schottky diode marking A7
Abstract: diode ba 241 marking A7 diode schottky ba 662 diode ba 204 BAV70 ON MARKING 358 sot-23 Diode bav99 case MARKING A1 diode bav70
Text: BA- Series Features: • • • • Fast switching speed. Surface mount package ideally suited for automatic insertion. For general purpose switching applications. High conductance. SOT-23 Dimensions : Inches Millimetres BAW56 Marking: A1 BAV99 Marking: A7
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OT-23
BAW56
BAV99
BAV70
OT-23,
MIIL-STD-202,
BAW56:
BAV70:
BAV99:
BAW56/BAV70/BAV99
schottky diode marking A7
diode ba 241
marking A7 diode schottky
ba 662
diode ba 204
BAV70 ON
MARKING 358 sot-23
Diode bav99
case MARKING A1
diode bav70
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAW56WT1G z Pb-Free Package is Available. 3 DEVICE MARKING 1 LBAW56WT1G = A1 2 MAXIMUM RATINGS TA = 25°C CASE 419–04, STYLE 4 Rating Symbol Max Unit Reverse Voltag VR Forward Current Peak Forward Surge Current
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LBAW56WT1G
3000/Tape
LBAW56WT3G
10000/Tape
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SC70-5 MARKING CODE E.2
Abstract: marking tm sc70-5 UDFN6
Text: NL17SZ00 Single 2-Input NAND Gate The NL17SZ00 is a single 2−input NAND Gate in three tiny footprint packages. The device performs much as LCX multi−gate products in speed and drive. Features • • • • • • • • Tiny SOT−353, SOT−553 and SOT−953 Packages
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NL17SZ00
OT-353,
OT-553
OT-953
NC7SZ00P5X,
TC7SZ00FU
TC7SZ00AFE
OT-353/SC70-5/SC-88A
NL17SZ00/D
SC70-5 MARKING CODE E.2
marking tm sc70-5
UDFN6
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NCS2200-D
Abstract: MARKING ee SOT235 N Channel power MOSFET SOT-23-6 b1 marking sot-23-6 NCS2200 NCS2200A NCS2200SN1T1 NCS2200SN2T1 NCS2202 MOSFET N SOT-23-6
Text: NCS2200 Series, NCS2200A Low Voltage Comparators The NCS2200 Series is an industry first sub−one volt, low power comparator family. These devices consume only 10 mA of supply current. They are guaranteed to operate at a low voltage of 0.85 V which allows them to be used in systems that require less than 1.0 V
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NCS2200
NCS2200A
OT-23-5
OT-23-6
NCS2200/D
NCS2200-D
MARKING ee SOT235
N Channel power MOSFET SOT-23-6
b1 marking sot-23-6
NCS2200A
NCS2200SN1T1
NCS2200SN2T1
NCS2202
MOSFET N SOT-23-6
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UDFN6
Abstract: No abstract text available
Text: NL17SZ00 Single 2-Input NAND Gate The NL17SZ00 is a single 2−input NAND Gate in two tiny footprint packages. The device performs much as LCX multi−gate products in speed and drive. Features • • • • • • • • Tiny SOT−353 and SOT−553 Packages
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NL17SZ00
OT-353
OT-553
NC7SZ00P5X,
TC7SZ00FU
TC7SZ00AFE
OT-353/SC70-5/SC-88A
NL17SZ00/D
UDFN6
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LBC817-40WT1G 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 45 V Collector–Base Voltage
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LBC817-40WT1G
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Untitled
Abstract: No abstract text available
Text: NCS2200, NCS2200A, NCV2200 Low Voltage Comparators The NCS2200 Series is an industry first sub−one volt, low power comparator family. These devices consume only 10 mA of supply current. They are guaranteed to operate at a low voltage of 0.85 V which allows them to be used in systems that require less than 1.0 V
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NCS2200,
NCS2200A,
NCV2200
NCS2200
OT-23-5
NCS2200/D
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SOT-23 Marking code MU
Abstract: NCS2200 NCS2200A NCS2200SN1T1 NCS2200SN2T1 NCS2200SQ2T2 NCS2202 NCS2202SN1T1
Text: NCS2200 Series, NCS2200A Low Voltage Comparators The NCS2200 Series is an industry first sub−one volt, low power comparator family. These devices consume only 10 mA of supply current. They are guaranteed to operate at a low voltage of 0.85 V which allows them to be used in systems that require less than 1.0 V
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NCS2200
NCS2200A
OT-23-5
NCS2200/D
SOT-23 Marking code MU
NCS2200A
NCS2200SN1T1
NCS2200SN2T1
NCS2200SQ2T2
NCS2202
NCS2202SN1T1
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Untitled
Abstract: No abstract text available
Text: NCS2200, NCS2200A, NCV2200, NCS2202A Low Voltage Comparators The NCS2200 Series is an industry first sub−one volt, low power comparator family. These devices consume only 10 mA of supply current. They are guaranteed to operate at a low voltage of 0.85 V
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NCS2200,
NCS2200A,
NCV2200,
NCS2202A
NCS2200
NCS2200/D
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistors NPN Silicon LMBT2222AWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which 3 COLLECTOR is designed for low power surface mount
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LMBT2222AWT1G
323/SCâ
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Untitled
Abstract: No abstract text available
Text: NCS2200, NCS2200A, NCV2200 Low Voltage Comparators The NCS2200 Series is an industry first sub−one volt, low power comparator family. These devices consume only 10 mA of supply current. They are guaranteed to operate at a low voltage of 0.85 V which allows them to be used in systems that require less than 1.0 V
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NCS2200,
NCS2200A,
NCV2200
NCS2200
OT-23-5
NCS2200/D
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Untitled
Abstract: No abstract text available
Text: NCS2200, NCS2200A, NCV2200 Low Voltage Comparators The NCS2200 Series is an industry first sub−one volt, low power comparator family. These devices consume only 10 mA of supply current. They are guaranteed to operate at a low voltage of 0.85 V which allows them to be used in systems that require less than 1.0 V
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NCS2200,
NCS2200A,
NCV2200
NCS2200
OT-23-5
NCS2200/D
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Serise Switching Diodes LBAV99WT1G LBAV99RWT1G Features • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish The LBAV99WT1 is a smaller package, equivalent to the LBAV99LT1. Suggested Applications
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LBAV99WT1G
LBAV99RWT1G
LBAV99WT1
LBAV99LT1.
LBAV99WT1
OT-323
SC-70)
LBAV99RWT1
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sq2t2
Abstract: NCS2200SN2T1G NCS2202SQ1T2G marking code R3 SOT353 NCS2200SQ L2 SOT-23-5
Text: NCS2200, NCS2200A, NCV2200 Low Voltage Comparators The NCS2200 Series is an industry first sub−one volt, low power comparator family. These devices consume only 10 mA of supply current. They are guaranteed to operate at a low voltage of 0.85 V which allows them to be used in systems that require less than 1.0 V
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NCS2200,
NCS2200A,
NCV2200
NCS2200
OT-23-5
NCS2200/D
sq2t2
NCS2200SN2T1G
NCS2202SQ1T2G
marking code R3 SOT353
NCS2200SQ
L2 SOT-23-5
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20HT1G z Pb-Free Package is Available. 1 z Device Marking: JR 1 CATHODE 2 ANODE 2 SOD– 323 MARKING DIAGRAM Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR
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LBAS20HT1G
3000/Tape
LBAS20HT3G
10000/Tape
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SOT-353 MARKING 8v
Abstract: diode SM 88A MOSFET SC-59 power gs 069 SC-75 sot marking a1 353 marking 118 sot-323 marking 25 SOD-323 6C t marking code sot 23
Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mA, 60 V L2N7002WT1G N–Channel SOT–323 • 3 We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ
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L2N7002WT1G
SC-70)
C330mm
360mm
SOT-353 MARKING 8v
diode SM 88A
MOSFET SC-59 power
gs 069
SC-75
sot marking a1 353
marking 118 sot-323
marking 25 SOD-323
6C t marking code sot 23
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SC-88A footprint
Abstract: BAS19LT1G JX SOT23 SOT23 Marking JX sot-23 Marking do hM sot-353 marking 04 sot-23 marking 25 SOT-23 ref marking cd sc-88a BAS19LT3G
Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Features • Pb−Free Packages are Available HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Rating Symbol Continuous Reverse Voltage BAS19 BAS20 BAS21 Repetitive Peak Reverse Voltage
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BAS19LT1,
BAS20LT1,
BAS21LT1,
BAS21DW5T1
BAS19
BAS20
BAS21
SC-88A footprint
BAS19LT1G
JX SOT23
SOT23 Marking JX
sot-23 Marking do
hM sot-353
marking 04 sot-23
marking 25 SOT-23 ref
marking cd sc-88a
BAS19LT3G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5111T1G SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network PNP SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor
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LMUN5111T1G
70/SOTâ
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marking R1E SC-70
Abstract: SOT-23-5 R1A marking code r1e sot23 sot-23-5 525 marking marking R1F NCP4671DSN06T1G marking R1E marking C3 sot23-5 say marking code sot 23 SOT 23 r1a
Text: NCP4671 400 mA, Dual Rail Ultra Low Dropout Linear Regulator The NCP4671 is a CMOS Dual Supply Rail Linear Regulator designed to provide very low output voltages. The Dual Rail architecture which separates the power for the LDO control circuitry provided via the Vbias pin from the main power path (Vin) offers
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NCP4671
NCP4671
SC-70,
SC-70
NCP4671/D
marking R1E SC-70
SOT-23-5 R1A
marking code r1e sot23
sot-23-5 525 marking
marking R1F
NCP4671DSN06T1G
marking R1E
marking C3 sot23-5
say marking code sot 23
SOT 23 r1a
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BAS19LT1G
Abstract: BAS21LT1 BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 BAS21 BAS21DW5T1 On semiconductor date Code sot-23
Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Features http://onsemi.com • Pb−Free Packages are Available HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Rating Symbol Continuous Reverse Voltage BAS19 BAS20 BAS21
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BAS19LT1,
BAS20LT1,
BAS21LT1,
BAS21DW5T1
BAS19
BAS20
BAS21
BAS19LT1G
BAS21LT1
BAS19
BAS19LT1
BAS19LT3
BAS20
BAS20LT1
BAS21
BAS21DW5T1
On semiconductor date Code sot-23
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BF550R
Abstract: BF550 marking A1 TRANSISTOR marking LA
Text: BF550/BF550R Silicon PNP HF Transistor Applications RF-IF amplifier specially for thick and thin film circuits. Features D High power gain D Low noise figure 1 2 1 3 3 94 9280 BF550 Marking: LA Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527
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BF550/BF550R
BF550
BF550R
D-74025
15-Apr-96
marking A1 TRANSISTOR
marking LA
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s869t
Abstract: S869TR CASESOT-23 marking A1 TRANSISTOR Telefunken
Text: S869T/S869TR Silicon PNP Planar RF Transistor Applications Self-oscillating ultrahigh frequency mixer stages Features D High blocking voltages D Transition frequency: fT = 1 GHz 1 2 1 3 3 94 9280 S869T Marking: 869 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter
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S869T/S869TR
S869T
S869TR
D-74025
24-Apr-96
CASESOT-23
marking A1 TRANSISTOR
Telefunken
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marking GG
Abstract: BF579 BF579R Low Noise uhf transistor marking A1 TRANSISTOR
Text: BF579/BF579R Silicon PNP Planar HF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low disortation 1 2 1 3 3 94 9280 BF579 Marking: G7 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter
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BF579/BF579R
BF579
BF579R
D-74025
15-Apr-96
marking GG
Low Noise uhf transistor
marking A1 TRANSISTOR
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a7s diode
Abstract: bav99w diode marking 355
Text: SIEMENS BAV 99W Silicon Switching Diode Array • Connected in series • For high speed switching applications TT Type Marking Ordering Code BAV 99W A7s IF Pin Configuration Q62702-A1051 1=A1 2=A2 Package 3=C1/C2 SOT-323 Maximum Ratings per Diode Parameter
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OCR Scan
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PDF
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Q62702-A1051
OT-323
40mmm
a7s diode
bav99w
diode marking 355
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