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    SOT23 12P Search Results

    SOT23 12P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL28114SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL28113SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    51730-236LF Amphenol Communications Solutions PwrBlade®, Power Supply Connectors, 12P 24S 12P Right Angle Header. Visit Amphenol Communications Solutions
    51940-179LF Amphenol Communications Solutions PwrBlade®, Power Supply Connectors, 12P 12S 12P Vertical Receptacle. Visit Amphenol Communications Solutions

    SOT23 12P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EL5191C

    Abstract: EL5192C EL5192CW5-T13 EL5192CW5-T7 EL5192CW6-T7 EL5193C EL5292C EL5293C EL5392C EL5393C
    Text: 600MHz Current Feedback Amplifier Features General Description • 600MHz -3dB bandwidth • 6mA supply current • Single and dual supply operation, from 5V to 10V supply span • Power-down 8-pin SOIC and SOT23-6 only • Available in SOT23-5 and SOT236 packages


    Original     		PDF 600MHz OT23-6 OT23-5 OT236 EL5292C) EL5392C) EL5191C) 300MHz EL5193C, EL5191C EL5192C EL5192CW5-T13 EL5192CW5-T7 EL5192CW6-T7 EL5193C EL5292C EL5293C EL5392C EL5393C

    HC-49S Hosonic

    Abstract: HC49S hosonic
    Text: MICRF113 300MHz to 450MHz +10dBm ASK Transmitter in SOT23 General Description Features The MICRF113 is a high-performance, easy-to-use, singlechip ASK Transmitter IC for remote wireless applications in the 300MHz to 450MHz frequency band. This transmitter


    Original     		PDF MICRF113 300MHz 450MHz 10dBm MICRF113 450MHz HC-49S Hosonic HC49S hosonic

    rf transmitter receiver 315mhz circuit diagram us

    Abstract: ASK 315MHZ Murata, crystal oscillator TX113-1C GQM1875C2E4R7C GRM1885C1H101J GRM21BR60J106K HC49S MICRF113 MICRF113YM6
    Text: MICRF113 300MHz to 450MHz +10dBm ASK Transmitter in SOT23 General Description Features The MICRF113 is a high-performance, easy-to-use, singlechip ASK Transmitter IC for remote wireless applications in the 300MHz to 450MHz frequency band. This transmitter


    Original     		PDF MICRF113 300MHz 450MHz 10dBm MICRF113 450MHz rf transmitter receiver 315mhz circuit diagram us ASK 315MHZ Murata, crystal oscillator TX113-1C GQM1875C2E4R7C GRM1885C1H101J GRM21BR60J106K HC49S MICRF113YM6

    433-92mhz rf model

    Abstract: Hosonic MICRF113 433.92mhz rf ic ASK 315MHZ 433.92MHz loop antenna design 433.92mhz rf receiver murata antenna MICRF113YM6 antenna murata 433
    Text: MICRF113 300MHz to 450MHz +10dBm ASK Transmitter in SOT23 General Description Features The MICRF113 is a high-performance, easy-to-use, singlechip ASK Transmitter IC for remote wireless applications in the 300MHz to 450MHz frequency band. This transmitter


    Original     		PDF MICRF113 300MHz 450MHz 10dBm MICRF113 450MHz 433-92mhz rf model Hosonic 433.92mhz rf ic ASK 315MHZ 433.92MHz loop antenna design 433.92mhz rf receiver murata antenna MICRF113YM6 antenna murata 433

    EL5191C

    Abstract: EL5192C EL5192CS EL5192CW-T13 EL5192CW-T7 EL5193C EL5292C EL5293C EL5392C EL5393C
    Text: EL5192C EL5192C 600MHz Current Feedback Amplifier Features General Description • 600MHz -3dB bandwidth • 6mA supply current • Single and dual supply operation, from 5V to 10V supply span • Available in 5-pin SOT23 package • Dual EL5292C and triple


    Original     		PDF EL5192C 600MHz EL5292C) EL5392C) EL5191C) 300MHz EL5193C, EL5293C, EL5191C EL5192C EL5192CS EL5192CW-T13 EL5192CW-T7 EL5193C EL5292C EL5293C EL5392C EL5393C

    Untitled

    Abstract: No abstract text available
    Text: 600MHz Current Feedback Amplifier with Enable Features General Description • 600MHz -3dB bandwidth • 6mA supply current • Single and dual supply operation, from 5V to 10V supply span • Fast enable/disable EL5192AC only • Available in SOT23 packages


    Original     		PDF EL5192C, EL5192AC 600MHz EL5192AC EL5292C) EL5392C) EL5191C)

    PL611s-18

    Abstract: SC70-6L 18XXX 24v 6-pin smd
    Text: Preliminary PL611s-18 0.5kHz-125MHz MHz to KHz Programmable Clock T M FEATURES DESCRIPTION • Designed for Very Low-Power applications • Offered in Tiny GREEN/RoHS compliant packages o 6-pin DFN (2.0mmx1.3mmx0.6mm) o 6-pin SC70 (2.3mmx2.25mmx1.0mm) o 6-pin SOT23 (3.0mmx3.0mmx1.35mm)


    Original     		PDF PL611s-18 5kHz-125MHz 25mmx1 10MHz 50MHz 125MHz 125MHz 65MHz 90MHz PL611s-18 SC70-6L 18XXX 24v 6-pin smd

    br 2222 npn

    Abstract: SMBT2222A SMBT2907A
    Text: SMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBT2222A SMBT2907A VPS05161 2222/A EHP00744 EHP00745 May-29-2001 br 2222 npn SMBT2222A SMBT2907A

    MARKING s1P

    Abstract: 99V0
    Text: SMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBT2222A SMBT2907A VPS05161 Nov-30-2001 2222/A EHP00742 EHP00743 MARKING s1P 99V0

    Untitled

    Abstract: No abstract text available
    Text: SMBT2907A PNP Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2222A NPN 2 1 Type Marking SMBT2907A s2F Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBT2907A SMBT2222A VPS05161 Jul-11-2001 2907/A EHP00752 EHP00753

    npn 2222 transistor

    Abstract: s1P SOT23 SMBT2222A SOT23 SMBT2222A SMBT2907A MARKING s1P MARKING 1B SOT23 EHN00056
    Text: SMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBT2222A SMBT2907A VPS05161 2222/A EHP00744 EHP00745 Jul-11-2001 npn 2222 transistor s1P SOT23 SMBT2222A SOT23 SMBT2222A SMBT2907A MARKING s1P MARKING 1B SOT23 EHN00056

    1030mhz oscillator

    Abstract: ic lg 631 967m TQ3131 TQ5131 LG 631 IC
    Text: WIRELESS COMMUNICATIONS DIVISION TQ5131 RF IN VDD GND LO IN DATA SHEET 3V Cellular Band CDMA/AMPS RFA/Mixer IC Mode Select/ LO Input IFA Gain Select GIC CDMA IF IF Out Out IF Out AMP's IF Out Features Small size: SOT23-8 Single 3V operation Product Description


    Original     		PDF TQ5131 OT23-8 TQ5131 IS-95 TQ3131 800MHz 1030mhz oscillator ic lg 631 967m TQ3131 LG 631 IC

    BSS79

    Abstract: No abstract text available
    Text: BSS79, BSS81 NPN Silicon Switching Transistors 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E


    Original     		PDF BSS79, BSS81 BSS80, BSS82 VPS05161 BSS79B BSS79C BSS81B BSS81C BSS79

    BSS81C

    Abstract: BSS79 BSS79B BSS79C BSS80 BSS81 BSS81B BSS82
    Text: BSS79, BSS81 NPN Silicon Switching Transistors 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E


    Original     		PDF BSS79, BSS81 BSS80, BSS82 BSS79B BSS79C BSS81B BSS81C BSS79 BSS81C BSS79 BSS79B BSS79C BSS80 BSS81 BSS81B BSS82

    gic 1990

    Abstract: C13 SOT23-8 TQ3631 TQ5631
    Text: WIRELESS COMMUNICATIONS DIVISION TQ5631 GND RF IN GND VDD IF out VDD DATA SHEET 3V PCS Band CDMA RFA/Mixer IC LO IN GIC Features Small size: SOT23-8 Single 3V operation Low-current operation Product Description Gain Select The TQ5631 is a 3V, RFAmplifier/Mixer IC designed specifically for PCS band CDMA


    Original     		PDF TQ5631 OT23-8 TQ5631 IS-95 TQ3631 1900MHz gic 1990 C13 SOT23-8 TQ3631

    Untitled

    Abstract: No abstract text available
    Text: S9012LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value -20 -40 -5 -500 300 2.4 417 S9012PLT1=12P S9012QLT1=12Q S9012RLT1=12R -0.1 -20 -40 -100 -5.0 -100 -35 -4.0 WEITRON http://www.weitron.com.tw S9012SLT1=12S 1/2 -0.15 u -0.15


    Original     		PDF S9012LT1 OT-23 S9012PLT1 S9012QLT1 S9012RLT1 S9012SLT1 28-Apr-2011 -50mAdc)

    marking 12Q SOT-23

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L9012PLT1G PNP Silicon Series FEATURE We declare that the material of product compliance with RoHS requirements. 3 DEVICE MARKING AND ORDERING INFORMATION Device 1 Marking Shipping L9012PLT1G 12P 3000/Tape&Reel


    Original     		PDF L9012PLT1G 3000/Tape L9012PLT3G 10000/Tape L9012QLT1G L9012QLT3G L9012RLT1G marking 12Q SOT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L9012PLT1G PNP Silicon Series FEATURE We declare that the material of product compliance with RoHS requirements. 3 DEVICE MARKING AND ORDERING INFORMATION Device 1 Marking Shipping 12P 3000/Tape&Reel L9012PLT1G


    Original     		PDF L9012PLT1G 3000/Tape OT-23 O-236AB) L9012PLT3G 10000/Tape L9012QLT1G L9012QLT3G

    L9012QLT1G

    Abstract: L9012RLT1G L9012SLT1G L9012 L9012PLT1G ,MARKING 12p SOT-23
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L9012PLT1G PNP Silicon Series FEATURE We declare that the material of product compliance with RoHS requirements. 3 DEVICE MARKING AND ORDERING INFORMATION Device 1 Marking Shipping L9012PLT1G 12P 3000/Tape&Reel


    Original     		PDF L9012PLT1G 3000/Tape L9012PLT3G 10000/Tape L9012QLT1G L9012QLT3G L9012RLT1G L9012QLT1G L9012RLT1G L9012SLT1G L9012 L9012PLT1G ,MARKING 12p SOT-23

    pnp 12Q

    Abstract: L9012RLT1G MARKING 12p SOT-23 L9012QLT1G L9012PLT1G L9012SLT1G ,MARKING 12p SOT-23 12p sot-23
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L9012PLT1G PNP Silicon Series FEATURE We declare that the material of product compliance with RoHS requirements. 3 DEVICE MARKING AND ORDERING INFORMATION Device 1 Marking Shipping L9012PLT1G 12P 3000/Tape&Reel


    Original     		PDF L9012PLT1G 3000/Tape L9012PLT3G 10000/Tape L9012QLT1G L9012QLT3G L9012RLT1G pnp 12Q L9012RLT1G MARKING 12p SOT-23 L9012QLT1G L9012PLT1G L9012SLT1G ,MARKING 12p SOT-23 12p sot-23

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    PT116

    Abstract: pt136 PC821 PT137 max1987 Samsung R590 pt118 PC807 samsung r540 samsung R530
    Text: 7 Schematic Diagrams and PCB Silkscreen This Document can not be used without Samsung’s authorization. 7-1-4 PCB SilkScreen 7-104 P30 This Document can not be used without Samsung’s authorization. P30 7 Schematic Diagrams and PCB Silkscreen 7-105 7 Schematic Diagrams and PCB Silkscreen


    Original     		PDF B10EX B11EX B12EX B13EX B14EX B15EX B16EX B17EX B18EX B19EX PT116 pt136 PC821 PT137 max1987 Samsung R590 pt118 PC807 samsung r540 samsung R530

    EMK107BJ104MA

    Abstract: capacitor 1200uf 16v 10MV1200AX 2.2M ohm resistor 6034 ceramic capacitor 820pF Transistor Mosfet N-Ch 30V DO5022P-472HC FDS6614A 33163
    Text: 91% Efficient 12V to 3.3V, 6A Step-down Converter 10.8V to 13.2V VIN 5V BIAS C1 4.7uF 10V X5R R1 2.2M 5 IN 1 HSD BST 2 COMP U1 MAX1954 C3 12pF C2 470pF C5 10uF 25V X5R 2x D1 CMPSH-3 DH 10 8 C4 0.1uF 9 N1 FDS 6614A L1 4.7uH DO5022P472HC 3.3V @ 6A VOUT LX


    Original     		PDF MAX1954 470pF DO5022P472HC 820pF 1200uF 20MHz 50mVpp LMK316BJ475ML 470pF EMK107BJ104MA EMK107BJ104MA capacitor 1200uf 16v 10MV1200AX 2.2M ohm resistor 6034 ceramic capacitor 820pF Transistor Mosfet N-Ch 30V DO5022P-472HC FDS6614A 33163

    SOR2222

    Abstract: 2SC944 1G335 MM1613 12p sot-23 NEC SOT-23 SOT23 25N 224AA bsw84
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 PN2221A 2N2218A HSEl64 SOR3903 (A) 2N2224 SOR2222A (A) BFX17 BFX17 BFX17 MM1613 ~~i:~~ 15 20 BSS79B BSS79B TMPT2221A BSW84 TP2218A TP2221A MMBT4401 MMBT4401 ~~~b~401 25 30 TIS111 TIS111 2N2221A


    Original     		PDF PN2221A 2N2218A HSEl64 SOR3903 2N2224 SOR2222A BFX17 MM1613 SOR2222 2SC944 1G335 12p sot-23 NEC SOT-23 SOT23 25N 224AA bsw84