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    Abstract: No abstract text available
    Text: SNN2515D N-Channel Enhancement Mode MOSFET Features • VDSS = 150V, ID = 25A  Low drain-source On resistance: RDS on = 55mΩ (Typ.) @ VGS = 10V, ID = 12A RDS(on) = 60mΩ (Typ.) @ VGS = 5V, ID = 10A  High power and current handing capability  Lead Free and Green devices available (RoHS Compliant)


    Original     		PDF SNN2515D O-252 SNN2515 05-JUN-13 KSD-T6O044-000