AS6C8008A
Abstract: No abstract text available
Text: JANUARY 2008 AS6C8008A 1024K X 8 BIT SUPER LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Revised ORDERING INFORMATION in page 12 Deleted E grade 1 Issue Date Dec.18.2009 Aug.30.2010 Apr. 12.2011 JANUARY 2008
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AS6C8008A
1024K
44-pin
48-ball
AS6C8008A
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AS7C38096B
Abstract: 1024K
Text: AS7C38096B 1024K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Confidential Description Initial Issue Issue Date June.2014 Rev 1.0 – June 2014 AS7C38096B 1024K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 FEATURES GENERAL DESCRIPTION
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AS7C38096B
1024K
90/80mA
48-ball
AS7C38096B
16M-bit
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Untitled
Abstract: No abstract text available
Text: ALLIANCE MEMORY, INC AS6C8008A Rev. 1.2 1024K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Revised ORDERING INFORMATION in page 12 Deleted E grade 1 Issue Date Dec.18.2009 Aug.30.2010 Apr. 12.2011
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AS6C8008A
1024K
48-ball
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AS6C8008
Abstract: SRAM TTL 1024K x 8 AS6C8008-55ZIN LOW512K sram battery
Text: JANUARY 2008 January 2007 AS6C8008 X 8 BITCMOS LOW SRAM POWER CMOS SRAM 1024K X 8 BIT SUPER 512K LOW POWER FEATURES GENERAL DESCRIPTION Fast access time : 55ns Low power consumption: Operating current : 30mA TYP. Standby current : 6µA (TYP.) LL-version
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AS6C8008
1024K
44-pin
48-ball
AS6C8008
608-bit
JANUARY/2008,
SRAM TTL 1024K x 8
AS6C8008-55ZIN
LOW512K
sram battery
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Untitled
Abstract: No abstract text available
Text: LY61L102516A 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.2 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issued Added LY61L102516AGL Revised IOH/IOL = -8mA/4mA to IOH/IOL = -4mA/8mA in AC TEST CONDITIONS Lyontek Inc. reserves the rights to change the specifications and products without notice.
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LY61L102516A
1024K
LY61L102516AGL
LY61L102516AML-10
LY61L102516AML-10T
LY61L102516AML-10I
LY61L102516AML-10IT
LY61L102516AGL-10
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Untitled
Abstract: No abstract text available
Text: LY62L10248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 1.2 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Revised ORDERING Deleted E grade INFORMATION in page 11 Lyontek Inc. reserves the rights to change the specifications and products without notice.
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LY62L10248
1024K
55/70ns
30/20mA
44-pin
48-ball
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AS6C8008
Abstract: sram 8008 SRAM TTL 1024K x 8 LOW512K 512K x 8 bit sram 32 pin
Text: JANUARY 2008 January 2007 AS6C8008 X 8 BIT LOW POWER CMOS SRAM 1024K X 8 BIT SUPER 512K LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Fast access time : 55ns Low power consumption: Operating current : 30/20mA TYP. Standby current : 6µA (TYP.) LL-version
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AS6C8008
1024K
30/20mA
44-pin
48-ball
AS6C8008
608-bit
JANUARY/2008,
sram 8008
SRAM TTL 1024K x 8
LOW512K
512K x 8 bit sram 32 pin
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LY6210248
Abstract: SRAM TTL 1024K x 8
Text: LY6210248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 0.4 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 0.4 Description Initial Issue Added ISB Spec. Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available
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LY6210248
1024K
44-pin
48-ball
LY6210248
SRAM TTL 1024K x 8
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Untitled
Abstract: No abstract text available
Text: LY6210248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 0.2 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Description Initial Issue Added ISB Spec. Issue Date Oct.14.2007 Fab.1.2008 Lyontek Inc. reserves the rights to change the specifications and products without notice.
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LY6210248
1024K
LY6210248
608-bit
44-pin
48-ball
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LY62W10248
Abstract: No abstract text available
Text: LY62W10248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 1.3 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Description Initial Issue Added ISB Spec. Revised ICC1/ISB1/VDR/IDR Spec. Revised VTERM to VT1 and VT2 Revised Test Condition of ISB1/IDR
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LY62W10248
1024K
44-pin
48-ball
LY62W10248
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Untitled
Abstract: No abstract text available
Text: LY61L10268A 1024K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Description Initial Issue Issue Date Jan.21.2014 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, lndustry E . Rd. 9, Science-Based Industrial Park, Hsinchu 300, Taiwan
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LY61L10268A
1024K
LY61L10268A
16M-bit
LY61L10268AGL-8IT
LY61L10268AGL-8I
LY61L10268AGL-8T
LY61L10268AGL-8
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ly62l1024
Abstract: LY62L10248
Text: LY62L10248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Description Initial Issue Issue Date Dec.18.2009 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
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LY62L10248
1024K
55/70ns
30/20mA
44-pin
48-ball
ly62l1024
LY62L10248
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Untitled
Abstract: No abstract text available
Text: LY6210248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 0.4 Rev. 0.5 Rev. 0.6 Rev. 1.0 Description Initial Issue Added ISB Spec. Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package
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LY6210248
1024K
LY6210248ML-55LL
LY6210248GL-70LLT
LY6210248GL-70LLI
LY6210248GL-70LLIT
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AS6C1616
Abstract: cmos sram AS6C1616-55BIN 1024K SRAM TTL 1024K x 8
Text: AS6C1616 FEBRUARY 2009 January 2007 512K X 8 BI T LOW 1024K X 16 BIT LOW POWER CMOS SRAMPOWER FEATURES CMOS SRAM GENERAL DESCRIPTION The AS6C1616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using
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AS6C1616
1024K
55/70ns
45/30mA
48-ball
AS6C1616
216-bit
FEBRUARY/2009,
cmos sram
AS6C1616-55BIN
SRAM TTL 1024K x 8
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SRAM TTL 1024K x 8
Abstract: AS6C1616 cmos sram AS6C1616-70 DR 12V
Text: AS6C1616 FEBRUARY 2009 January 2007 512K X 8 BI T LOW 1024K X 16 BIT LOW POWER CMOS SRAMPOWER FEATURES CMOS SRAM GENERAL DESCRIPTION The AS6C1616 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using
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AS6C1616
1024K
AS6C1616
216-bit
FEBRUARY/2009,
SRAM TTL 1024K x 8
cmos sram
AS6C1616-70
DR 12V
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Untitled
Abstract: No abstract text available
Text: LY62L10248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 0.4 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 0.4 Description Initial Issue Revised ISB1, ICC1, IDR, VDR Delete -45ns Spec. Added ISB Spec. Added SL Spec. Issue Date Jan.8.2007 Nov.1.2007
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LY62L10248
1024K
-45ns
LY62L10248
608-bit
44-pin
48-ball
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Untitled
Abstract: No abstract text available
Text: LY62W10248 1024K X 8 BIT LOW POWER CMOS SRAM Rev. 1.7 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Rev. 1.6 Rev. 1.7 Description Initial Issue Added ISB Spec. Revised ICC1/ISB1/VDR/IDR Spec. Revised VTERM to VT1 and VT2
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LY62W10248
1024K
44-pin
48-ball
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AS6C1616A
Abstract: AS6C8016
Text: AUGUST 2010 AS6C1616A 1024K X 16 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION • • • • • • TheAS6C1616A - 55%,1 is fabricated by Alliance's advanced full CMOS process technology. The device supports industrial temperature range and Chip Scale
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1024K
48-FPBGA
AS6C1616A
TheAS6C1616A
AS6C1616A
AS6C8016
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as7c316098a
Abstract: No abstract text available
Text: AS7C316098A 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.2 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issued Add 48 pin BGA package type. 1.“CE# ≧VCC - 0.2V” revised as ”CE# ≦0.2” for TEST CONDITION of Average Operating Power supply Current
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AS7C316098A
1024K
Page11
AS7C316098A
16M-bit
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Untitled
Abstract: No abstract text available
Text: AS7C316098A 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.2 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issued Add 48 pin BGA package type. 1.“CE# VCC - 0.2V” revised as ”CE# Ψ0.2” for TEST CONDITION of Average Operating Power supply Current
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AS7C316098A
1024K
Page11
48-ball
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AS7C316098B
Abstract: No abstract text available
Text: AS7C316098B 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Confidential Description Initial Issued Issue Date June 2014 Rev1.0 – June 2014 AS7C316098B 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.0 FEATURES GENERAL DESCRIPTION
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AS7C316098B
1024K
54-pin
AS7C316098B
16M-R
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Untitled
Abstract: No abstract text available
Text: LY62L102516 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 0.1 REVISION HISTORY Revision Rev. 0.1 Description Initial Issue Issue Date Feb.20.2008 Lyontek Inc. reserves the rights to change the specifications and products without notice. 40 Hsuch-Fu Rd., Hsinchu, Taiwan.
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LY62L102516
1024K
LY62L102516
216-bit
55/70ns
48-pin
48-ball
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Untitled
Abstract: No abstract text available
Text: LY62L102516A 1024K x 16 BIT LOW POWER CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Description Initial Issue Issue Date Jan. 09. 2012 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
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LY62L102516A
1024K
LY62L102516A
216-bit
48-pin
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Untitled
Abstract: No abstract text available
Text: LY62102516 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 0.3 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Description Initial Issue Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION
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LY62102516
1024K
48-pin
48-ball
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