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    Toshiba America Electronic Components SSM3K01T(TE85L,F)

    MOSFET N-CH 30V 3.2A TSM
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    SSM3K01 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSM3K01F Toshiba Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; V th (V): (min 0.6) (max 1.1); R DS On 0.085 (max 0.12); Drain-Source Voltage (V): (max 30); Drain Current (mA): (max 1300) Original PDF
    SSM3K01F Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Scan PDF
    SSM3K01F Toshiba Scan PDF
    SSM3K01T Toshiba Original PDF
    SSM3K01T Toshiba Metal oxide N-channel FET, Enhancement Type with diode Original PDF
    SSM3K01TTE85LF Toshiba SSM3K01TTE85LF - Trans MOSFET N-CH 30V 3.2A 3-Pin TSM T/R Original PDF
    SSM3K01T(TE85L,F) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH TSM S-MOS Original PDF

    SSM3K01 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SSM3K01F

    Abstract: No abstract text available
    Text: SSM3K01F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01F High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 120 mΩ max (VGS = 4 V) : Ron = 150 mΩ (max) (VGS = 2.5 V) • Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)


    Original     		SSM3K01F O-236MOD SSM3K01F PDF

    SSM3K01T

    Abstract: No abstract text available
    Text: SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications • · · Unit: mm Small Package Low on Resistance : Ron = 120 mΩ max (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V


    Original     		SSM3K01T SSM3K01T PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications • • • Unit: mm Small Package Low on Resistance : Ron = 120 mΩ max (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6 to 1.1 V


    Original     		SSM3K01T PDF

    SSM3K01T

    Abstract: No abstract text available
    Text: SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications • • • Unit: mm Small Package Low on Resistance : Ron = 120 mΩ max (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V


    Original     		SSM3K01T SSM3K01T PDF

    SSM3K01F

    Abstract: No abstract text available
    Text: SSM3K01F 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K01F ○ 高速スイッチング用 単位: mm • 小型パッケージで高密度実装に最適 • オン抵抗が低い。 : Ron = 120 mΩ max (VGS = 4 V) : Ron = 150 mΩ (max) (VGS = 2.5 V)


    Original     		SSM3K01F O-236MOD SC-59 SSM3K01F PDF

    SSM3K01T

    Abstract: No abstract text available
    Text: SSM3K01T 東芝電界効果トランジスタ シリコンＮチャネルMOS形 SSM3K01T ○ 高速スイッチング用 • • • 単位: mm 小型パッケージで高密度実装に最適 オン抵抗が低い。 : Ron = 120 mΩ 最大 (＠VGS = 4 V)


    Original     		SSM3K01T SSM3K01T PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3K01F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01F High Speed Switching Applications • Small package • Low on resistance : Ron = 120 m : Ron = 150 m • Unit: mm max (VGS = 4 V) (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)


    Original     		SSM3K01F O-236MOD PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications • • • Unit: mm Small Package Low on Resistance : Ron = 120 mΩ max (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V


    Original     		SSM3K01T PDF

    SSM3K01F

    Abstract: No abstract text available
    Text: SSM3K01F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01F High Speed Switching Applications Unit: mm • Small package · Low on resistance : Ron = 120 mΩ max (VGS = 4 V) : Ron = 150 mΩ (max) (VGS = 2.5 V) · Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)


    Original     		SSM3K01F O-236MOD SC-59 SSM3K01F PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications • • • Unit: mm Small Package Low on Resistance : Ron = 120 mΩ max (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V


    Original     		SSM3K01T PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3K01F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01F High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 120 mΩ max (VGS = 4 V) : Ron = 150 mΩ (max) (VGS = 2.5 V) • Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)


    Original     		SSM3K01F O-236MOD SC-59 PDF

    SSM3K01T

    Abstract: No abstract text available
    Text: SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications Unit in mm • • • Small Package Low on Resistance : Ron = 120 mΩ max (＠VGS = 4 V) : Ron = 150 mΩ (max) (＠VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V (＠VDS = 3 V, ID = 0.1 mA)


    Original     		SSM3K01T SSM3K01T PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications • • • Unit: mm Small Package Low on Resistance : Ron = 120 m max (@VGS = 4 V) : Ron = 150 m (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V


    Original     		SSM3K01T PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications Unit in mm • • • Small Package Low on Resistance : Ron = 120 mΩ max (＠VGS = 4 V) : Ron = 150 mΩ (max) (＠VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V (＠VDS = 3 V, ID = 0.1 mA)


    Original     		SSM3K01T PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3K01F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01F High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 120 mΩ max (VGS = 4 V) : Ron = 150 mΩ (max) (VGS = 2.5 V) • Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)


    Original     		SSM3K01F O-236MOD SC-59 PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R PDF

    SSM3K7002

    Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
    Text: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,


    Original     		3402C-0209 SSM3K7002 ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA SSM3K01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K01F HIGH SPEED SWITCHING APPLICATIONS U nit in mm • Sm all Package • Low on Resistance Ron = 120 m il Max (VGS = 4 V) Ron = 150 mO (Max) (VGS = 2.5 V) • Low Gate Threshold Voltage


    OCR Scan     		SSM3K01F 10nISV PDF

    SSM3K01

    Abstract: marking dC
    Text: TOSHIBA SSM3K01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K01 F HIGH SPEED SWITCHING APPLICATIONS Unit in mm • Small Package • Low on Resistance Ron = 120mH Max (VGS = 4V) Ron = 150mH (Max) (VGS = 2.5V) • Low Gate Threshold Voltage


    OCR Scan     		SSM3K01F SSM3K01 120mH 150mH 4mmX25 marking dC PDF

    SSM3K01

    Abstract: SSM3K01F
    Text: TOSHIBA SSM3K01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K01 F HIGH SPEED SWITCHING APPLICATIONS Unit in mm + 0.5 2.5-0.3 • Small Package • Low on Resistance + 0.25 1.5-0.15 Ron = 120 m il Max (VGS = 4 V) Ron = 150 mO (Max) (VGS = 2.5 V)


    OCR Scan     		SSM3K01F SSM3K01 SSM3K01F PDF