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    SSM3K02F Search Results

    SSM3K02F Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSM3K02F Toshiba Metal oxide N-channel FET, Enhancement Type with diode Original PDF
    SSM3K02F Toshiba Scan PDF
    SSM3K02F Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Scan PDF
    SSM3K02FTE85LF Toshiba SSM3K02FTE85LF - Trans MOSFET N-CH 30V 1A 3-Pin S-Mini T/R Original PDF

    SSM3K02F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications Unit: mm • Small package • Low on resistance: Ron = 200 mΩ max (VGS = 4 V) : Ron = 250 mΩ (max) (VGS = 2.5 V) • Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)


    Original     		PDF SSM3K02F O-236MOD SC-59

    Untitled

    Abstract: No abstract text available
    Text: SSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications Unit: mm • Small package • Low on resistance: Ron = 200 mΩ max (VGS = 4 V) : Ron = 250 mΩ (max) (VGS = 2.5 V) • Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)


    Original     		PDF SSM3K02F O-236MOD SC-59

    SSM3K02F

    Abstract: No abstract text available
    Text: SSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications Unit: mm • Small package • Low on resistance: Ron = 200 mΩ max (VGS = 4 V) : Ron = 250 mΩ (max) (VGS = 2.5 V) • Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)


    Original     		PDF SSM3K02F O-236MOD SSM3K02F

    SSM3K02F

    Abstract: No abstract text available
    Text: SSM3K02F 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K02F ○ 高速スイッチング用 単位: mm • 小型パッケージで高密度実装に適しています。 • オン抵抗が低い。 : Ron = 200 mΩ max (VGS = 4 V)


    Original     		PDF SSM3K02F O-236MOD SC-59 SSM3K02F

    SSM3K02F

    Abstract: No abstract text available
    Text: SSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications Unit: mm • Small package · Low on resistance: Ron = 200 mΩ max (VGS = 4 V) : Ron = 250 mΩ (max) (VGS = 2.5 V) · Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)


    Original     		PDF SSM3K02F SC-59 O-236MOD SSM3K02F

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    SSM3K7002

    Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
    Text: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,


    Original     		PDF 3402C-0209 SSM3K7002 ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    TMP93C852F

    Abstract: T3G26P led TLGE TLGE123 TLGE125 TLGE158P TLGE159P TLGE160 TLGE174P TLGE247
    Text: ディスクリート応用技術第二担当 東芝半導体情報誌 アイ 今月の新製品情報 中電流スイッチング用途 3 100% 90% 045-890-2371 1997vol.665 小信号MOSFET（S-MOS） 80% ハイカレントファミリー 1997vol.665 月号


    Original     		PDF 1997vol 12max SC-59 044max SSM8K01FU SSM3K01F SSM3K02F 2SK2009 TMP93C852F T3G26P led TLGE TLGE123 TLGE125 TLGE158P TLGE159P TLGE160 TLGE174P TLGE247

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028

    8aa1

    Abstract: esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168
    Text: 小型面実装MOS FET S-MOSシリーズ ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAA1 12341D3AG BDJ0099A 8aa1 esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    tpc8118 equivalent replacement

    Abstract: SSM3J307T Zener diode smd 071 A01
    Text: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF BCE0082A tpc8118 equivalent replacement SSM3J307T Zener diode smd 071 A01

    TK12A10K3

    Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
    Text: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082D BCJ0082C TK12A10K3 tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3

    2fu smd transistor

    Abstract: Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT
    Text: Memory MOS Memory Lineup • Static RAM Capacity bits Device TC55V1001ASTI/ASRI 1M Organization Access time (ns) Power supply voltage (V) 128 K X 8 TC55V2001STI/SRI Package Pins TSOP(8 X 13.4) 32 TSOP- (10 X 14) 40 TSOP- (0.4 inch) 44 256 K X 8 TC55V020FT/TR


    Original     		PDF TC55V1001ASTI/ASRI TC55V2001STI/SRI TC55V020FT/TR TC55V2161FTI TC55V200FT/TR TC55V040FT/TR TC55V400FT/TR TC58VT TC75S55FU 2fu smd transistor Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT

    TPCA8077

    Abstract: TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A
    Text: 製品カタログ 2010-3 東芝半導体 製品カタログ MOSFET h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082C BCJ0082B TPCA8077 TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A

    SCS-70

    Abstract: SSM6J08FU HN1K06FU
    Text: 5 Small-Signal MOSFETs Toshiba present a range of small-signal MOSFET S-MOS devices developed for various switching and interface applications. The high-current S-MOS Family has been developed principally for high-current switching applications and has been added to


    Original     		PDF SC-59) SCS-70) SSM6J06FU SSM6J08FU SSM6K07FU SSM6J07FU SSM3J13T SSM3K11T SSM3K01T SSM3J01T SCS-70 HN1K06FU

    fet to92

    Abstract: Pch MOS FET SSM3J13T SSM3J16FU ssm3k14t transistor ESM 2SK1830 2SK2035 2SK2825 SSM3J15TE
    Text: Part Number SSM3K03TE SSM3K16TE SSM3K15TE SSM3J16TE SSM3J15TE SSM3K03FE SSM3K04FE 2SK1830 Nch 2SK2825 Nch 2SK2035 Nch SSM3K04FS SSM3K16FS SSM3K15FS 2SJ347 Pch SSM3J16FS SSM3J15FS 2SK1829 Nch 2SK2824 Nch 2SK2034 Nch 2SK2037 Nch SSM3K04FU SSM3K16FU SSM3K05FU


    Original     		PDF SSM3K03TE SSM3K16TE SSM3K15TE SSM3J16TE SSM3J15TE SSM3K03FE SSM3K04FE 2SK1830 2SK2825 2SK2035 fet to92 Pch MOS FET SSM3J13T SSM3J16FU ssm3k14t transistor ESM SSM3J15TE

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA SSM3K02F TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K02F HIGH SPEED SWITCHING APPLICATIONS • Small Package • Low on Resistance Unit in mm Ron = 200 m il Max (V q s = 4 V) Ron = 250 mO (Max) (V q s = 2.5 V) • Low Gate Threshold Voltage


    OCR Scan     		PDF SSM3K02F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA SSM3K02F SSM3K02F TO SHIBA FIELD EFFECT TRANSISTOR DC-DC CONVERTER SILICON N CHANNEL MOS TYPE U n it in mm HIGH SPEED SW ITCHING APPLICATIONS + 0.5 2.5-0.3 • S m a ll Package • Low on Resistance + 0.25 1.5-0.15 Œ : Ron = 200 m H M ax (V g s = 4 V)


    OCR Scan     		PDF SSM3K02F

    SSM3K02F

    Abstract: No abstract text available
    Text: TOSHIBA SSM3K02F TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K02F HIGH SPEED SWITCHING APPLICATIONS Unit in mm + 0.5 2.5-0.3 • Small Package • Low on Resistance Ron = 200 m il Max (Vq S = 4 V) Ron = 250 m il (Max) (Vq S = 2.5 V) •


    OCR Scan     		PDF SSM3K02F SSM3K02F

    LT 0826

    Abstract: No abstract text available
    Text: TOSHIBA SSM3K02F TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K02F HIGH SPEED SW ITCHING APPLICATIONS • S m a ll Package • Low on Resistance U n it in mm R on = 200 m il M ax (V q S = 4 V ) R on = 250 m il (M ax) (V q S = 2.5 V ) •


    OCR Scan     		PDF SSM3K02F LT 0826