Untitled
Abstract: No abstract text available
Text: 1SS400 Taiwan Semiconductor Small Signal Product 200mW, SMD High Speed Switching Diode FEATURES - Fast switching device trr < 4.0 ns - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on
|
Original
|
PDF
|
1SS400
200mW,
OD-523F
OD-523F
MIL-STD-202,
C/10s
S1404002
|
SC-89
Abstract: diode marking N9 DAN222 n923 diode N9
Text: WEITRON WAN222 Surface Mount Switching Diode SWITCHING DIODE 100m AMPERRES 80 VOLTS Features: *Extremely High Switching Speedff *Low Reverse Leakage Current *Small Outline Surface Mount SC-89 Package *High Reliability SC-89 SOT-523F Applications: Ultra High Speed Switching
|
Original
|
PDF
|
WAN222
SC-89
SC-89
OT-523F)
50BSC
10-Jul-09
DAN222
diode marking N9
DAN222
n923
diode N9
|
transistor dtc114
Abstract: DTC114 df3200 dtc123je ic dtc114 DTC114EE DTC114TE DTC114YE DTC123EE DTC124EE
Text: DTC114EE Series Bias Resistor Transistor NPN Silicon 3 P b Lead Pb -Free COLLECTOR 3 1 2 R1 1 BASE R2 SC-89 (SOT-523F) 2 EMITTER Maximum Ratings (TA=25°C unless otherwise noted) Rating Symbol VCEO VCBO Value 50 Unit V 50 V IC 100 mA Symbol Max Unit PD 200
|
Original
|
PDF
|
DTC114EE
SC-89
OT-523F)
12-Jun-06
DTC114
SC-89
50BSC
transistor dtc114
df3200
dtc123je
ic dtc114
DTC114TE
DTC114YE
DTC123EE
DTC124EE
|
Untitled
Abstract: No abstract text available
Text: FJY3002R NPN Epitaxial Silicon Transistor with Bias Resistor Features Description • 100 mA Output Current Capability • Built-in Bias Resistor R1 = 10 kΩ, R2 = 10 kΩ Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
|
Original
|
PDF
|
FJY3002R
OT-523F
|
FJY3008R
Abstract: FJY4008R CS08E
Text: FJY3008R tm NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=47KΩ, R2=22KΩ • Complement to FJY4008R Eqivalent Circuit C C S08 E B E B SOT - 523F Absolute Maximum Ratings *
|
Original
|
PDF
|
FJY3008R
FJY4008R
FJY3008R
FJY4008R
CS08E
|
FJY3011R
Abstract: FJY4011R
Text: FJY4011R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R=22KΩ • Complement to FJY3011R Eqivalent Circuit C C S61 E B E B SOT - 523F Absolute Maximum Ratings *
|
Original
|
PDF
|
FJY4011R
FJY3011R
FJY3011R
FJY4011R
|
SRC1203EF
Abstract: KSR-4003-000
Text: SRC1203EF Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
|
Original
|
PDF
|
SRC1203EF
OT-523F
KSR-4003-000
SRC1203EF
KSR-4003-000
|
marking code RB
Abstract: SRC1212EF
Text: SRC1212EF Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
|
Original
|
PDF
|
SRC1212EF
OT-523F
KSR-4034-000
marking code RB
SRC1212EF
|
STJ828EF
Abstract: kst40
Text: STJ828EF Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • -2.5V Gate drive. • Low threshold voltage : Vth = -0.5~ -1.5V. • High speed. Ordering Information Type NO.
|
Original
|
PDF
|
STJ828EF
OT-523F
KST-4014-000
-10mA
STJ828EF
kst40
|
IC 4016
Abstract: data sheet for IC 4016 4016 ic data sheet of ic 4016 SRA2219EF
Text: SRA2219EF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
|
Original
|
PDF
|
SRA2219EF
OT-523F
KSR-4016-000
-10mA
-10mA,
-20mA
IC 4016
data sheet for IC 4016
4016 ic
data sheet of ic 4016
SRA2219EF
|
ic 4001 datasheet
Abstract: ic 4001 SRC1201EF
Text: SRC1201EF Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
|
Original
|
PDF
|
SRC1201EF
OT-523F
KSR-4001-000
ic 4001 datasheet
ic 4001
SRC1201EF
|
APPLICATION OF IC 4033
Abstract: data sheet of 4033 SRC1207EF 4033 IC OF SILICON TRANSISTOR IC 4033
Text: SRC1207EF Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
|
Original
|
PDF
|
SRC1207EF
OT-523F
KSR-4033-000
APPLICATION OF IC 4033
data sheet of 4033
SRC1207EF
4033 IC OF SILICON TRANSISTOR
IC 4033
|
Untitled
Abstract: No abstract text available
Text: FJY4008R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=47KΩ, R2=22KΩ • Complement to FJY3008R Eqivalent Circuit C C S58 E B E B SOT - 523F Absolute Maximum Ratings *
|
Original
|
PDF
|
FJY4008R
FJY4008R
FJY3008R
|
FJY3001R
Abstract: FJY4001R S01E
Text: FJY3001R tm NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=4.7KΩ, R2=4.7KΩ • Complement to FJY4001R Eqivalent Circuit C C S01 E B E B SOT - 523F Absolute Maximum Ratings *
|
Original
|
PDF
|
FJY3001R
FJY4001R
FJY3001R
FJY4001R
S01E
|
|
|
FJY3007R
Abstract: FJY4007R transistor S57
Text: FJY4007R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=22KΩ, R2=47KΩ • Complement to FJY3007R Eqivalent Circuit C C S57 E B E B SOT - 523F Absolute Maximum Ratings *
|
Original
|
PDF
|
FJY4007R
FJY3007R
FJY3007R
FJY4007R
transistor S57
|
FJY3013R
Abstract: FJY4013R
Text: FJY3013R tm NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=2.2KΩ, R2=47KΩ • Complement to FJY4013R Eqivalent Circuit C C S13 E B E B SOT - 523F Absolute Maximum Ratings *
|
Original
|
PDF
|
FJY3013R
FJY4013R
FJY3013R
FJY4013R
|
FJY3010R
Abstract: FJY4010R S10EB
Text: FJY3010R tm NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R=10KΩ • Complement to FJY4010R Eqivalent Circuit C C S10 E B E B SOT - 523F Absolute Maximum Ratings *
|
Original
|
PDF
|
FJY3010R
FJY4010R
FJY3010R
FJY4010R
S10EB
|
DTC114
Abstract: transistor dtc114 dtc114 marking 24 DTC114EE DTC114TE DTC114YE DTC123EE DTC124EE DTC143EE DTC143TE
Text: DTC114EE Series Bias Resistor Transistor NPN Silicon 3 P b Lead Pb -Free COLLECTOR 3 1 1 BASE SC-89 (SOT-523F) R2 2 EMITTER Maximum Ratings (TA=25°C unless otherwise noted) Rating 2 R1 Symbol VCEO VCBO Value 50 Unit V 50 V IC 100 mA Symbol Max Unit PD 200
|
Original
|
PDF
|
DTC114EE
SC-89
OT-523F)
12-Jun-06
DTC114
SC-89
50BSC
transistor dtc114
dtc114 marking 24
DTC114TE
DTC114YE
DTC123EE
DTC124EE
DTC143EE
DTC143TE
|
BC847B-1F
Abstract: BC847A BC847B BC847C SC-89
Text: BC847AT/BT/CT COLLECTOR 3 General Purpose Transistor NPN Silicon 33 1 1 BASE 2 SC-89 SOT-523F 2 EMITTER M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous
|
Original
|
PDF
|
BC847AT/BT/CT
SC-89
OT-523F)
BC847A
BC847B
BC847C
SC-89
50BSC
BC847B-1F
|
Untitled
Abstract: No abstract text available
Text: 2SA1774 PNP * “G” Lead Pb -Free 33 1 2 SC-89 (SOT-523F) WEITRON http://www.weitron.com.tw 2SA1774 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Min Typ Max hFE 120 - 560 - VCE(sat) - - -0.5 Vdc Cob - 4.0 5.0 PF
|
Original
|
PDF
|
2SA1774
SC-89
OT-523F)
-12Vdc,
SC-89
50BSC
|
Untitled
Abstract: No abstract text available
Text: BC847AT/BT/CT COLLECTOR 3 General Purpose Transistor NPN Silicon 33 1 1 BASE * “G” Lead Pb -Free 2 SC-89 (SOT-523F) 2 EMITTER M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
|
Original
|
PDF
|
BC847AT/BT/CT
SC-89
OT-523F)
BC847A
BC847B
BC847C
SC-89
50BSC
|
ic 4013
Abstract: ic 4013 DATASHEET 4013 DATASHEET UC 4013 4013 FT 4013 SRA2205EF KSR-4013-000
Text: SRA2205EF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
|
Original
|
PDF
|
SRA2205EF
OT-523F
KSR-4013-000
-10mA
-10mA,
ic 4013
ic 4013 DATASHEET
4013 DATASHEET
UC 4013
4013
FT 4013
SRA2205EF
KSR-4013-000
|
FJY4003R
Abstract: FJY3003R
Text: FJY3003R tm NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=22KΩ, R2=22KΩ • Complement to FJY4003R Eqiuvalent Circuit C C S03 E B E B SOT - 523F Absolute Maximum Ratings *
|
Original
|
PDF
|
FJY3003R
FJY4003R
FJY4003R
FJY3003R
|
circuit diagram wireless spy camera
Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint
|
Original
|
PDF
|
DFN1006D-2
OD882D)
DFN1010D-3
OT1215)
DFN2020MD-6
OT1220)
DFN1608D-2
OD1608)
DSN0603
OD962)
circuit diagram wireless spy camera
PDTB123Y
IP4303CX4
dual cc BAW62
3267 tsop6
PCMF2DFN1
BST60
PUMD4
PDTB123E
PDTA143
|