SSL0804T-4R7
Abstract: ssl 110 sn
Text: YAGEO CORPORATION SMD INDUCTOR / BEADS SMD Power Inductors SSL0618 Series For SSL series provide excellent current carrying capabilities in a small footprint. They have a flat top for reliable pick and place operations and features robust temperature deflection. In addition
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SSL0618
08Amps
SSL1306,
680uH
470uH
680uH
150uH
SSL0804T-4R7
ssl 110 sn
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Untitled
Abstract: No abstract text available
Text: AO4720 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET The AO4720 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side
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AO4720
AO4720
Figure10:
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Untitled
Abstract: No abstract text available
Text: AON7700 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AON7700 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is suitable for use in SMPS and general purpose applications. Standard Product
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AON7700
AON7700
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AO4714
Abstract: No abstract text available
Text: AO4714 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AO4714 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AO4714
AO4714
Figure10:
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AO4720
Abstract: SRFE
Text: AO4720 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET The AO4720 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side
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AO4720
AO4720
Figure10:
SRFE
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AO4714
Abstract: No abstract text available
Text: AO4714 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AO4714 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AO4714
AO4714
Figure10:
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Untitled
Abstract: No abstract text available
Text: AO4716 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AO4716 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is
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AO4716
AO4716
Figure10:
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Untitled
Abstract: No abstract text available
Text: AO4718 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET The AO4718 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS ON ,and low gate charge. This device is suitable for use as a low side FET in
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AO4718
AO4718
Figure10:
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AO4722
Abstract: No abstract text available
Text: AO4722 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET The AO4722 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in
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AO4722
AO4722
Figure10:
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Untitled
Abstract: No abstract text available
Text: AO4714 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AO4714 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AO4714
AO4714
Figure10:
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Untitled
Abstract: No abstract text available
Text: AON7702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AON7702 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is suitable for use in SMPS and general purpose applications. Standard Product
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AON7702
AON7702
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Untitled
Abstract: No abstract text available
Text: AON7704 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AON7704 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is suitable for use in general purpose applications. Standard Product AON7704 is
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AON7704
AON7704
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SL1016
Abstract: SONY CHOKE SL06 472K sl0608 SL0609 B 80 SL0406 d2-3339
Text: Leaded Choke Coils – SL Series SL Series Features � Low cost � Wide range of inductance � High reliability Product Identification Electrical Parameters Material D2 Tolerance (J:± 5 %.K:±10%.M:±20%) Item Inductance T:UL tube C:Clear coating core HT
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SL0406
SL1016
SL1016
SONY CHOKE
SL06
472K
sl0608
SL0609
B 80
SL0406
d2-3339
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AO4724
Abstract: No abstract text available
Text: AO4724 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM The AO4724 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in
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AO4724
AO4724
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SSL0503HC-1R2
Abstract: No abstract text available
Text: YAGEO CORPORATION SMD INDUCTOR / BEADS SMD Power Inductors SSL0503HC Series These series have been specially designed for high current, low voltage DC-DC converter applications. This simple, rugged design provides current ratings normally available only in much larger packages
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SSL0503HC
16Arms
SSL0804HC
step-d000
SSL1306HC,
SSL0503HC-1R2
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24v 5a smps
Abstract: AO4716
Text: AO4716 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AO4716 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is
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AO4716
AO4716
00A/us
24v 5a smps
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AON6712
Abstract: No abstract text available
Text: AON6712 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AON6712 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product
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AON6712
AON6712
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Untitled
Abstract: No abstract text available
Text: AON3702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AON3702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AON3702
AON3702is
AON3702L
00A/us
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Untitled
Abstract: No abstract text available
Text: AOD492 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOD492 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,
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AOD492
AOD492
O-252
Figure15:
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STM-0028
Abstract: tDa 8221 DIODE marking 7BA TDA6120Q SOT110 DBS13P SS-00259 TDA6120 PEAK tray drawing sot193
Text: SONY M nu$=t * 1. Type No. / Manufacturer’s Name TDA6120 2. Structure Series / / }& PHILIPS SEMICONDUCTORS ifii MIXED BIP / 3. Use —1 DMOS Function ffliÉ • W M 30MHz / 125Vpp Video Output Amplifier 4. Package / Materials DBS 13P / Plastic 4.1 Dimensions
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TDA6120
30MHz
125Vpp
SS-00259-t.
J2N81
STM-0028
tDa 8221
DIODE marking 7BA
TDA6120Q
SOT110
DBS13P
SS-00259
PEAK tray drawing
sot193
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ITT shg 1 diode
Abstract: ITT Diode SHG 2 ITT shg 1.5 diode ICX098BQ ITT SHG 1,5 sony kv sony ICX098BQ ICX098BQ-F
Text: SONY ICX098BQ &fÄ4.5mm 1/4SÜ 7 fritti; Jjÿ il IC X098BQ fä, M M 4.5mm ( l / 4 S I ) VGA*ÎJft<£>IE > M c c D [ H f « i» :f-'eto «t I9 , f à l / 3 0 & " C £ X < D 1 & z.ktfñtí%Tto ttz, \z* •i - ? i; $ e L T 7 ;i/ 7 i / - A < ^ l# ib ïl£ # à £ t ^ T r è î i " 0
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ICX098BQ
ICX098BQfi,
1/41D
27MHz
J00343C82
ITT shg 1 diode
ITT Diode SHG 2
ITT shg 1.5 diode
ICX098BQ
ITT SHG 1,5
sony kv
sony ICX098BQ
ICX098BQ-F
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ICX229AL
Abstract: BFM 17A CXD1267 ICX209AL LTCM500S
Text: SONY ICX229 A L f i , ICX229AL CCIR1j ^ D ÔH t itzj ? a y m c c o m m t i f ä r n ^ t « pdb ICX209 A L K 2 Í U * 5 7 # 1É £ ; f c i] K [ p J ± L , Tñ £ |IM L T V ' I t o ' i fc, Super HAD CCD m ^ x io m ïÈ M , hT'^ & H i* /ïy V -V y * ^ L í 1"o
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ICX229AL
ICX229ALÃ
ICX209AL
-100dB
ICX209AL
ICX209ALj
-100mm
J00330A3Z
ICX229AL
BFM 17A
CXD1267
LTCM500S
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ICX227AL
Abstract: LTCM500S sony ilx CCD S HJ62
Text: SONY ICX227AL ICX227ALÜ, C C Ï R j î ^ C O É l t í f t A ^ 7 hZM L f z 'O ÿ ÿ 't y w .c c D m m m m ^ 'to ICX207ALHM L , #14 è ttz, #£<£ ç ® *, K « nnn K Iß] ± L , tñ Super HAD CCD n m u in ^ - z m Ä L x ^ ito jg a j if L t ö v , m fâ w é ftiïv
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ICX227AL
ICX227AL
ICX207ALCML,
105dB
ICX207ALjtO
5dBMlCX207ALjt;
100mm
LTCM500S
sony ilx
CCD S
HJ62
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CXA1951AQ
Abstract: 331J04 16MHZ
Text: SONY C X A 1 9 5 1 A Q G P S £ ^ > = l> A —£ CXA1951AQÍÍ, X W i m W i i t, / h m * v >r ~ V T & * ,& W }fàG P SizM L f a c e t o t ixm * H il L H GPS3 L X .< D fâ M & & X l2ï f r £ t o Y - Ï i V Y ' i > H lO Q ä B & ± .$ : f ä i % L X \ / '£ t a
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CXA1951AQ
CXA1951AQfi,
J96743C33
40PIN
42/COPPER
CXA1951AQ
331J04
16MHZ
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