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    SRAM TTL 1024K X 8 Search Results

    SRAM TTL 1024K X 8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM27LS07PC Rochester Electronics LLC Standard SRAM, 16X4, 55ns, TTL, PDIP16, PLASTIC, DIP-16 Visit Rochester Electronics LLC Buy
    AM27C010-200DM/B Rochester Electronics LLC 27C010 - 1024K (128K x 8) CMOS EPROM Visit Rochester Electronics LLC Buy
    AM27C010-55DI Rochester Electronics LLC 27C010 - 1024K (128K x 8) CMOS EPROM Visit Rochester Electronics LLC Buy
    27C010-120DI Rochester Electronics LLC 27C010 - 1024K (128K x 8) CMOS EPROM Visit Rochester Electronics LLC Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy

    SRAM TTL 1024K X 8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AS6C8008A

    Abstract: No abstract text available
    Text: JANUARY 2008 AS6C8008A 1024K X 8 BIT SUPER LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Revised ORDERING INFORMATION in page 12 Deleted E grade 1 Issue Date Dec.18.2009 Aug.30.2010 Apr. 12.2011 JANUARY 2008


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    PDF AS6C8008A 1024K 44-pin 48-ball AS6C8008A

    AS7C38096B

    Abstract: 1024K
    Text: AS7C38096B 1024K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Confidential Description Initial Issue Issue Date June.2014 Rev 1.0 – June 2014 AS7C38096B 1024K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 FEATURES GENERAL DESCRIPTION


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    PDF AS7C38096B 1024K 90/80mA 48-ball AS7C38096B 16M-bit

    Untitled

    Abstract: No abstract text available
    Text: ALLIANCE MEMORY, INC AS6C8008A Rev. 1.2 1024K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Revised ORDERING INFORMATION in page 12 Deleted E grade 1 Issue Date Dec.18.2009 Aug.30.2010 Apr. 12.2011


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    PDF AS6C8008A 1024K 48-ball

    AS6C8008

    Abstract: SRAM TTL 1024K x 8 AS6C8008-55ZIN LOW512K sram battery
    Text: JANUARY 2008 January 2007 AS6C8008 X 8 BITCMOS LOW SRAM POWER CMOS SRAM 1024K X 8 BIT SUPER 512K LOW POWER FEATURES GENERAL DESCRIPTION Fast access time : 55ns Low power consumption: Operating current : 30mA TYP. Standby current : 6µA (TYP.) LL-version


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    PDF AS6C8008 1024K 44-pin 48-ball AS6C8008 608-bit JANUARY/2008, SRAM TTL 1024K x 8 AS6C8008-55ZIN LOW512K sram battery

    Untitled

    Abstract: No abstract text available
    Text:  LY61L102516A 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.2 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issued Added LY61L102516AGL Revised IOH/IOL = -8mA/4mA to IOH/IOL = -4mA/8mA in AC TEST CONDITIONS Lyontek Inc. reserves the rights to change the specifications and products without notice.


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    PDF LY61L102516A 1024K LY61L102516AGL LY61L102516AML-10 LY61L102516AML-10T LY61L102516AML-10I LY61L102516AML-10IT LY61L102516AGL-10

    Untitled

    Abstract: No abstract text available
    Text:  LY62L10248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 1.2 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Revised ORDERING Deleted E grade INFORMATION in page 11 Lyontek Inc. reserves the rights to change the specifications and products without notice.


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    PDF LY62L10248 1024K 55/70ns 30/20mA 44-pin 48-ball

    AS6C8008

    Abstract: sram 8008 SRAM TTL 1024K x 8 LOW512K 512K x 8 bit sram 32 pin
    Text: JANUARY 2008 January 2007 AS6C8008 X 8 BIT LOW POWER CMOS SRAM 1024K X 8 BIT SUPER 512K LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Fast access time : 55ns Low power consumption: Operating current : 30/20mA TYP. Standby current : 6µA (TYP.) LL-version


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    PDF AS6C8008 1024K 30/20mA 44-pin 48-ball AS6C8008 608-bit JANUARY/2008, sram 8008 SRAM TTL 1024K x 8 LOW512K 512K x 8 bit sram 32 pin

    LY6210248

    Abstract: SRAM TTL 1024K x 8
    Text: LY6210248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 0.4 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 0.4 Description Initial Issue Added ISB Spec. Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available


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    PDF LY6210248 1024K 44-pin 48-ball LY6210248 SRAM TTL 1024K x 8

    Untitled

    Abstract: No abstract text available
    Text: LY6210248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 0.2 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Description Initial Issue Added ISB Spec. Issue Date Oct.14.2007 Fab.1.2008 Lyontek Inc. reserves the rights to change the specifications and products without notice.


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    PDF LY6210248 1024K LY6210248 608-bit 44-pin 48-ball

    LY62W10248

    Abstract: No abstract text available
    Text:  LY62W10248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 1.3 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Description Initial Issue Added ISB Spec. Revised ICC1/ISB1/VDR/IDR Spec. Revised VTERM to VT1 and VT2 Revised Test Condition of ISB1/IDR


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    PDF LY62W10248 1024K 44-pin 48-ball LY62W10248

    Untitled

    Abstract: No abstract text available
    Text: LY61L10268A 1024K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Description Initial Issue Issue Date Jan.21.2014 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, lndustry E . Rd. 9, Science-Based Industrial Park, Hsinchu 300, Taiwan


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    PDF LY61L10268A 1024K LY61L10268A 16M-bit LY61L10268AGL-8IT LY61L10268AGL-8I LY61L10268AGL-8T LY61L10268AGL-8

    ly62l1024

    Abstract: LY62L10248
    Text:  LY62L10248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Description Initial Issue Issue Date Dec.18.2009 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.


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    PDF LY62L10248 1024K 55/70ns 30/20mA 44-pin 48-ball ly62l1024 LY62L10248

    Untitled

    Abstract: No abstract text available
    Text: LY6210248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 0.4 Rev. 0.5 Rev. 0.6 Rev. 1.0 Description Initial Issue Added ISB Spec. Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package


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    PDF LY6210248 1024K LY6210248ML-55LL LY6210248GL-70LLT LY6210248GL-70LLI LY6210248GL-70LLIT

    AS6C1616

    Abstract: cmos sram AS6C1616-55BIN 1024K SRAM TTL 1024K x 8
    Text: AS6C1616 FEBRUARY 2009 January 2007 512K X 8 BI T LOW 1024K X 16 BIT LOW POWER CMOS SRAMPOWER FEATURES CMOS SRAM GENERAL DESCRIPTION The AS6C1616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using


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    PDF AS6C1616 1024K 55/70ns 45/30mA 48-ball AS6C1616 216-bit FEBRUARY/2009, cmos sram AS6C1616-55BIN SRAM TTL 1024K x 8

    SRAM TTL 1024K x 8

    Abstract: AS6C1616 cmos sram AS6C1616-70 DR 12V
    Text: AS6C1616 FEBRUARY 2009 January 2007 512K X 8 BI T LOW 1024K X 16 BIT LOW POWER CMOS SRAMPOWER FEATURES CMOS SRAM GENERAL DESCRIPTION The AS6C1616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using


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    PDF AS6C1616 1024K AS6C1616 216-bit FEBRUARY/2009, SRAM TTL 1024K x 8 cmos sram AS6C1616-70 DR 12V

    Untitled

    Abstract: No abstract text available
    Text: LY62L10248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 0.4 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 0.4 Description Initial Issue Revised ISB1, ICC1, IDR, VDR Delete -45ns Spec. Added ISB Spec. Added SL Spec. Issue Date Jan.8.2007 Nov.1.2007


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    PDF LY62L10248 1024K -45ns LY62L10248 608-bit 44-pin 48-ball

    Untitled

    Abstract: No abstract text available
    Text:  LY62W10248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 1.7 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Rev. 1.6 Rev. 1.7 Description Initial Issue Added ISB Spec. Revised ICC1/ISB1/VDR/IDR Spec. Revised VTERM to VT1 and VT2


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    PDF LY62W10248 1024K 44-pin 48-ball

    AS6C1616A

    Abstract: AS6C8016
    Text: AUGUST 2010 AS6C1616A 1024K X 16 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION • • • • • • TheAS6C1616A - 55%,1 is fabricated by Alliance's advanced full CMOS process technology. The device supports industrial temperature range and Chip Scale


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    PDF 1024K 48-FPBGA AS6C1616A TheAS6C1616A AS6C1616A AS6C8016

    as7c316098a

    Abstract: No abstract text available
    Text: AS7C316098A 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.2 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issued Add 48 pin BGA package type. 1.“CE# ≧VCC - 0.2V” revised as ”CE# ≦0.2” for TEST CONDITION of Average Operating Power supply Current


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    PDF AS7C316098A 1024K Page11 AS7C316098A 16M-bit

    Untitled

    Abstract: No abstract text available
    Text: AS7C316098A 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.2 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issued Add 48 pin BGA package type. 1.“CE# VCC - 0.2V” revised as ”CE# Ψ0.2” for TEST CONDITION of Average Operating Power supply Current


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    PDF AS7C316098A 1024K Page11 48-ball

    AS7C316098B

    Abstract: No abstract text available
    Text: AS7C316098B 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Confidential Description Initial Issued Issue Date June 2014 Rev1.0 – June 2014 AS7C316098B 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.0 FEATURES GENERAL DESCRIPTION


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    PDF AS7C316098B 1024K 54-pin AS7C316098B 16M-R

    Untitled

    Abstract: No abstract text available
    Text: LY62L102516 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 0.1 REVISION HISTORY Revision Rev. 0.1 Description Initial Issue Issue Date Feb.20.2008 Lyontek Inc. reserves the rights to change the specifications and products without notice. 40 Hsuch-Fu Rd., Hsinchu, Taiwan.


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    PDF LY62L102516 1024K LY62L102516 216-bit 55/70ns 48-pin 48-ball

    Untitled

    Abstract: No abstract text available
    Text: LY62L102516A 1024K x 16 BIT LOW POWER CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Description Initial Issue Issue Date Jan. 09. 2012 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.


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    PDF LY62L102516A 1024K LY62L102516A 216-bit 48-pin

    Untitled

    Abstract: No abstract text available
    Text: LY62102516 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 0.3 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Description Initial Issue Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION


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    PDF LY62102516 1024K 48-pin 48-ball