|
TTC5886A
|
|
Toshiba Electronic Devices & Storage Corporation
|
NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns |
|
|
|
TTA2097
|
|
Toshiba Electronic Devices & Storage Corporation
|
PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns |
|
|
|
TBAW56
|
|
Toshiba Electronic Devices & Storage Corporation
|
Switching Diode, 80 V, 0.215 A, SOT23 |
|
|
|
MX0912B251Y
|
|
Rochester Electronics LLC
|
MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) |
|
|
|
CA3083Z-G
|
|
Rochester Electronics LLC
|
CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY |
|
|
