PESDXL5UV
Abstract: SOT666 package philips diode arrays
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PESD3V3L5UV; PESD5V0L5UV Low capacitance 5-fold ESD protection diode arrays in SOT666 package Product specification 2004 Mar 23 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package
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M3D744
OT666
OT666
SCA76
R76/01/pp11
PESDXL5UV
SOT666 package
philips diode arrays
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PBLS4003V
Abstract: transistor PDTC PBLS1501V PBLS1503V transistor sc 308 PBLS4001V PBLS4001Y PBLS1501Y PBLS1503Y Philips pmeg
Text: AN10361 Philips BISS loadswitch solutions and the SOT666 BISS loadswitch demo board Rev. 01.00 — 20 June 2005 Application note Document information Info Content Keywords BISS, loadswitch, high side switch, supply line switch, SOT666, low VCEsat, RET Abstract
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AN10361
OT666
OT666,
PBLS4003V
transistor PDTC
PBLS1501V
PBLS1503V
transistor sc 308
PBLS4001V
PBLS4001Y
PBLS1501Y
PBLS1503Y
Philips pmeg
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BAT54CV
Abstract: SOT-666
Text: BAT54CV Two Schottky barrier double diodes in ultra small SOT666 package Rev. 01 — 22 September 2004 Objective data sheet 1. Product profile 1.1 General description Two planar Schottky barrier double diodes with common cathodes and an integrated guard ring for stress protection encapsulated in a SOT666 ultra small SMD plastic
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BAT54CV
OT666
OT666
BAT54CV
SOT-666
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BAT54VV
Abstract: No abstract text available
Text: BAT54VV Schottky barrier triple diode in ultra small SOT666 package Rev. 01 — 14 September 2004 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small
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BAT54VV
OT666
BAT54VV
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Untitled
Abstract: No abstract text available
Text: BAT54VV Schottky barrier triple diode in ultra small SOT666 package Rev. 02 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small
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BAT54VV
OT666
BAT54VV
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SOT666
Abstract: BAT54CV
Text: BAT54CV Two Schottky barrier double diodes in ultra small SOT666 package Rev. 02 — 15 January 2010 Objective data sheet 1. Product profile 1.1 General description Two planar Schottky barrier double diodes with common cathodes and an integrated guard ring for stress protection encapsulated in a SOT666 ultra small SMD plastic
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BAT54CV
OT666
OT666
BAT54CV
SOT666
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BAT54VV
Abstract: diode marking 14
Text: BAT54VV Schottky barrier triple diode in ultra small SOT666 package Rev. 02 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small
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BAT54VV
OT666
BAT54VV
diode marking 14
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BAS70VV
Abstract: No abstract text available
Text: BAS70VV 70 V, 70 mA Schottky barrier triple isolated diode in SOT666 Rev. 01 — 10 September 2004 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small
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BAS70VV
OT666
OT666
BAS70VV
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SMD MARKING CODE 2M
Abstract: PMEG3002TV
Text: PMEG3002TV 0.2 A very low VF MEGA Schottky barrier dual rectifier in SOT666 package Rev. 02 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier dual rectifier
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PMEG3002TV
OT666
OT666
PMEG3002TV
SMD MARKING CODE 2M
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PMEG3002TV
Abstract: No abstract text available
Text: PMEG3002TV 0.2 A very low VF MEGA Schottky barrier dual rectifier in SOT666 package Rev. 01 — 21 October 2005 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier dual rectifier
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PMEG3002TV
OT666
OT666
PMEG3002TV
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Untitled
Abstract: No abstract text available
Text: PMEG3002TV 0.2 A very low VF MEGA Schottky barrier dual rectifier in SOT666 package Rev. 02 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier dual rectifier
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PMEG3002TV
OT666
OT666
PMEG3002TV
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NXP SMD TRANSISTOR MARKING CODE
Abstract: PMBT3906VS smd "code rc" transistor transistor smd code marking 102 ZI Marking Code transistor
Text: PMBT3906VS 40 V, 200 mA PNP/PNP switching transistor Rev. 01 — 20 August 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device SMD plastic package.
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PMBT3906VS
OT666
PMBT3906VS
PMBT3904VS
PMBT3946VPN
AEC-Q101
771-PMBT3906VS115
NXP SMD TRANSISTOR MARKING CODE
smd "code rc" transistor
transistor smd code marking 102
ZI Marking Code transistor
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BCP55
Abstract: BCX55 PBSS4160V PBSS5160V
Text: PBSS4160V 60 V, 1 A NPN low VCEsat BISS transistor Rev. 01 — 23 April 2004 Objective data sheet 1. Product profile 1.1 General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. 1.2 Features • ■ ■
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PBSS4160V
OT666
PBSS5160V.
BCP55
BCX55.
BCX55
PBSS4160V
PBSS5160V
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transistor smd zc ce
Abstract: marking code my SMD Transistor npn transistor smd zc TRANSISTOR SMD MARKING CODES transistor smd code marking 102 TRANSISTOR SMD MARKING CODE K TRANSISTOR SMD MARKING CODE NXP SMD TRANSISTOR MARKING CODE smd transistor zc marking code BV SMD Transistor
Text: PMBT3904VS 40 V, 200 mA NPN/NPN switching transistor Rev. 01 — 8 July 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device SMD plastic package.
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PMBT3904VS
OT666
OT666
PMBT3906VS
PMBT3946VPN
PMBT3904VS
transistor smd zc ce
marking code my SMD Transistor npn
transistor smd zc
TRANSISTOR SMD MARKING CODES
transistor smd code marking 102
TRANSISTOR SMD MARKING CODE
K TRANSISTOR SMD MARKING CODE
NXP SMD TRANSISTOR MARKING CODE
smd transistor zc
marking code BV SMD Transistor
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LD39015M25R
Abstract: No abstract text available
Text: LD39015 150 mA low quiescent current and low noise voltage regulator Datasheet - production data • Logic-controlled electronic shutdown • Compatible with ceramic capacitors CO = 1 µF • Internal current and thermal limit • Available in SOT666 and SOT23-5L packages
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LD39015
OT666
OT23-5L
OT666
OT23-5L
LD39n
DocID14003
LD39015M25R
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st marking flash
Abstract: JESD97
Text: ESDALC6V1-5P6 ESD protection for high speed interface Features • Diode array topology ■ Low capacitance 12 pF typical ■ Lead-free package SOT666 Benefits ■ Low capacitance uni-directional ESD protection. ■ Low PCB space consuming, 2.5 mm2 max.
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OT666
883G-Method
st marking flash
JESD97
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marking code LA SMD
Abstract: MSD779 PMEG3015EV
Text: PMEG3015EV 30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier in SOT666 package Rev. 01 — 4 April 2005 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an
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PMEG3015EV
OT666
OT666
marking code LA SMD
MSD779
PMEG3015EV
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MSD779
Abstract: PMEG3015EV SYM038
Text: PMEG3015EV 30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier in SOT666 package Rev. 02 — 4 February 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an
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PMEG3015EV
OT666
OT666
PMEG3015EV
MSD779
SYM038
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Untitled
Abstract: No abstract text available
Text: PBSS5220V 20 V, 2 A PNP low VCEsat BISS transistor Rev. 03 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.
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PBSS5220V
OT666
PBSS4220V.
PBSS5220V
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Untitled
Abstract: No abstract text available
Text: STLQ015 150 mA, ultra low quiescent current linear voltage regulator Datasheet - production data • Compatible with ceramic capacitor COUT = 1 µF • Internal current and thermal limit • Package: SOT666-6L • Temperature range: from -40 °C to 125 °C
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STLQ015
OT666-6L
OT666
STLQ015
DocID17285
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MARKING CODE SMD IC
Abstract: PBSS4220V PBSS5220V NV SMD TRANSISTOR TRANSISTOR SMD MARKING CODE N7
Text: PBSS5220V 20 V, 2 A PNP low VCEsat BISS transistor Rev. 02 — 8 February 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.
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PBSS5220V
OT666
PBSS4220V.
PBSS5220V
MARKING CODE SMD IC
PBSS4220V
NV SMD TRANSISTOR
TRANSISTOR SMD MARKING CODE N7
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transistor smd marking CODE n6
Abstract: PBSS4220V PBSS5220V MARKING CODE SMD IC
Text: PBSS4220V 20 V, 2 A NPN low VCEsat BISS transistor Rev. 01 — 6 February 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.
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PBSS4220V
OT666
PBSS5220V.
PBSS4220V
transistor smd marking CODE n6
PBSS5220V
MARKING CODE SMD IC
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BCP52
Abstract: BCX52 PBSS4160V PBSS5160V
Text: PBSS5160V 60 V, 1 A PNP low VCEsat BISS transistor Rev. 01 — 20 April 2004 Objective data sheet 1. Product profile 1.1 General description PNP low VCEsat (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V. 1.2 Features • ■ ■
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PBSS5160V
OT666
PBSS4160V.
BCP52
BCX52.
BCX52
PBSS4160V
PBSS5160V
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Untitled
Abstract: No abstract text available
Text: PBSS5160V 60 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V.
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PBSS5160V
OT666
PBSS4160V.
BCP52
BCX52
PBSS5160V
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