marking AG SOT 89
Abstract: TR13
Text: Package Details - SOT-89 Mechanical Drawing BOTTOM VIEW Lead Code: Reference individual device datasheet. Part Marking: Full Part Number. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R3 (5-November 2007)
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OT-89
EIA-481-1-A
marking AG SOT 89
TR13
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TR13
Abstract: sot-89 MARKING CODE au
Text: Package Details - SOT-89 Mechanical Drawing BOTTOM VIEW Lead Code: Reference individual device datasheet. Part Marking: Full Part Number. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R3 (5-November 2007)
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OT-89
EIA-481-1-A
la40-31-5
26-October
TR13
sot-89 MARKING CODE au
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Untitled
Abstract: No abstract text available
Text: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Pb−Free Packages are Available
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NTA4153N,
NTE4153N
SC-75
SC-89
NTE4153N
SC-89*
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAW56WT1G z Pb-Free Package is Available. 3 DEVICE MARKING 1 LBAW56WT1G = A1 2 MAXIMUM RATINGS TA = 25°C CASE 419–04, STYLE 4 Rating Symbol Max Unit Reverse Voltag VR Forward Current Peak Forward Surge Current
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LBAW56WT1G
3000/Tape
LBAW56WT3G
10000/Tape
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diode T3 Marking
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
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LM1MA141WKT1G
LM1MA142WKT1G
SC-70
70/SOTâ
LM1MA141WKT1G
diode T3 Marking
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LBC817-40WT1G 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 45 V Collector–Base Voltage
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LBC817-40WT1G
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476A diode
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–89 package which is designed for low
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LDAN222T1
SC-89
476A diode
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TRANSISTOR SMD MARKING CODE A45
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1G FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device LMSB709LT1G
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LMSB709LT1G
LMSB709LT3G
3000/Tape
10000/Tape
OT-23
TRANSISTOR SMD MARKING CODE A45
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed LM1MA141KT1G LM1MA142KT1G switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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LM1MA141KT1G
LM1MA142KT1G
70/SOTâ
OT-323/SC-70
3000/Tape
LM1MA141KT3G
10000/Tape
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NTA4153N
Abstract: NTA4153NT1 NTA4153NT1G NTE4153N NTE4153NT1G
Text: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Pb−Free Packages are Available
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NTA4153N,
NTE4153N
SC-75
SC-89
NTA4153N/D
NTA4153N
NTA4153NT1
NTA4153NT1G
NTE4153N
NTE4153NT1G
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178 15T
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9015TLT1G FEATURE 3 ƽComplementary to L9014. ƽPb-Free package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping SOT– 23 L9015TLT1G 15T 3000/Tape&Reel L9015TLT3G
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L9015TLT1G
L9014.
3000/Tape
L9015TLT3G
10000/Tape
178 15T
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ahr 49 transistor
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB
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L2SB1197KXLT1G
L2SD1781K
236AB)
L2SB1197KQLT1G
3000/Tape
L2SB1197KQLT3G
10000/Tape
L2SB1197KRLT1G
L2SB1197KRLT3G
ahr 49 transistor
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. NPN General Purpose Amplifier Transistors Surface Mount Pb-Free Package is available. LMSD601–RLT1G LMSD601–SLT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMSD601-RLT1G YR 3000/Tape&Reel LMSD601-RLT3G YR
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LMSD601â
LMSD601-RLT1G
3000/Tape
LMSD601-RLT3G
10000/Tape
LMSD601-SLT1G
LMSD601-SLT3G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistors NPN Silicon LMBT2222AWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which 3 COLLECTOR is designed for low power surface mount
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LMBT2222AWT1G
323/SCâ
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20HT1G z Pb-Free Package is Available. 1 z Device Marking: JR 1 CATHODE 2 ANODE 2 SOD– 323 MARKING DIAGRAM Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR
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LBAS20HT1G
3000/Tape
LBAS20HT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel
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LBAS21HT1G
3000/Tape
LBAS21HT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Pb−Free Package is Available. ORDERING INFORMATION Device L2SC2412KXLT1G Marking Shipping L2SC2412KQLT1G BQ 3000 Tape & Reel L2SC2412KQLT3G BQ 10000 Tape & Reel L2SC2412KRLT1G BR 3000 Tape & Reel
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L2SC2412KXLT1G
L2SC2412KQLT1G
L2SC2412KQLT3G
L2SC2412KRLT1G
L2SC2412KRLT3G
L2SC2412KSLT1G
L2SC2412KSLT3G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Surface Mount Schotty Diode z Applications LRB501V-40T1G Low current rectification z Features 1 1 Small surface mounting type. 2) High reliability. 3) Pb-Free package is available. 2 z Construction SOD-323 Silicon epitaxial planar
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LRB501V-40T1G
OD-323
3000/Tape
LRB501V-40T3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Surface Mount Schotty Diode LRB500V-40T1G zApplications Low current rectification 1 zFeatures 1 Small surface mounting type. 2) Low IR. IR=70nA Typ.) 3) High reliability. 4) Pb-Free package is available. 2 SOD-323 zConstruction
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LRB500V-40T1G
OD-323
3000/Tape
LRB500V-40T3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS184LT1G Featrues z Low forward voltage : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) 3 z Small total capacitance : CT = 0.9pF (typ.) 1 z Pb-Free Package is Available.
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L1SS184LT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Silicon PNP Epitaxial Planer Transistor L4401DW1T1G z Pb-Free Package is Available. MAXIMUM RATINGS Symbol Ratings Unit Collector-Emitter Voltage Parameter VCEO -50 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -6
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L4401DW1T1G
L4401DW1T1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050XLT1G FEATURE 3 ƽHigh current capacity in compact package. IC = 0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L8050 ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION
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L8050XLT1G
L8050
L8050PLT1G
3000/Tape
L8050PLT3G
10000/Tape
L8050QLT1G
L8050QLT3G
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2sc4672 marking
Abstract: 2SC4672 transistor dk 50 5F marking code transistor dk transistor TRANSISTOR dk q FR210 ZI Marking Code transistor TRANSISTOR 2SC T100
Text: 2SC4672 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SC4672; D K *, where ★ is hFE code • 2SC4672 (MPT3) s _t 0o -2 4/i .5 .i 1.6±0.1 IS". if low collector saturation voltage,
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OCR Scan
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2SC4672
OT-89,
SC-62)
2SC4672;
2sc4672 marking
2SC4672
transistor dk 50
5F marking code transistor
dk transistor
TRANSISTOR dk q
FR210
ZI Marking Code transistor
TRANSISTOR 2SC
T100
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Untitled
Abstract: No abstract text available
Text: 2SD2150 Transistor, NPN Features Dimensions Units : mm • • • available in MPT3 (MPT, SOT-89, SC-62) package package marking: 2SD2150; CF^, where ★ is hFE code 2SD2150 (MPT3) +0.2 4 .5 - 0 .1 lf> 1.6 *0.1 I If excellent current-to-gain characteristics
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2SD2150
OT-89,
SC-62)
2SD2150;
2SD2150
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