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    SOT23-6 MARKING 57 Search Results

    SOT23-6 MARKING 57 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    SOT23-6 MARKING 57 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product specification DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF DMN3112S AEC-Q101 J-STD-020 MIL-STD-202,

    DMN3112S

    Abstract: marking ANs J-STD-020D
    Text: DMN3112S N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V


    Original     		PDF DMN3112S AEC-Q101 OT-23 J-STD-020D MIL-STD-202, DS31445 DMN3112S marking ANs J-STD-020D

    Untitled

    Abstract: No abstract text available
    Text: DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features •         Mechanical Data   Low On-Resistance: • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		PDF DMN3112S AEC-Q101 J-STD-020 DS31445

    3K14

    Abstract: N-CHANNEL MOSFET 30V 2A SOT-23 2A MARKING SOT23
    Text: CYStech Electronics Corp. Spec. No. : C427N3 Issued Date : 2008.05.16 Revised Date : Page No. : 1/7 30V N-CHANNEL Enhancement Mode MOSFET MTN3K14N3 Features • VDS=30V RDS ON =39mΩ@VGS=10V, ID=2A RDS(ON)=57mΩ@VGS=4.5V, ID=2A • Low on-resistance • High speed : ton=24ns(typ.), toff=19ns(typ.)


    Original     		PDF C427N3 MTN3K14N3 OT-23 UL94V-0 3K14 N-CHANNEL MOSFET 30V 2A SOT-23 2A MARKING SOT23

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGN USE DMN3110S DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features •         Mechanical Data   Low On-Resistance: • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance


    Original     		PDF DMN3110S DMN3112S AEC-Q101 J-STD-020 DS31445

    Untitled

    Abstract: No abstract text available
    Text: PPJA3415 20V P-Channel Enhancement Mode MOSFET Voltage -20 V -4.0A Current SOT-23 Unit : inch mm Features  RDS(ON) , [email protected], [email protected]<57mΩ  RDS(ON) , [email protected], [email protected]<70mΩ  RDS(ON) , [email protected], [email protected]<95mΩ  Advanced Trench Process Technology


    Original     		PDF PPJA3415 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2014-REV

    Untitled

    Abstract: No abstract text available
    Text: DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		PDF DMN3112S AEC-Q101 J-STD-020 MIL-STD-202, DS31445

    Untitled

    Abstract: No abstract text available
    Text: DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance: 57m @ VGS = 10V 112m @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		PDF DMN3112S AEC-Q101 J-STD-020 MIL-STD-202, DS31445

    rt9161

    Abstract: RT9161A ds916
    Text: 勝特力科技 886-3-5753170 百年電子 86-755-83289224 RT9161/A Http://www.100y.com.tw 300/500mA Low Dropout Linear Voltage Regulator General Description The RT9161/A is a 300/500mA fixed output voltage low dropout linear regulator. Typical ground current is


    Original     		PDF RT9161/A 300/500mA RT9161/A OT-23 300mA) OT-89 OT-223 rt9161 RT9161A ds916

    Untitled

    Abstract: No abstract text available
    Text: TSM2306 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 57 @ VGS =10V 3.5 94 @ VGS =4.5V 2.8 Block Diagram  Advance Trench Process Technology  High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2306 OT-23 TSM2306CX

    c639

    Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05


    Original     		PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423

    z12 smd code sot23

    Abstract: SMD MARKING code 613 sot23 smd code Z70 SMD marking Z4 SMD MARKING CODE Z2 smd code z16 Y11 smd code smd z17 z67 smd marking Z58
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BZX84 series Voltage regulator diodes Product specification Supersedes data of 1996 Apr 26 1999 May 18 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation:


    Original     		PDF M3D088 BZX84 BZX84-A) BZX84-B) BZX84-C) BZX84-C11 BZX84-C12 BZX84-C13 BZX84-C6V8 BZX84-C15 z12 smd code sot23 SMD MARKING code 613 sot23 smd code Z70 SMD marking Z4 SMD MARKING CODE Z2 smd code z16 Y11 smd code smd z17 z67 smd marking Z58

    Zener diode smd marking code S3

    Abstract: SMD CODE MARKING s7 SOT23 Zener diode smd marking code 621 triac 214 215 216 BZX84C5V1 spice smd z70 smd diode B3 SOT23 Z3 marking Zener diode smd marking S4 SMD CODE PACKAGE SOT23 486
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BZX84 series Voltage regulator diodes Product data sheet Supersedes data of 1999 May 18 2003 Apr 10 NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series FEATURES PINNING • Total power dissipation: max. 250 mW


    Original     		PDF M3D088 BZX84 BZX84-A X84-C5V1 BZX84-C5V6 BZX84-C62 BZX84-C68 BZX84-C6V2 BZX84-C6V8 Zener diode smd marking code S3 SMD CODE MARKING s7 SOT23 Zener diode smd marking code 621 triac 214 215 216 BZX84C5V1 spice smd z70 smd diode B3 SOT23 Z3 marking Zener diode smd marking S4 SMD CODE PACKAGE SOT23 486

    transistor C639

    Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W


    Original     		PDF 3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor

    MARKING 68W SOT-23

    Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
    Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06


    Original     		PDF 25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23

    BC848C

    Abstract: BC846 BC846A BC846B BC847A BC847B BC847C BC848A BC848B
    Text: BC846A THRU BC848C Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features NPN Small l Ideally Suited for Automatic Insertion l 150 C Junction Temperature l For Switching and AF Amplifier Applications Signal Transistor


    Original     		PDF BC846A BC848C 310mW OT-23, OT-23 MIL-STD-202, BC846B BC847A BC847B BC848C BC846 BC846A BC846B BC847A BC847B BC847C BC848A BC848B

    transistor marking s79

    Abstract: sot-23 marking code .S79 s79 marking code s79 IC marking Marking S79 marking code s79 sot-23 marking s79 BCX70G BCX70HE BCX70H
    Text: BCX70G THRU BCX70K Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features NPN Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l Low Current, Low Voltage l For Switching and AF Amplifier applications.


    Original     		PDF BCX70G BCX70K 150oC 250mW OT-23 OT-23, MIL-STD-202, BCX70J transistor marking s79 sot-23 marking code .S79 s79 marking code s79 IC marking Marking S79 marking code s79 sot-23 marking s79 BCX70G BCX70HE BCX70H

    transistor Bc 540

    Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W


    Original     		PDF 0-02V 0-03W 3-02V 3-02W 3-03W 3-04W 3-05W 3-06W 4-02V 4-02W transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89

    Untitled

    Abstract: No abstract text available
    Text: TSM2306 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 57 @ VGS = 10V 3.5 94 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2306 OT-23 TSM2306CX

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    MMBD1503A

    Abstract: MMBD1503 MMBD1501 MMBD1501A MMBD1504 MMBD1504A MMBD1505 MMBD1505A a14 sot-23 marking a14 sot marking
    Text: MMBD1501 A THRU MMBD1505(A) Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features High Conductance l Low Leakage l Surface Mount Package Ideally Suited for Automatic Insertion Low Leakage Diode o l 150 C Junction Temperature


    Original     		PDF MMBD1501 MMBD1505 350mW OT-23 OT-23, MIL-STD-202, MMBD1501 MMBD1503 MMBD1503A MMBD1503 MMBD1501A MMBD1504 MMBD1504A MMBD1505A a14 sot-23 marking a14 sot marking

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    68w11

    Abstract: marking code 27E SOT 23 sot23 marking code tab MARKING 27E marking code 27e 000012a kn sot23 68-W11 sot-23 Marking yr F 7389
    Text: 3 i a m a b ooooizfi 4 • 57E D ELECTRO-FILMS INC The Electro-Films, Inc. Micro Divider provides the optim um in precision, stability, and size for all surface m ount potential divider applications. It is molded in an SOT-23 style package with total resistor


    OCR Scan     		PDF OT-23 OT-23. 000012a -520ppm -25ppm 68w11 marking code 27E SOT 23 sot23 marking code tab MARKING 27E marking code 27e kn sot23 68-W11 sot-23 Marking yr F 7389

    c639

    Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
    Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04


    OCR Scan     		PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN