND O-236AB* VN2110K1 marking BSs sot23 siemens n-channel 4q diode sot23 diode marking code MU sot23 paz marking BSs sot23 siemens

    FDC6303N

    Abstract: No abstract text available
    Text: F A IR C H IL D Au9ust 1997 SEMICONDUCTOR^ FDC6303N Digital FET, Dual N-Channel General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchiltfe proprietary, high cell density, DMOS technology. This very high density


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    PDF FDC6303N FOC6303N 34bTb74 FDC6303N

    CDS2C05GTA

    Abstract: CDA5C16GTH usblc6-4sc6 low leakage tvs diode sod323 CDS3C05GTA CDS3C09GTA CDS3C15GTA ESDA14V2L PESD12VS1UB H SOD723
    Text: EPCOS Sample Kit 2007 fffll CeraDiode for ESD Protection w w w .e p c o s .c o m W hat is a CeraDiode? • A CeraDiode is a ceramic component for the ESD protection of data, audio and video lines, ICs and I/O ports in electronic devices. ■ A CeraDiode is a cost effective alternative to semiconductor protection devices


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    PDF CDS2C15GTH OD-723 CDS2C16GTH CDS3C16GTH OD-523 CDS3C30GTH CDS4C16GTH OD-323 CDS2C05GTA CDA5C16GTH usblc6-4sc6 low leakage tvs diode sod323 CDS3C05GTA CDS3C09GTA CDS3C15GTA ESDA14V2L PESD12VS1UB H SOD723