BSP123
Abstract: E6327 Q67000-S306
Text: Rev. 1.0 SIPMOS Small-Signal-Transistor BSP123 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.37 A SOT223 Type Package Ordering Code Tape and Reel Information Marking BSP123 SOT223
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BSP123
OT223
Q67000-S306
E6327:
BSP123
E6327
Q67000-S306
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triac z0109mn
Abstract: z0109mn semiconductors Z0109mn SC-73 Z0103
Text: Z0109MN Logic level four-quadrant triac Rev. 04 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate 4-Q triac in a SOT223 surface-mountable plastic package 1.2 Features and benefits Direct interfacing to logic level ICs
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Z0109MN
OT223
triac z0109mn
z0109mn
semiconductors Z0109mn
SC-73
Z0103
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Z0107NN
Abstract: SC-73 Z0103
Text: Z0107NN Logic level four-quadrant triac Rev. 04 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate 4-Q triac in a SOT223 surface-mountable plastic package 1.2 Features and benefits Direct interfacing to logic level ICs
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Z0107NN
OT223
Z0107NN
SC-73
Z0103
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Z0103MN
Abstract: SC-73 Z0103 Z0103MN,135
Text: Z0103MN Logic level four-quadrant triac Rev. 04 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate 4-Q triac in a SOT223 surface-mountable plastic package 1.2 Features and benefits Direct interfacing to logic level ICs
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Z0103MN
OT223
Z0103MN
SC-73
Z0103
Z0103MN,135
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Z0109NN
Abstract: HD radio nxp application SC-73 Z0103
Text: Z0109NN Logic level four-quadrant triac Rev. 04 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate 4-Q triac in a SOT223 surface-mountable plastic package 1.2 Features and benefits Direct interfacing to logic level ICs
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Z0109NN
OT223
Z0109NN
HD radio nxp application
SC-73
Z0103
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FR4 dielectric constant 4.6
Abstract: C5 MARKING TRANSISTOR SiGe POWER TRANSISTOR THN6701B R6701 transistor 1608 L28 marking
Text: Preliminary Specification THN6701B NPN SiGe RF POWER TRANSISTOR Unit in mm SOT223 □ Applications 6.5 - UHF and VHF wide band amplifier 3.0 4 - High power gain 7.0 3.5 □ Features MAG = 15 dB @ VCE = 6 V, IC = 400 mA, f = 465 MHz - High power 1 POUT = 35 dBm 3W @ VCE = 6 V, ICQ = 50 mA, f = 465 MHz
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THN6701B
OT223
FR4 dielectric constant 4.6
C5 MARKING TRANSISTOR
SiGe POWER TRANSISTOR
THN6701B
R6701
transistor 1608
L28 marking
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Z0103NN
Abstract: HD radio nxp application SC-73 Z0103
Text: Z0103NN Logic level four-quadrant triac Rev. 04 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate 4-Q triac in a SOT223 surface-mountable plastic package 1.2 Features and benefits Direct interfacing to logic level ICs
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Z0103NN
OT223
Z0103NN
HD radio nxp application
SC-73
Z0103
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Z0107MN
Abstract: HD radio nxp application SC-73 Z0103
Text: Z0107MN Logic level four-quadrant triac Rev. 04 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate 4-Q triac in a SOT223 surface-mountable plastic package 1.2 Features and benefits Direct interfacing to logic level ICs
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Z0107MN
OT223
Z0107MN
HD radio nxp application
SC-73
Z0103
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Untitled
Abstract: No abstract text available
Text: BSP89 Rev. 2.2 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS RDS on · Enhancement mode ID · Logic Level 240 V 6 W 0.35 A PG-SOT223 · dv/dt rated • Pb-free lead plating; RoHS compliant 4.5V rated lead plating; RoHS compliant
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BSP89
PG-SOT223
IEC61249Â
H6327:
VPS05163
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BSP123
Abstract: L6327 MAX6114
Text: Rev. 1.5 SIPMOS Small-Signal-Transistor BSP123 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.37 A PG-SOT223 • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101
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BSP123
PG-SOT223
L6433:
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BSP123
L6327
MAX6114
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smd diode marking 271
Abstract: SIPMOS N-channel Small-Signal-Transistor
Text: BSP89 Rev. 2.1 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS RDS on · Enhancement mode ID · Logic Level 240 V 6 W 0.35 A PG-SOT223 · dv/dt rated • Pb-free lead plating; RoHS compliant 4.5V rated lead plating; RoHS compliant
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BSP89
PG-SOT223
VPS05163
L6327:
smd diode marking 271
SIPMOS N-channel Small-Signal-Transistor
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BSP123
Abstract: E6327 L6327
Text: Rev. 1.2 SIPMOS Small-Signal-Transistor BSP123 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.37 A PG-SOT223 • Pb-free lead plating; RoHS compliant Type Package Tape and Reel Information
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BSP123
PG-SOT223
P-SOT223
E6327:
L6327:
BSP123
E6327
L6327
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Untitled
Abstract: No abstract text available
Text: Rev. 1.5 SIPMOS Small-Signal-Transistor BSP123 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.37 A PG-SOT223 • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101
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BSP123
PG-SOT223
BSP123
PG-SOT223
L6433:
L6327:
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BSP123
Abstract: L6327
Text: Rev. 1.3 SIPMOS Small-Signal-Transistor BSP123 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.37 A PG-SOT223 • Pb-free lead plating; RoHS compliant Type Package Tape and Reel Information
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BSP123
PG-SOT223
L6433:
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L6327
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bsp88
Abstract: L6327 VPS05163
Text: BSP88 Rev. 2.1 SIPMOS Ò Small-Signal-Transistor Product Summary Feature VDS • N-Channel 240 V 6 W 0.35 A RDS on · Enhancement mode ID · Logic Level · dv/dt rated PG-SOT223 • Pb-free lead plating; RoHS compliant rated Pb-free lead plating; RoHS compliant
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BSP88
PG-SOT223
L6327:
VPS05163
bsp88
L6327
VPS05163
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Untitled
Abstract: No abstract text available
Text: BSP88 Rev. 2.2 SIPMOS Ò Small-Signal-Transistor Product Summary Feature VDS • N-Channel 240 V 6 W 0.35 A RDS on · Enhancement mode ID · Logic Level · dv/dt rated PG-SOT223 • Pb-free lead plating; RoHS compliant rated Pb-free lead plating; RoHS compliant
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BSP88
PG-SOT223
IEC61249Â
H6327:
VPS05163
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Untitled
Abstract: No abstract text available
Text: Rev. 1.1 SIPMOS Small-Signal-Transistor BSP123 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.37 A PG-SOT223 • Pb-free lead plating; RoHS compliant Type Package Ordering Code Tape and Reel Information
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BSP123
PG-SOT223
Q67000-S306
E6327:
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MT29EN
Abstract: No abstract text available
Text: SO T2 23 PMT29EN 30 V, 6 A N-channel Trench MOSFET Rev. 1 — 31 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMT29EN
OT223
SC-73)
MT29EN
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BSP129
Abstract: No abstract text available
Text: BSP129 SIPMOS Small-Signal-Transistor Product Summary Features V DS • N-channel 240 V 6 Ω 0.05 A R DS on ,max • Depletion mode I DSS,min • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead plating; RoHS compliant PG-SOT223
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BSP129
PG-SOT223
BSP129
PG-SOT223
L6327:
L6906:
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BSP129
Abstract: No abstract text available
Text: BSP129 SIPMOS Small-Signal-Transistor Product Summary Features VDS • N-channel 240 V 6 W 0.05 A RDS on ,max • Depletion mode IDSS,min • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead plating; RoHS compliant PG-SOT223 • Qualified according to AEC Q101
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BSP129
IEC61249221
PG-SOT223
BSP129
PG-SOT223
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Untitled
Abstract: No abstract text available
Text: BSP129 SIPMOS Small-Signal-Transistor Product Summary Features VDS • N-channel 240 V 6 W 0.05 A RDS on ,max • Depletion mode IDSS,min • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead plating; RoHS compliant PG-SOT223 • Qualified according to AEC Q101
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BSP129
PG-SOT223
BSP129
PG-SOT223
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652 smd
Abstract: BDS650 IR P 648 H BDS644 BDS646 BDS648 BDS652
Text: PHILIPS INTERNATIONAL SbE » • 71iaâSb~0GM31SS M73 mTtmT Philips Components Data sheet status P rod uct specification date of issue April 1991 B D S 6 4 4 /6 4 6 /6 4 8 /6 5 0 /6 5 2 PNP Silicon Darlington power transistors PIN N IN G - SOT223 DESCRIPTIO N
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711002b
bds644/646/648/650/652
OT223)
BDS643/645/647/649/651.
BDS644
BDS646
BDS648
BDS650
BDS652
652 smd
IR P 648 H
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BDS61A
Abstract: smd npn darlington BDS61 BDS61B Darlington NPN Silicon Diode BDS61C smd diode LC 61 SMD 547 DIODE
Text: Philip» Comportants Datasheet status Product specification data of issue Apr* 1991 BDS 6 1 /6 1 A /6 1 B /6 1 C NPN Silicon Darlington power transistors DESCRIPTIO N PINNING - SOT223 DESCRIPTIO N base collector emitter collector PIN 1 2 3 4 NPN Silicon power transistors in a
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BDS61
OT223)
BDS60/60A/60B/60C.
OT223
BDS61A
BDS61B
BDS61C
smd npn darlington
Darlington NPN Silicon Diode
smd diode LC 61
SMD 547 DIODE
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SM-8 Package
Abstract: S08PACKAGE T8 SOT23
Text: Voltage Regulator Connection Diagrams S0 8 Package Suffix - N8 1 SOT223 4 2 - - 7 1E 2C 3 - - 6 3 C Top View > Top View Pin 4 floating or connected to pin 2 SOT23 Package Suffix - F T092 3d □ 1 2C Top View SM 8 Package Suffix - G Package Suffix - T8
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OT223
SM-8 Package
S08PACKAGE
T8 SOT23
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