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    SOT-23-6 N-CHANNEL MOSFET Search Results

    SOT-23-6 N-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23-6 N-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139

    Untitled

    Abstract: No abstract text available
    Text: APM2700AC Dual Enhancement Mode MOSFET N- and P-Channel Features • Pin Description N-Channel 20V/2A, RDS(ON)= 125mΩ(typ.) @ VGS= 4.5V RDS(ON)= 175mΩ(typ.) @ VGS= 2.5V RDS(ON)= 280mΩ(typ.) @ VGS= 1.8V • P-Channel Top View of SOT-23-6 -20V/-1.4A,


    Original     		PDF APM2700AC OT-23-6 -20V/-1

    APM2700A

    Abstract: APM2700AC STD-020C
    Text: APM2700AC Dual Enhancement Mode MOSFET N- and P-Channel Features • Pin Description N-Channel 20V/2A, RDS(ON)= 125mΩ(typ.) @ VGS= 4.5V RDS(ON)= 175mΩ(typ.) @ VGS= 2.5V RDS(ON)= 280mΩ(typ.) @ VGS= 1.8V • P-Channel Top View of SOT-23-6 -20V/-1.4A,


    Original     		PDF APM2700AC OT-23-6 -20V/-1 APM2700A APM2700AC STD-020C

    APM2700AC

    Abstract: APM2700A MOSFET P SOT-23 S1 SOT-23-6 SOT-23 marking 2f p-Channel ISD05 sot-23-6 n-channel mosfet
    Text: APM2700AC Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel 20V/2A, D1 RDS(ON)= 125mΩ(typ.) @ VGS= 4.5V S1 D2 RDS(ON)= 175mΩ(typ.) @ VGS= 2.5V RDS(ON)= 280mΩ(typ.) @ VGS= 1.8V • G1 S2 G2 P-Channel Top View of SOT-23-6


    Original     		PDF APM2700AC OT-23-6 -20V/-1 APM2700AC APM2700A MOSFET P SOT-23 S1 SOT-23-6 SOT-23 marking 2f p-Channel ISD05 sot-23-6 n-channel mosfet

    APM2701AC

    Abstract: APM2701A apm2701 A104 diode MOSFET P-channel SOT-23-6 AAAX sot 26 Dual N-Channel MOSFET
    Text: APM2701AC Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel D1 20V/3A, S1 D2 RDS(ON)=50mΩ(typ.) @ VGS=4.5V RDS(ON)=65mΩ(typ.) @ VGS=2.5V • G1 P-Channel S2 G2 Top View of SOT-23-6 -20V/-2A, RDS(ON)=90mΩ(typ.) @ VGS=-4.5V


    Original     		PDF APM2701AC -20V/-2A, OT-23-6 APM2701A OT-23-6 JESD-22, APM2701AC apm2701 A104 diode MOSFET P-channel SOT-23-6 AAAX sot 26 Dual N-Channel MOSFET

    mosfet "marking code 44" sot-23-6

    Abstract: APM2706C MOSFET N SOT-23 STD-020C apm27 AB SOT-23-6
    Text: APM2706C Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel D1 S1 30V/3A, D2 RDS(ON)= 55mΩ(typ.) @ VGS= 10V RDS(ON)= 80mΩ(typ.) @ VGS= 4.5V • G1 P-Channel S2 G2 -30V/-2.2A, Top View of SOT-23-6 RDS(ON)= 100mΩ(typ.) @ VGS= -10V


    Original     		PDF APM2706C -30V/-2 OT-23-6 mosfet "marking code 44" sot-23-6 APM2706C MOSFET N SOT-23 STD-020C apm27 AB SOT-23-6

    Untitled

    Abstract: No abstract text available
    Text: SMD Type MOSFET Complementary PowerTrench MOSFET KDC6020C FDC6020C ( SOT-23-6 ) Unit: mm • Features ● RDS(ON) ＜ 27mΩ (V GS = 4.5V) ● RDS(ON) ＜ 39mΩ (V GS = 2.5V) 6 5 ０．３ｍｉｎ ● N-Channel ：V DS=20V I D=5.9A 4 ● P-Channel： VDS =-20V ID=-4.2A


    Original     		PDF KDC6020C FDC6020C) OT-23-6

    irlml2502pbf

    Abstract: EIA-541
    Text: PD - 94892B IRLML2502PbF HEXFET Power MOSFET Ultra Low On-Resistance N-Channel MOSFET l SOT-23 Footprint l Low Profile <1.1mm l Available in Tape and Reel l Fast Switching l Lead-Free Description l l *  VDSS = 20V  ' RDS(on) = 0.045Ω 6  These N-Channel MOSFETs from International Rectifier


    Original     		PDF 94892B IRLML2502PbF OT-23 EIA-481 EIA-541. irlml2502pbf EIA-541

    8205 sot-23-6

    Abstract: Dual N-Channel MOSFET 8205 8205 A mosfet SSS8205 8205 dual mosfet 8205 mosfet 8205 sot 23-6 8205 A 8205 datasheet 8205
    Text: SSS8205 Dual N-Channel Enhancement Mode MOSFET Product Summary ID A RDS(ON) (m ) Max 05 YW 25 @VGS = 4.5V 5A 18V 82 VDS (V) TSOP-6 (SOT-23-6) 1 45 @VGS = 2.5V D1 (2, 5) D2 (2, 5) FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable.


    Original     		PDF SSS8205 OT-23-6) 8205 sot-23-6 Dual N-Channel MOSFET 8205 8205 A mosfet SSS8205 8205 dual mosfet 8205 mosfet 8205 sot 23-6 8205 A 8205 datasheet 8205

    marking 8206

    Abstract: RT 8206 sot-23-6 marking code "MARKING CODE G2" MARKING CODE G2
    Text: SSS8206 Dual N-Channel Enhancement Mode MOSFET Product Summary ID A RDS(ON) (m ) Max 06 YW 20 @VGS = 4.5V 5.5A 16V 82 VDS (V) TSOP-6 (SOT-23-6) 1 35 @VGS = 2.5V D1 (2, 5) D2 (2, 5) FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable.


    Original     		PDF SSS8206 OT-23-6) marking 8206 RT 8206 sot-23-6 marking code "MARKING CODE G2" MARKING CODE G2

    sot 23 mark 6C

    Abstract: marking code 6c
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET LRK7002WT1G Silicon N-Channel 3 zFeatures 1 1 Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive. 4) Easily designed drive circuits. 5) Easy to parallel. 6) Pb-Free package is available. 2 SOT-23 TO-236AB)


    Original     		PDF LRK7002WT1G OT-23 O-236AB) 3000/Tape LRK7002WT3G 10000/Tape 195mm 150mm sot 23 mark 6C marking code 6c

    Untitled

    Abstract: No abstract text available
    Text: SMD Type MOSFET Dual Enhancement Mode MOSFET APM2701CG • Features SOT-23-6 Unit: mm ● RDS(ON) ＜ 70mΩ (V GS = 4.5V) ● RDS(ON) ＜ 110mΩ (VGS = 2.5V) S1 D1 ０．３ｍｉｎ ● N-Channel ：V DS=20V I D=3A D2 ● P-Channel： VDS =-20V ID=-1.5A


    Original     		PDF APM2701CG OT-23-6

    M00X

    Abstract: APM2600C APM2600 STD-020C
    Text: APM2600C N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/6A, RDS ON =22mΩ(typ.) @ VGS=10V RDS(ON)=26mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOT-23-6 Lead Free Available (RoHS Compliant)


    Original     		PDF APM2600C OT-23-6 APM2600 APM2600 ANPEC-219° MIL-STD-883D-2003 883D-1005 JESD-22-B, 883D-1011 M00X APM2600C STD-020C

    marking code 67a sot23 6

    Abstract: mosfet 452 TSM3424 MARKING SO SOT26
    Text: TSM3424 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 30 Features ID (A) 30 @ VGS = 10V 6.7 42 @ VGS = 4.5V 5.7 Block Diagram ● Advance Trench Process Technology ●


    Original     		PDF TSM3424 OT-23 TSM3424CX6 OT-26 marking code 67a sot23 6 mosfet 452 TSM3424 MARKING SO SOT26

    IRLML2402

    Abstract: IRLML2502 IRLML2803 IRLML5103 IRLML5203 IRLML6401 IRLML6402 IRLML6401 SOT-23
    Text: PD - 96163 IRLML2502GPbF l l l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free Halogen-Free HEXFET Power MOSFET *  VDSS = 20V  ' RDS(on) = 0.045Ω 6  Description


    Original     		PDF IRLML2502GPbF OT-23 EIA-481 EIA-541. IRLML2402 IRLML2502 IRLML2803 IRLML5103 IRLML5203 IRLML6401 IRLML6402 IRLML6401 SOT-23

    Untitled

    Abstract: No abstract text available
    Text: PD - 96163 IRLML2502GPbF HEXFET Power MOSFET l l l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free Halogen-Free *  VDSS = 20V  ' RDS(on) = 0.045Ω 6  Description


    Original     		PDF IRLML2502GPbF OT-23 EIA-481 EIA-541.

    bsn20

    Abstract: BSN20 MARKING
    Text: BSN20 Vishay Semiconductors New Product formerly General Semiconductor N-Channel Enhancement-Mode MOSFET VDS 50V RDS ON 6Ω ID 180mA H C EN ET R T ENF TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View G .056 (1.43) .052 (1.33) 3 .016 (0.4) 0.079 (2.0)


    Original     		PDF BSN20 180mA O-236AB OT-23) OT-23 15-May-02 bsn20 BSN20 MARKING

    IRLML2502PbF

    Abstract: No abstract text available
    Text: PD - 94892C IRLML2502PbF HEXFET Power MOSFET l l l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free Halogen-Free *  VDSS = 20V  ' RDS(on) = 0.045Ω 6  Description


    Original     		PDF 94892C IRLML2502PbF OT-23 EIA-481 EIA-541. IRLML2502PbF

    sq2310es

    Abstract: SQ2310ES-T1-GE3
    Text: SQ2310ES Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.030 RDS(on) () at VGS = 2.5 V 0.034 RDS(on) () at VGS = 1.5 V 0.042 ID (A) 6 Configuration Single D TO-236 (SOT-23)


    Original     		PDF SQ2310ES O-236 OT-23) 2002/95/EC AEC-Q101 SQ2310ES* OT-23 SQ2310ES-T1-GE3 18-Jul-08 sq2310es SQ2310ES-T1-GE3

    SQ2310ES

    Abstract: No abstract text available
    Text: SQ2310ES Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.030 RDS(on) () at VGS = 2.5 V 0.034 RDS(on) () at VGS = 1.5 V 0.042 ID (A) 6 Configuration Single D TO-236 (SOT-23)


    Original     		PDF SQ2310ES O-236 OT-23) 2002/95/EC AEC-Q101 SQ2310ES* OT-23 SQ2310ES-T1-GE3 11-Mar-11 SQ2310ES

    Untitled

    Abstract: No abstract text available
    Text: BSS138 50V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@100mA=6Ω 0.006(0.15)MIN. • RDS(ON), [email protected],IDS@200mA=4Ω 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology


    Original     		PDF BSS138 OT-23 500mA 100mA 200mA 2002/95/EC 200mA 500mA 2010-REV

    Untitled

    Abstract: No abstract text available
    Text: Si2392ADS www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) MAX. ID (A) a 0.126 at VGS = 10 V 3.1 0.144 at VGS = 6 V 2.9 0.189 at VGS = 4.5 V 2.6 Qg (TYP.) 2.9 nC SOT-23 (TO-236) • TrenchFET power MOSFET


    Original     		PDF Si2392ADS OT-23 O-236) Si2392ADS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    t6661

    Abstract: ft960 marking 6Z SOT23 702 sot23 sot 23 70.2 sot-23 mosfet Marking SA s 6z sot223 marking marking 6Z 25 marking 6z sot
    Text: SMALL-SIGNAL TMOS MOSFETs continued CASE 318-07 (TO-236AB) SOT-23 STYLE 22 CASE 318E-04 (TO-261AA) SOT-223 STYLE 6 Table 18 — Surface Mount TMOS MOSFETs The follow ing is a listing of sm all-sig na l surface m ount T M O S MO SFETs. Case 318-07 — TO-236AB (SOT-23) — N-Channel


    OCR Scan     		PDF O-236AB) OT-23 318E-04 O-261AA) OT-223 O-236AB OT-23) MMBF170LT1 BSS123LT1 2N7002LT1 t6661 ft960 marking 6Z SOT23 702 sot23 sot 23 70.2 sot-23 mosfet Marking SA s 6z sot223 marking marking 6Z 25 marking 6z sot

    Untitled

    Abstract: No abstract text available
    Text: TAIW AN s TSM3454 SEMICONDUCTOR 30V N-Channel MOSFET bl RoHS CO M PLIANCE SOT-26 65 4 PRODUCT SUMMARY Pin Definition: 1. Drain 6. Drain 2. Drain 5. Drain 3. Gate 4. Source V ds {V 30 1 23 Features RDS on)(m£2) Id (A) 60 @ VGS= 10V 4.5 85 @ Vcs= 4.5V 3.6


    OCR Scan     		PDF TSM3454 OT-26 TSM3454CX6