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    SOT-23 MARKING 352 Search Results

    SOT-23 MARKING 352 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 MARKING 352 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking 6c sot23

    Abstract: BC817 6A SOT23 sot-23 marking code 352 6B SOT23 6C sot23 SOT-23 6C On semiconductor date Code sot-23 marking code 6c marking 6A SOT 23
    Text: BC817-16LT1, BC817-25LT1, BC817-40LT1 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 V Collector −Base Voltage


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    PDF BC817-16LT1, BC817-25LT1, BC817-40LT1 marking 6c sot23 BC817 6A SOT23 sot-23 marking code 352 6B SOT23 6C sot23 SOT-23 6C On semiconductor date Code sot-23 marking code 6c marking 6A SOT 23

    Y1416

    Abstract: vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to provide our customers with easy access to this information


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    PDF AND8004/D 14xxx Y1416 vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363

    AE sot-23

    Abstract: SOT-23 6F PO diode marking sot-23 MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 M6H MARKING sot23
    Text: MOTOROLA Order this document by MMBD352LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


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    PDF MMBD352LT1/D MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 236AB) AE sot-23 SOT-23 6F PO diode marking sot-23 MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 M6H MARKING sot23

    BSS64LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BSS64LT1/D SEMICONDUCTOR TECHNICAL DATA Driver Transistor BSS64LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 80 Vdc Collector – Base Voltage


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    PDF BSS64LT1/D BSS64LT1 BSS64LT1/D* BSS64LT1

    MMBTH81LT1

    Abstract: MMBTH81L 3D marking sot23 sot-23 Marking 3D 3D sot23 diodes
    Text: MOTOROLA Order this document by MMBTH81LT1/D SEMICONDUCTOR TECHNICAL DATA UHF/VHF Transistor MMBTH81LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –20 Vdc


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    PDF MMBTH81LT1/D MMBTH81LT1 236AB) MMBTH81LT1/D* MMBTH81LT1 MMBTH81L 3D marking sot23 sot-23 Marking 3D 3D sot23 diodes

    MMBFJ175LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBFJ175LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit VDG 25 V VGS r – 25 V Symbol Max


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    PDF MMBFJ175LT1/D MMBFJ175LT1 236AB) MMBFJ175LT1/D* MMBFJ175LT1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBV609LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV609LT1 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configuration for minimum


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    PDF MMBV609LT1/D MMBV609LT1 MMBV609LT1/D

    BC807

    Abstract: BC807-16LT1 BC807-25LT1 BC807-40LT1
    Text: MOTOROLA Order this document by BC80716LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon COLLECTOR 3 BC807-16LT1 BC807-25LT1 BC807-40LT1 2 BASE 1 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit Collector – Emitter Voltage VCEO


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    PDF BC807 16LT1/D BC807-16LT1 BC807-25LT1 BC807-40LT1 236AB) BC807-16LT1/D* BC807-16LT1 BC807-25LT1 BC807-40LT1

    MMBFJ175LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBFJ175LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit VDG 25 V VGS r – 25 V Symbol Max


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    PDF MMBFJ175LT1/D MMBFJ175LT1 236AB) MMBFJ175LT1/D* MMBFJ175LT1

    marking 8b sot-23

    Abstract: MMBTH81LT1 sot-23 Marking 3D
    Text: MOTOROLA Order this document by MMBTH81LT1/D SEMICONDUCTOR TECHNICAL DATA UHF/VHF Transistor MMBTH81LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –20 Vdc


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    PDF MMBTH81LT1/D MMBTH81LT1 236AB) MMBTH81LT1/D* marking 8b sot-23 MMBTH81LT1 sot-23 Marking 3D

    1GM sot-23

    Abstract: MMBTA05 MMBTA05LT1 MMBTA06 MMBTA06LT1
    Text: MOTOROLA Order this document by MMBTA05LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTA05LT1 MMBTA06LT1* Driver Transistors NPN Silicon COLLECTOR 3 *Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol MMBTA05 MMBTA06 Unit Collector – Emitter Voltage


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    PDF MMBTA05LT1/D MMBTA05LT1 MMBTA06LT1* MMBTA05 MMBTA06 236AB) MMBTA05LT1/D* 1GM sot-23 MMBTA05 MMBTA05LT1 MMBTA06 MMBTA06LT1

    BSS63LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BSS63LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor BSS63LT1 COLLECTOR 3 PNP Silicon 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –100 Vdc Collector – Emitter Voltage


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    PDF BSS63LT1/D BSS63LT1 236AB) BSS63LT1/D* BSS63LT1

    BAS21LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BAS21LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Switching Diode BAS21LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Peak Forward Current


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    PDF BAS21LT1/D BAS21LT1 236AB) BAS21LT1/D* BAS21LT1

    MMBTA55

    Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1
    Text: MOTOROLA Order this document by MMBTA55LT1/D SEMICONDUCTOR TECHNICAL DATA Driver Transistors MMBTA55LT1 MMBTA56LT1* COLLECTOR 3 PNP Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit VCEO VCBO –60 –80


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    PDF MMBTA55LT1/D MMBTA55LT1 MMBTA56LT1* MMBTA55 MMBTA56 236AB) MMBTA56LT1 MMBTA55LT1/D* MMBTA55 MMBTA55LT1 MMBTA56 MMBTA56LT1

    m3j diodes

    Abstract: MMBTH69LT1 MMBTH69
    Text: MOTOROLA Order this document by MMBTH69LT1/D SEMICONDUCTOR TECHNICAL DATA UHF/VHF Transistor MMBTH69LT1 COLLECTOR 3 PNP Silicon • Designed for UHF/VHF Amplifier Applications Motorola Preferred Device 1 BASE • High Current Gain Bandwidth Product fT = 2000 MHz Min @ 10 mA


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    PDF MMBTH69LT1/D MMBTH69LT1 236AB) MMBTH69LT1/D* m3j diodes MMBTH69LT1 MMBTH69

    BAV74LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BAV74LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV74LT1 ANODE 1 3 CATHODE 2 ANODE 3 1 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current IF 200 mAdc IFM(surge) 500


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    PDF BAV74LT1/D BAV74LT1 236AB) BAV74LT1

    BSV52LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BSV52LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Transistor BSV52LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage


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    PDF BSV52LT1/D BSV52LT1 236AB) BSV52LT1/D* BSV52LT1

    1GM sot-23 transistor

    Abstract: 1GM sot-23 MMBTA05 MMBTA05LT1 MMBTA06 MMBTA06LT1
    Text: MOTOROLA Order this document by MMBTA05LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTA05LT1 MMBTA06LT1* Driver Transistors NPN Silicon COLLECTOR 3 *Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol MMBTA05 MMBTA06 Unit Collector – Emitter Voltage


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    PDF MMBTA05LT1/D MMBTA05LT1 MMBTA06LT1* MMBTA05 MMBTA06 236AB) MMBTA05LT1/D* 1GM sot-23 transistor 1GM sot-23 MMBTA05 MMBTA05LT1 MMBTA06 MMBTA06LT1

    BCX17

    Abstract: BCX17LT1 BCX18 BCX18LT1 BCX19LT1 BCX20LT1
    Text: MOTOROLA Order this document by BCX17LT1/D SEMICONDUCTOR TECHNICAL DATA COLLECTOR 3 General Purpose Transistors 1 BASE 2 EMITTER COLLECTOR 3 1 BASE PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1 Voltage and current are negative for PNP transistors 2 EMITTER 3


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    PDF BCX17LT1/D BCX17LT1 BCX18LT1 BCX19LT1 BCX20LT1 236AB) BCX17 BCX17LT1 BCX18 BCX18LT1 BCX19LT1 BCX20LT1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBV105GLT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV105GLT1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical


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    PDF MMBV105GLT1/D MMBV105GLT1 236AB) MMBV105GLT1/D

    MMBTA55

    Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1 MMBTA55L
    Text: MOTOROLA Order this document by MMBTA55LT1/D SEMICONDUCTOR TECHNICAL DATA Driver Transistors MMBTA55LT1 MMBTA56LT1* COLLECTOR 3 PNP Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit VCEO VCBO –60 –80


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    PDF MMBTA55LT1/D MMBTA55LT1 MMBTA56LT1* MMBTA55 MMBTA56 236AB) MMBTA56LT1 MMBTA55LT1/D* MMBTA55 MMBTA55LT1 MMBTA56 MMBTA56LT1 MMBTA55L

    BF681

    Abstract: telefun* transistor pnp bf 681 marking code transistor fb transistor 6B transistor bc 470 telefunken C80 v 681 Telefunken power electronic transistor TRANSISTOR BC 950 sot-23 Marking DL
    Text: TELEFUNKEN ELECTRONIC IMI electronic flic D • fl'iSDO'îb 000525Ô 0 BF 681 ~r - CreativeTechnologies Silicon PNP BF Transistor Applications: UHF/VHF oscillator and mixer stages Features: • High power gain • High reverse attenuation • Low noise figure


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    PDF T15/S54. ft-11 569-GS 000s154 hal66 if-11 BF681 telefun* transistor pnp bf 681 marking code transistor fb transistor 6B transistor bc 470 telefunken C80 v 681 Telefunken power electronic transistor TRANSISTOR BC 950 sot-23 Marking DL

    BF960

    Abstract: t187 BF-960 BF960 TELEFUNKEN GDDS530 Telefunken u 237 BF 22 W transistor bf 237 BF 606 a0lv
    Text: oc TELEFUNKEN ELECTRONIC V fllC D 6 1 2 0 0 % DDDS530 *i • ALG6 T~3i - Xjr~ ■ miSPMMEN electronic BF 960 Creative Technologies j i N-Channel Dual Gate MOS-Fieldeffect Tetrode >Depletion Mode Applications: Input- and Mixerstages especially for UHFTV-tuners up to 900 MHz


    OCR Scan
    PDF GDDS530 569-GS 000S154 HAL66 BF960 t187 BF-960 BF960 TELEFUNKEN Telefunken u 237 BF 22 W transistor bf 237 BF 606 a0lv

    BF960

    Abstract: transistor ft 960
    Text: TELEFUNKEN ELECTRONIC Ô1C D 0 1 2 0 0 % 000S530 T • ALG6 ■ r - 3 t TfEtLitFyKlKiKlelectronic ~ *-5 * BF 960 Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input- and Mixerstages especially for UHFTV-tuners up to 900 MHz


    OCR Scan
    PDF 000S530 569-GS BF960 transistor ft 960