marking 6c sot23
Abstract: BC817 6A SOT23 sot-23 marking code 352 6B SOT23 6C sot23 SOT-23 6C On semiconductor date Code sot-23 marking code 6c marking 6A SOT 23
Text: BC817-16LT1, BC817-25LT1, BC817-40LT1 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 V Collector −Base Voltage
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BC817-16LT1,
BC817-25LT1,
BC817-40LT1
marking 6c sot23
BC817
6A SOT23
sot-23 marking code 352
6B SOT23
6C sot23
SOT-23 6C
On semiconductor date Code sot-23
marking code 6c
marking 6A SOT 23
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Y1416
Abstract: vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363
Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to provide our customers with easy access to this information
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AND8004/D
14xxx
Y1416
vk sot-363
LCX00
AND8004
MC74HC04ADR2
ASE CHUNGLI
date code marking
"marking Code" V2
MX marking code sot23
marking a6 sot363
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AE sot-23
Abstract: SOT-23 6F PO diode marking sot-23 MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 M6H MARKING sot23
Text: MOTOROLA Order this document by MMBD352LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
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MMBD352LT1/D
MMBD352LT1
MMBD353LT1
MMBD354LT1
MMBD355LT1
236AB)
AE sot-23
SOT-23 6F
PO diode marking sot-23
MMBD352LT1
MMBD353LT1
MMBD354LT1
MMBD355LT1
M6H MARKING sot23
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BSS64LT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by BSS64LT1/D SEMICONDUCTOR TECHNICAL DATA Driver Transistor BSS64LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 80 Vdc Collector – Base Voltage
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BSS64LT1/D
BSS64LT1
BSS64LT1/D*
BSS64LT1
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MMBTH81LT1
Abstract: MMBTH81L 3D marking sot23 sot-23 Marking 3D 3D sot23 diodes
Text: MOTOROLA Order this document by MMBTH81LT1/D SEMICONDUCTOR TECHNICAL DATA UHF/VHF Transistor MMBTH81LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –20 Vdc
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MMBTH81LT1/D
MMBTH81LT1
236AB)
MMBTH81LT1/D*
MMBTH81LT1
MMBTH81L
3D marking sot23
sot-23 Marking 3D
3D sot23 diodes
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MMBFJ175LT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBFJ175LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit VDG 25 V VGS r – 25 V Symbol Max
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MMBFJ175LT1/D
MMBFJ175LT1
236AB)
MMBFJ175LT1/D*
MMBFJ175LT1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV609LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV609LT1 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configuration for minimum
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MMBV609LT1/D
MMBV609LT1
MMBV609LT1/D
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BC807
Abstract: BC807-16LT1 BC807-25LT1 BC807-40LT1
Text: MOTOROLA Order this document by BC807–16LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon COLLECTOR 3 BC807-16LT1 BC807-25LT1 BC807-40LT1 2 BASE 1 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit Collector – Emitter Voltage VCEO
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BC807
16LT1/D
BC807-16LT1
BC807-25LT1
BC807-40LT1
236AB)
BC807-16LT1/D*
BC807-16LT1
BC807-25LT1
BC807-40LT1
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MMBFJ175LT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBFJ175LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit VDG 25 V VGS r – 25 V Symbol Max
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MMBFJ175LT1/D
MMBFJ175LT1
236AB)
MMBFJ175LT1/D*
MMBFJ175LT1
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marking 8b sot-23
Abstract: MMBTH81LT1 sot-23 Marking 3D
Text: MOTOROLA Order this document by MMBTH81LT1/D SEMICONDUCTOR TECHNICAL DATA UHF/VHF Transistor MMBTH81LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –20 Vdc
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MMBTH81LT1/D
MMBTH81LT1
236AB)
MMBTH81LT1/D*
marking 8b sot-23
MMBTH81LT1
sot-23 Marking 3D
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1GM sot-23
Abstract: MMBTA05 MMBTA05LT1 MMBTA06 MMBTA06LT1
Text: MOTOROLA Order this document by MMBTA05LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTA05LT1 MMBTA06LT1* Driver Transistors NPN Silicon COLLECTOR 3 *Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol MMBTA05 MMBTA06 Unit Collector – Emitter Voltage
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MMBTA05LT1/D
MMBTA05LT1
MMBTA06LT1*
MMBTA05
MMBTA06
236AB)
MMBTA05LT1/D*
1GM sot-23
MMBTA05
MMBTA05LT1
MMBTA06
MMBTA06LT1
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BSS63LT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by BSS63LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor BSS63LT1 COLLECTOR 3 PNP Silicon 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –100 Vdc Collector – Emitter Voltage
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BSS63LT1/D
BSS63LT1
236AB)
BSS63LT1/D*
BSS63LT1
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BAS21LT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAS21LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Switching Diode BAS21LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Peak Forward Current
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BAS21LT1/D
BAS21LT1
236AB)
BAS21LT1/D*
BAS21LT1
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MMBTA55
Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1
Text: MOTOROLA Order this document by MMBTA55LT1/D SEMICONDUCTOR TECHNICAL DATA Driver Transistors MMBTA55LT1 MMBTA56LT1* COLLECTOR 3 PNP Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit VCEO VCBO –60 –80
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MMBTA55LT1/D
MMBTA55LT1
MMBTA56LT1*
MMBTA55
MMBTA56
236AB)
MMBTA56LT1
MMBTA55LT1/D*
MMBTA55
MMBTA55LT1
MMBTA56
MMBTA56LT1
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m3j diodes
Abstract: MMBTH69LT1 MMBTH69
Text: MOTOROLA Order this document by MMBTH69LT1/D SEMICONDUCTOR TECHNICAL DATA UHF/VHF Transistor MMBTH69LT1 COLLECTOR 3 PNP Silicon • Designed for UHF/VHF Amplifier Applications Motorola Preferred Device 1 BASE • High Current Gain Bandwidth Product fT = 2000 MHz Min @ 10 mA
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MMBTH69LT1/D
MMBTH69LT1
236AB)
MMBTH69LT1/D*
m3j diodes
MMBTH69LT1
MMBTH69
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BAV74LT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAV74LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV74LT1 ANODE 1 3 CATHODE 2 ANODE 3 1 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current IF 200 mAdc IFM(surge) 500
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BAV74LT1/D
BAV74LT1
236AB)
BAV74LT1
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BSV52LT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by BSV52LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Transistor BSV52LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage
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BSV52LT1/D
BSV52LT1
236AB)
BSV52LT1/D*
BSV52LT1
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1GM sot-23 transistor
Abstract: 1GM sot-23 MMBTA05 MMBTA05LT1 MMBTA06 MMBTA06LT1
Text: MOTOROLA Order this document by MMBTA05LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTA05LT1 MMBTA06LT1* Driver Transistors NPN Silicon COLLECTOR 3 *Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol MMBTA05 MMBTA06 Unit Collector – Emitter Voltage
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MMBTA05LT1/D
MMBTA05LT1
MMBTA06LT1*
MMBTA05
MMBTA06
236AB)
MMBTA05LT1/D*
1GM sot-23 transistor
1GM sot-23
MMBTA05
MMBTA05LT1
MMBTA06
MMBTA06LT1
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BCX17
Abstract: BCX17LT1 BCX18 BCX18LT1 BCX19LT1 BCX20LT1
Text: MOTOROLA Order this document by BCX17LT1/D SEMICONDUCTOR TECHNICAL DATA COLLECTOR 3 General Purpose Transistors 1 BASE 2 EMITTER COLLECTOR 3 1 BASE PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1 Voltage and current are negative for PNP transistors 2 EMITTER 3
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BCX17LT1/D
BCX17LT1
BCX18LT1
BCX19LT1
BCX20LT1
236AB)
BCX17
BCX17LT1
BCX18
BCX18LT1
BCX19LT1
BCX20LT1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV105GLT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV105GLT1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical
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MMBV105GLT1/D
MMBV105GLT1
236AB)
MMBV105GLT1/D
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MMBTA55
Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1 MMBTA55L
Text: MOTOROLA Order this document by MMBTA55LT1/D SEMICONDUCTOR TECHNICAL DATA Driver Transistors MMBTA55LT1 MMBTA56LT1* COLLECTOR 3 PNP Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit VCEO VCBO –60 –80
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MMBTA55LT1/D
MMBTA55LT1
MMBTA56LT1*
MMBTA55
MMBTA56
236AB)
MMBTA56LT1
MMBTA55LT1/D*
MMBTA55
MMBTA55LT1
MMBTA56
MMBTA56LT1
MMBTA55L
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BF681
Abstract: telefun* transistor pnp bf 681 marking code transistor fb transistor 6B transistor bc 470 telefunken C80 v 681 Telefunken power electronic transistor TRANSISTOR BC 950 sot-23 Marking DL
Text: TELEFUNKEN ELECTRONIC IMI electronic flic D • fl'iSDO'îb 000525Ô 0 BF 681 ~r - CreativeTechnologies Silicon PNP BF Transistor Applications: UHF/VHF oscillator and mixer stages Features: • High power gain • High reverse attenuation • Low noise figure
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T15/S54.
ft-11
569-GS
000s154
hal66
if-11
BF681
telefun* transistor pnp bf 681
marking code transistor fb
transistor 6B
transistor bc 470
telefunken C80
v 681 Telefunken
power electronic transistor
TRANSISTOR BC 950
sot-23 Marking DL
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BF960
Abstract: t187 BF-960 BF960 TELEFUNKEN GDDS530 Telefunken u 237 BF 22 W transistor bf 237 BF 606 a0lv
Text: oc TELEFUNKEN ELECTRONIC V fllC D 6 1 2 0 0 % DDDS530 *i • ALG6 T~3i - Xjr~ ■ miSPMMEN electronic BF 960 Creative Technologies j i N-Channel Dual Gate MOS-Fieldeffect Tetrode >Depletion Mode Applications: Input- and Mixerstages especially for UHFTV-tuners up to 900 MHz
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GDDS530
569-GS
000S154
HAL66
BF960
t187
BF-960
BF960 TELEFUNKEN
Telefunken u 237
BF 22 W
transistor bf 237
BF 606
a0lv
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BF960
Abstract: transistor ft 960
Text: TELEFUNKEN ELECTRONIC Ô1C D 0 1 2 0 0 % 000S530 T • ALG6 ■ r - 3 t TfEtLitFyKlKiKlelectronic ~ *-5 * BF 960 Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input- and Mixerstages especially for UHFTV-tuners up to 900 MHz
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000S530
569-GS
BF960
transistor ft 960
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