A15A
Abstract: A15B EDI8L21664V MO-151 9704 64k x 16 SRAM
Text: EDI8L21664V 2x64Kx16 SRAM TMS320C54x External SRAM Memory Solution Features The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multilayer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA. Operating with a 3.3V power supply and with access
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EDI8L21664V
2x64Kx16
TMS320C54x
EDI8L21664VxxBC
64Kx16
DQ0-15)
EDI8L21664V10BC
A15A
A15B
EDI8L21664V
MO-151
9704
64k x 16 SRAM
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MR0A16A
Abstract: 64Kx16 SRAM 64Kx16 MR0A16ACYS35 MR0A16AVYS35 MR0A16AYS35
Text: MR0A16A 64Kx16 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System
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MR0A16A
64Kx16
20-years
44-TSOP
48-BGA
MR0A16A
SRAM 64Kx16
MR0A16ACYS35
MR0A16AVYS35
MR0A16AYS35
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9261A
Abstract: 64K X 4 CACHE SRAM D2111 CYM9260 CYM9263 256k x 18
Text: fax id: 2042 1CY M92 62A /B PRELIMINARY CYM9260 CYM9261A/B CYM9262A/B CYM9263 64K x 72 SRAM Module 128K x 72 SRAM Module 256K x 72 SRAM Module 512K x 72 SRAM Module Features • Operates at 50 MHz. • Uses 64K x 18/ 128K x 18 or 256K x 18 high performance
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CYM9260
CYM9261A/B
CYM9262A/B
CYM9263
168-position
CYM9260,
CYM9261,
CYM9262
CYM9263
9261B,
9261A
64K X 4 CACHE SRAM
D2111
CYM9260
256k x 18
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3524CP
Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS
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HB56U132
HB56H132
HB56U232
HB56H232
HN62W454B
512kx8
256kx16
HN62W4416N
16Mbit
1Mx16
3524CP
2MX40
RAM128KX8 DIP
HM624256
HM62832
16Mbit FRAM
Dram 168 pin EDO 8Mx8
hm62256
flash 32 Pin PLCC 16mbit
HN27C1024
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SM-1994
Abstract: A2000V
Text: HY62UF16100/ HY62QF16100/ HY62EF16100/ HY62SF16100 Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16100 / HY62QF16100 / HY62EF16100 / HY62SF16100 is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The
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HY62UF16100/
HY62QF16100/
HY62EF16100/
HY62SF16100
64Kx16bit
HY62UF16100
HY62QF16100
HY62EF16100
16bit.
SM-1994
A2000V
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KM718B90
Abstract: No abstract text available
Text: PRELIMINARY 64Kx18 Synchronous SRAM KM718B90 Document Title 64Kx18-Bit Synchronous Burst SRAM, 5V Power Datasheets for 52PLCC Revision History Rev. No. History Rev. 1.0 - Final specification release Rev. 1.1 - Change specification format. No change was made in parameters.
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64Kx18
KM718B90
64Kx18-Bit
52PLCC
KM718B90
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SM-1994
Abstract: No abstract text available
Text: HY62UF16101C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16101C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16101C uses high performance full CMOS process technology
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HY62UF16101C
64Kx16bit
16bit.
400mil
Voltage2UF16101C
48ball
SM-1994.
SM-1994
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM616FS1000Z, KM616FR1000Z Family Document Title 64Kx16 SUper Low Power and Low Voltage Full CMOS SRAM Data Sheets for 48-CSP Revision History Rev. No. History Draft Data Remark Rev. 0.0 - 1′st edition - Package Dimension Finalized
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KM616FS1000Z,
KM616FR1000Z
64Kx16
48-CSP
25/Typ.
32/Typ.
55/Typ.
42/Typ.
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KM718V687-10
Abstract: KM718V687-8 KM718V687-9
Text: PRELIMINARY 64Kx18 Synchronous SRAM KM718V687 Document Title 64Kx18-Bit Synchronous Burst SRAM, 3.3V Power Data Sheets for 100TQFP Revision History Rev. No. History Draft Date Remark Rev. 0.0 Initial draft Nov. 02. 1996 Preliminary Rev. 1.0 Final spec release
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64Kx18
KM718V687
64Kx18-Bit
100TQFP
100-TQFP-1420A
KM718V687-10
KM718V687-8
KM718V687-9
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KM718BV87-12
Abstract: o17k
Text: PRELIMINARY 64Kx18 Synchronous SRAM KM718BV87 Document Title 64Kx18 Synchronous Static SRAM, 3.3V Power Data Sheets for 52 PLCC Revision History Rev. No. History Rev. 1.0 - Final specification release Rev. 1.1 - Change specification format. No change was made in parameters.
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64Kx18
KM718BV87
KM718BV87-12
o17k
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Untitled
Abstract: No abstract text available
Text: HY62QF16100C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62QF16100C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62QF16100C uses high performance full CMOS process technology
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HY62QF16100C
64Kx16bit
16bit.
HY62QCKAGE
48ball
SM-1994.
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9261A
Abstract: CYM9260 CYM9263 PM44 9261
Text: fax id: 2042 3g~ yr pyprfs^ PRELIMINARY CYM9260 CYM9261A/B CYM9262A/B CYM9263 64K x 72 SRAM 128K x 72 SRAM 256K x 72 SRAM 512K x 72 SRAM Features Module Module Module Module 9262B, 9263 SRAM’s in plastic surface mount packages on an epoxy laminate board with pins. The modules are designed
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CYM9260
CYM9261A/B
CYM9262A/B
CYM9263
18/128K
168-position
CYM9260,
CYM9261,
CYM9262
CYM9263
9261A
PM44
9261
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synchronous sram
Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
Text: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK
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EDH816H64C
EDI2018QC
EDI20181C
EDI20182C
EDI20183C
EDI20184C
EDI20185C
EDI2040C
EDI2041C
EDI2042C
synchronous sram
4Kx1 DRAM
SRAM 6T
SRAM
DRAM 64kx16
edi8832
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9261A
Abstract: No abstract text available
Text: fax id: 2042 3g~ yr pyprfs^ PRELIMINARY CYM9260 CYM9261A/B CYM9262A/B CYM9263 64K x 72 SRAM 128K x 72 SRAM 256K x 72 SRAM 512K x 72 SRAM Features • Operates at 50 MHz. • Uses 64K x 1 8 /1 28K x 18 or 256K x 18 high perform ance synchronous SRAMs. • 168-position Angled DIMM from Amp p/n 179508-2
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CYM9260
CYM9261A/B
CYM9262A/B
CYM9263
168-position
CYM9260,
CYM9262
CYM9263
9262B,
9261A
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Untitled
Abstract: No abstract text available
Text: KM718BV87 64Kx18 Synchronous SRAM 64K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. The KM718BV87 is a 1,179,648 bit Synchronous Static • On-Chip Address Counter. Random Access Memory designed to support zero wait
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KM718BV87
64Kx18
18-Bit
52-Pin
KM718BV87
486/Pentium
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KM718B90
Abstract: No abstract text available
Text: PRELIMINARY KM718B90 64Kx18 Synchronous SRAM 64K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. The KM718B90 is a 1,179,648 bit Synchronous Static • On-Chip Address Counter. Random Access Memory designed to support 66MHz of
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KM718B90
64Kx18
18-Bit
52-Pin
KM718B90
66MHz
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 64Kx18 Synchronous SRAM KM718BV87 64K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. The KM718BV87 is a 1,179,648 bit Synchronous Static • On-Chip Address Counter. Random Access Memory designed to support zero wait
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KM718BV87
64Kx18
18-Bit
52-Pin
KM718BV87
i486/Pentium
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY K M 718V687 64Kx18 Synchronous SRAM 64Kx18 Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION. • Synchronous Operation. • On-Chip Address Counter. The KM 718V687 is 1,179,648 bits Synchronous Static Random Access Memory designed to support zero wait
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718V687
64Kx18
718V687
KM718V687
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KM718BV87-12
Abstract: No abstract text available
Text: PRELIMINARY 64Kx18 Synchronous SRAM KM718BV87 64K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • On-Chip Address Counter. The KM718BV87 is a 1,179,648 bit Synchronous Static Random Access Memory designed to support zero wait
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KM718BV87
64Kx18
18-Bit
52-Pin
KM718BV87
KM718BV87-12
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 64Kx18 Synchronous SRAM KM718BV87 64K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. The KM718BV87 is a 1,179,648 bit Synchronous Static • On-Chip Address Counter. Random Access Memory designed to support zero wait
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64Kx18
KM718BV87
18-Bit
KM718BV87
486/Pentium
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM718B90 64Kx18 Synchronous SRAM 64K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. The KM718B90 is a 1,179,648 bit Synchronous Static • On-Chip Address Counter. Random Access Memory designed to support 66MHz of
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KM718B90
64Kx18
18-Bit
KM718B90
66MHz
7Rb4142
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KM718B90-12
Abstract: S334
Text: PRELIMINARY 64Kx18 Synchronous SRAM KM718B90 64K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. The KM718B90 is a 1,179,648 bit Synchronous Static • On-Chip Address Counter. Random Access Memory designed to support 66MHz of
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KM718B90
64Kx18
18-Bit
52-Pin
KM718B90
66MHz
KM718B90-12
S334
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM718B86 64Kx18 Synchronous SRAM 64K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. The KM718B86 is a 1,179,648 bit Synchronous Static • On-Chip Address Counter. Random Access Memory designed to support 66MHz of
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KM718B86
64Kx18
18-Bit
KM718B86
66MHz
ofKM718B86
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A15A
Abstract: A15B EDI8L21664V MO-151 TMS320C54X 9704
Text: ^EDI EDI8L21664V M ELECTRONIC DESIGNS. INC 2x64Kx16SRAM TMS320C54X External SRAM Memory Solution Features The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM DSP Memory Solution constructed w ith two 64Kx16 die mounted on a m ulti • Texas Instruments TMS320C54x
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EDI8L21664V
2x64Kx16SRAM
TMS320C54x
MO-151
EDI8L21664VxxBC
2x64Kx16
64Kx16
EDI8L21664V10BC
EDI8L21664V12BC
A15A
A15B
EDI8L21664V
MO-151
9704
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