4T SOT 23
Abstract: MMBD301 SOT23 JEDEC standard orientation
Text: DISCRETE POWER AND SIGNAL TECHNOLOGIES MMBD301 CONNECTION DIAGRAM 3 3 PACKAGE 4T SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GD Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted
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MMBD301
OT-23
O-236AB
O236AB
4T SOT 23
MMBD301
SOT23 JEDEC standard orientation
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MMBD701
Abstract: D0 sot23 A0 SOT23 FS PKG CODE 49
Text: MMBD701 CONNECTION DIAGRAM 3 3 PACKAGE 5HF SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GE Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature
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MMBD701
OT-23
O-236AB
O236AB
MMBD701
D0 sot23
A0 SOT23
FS PKG CODE 49
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SOT23 JEDEC standard orientation
Abstract: SOT-23 4TF MMBD301
Text: MMBD301 CONNECTION DIAGRAM 3 3 PACKAGE 4TF SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GD Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature
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MMBD301
OT-23
O-236AB
O236AB
SOT23 JEDEC standard orientation
SOT-23 4TF
MMBD301
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marking P2 sot-23
Abstract: wA MARKING SOT-23 SERIES DIODE 1403A MMBD1400 MMBD1401 MMBD1401A MMBD1403 MMBD1404 MMBD1405 1405A
Text: CONNECTION DIAGRAMS 3 3 1401 3 3 1403 29 3 1 2 SOT-23 SOT-23 2 NC 1 2 1 2 3 3 1404 1405 2 1 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 1 33 34 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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OT-23
MMBD1401
MMBD1404
MMBD1403
MMBD1405
marking P2 sot-23
wA MARKING SOT-23 SERIES DIODE
1403A
MMBD1400
MMBD1401A
MMBD1404
MMBD1405
1405A
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HQLT1 COLLECTOR 3 3 1 BASE 1 2 2 EMITTER SOT– 23 MAXIMUM RATINGS EACH DIODE Rating Collector-Emitter Voltage Symbol V CEO Collector-Base voltage Emitter-base Voltage Collector current-continuoun
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L8550HQLT1
OT-23
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sot-23 1Yd
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550*LT1 COLLECTOR 3 3 1 BASE 1 2 2 EMITTER SOT– 23 MAXIMUM RATINGS EACH DIODE Rating Collector-Emitter Voltage Symbol V CEO Collector-Base voltage Emitter-base Voltage Collector current-continuoun
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L8550
OT-23
sot-23 1Yd
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BAS35
Abstract: MMBD1401
Text: BAS35 BAS35 CONNECTION DIAGRAMS 3 3 3 29 2 SOT-23 1 2 1 2 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol W IV TA = 25°C unless otherwise noted Parameter Working Inverse Voltage
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BAS35
OT-23
MMBD1401
BAS35
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MMBD7000
Abstract: SOT23 JEDEC standard orientation pad size
Text: MMBD7000 MMBD7000 CONNECTION DIAGRAM 3 3 3 5C 2 SOT-23 1 2 1 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 70 V
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MMBD7000
OT-23
MMBD1201-1205
MMBD7000
SOT23 JEDEC standard orientation pad size
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Untitled
Abstract: No abstract text available
Text: BAS35 BAS35 Connection Diagrams 3 3 3 1405 29 2 SOT-23 1 1 2 2 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol W IV TA = 25°C unless otherwise noted Parameter Working Inverse Voltage
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BAS35
OT-23
MMBD1401
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BAS35
Abstract: MMBD1401
Text: BAS35 BAS35 Connection Diagrams 3 3 3 1405 L22 2 SOT-23 1 1 2 2 1 General Purpose High Voltage Diode Sourced from Process 1H. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol W IV TA = 25°C unless otherwise noted Parameter Working Inverse Voltage
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BAS35
OT-23
MMBD1401
BAS35
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fairchild sot-23 bav70
Abstract: sot-23 body marking A4 MARKING W2 SOT23 BAV70 ON marking code w2 sot23 fairchild s sot-23 Device Marking BAV70 BAV74 BAV99 sot-23 MARKING CODE A4
Text: BAV70 / BAV74 BAV70 / 74 3 CONNECTION DIAGRAMS A4 3 1 2 SOT-23 3 1 BAV70 2 MARKING A4 BAV74 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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BAV70
BAV74
OT-23
BAV70
BAV99
fairchild sot-23 bav70
sot-23 body marking A4
MARKING W2 SOT23
BAV70 ON
marking code w2 sot23
fairchild s sot-23 Device Marking
BAV74
sot-23 MARKING CODE A4
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1N4148 SOT-23
Abstract: 1N4148 discontinued 1N4148 MMBD914 1N4148 Sot23 PACKAGE
Text: MMBD914 MMBD914 CONNECTION DIAGRAM 3 3 3 5D 2 SOT-23 1 2 2 NC 1 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See 1N4148 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 75 V W IV
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MMBD914
OT-23
1N4148
1N4148 SOT-23
1N4148 discontinued
MMBD914
1N4148 Sot23 PACKAGE
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BAV99
Abstract: BAW56 Fairchild BAW56 SOT-23 bav99 code
Text: BAW56 BAW56 CONNECTION DIAGRAMS 3 3 3 A1 2 SOT-23 1 2 1 2 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage
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BAW56
OT-23
BAV99
BAW56
Fairchild BAW56
SOT-23 bav99 code
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BAS31
Abstract: BAV19
Text: BAS31 BAS31 CONNECTION DIAGRAM 3 3 3 L21 2 SOT-23 1 2 1 1 2 High Voltage General Purpose Diode Sourced from Process 1H. See BAV19 / 20 / 21 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage
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BAS31
OT-23
BAV19
BAS31
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BAV99
Abstract: ua725
Text: BAV99 BAV99 CONNECTION DIAGRAM 3 3 3 A7 2 SOT-23 1 2 1 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 70 V IF AV Average Rectified Current
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BAV99
OT-23
BAV99
ua725
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sot-23 marking code sf
Abstract: Marking ss SOT-23 BD1701 MMBD1701 MMBD1701A MMBD1703 MMBD1703A MMBD1704 MMBD1705 sot-23 Marking B1
Text: 3 CONNECTION DIAGRAMS 85 3 1 3 1701 2 2 NC 1 2 SOT-23 MMBD1701 MMBD1703 MMBD1704 MMBD1705 1 MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A 1 1 2 1703 2 3 3 1704 85A 87A 88A 89A 3 1 1705 2 High Conductance Low Leakage Diode Sourced from Process 1T.
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OT-23
MMBD1701
MMBD1703
MMBD1704
MMBD1705
MMBD1701A
MMBD1703A
MMBD1704A
MMBD1705A
sot-23 marking code sf
Marking ss SOT-23
BD1701
MMBD1701
MMBD1701A
MMBD1703
MMBD1703A
MMBD1704
MMBD1705
sot-23 Marking B1
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MMBD1503
Abstract: MMBD1501 MMBD1501A MMBD1503A MMBD1504 MMBD1505 MARKING 1L SOT-23 marking P2 sot-23 wA MARKING SOT-23 SERIES DIODE SOT23 MARKING CODE 720
Text: 3 CONNECTION DIAGRAMS 11 3 1 2 SOT-23 MMBD1501 MMBD1503 MMBD1504 MMBD1505 1 3 1501 2 MARKING 11 MMBD1501A 13 MMBD1503A 14 MMBD1504A 15 MMBD1505A 2 NC 1 A11 A13 A14 A15 1 2 3 3 1504 1503 3 1 2 1 1505 2 High Conductance Low Leakage Diode Sourced from Process 1L.
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OT-23
MMBD1501
MMBD1503
MMBD1504
MMBD1505
MMBD1501A
MMBD1503A
MMBD1504A
MMBD1505A
MMBD1503
MMBD1501
MMBD1501A
MMBD1503A
MMBD1504
MMBD1505
MARKING 1L SOT-23
marking P2 sot-23
wA MARKING SOT-23 SERIES DIODE
SOT23 MARKING CODE 720
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MARKING W2 SOT23
Abstract: diode 4148 sot-23 fairchild s sot-23 Device Marking Diode Marking 1p SOT-23 marking code w2 sot23 marking P2 sot-23 On semiconductor date Code sot-23 SOT23 DIODE marking CODE AV fairchild marking codes sot-23 4148SE
Text: 3 CONNECTION DIAGRAMS 5H 3 3 4148 2 NC 1 1 2 4148CC 2 SOT-23 MARKING MMBD4148 5H MMBD4148CA D6 MMBD4148CC D5 MMBD4148SE D4 1 3 1 2 3 3 1 2 4148SE 1 4148CA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings*
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4148CC
OT-23
MMBD4148
MMBD4148CA
MMBD4148CC
MMBD4148SE
4148SE
4148CA
MMBD1201-1205
MARKING W2 SOT23
diode 4148 sot-23
fairchild s sot-23 Device Marking
Diode Marking 1p SOT-23
marking code w2 sot23
marking P2 sot-23
On semiconductor date Code sot-23
SOT23 DIODE marking CODE AV
fairchild marking codes sot-23
4148SE
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power sot-23 Marking aa
Abstract: SOT23 component marking code KA MARKING W2 SOT23 L443 sot-23 MARKING bv BAT54A BAT54C BAT54S Schottky Diode Marking sot-23 marking P2 sot-23
Text: BAT54/A/C/S 3 CONNECTION DIAGRAMS PACKAGE BAT54 L4P SOT-23 TO-236AB Low 1 2 3 2 NC 1 MARKING BAT54 L4P BAT54C L43 BAT54A L42 BAT54S L44 3 BAT54C 2 1 3 3 2 1 BAT54A BAT54S 1 2 Schottky Barrier Diode Sourced from Process KA Absolute Maximum Ratings* Sym Tstg
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BAT54/A/C/S
BAT54
OT-23
O-236AB
BAT54
BAT54C
BAT54A
BAT54S
BAT54C
BAT54A
power sot-23 Marking aa
SOT23 component marking code KA
MARKING W2 SOT23
L443
sot-23 MARKING bv
Schottky Diode Marking sot-23
marking P2 sot-23
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marking P2 sot-23
Abstract: marking wa sot-23
Text: CONNECTION DIAGRAMS 3 3 3 1201 3 1203 24 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204 27 MMBD1203 26 MMBD1205 28 1 1 2 3 3 1204 1 1205 2 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MMBD1201
OT-23
MMBD1204
MMBD1203
MMBD1205
marking P2 sot-23
marking wa sot-23
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transistor 1201 1203 1205
Abstract: MMBD1201 MMBD1203 MMBD1204A MMBD1205A wA MARKING SOT-23 SERIES DIODE marking P2 sot-23 fairchild s sot-23 Device Marking
Text: CONNECTION DIAGRAMS 3 3 1201 3 1203 24 3 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 1 1 2 3 3 1204 1 2 1 1205 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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OT-23
MMBD1201
MMBD1204A
MMBD1203
MMBD1205A
transistor 1201 1203 1205
wA MARKING SOT-23 SERIES DIODE
marking P2 sot-23
fairchild s sot-23 Device Marking
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ON Semiconductor marking
Abstract: fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline
Text: DLD601/D Rev. 1, Mar-2001 One-Gate Logic One-Gate Logic ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does
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DLD601/D
Mar-2001
r14525
DLD601
ON Semiconductor marking
fairchild marking codes sot-23
W2D SOT23
diode w2d
SOT-353 MARKING L5
marking code vk, sot-363
va sot-353
1C SOT353
MC74VHC1G135
vsop8 package outline
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marking code t04 sot-23 transistor
Abstract: TRANSISTOR W2D Marking c9 SOT23-5 TOSHIBA SOT-23-6 marking code M2 marking a hA packages SC70-5 W2D SOT23 Diode SOT-23-6 marking L5 TESLA mh 7400 OneGate Marking AE sot23-5 torex marking code 252
Text: DLD601/D Rev. 2, Dec-2001 MiniGate Logic One-Gates, Two-Gates, Three-Gates and Analog Switches MiniGate™ Logic ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
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DLD601/D
Dec-2001
r14525
DLD601
marking code t04 sot-23 transistor
TRANSISTOR W2D
Marking c9 SOT23-5 TOSHIBA
SOT-23-6 marking code M2
marking a hA packages SC70-5
W2D SOT23
Diode SOT-23-6 marking L5
TESLA mh 7400
OneGate Marking AE sot23-5
torex marking code 252
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V = Device Code
Abstract: No abstract text available
Text: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC1G02
353/SC
V = Device Code
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